沉积在α-Al２Ｏ3分形基底上Ag薄膜的特性

报道了采用磁控溅射法在α－Ａｌ_２Ｏ₃分形基底上沉积Ａｇ薄膜表面的形貌、结晶状态以及其Ｖ－Ｉ特性．结果表明：分形的Ａｌ_２Ｏ₃基底导致Ａｇ薄膜具有起伏不平的结构、较差的结晶状态并且存在大量的孔洞，它们同样受基底温度和薄膜厚度的影响．在一定的厚度范围内，Ａｇ薄膜呈现反常的非线性Ｉ（Ｖ）特性，其行为也受薄膜厚度、基底温度和测试环境的强烈影响． 关键词：     

La0.33Pr0.34Ca0.33MnO3薄膜的应变效应

采用脉冲激光沉积法分别在(100)LaAlO₃和(100)SrTiO₃基片上生长了La_0.33Pr_0.34Ca_0.33MnO₃薄膜,并通过磁测量和电输运测量对生长在不同基片上的La_0.33Pr_0.34Ca_0.33MnO₃薄膜的物性进行了研究.结果表明,基片和薄膜之间的压应力导致La_{关键词： 钙钛矿锰氧化物 相分离 电荷有序}     

La0.5Sr0.5CoO3薄膜的外延生长及其机理研究

利用脉冲激光制膜法,在多种衬底和温度条件下,系统研究了La_0.5Sr_0.5CoO₃(LSCO)薄膜的结构和外延生长特性,在LaAlO₃,SrTiO₃和MgO衬底上实现了LSCO薄膜的外延生长.外延生长的薄膜具有低的电阻率和金属性导电特征.研究表明,外延生长的最佳温度范围为700—800℃,最佳衬底为LaAlO₃.并着重探讨了衬底材料和淀积温度等多种因素对LSCO薄膜的生长与性 关键词：     

反应溅射法制备TiO2薄膜

报道了用反应溅射法制备TiO₂薄膜的实验研究.详细研究了氧分压、基底温度和退火温度对成膜结构的影响.制备出了具有金红石和锐钛矿晶体结构的TiO₂薄膜.分析了金红石和锐钛矿晶体的形成条件,并对薄膜的表面形貌进行了测量. 关键词： 反应溅射 2薄膜')" href="#">TiO₂薄膜     

2-2型磁电复合薄膜CoFe2O4/Pb(Zr0.53Ti0.47)O3静磁耦合

运用溶胶-凝胶法在Pt/Ti/SiO₂/Si基片上旋涂制备了2-2型CoFe₂O₄/Pb(Zr_0.53Ti_0.47)O₃磁电复合薄膜．制备的磁电薄膜结构为基片/PZT/CFO/PZT*/CFO/PZT,通过改变中间层PZT*溶胶的浓度,改变磁性层间距以及静磁耦合的大小．SEM结果表明,复合薄膜结构致密,呈现出界面清晰平整的多层结构．制备的复合薄膜具有较好的铁电与铁磁性能．实验还研究了静磁耦合对薄膜磁电性能的影响,结果表明,随着复合薄膜磁性层间距的减小,静磁耦合效应的增加,磁电电压系数有逐渐增大的趋势.     

Effects of the substrate temperature on the properties of CuIn5S8 thin films

Structural, optical and electrical properties of CuIn₅S₈ thin films grown by thermal evaporation have been studied relating the effects of substrate heating conditions of these properties. The CuIn₅S₈ thin films were carried out at substrate temperatures in the temperature range 100-300 °C. The effects of heated substrate on their physico-chemical properties were investigated using X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX), optical transmission and hot probe method. X-ray diffraction revealed that the films are strong preferred orientation along the (3 1 1) plane upon substrate temperature 200 °C and amorphous for the substrate temperatures below 200 °C. No secondary phases are observed for all the films. The composition is greatly affected by heated substrate. From the optical transmission and reflection, an important absorption coefficient exceeds 10⁵ cm⁻¹ at 800 nm was found. As increasing the substrate temperature, the optical energy band gap decreases from 1.70 eV for the unheated films to 1.25 eV for the deposited films at 300 °C. It was found that CuIn₅S₈ thin film is an n-type semiconductor at 250° C.     

SUPERCONDUCTING PROPERTIES AND STRUCTURAL PERFECTION OF EPITAXIAL YBa2Cu3O7-x THIN FILMS

High quality epitaxial YBa₂Cu₃O_7-x thin films have been succcessfully prepared by dc magnetron sputtering deposition, on (100) and (110) aligned SrTiO₃, LaAlO₃ and yttria-stabilized zirconia (YSZ) substrates. The films showed zero resistance around 90 K and had a J_c (at 77 K, H=0) over 10⁶A/cm². It was found that superconducting properties and structures of the films were strongly dependent on oxygen pressure and substrate temperature. The epitaxial structure of the films have been studied by X-ray diffraction. Rutherford backscattering and channeling spectroscopy, X-ray double-crystal diffraction and transmission election microscopy. The experimental results demonstrated that the epitaxial YBa₂Cu₃O_7-x films had excellent superconducting properties and quite perfect structure.     

化学溶液法制备的Pb(Mg1/3Nb2/3)O3-PbTiO3薄膜的光学性能

用化学溶液方法在宝石衬底及有LaNiO₃缓冲层的Pt/TiO₂/SiO₂/Si衬底上制备了92%Pb(Mg_1/3Nb_2/3)O₃-8%PbTiO₃(PMNT)薄膜，X射线衍射测试结果表明：在有LaNiO₃缓冲层的Pt/TiO₂/SiO₂/Si衬底上制备的PMNT薄膜几乎是纯钙钛矿相，且薄膜 关键词： PMNT薄膜 光学性能 化学溶液法     

Band gap variation in co-evaporated AgInSe2 thin films with 1.26 MeV He+ ion irradiation

Polycrystalline AgInSe₂ thin films have been prepared by co-evaporation of individual elements on glass substrate at a high temperature. The samples were subjected to the irradiation of 1.26 MeV helium ions (He⁺). Structural properties were investigated by X-ray diffraction and optical studies have been carried out from transmittance and reflectance measurements. The effect of irradiation on the structural and optical properties has been investigated for different doses of He⁺ ions. It is observed that the band gap of silver indium selenide thin films decreases gradually from 1.25 eV to 1.07 eV with irradiation dose.     

金属有机化学气相沉积法制备钛酸铅铁电薄膜

利用低压ＭＯＣＶＤ工艺分别在（００１）取向的ＬａＡｌＯ_３，ＳｒＴｉＯ_３和重掺杂硅单晶衬底上制备ＰｂＴｉＯ_３铁电薄膜，并通过Ｘ射线衍射谱对薄膜的微结构进行分析．Ｘ射线θ－２θ扫描显示硅衬底上得到了ＰｂＴｉＯ_３多晶薄膜，另两种衬底上得到了择优取向的ＰｂＴｉＯ_３薄膜．ＬａＡｌＯ_３衬底上的ＰｂＴｉＯ_３薄膜有ａ和ｃ两个取向，也就是薄膜中存在着９０°畴结构，而生长在ＳｒＴｉＯ_３衬底上的ＰｂＴｉＯ_３薄膜中只存在ｃ方向的择优取向．由于薄膜的尺度效应，发现ｃ轴晶格常数与块材相比均缩短．Ｘ射线的φ扫描验证了后两类薄膜的外延特性，利用同步辐射的高强度和高能量分辨率用摇摆曲线方法研究了这两种外延薄膜的品质，进一步证明了ＳｒＴｉＯ_３衬底上的ＰｂＴｉＯ_３薄膜的单畴特性．利用重掺杂的硅衬底作底电极，测量显示直接生长于硅衬底上的ＰｂＴｉＯ_３多晶薄膜具有良好的铁电性能 关键词：     

La0.8Ca0.2MnO3/SrTiO3薄膜厚度对其结构及磁学性能的影响

采用多种X射线衍射技术和磁电阻测量技术研究了不同厚度的La_0.8Ca_0.2MnO₃/SrTiO₃ (LCMO/STO)薄膜的应变状态及其对磁电阻性能的影响.结果表明，在STO(001)单晶衬底上生长的LCMO薄膜沿［00l］取向生长.LCMO薄膜具有伪立方钙钛矿结构，随着薄膜厚度的增加，面内晶格参数增加，垂直于面内的晶格参数减小,晶格参数a和b相近，略小于c.LC 关键词： X射线衍射 微结构 应变 物理性能     

The ferroelectric and ferromagnetic characterization of CoFe2O4/Pb(Mg1/3Nb2/3)O3-PbTiO3 multilayered thin films

The multiferroic (PMN-PT/CFO)_n (n = 1,2) multilayered thin films have been prepared on SiO₂/Si(1 0 0) substrate with LNO as buffer layer via a rf magnetron sputtering method. The structure and surface morphology of multilayered thin films were determined by X-ray diffraction (XRD) and atom force microscopy (AFM), respectively. The smooth, dense and crack-free surface shows the excellent crystal quality with root-mean-square (RMS) roughness only 2.9 nm, and average grain size of CFO thin films on the surface is about 44 nm. The influence of the thin films thickness size, periodicity n and crystallite orientation on their properties including ferroelectric, ferromagnetic properties in the (PMN-PT/CFO)_n multilayered thin films were investigated. For multilayered thin films with n = 1 and n = 2, the remanent polarization Pr are 17.9 μC/cm² and 9.9 μC/cm²; the coercivity H_c are 1044 Oe and 660 Oe, respectively. In addition, the relative mechanism are also discussed.     

EFFECT OF ZnFe22O4 DOPING ON THE OPTICAL PROPERTIES OF TiO2 THIN FILMS

Amorphous TiO₂ thin films and ZnFe₂O₄ doped TiO₂ composite films were deposited by radio frequency magnetron sputtering. The effect of ZnFe₂O₄ doping on the optical properties of TiO₂ thin films was reported. Our results show that the absorption edge of TiO₂ thin films and composite films exhibits a blue shift with decreasing annealing temperature. The absorption edge of composite films has moved to visible spectrum range, and a very large red shift occurs in comparison with TiO₂ thin film. An enhanced photoluminescence in ZnFe₂O₄ doped anatase TiO₂ thin film at room temperature.     

Multilayer Bi1.5Zn1.0Nb1.5O7/Ba0.6Sr0.4TiO3/Bi1.5Zn1.0Nb1.5O7 thin films for tunable microwave applications

Bi_1.5Zn_1.0Nb_1.5O₇/Ba_0.6Sr_0.4TiO₃/Bi_1.5Zn_1.0Nb_1.5O₇ tunable multilayer thin film has been fabricated by pulsed laser ablation and characterized. Phase composition and microstructure of multilayer films were characterized by X-ray diffraction, scanning electron microscopy (SEM) and atomic force microscopy (AFM). The film has very smooth surface with RMS roughness of 1.5-2 nm and grain size of 100-150 nm. Total film thickness has been measure to be 375 nm. The BZN thin films at 300 K, on Pt(1 1 1)/SiO₂/Si substrate showed zero-field dielectric constant of 105 and dielectric loss tangent of 0.002 at frequency of 0.1 MHz. Thin films annealed at 700 °C shows the dielectric tunability of 18% with biasing field 500 kV/cm at 0.1 MHz. The multilayer thin film shows nonferroelectric behavior at room temperature. The good physical and electrical properties of multilayer thin films make them promising candidate for tunable microwave device applications.     

Influence of substrate temperature on structures and dielectric properties of pyrochlore Bi1.5Zn1.0Nb1.5O7 thin films prepared by pulsed laser deposition

The influence of substrate temperature on structural and dielectric properties of cubic pyrochlore Bi_1.5Zn_1.0Nb_1.5O₇ (BZN) thin films prepared by pulsed laser deposition process has been investigated. BZN thin films were deposited on Pt/Ti/SiO₂/Si(1 0 0) substrate and in situ annealed at 700 °C. The results indicate that the substrate temperature has a significant effect on the structural and dielectric properties of BZN thin films. The films exhibit a cubic pyrochlore structure in the substrate temperature range from 550 °C to 700 °C and at the annealing temperature of 700 °C. With further increase of substrate temperature to 750 °C, the phases of Bi₂O₃, BiNbO₄ and Bi₅Nb₃O₁₅ can be detected in the XRD pattern due to the Zn loss. The dielectric constant and loss tangent of the films deposited at 650 °C are 192 and 6 × 10⁻⁴ at 10 kHz, respectively. The tunability is 10% at a dc bias field of 0.9 MV/cm.     

InP/SiO2纳米复合膜的微观结构和光学性质

应用射频磁控共溅射方法在石英玻璃和抛光硅片上制备了InP/SiO₂复合薄膜,并在几种条件下对这些薄膜进行退火.X射线光电子能谱和卢瑟福背散射实验结果表明,复合薄膜中InP和SiO₂的化学组分都大体上符合化学计量配比.X射线衍射和激光喇曼谱实验结果都证实了复合薄膜中形成了InP纳米晶粒.磷气氛保护下的高温(520℃)退火可以消除复合薄膜中残存的In和In₂O₃并得到了纯InP/SiO₂纳米复合薄膜.实验观察到了室温下纳米复合薄膜的明显的光学吸收边蓝移现象和光学非线性的极大增强 关键词： InP 纳米晶粒 微观结构 光学性质     

Effect of complexing agent on the properties of electrochemically deposited Cu2ZnSnS4 (CZTS) thin films

The Cu₂ZnSnS₄ (CZTS) thin films have been electrochemically deposited on Mo-coated glass substrate from weak acidic medium (pH 4.5-5) at room temperature. The effect of complexing agent (tri-sodium citrate) on the structural, morphological and compositional properties of CZTS thin films has been investigated. The as-deposited and annealed thin films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM),EDAX and X-ray photoelectron spectroscopy (XPS) techniques for their structural, morphological, compositional and chemical properties, respectively. XRD studies reveal that the amorphous nature of as-deposited thin film changes into polycrystalline with kesterite crystal structure after annealing in Ar atmosphere. The film prepared without complexing agent showed well-covered surface morphology on the substrate with some cracks on the surface of the film whereas those prepared using complexing agent, exhibited uneven and slightly porous and some overgrown particles on the surface of the films. After annealing, morphology changes into the flat grains, uniformly distributed over the entire surface of the substrate. The EDAX and XPS study reveals that the films deposited using 0.2 M tri-sodium citrate are nearly stoichiometric.     

X射线三晶衍射研究YBa2Cu3Oy超导薄膜

应用X射线三晶衍射对LaAlO₃衬底上生长的YBa₂Cu₃O_y薄膜中的应力水平、存在的主要缺陷,以及薄膜与衬底的失配和取向关系等进行了研究。结果表明,薄膜在衬底上几乎完全松弛,应力很小,薄膜存在较严重的晶格取向差缺陷,这是影响薄膜晶体结构完整性的主要因素。此外,衬底与薄膜在垂直于表面和平行于表面方向都存在取向差。 关键词：     

GROWTH MODE OF Cu-RICH PARTICLES ON LASER-ABLATED YBa2Cu3O7 THIN FILMS

The microstructure of the laser-ablated YBa₂Cu₃O₇ (YBCO) thin film deposited on heated (100) SrTiO₃ substrate was examined by transmission electron microscope. The par-ticles on the film mainly consist of CuO and few CuYO₂. Most of these non-superconducting particles nucleate on or near the surface of the film and protrude about 100-400 nm in height, A large amount of a-axis YBCO grains also exist in the film, which nucleate at the substrate surface and grow perpendicularly above the c-axis YBCO film. The YBCO thin film deposited under low oxygen pressure has very different microstructure compared with YBCO thin film deposited under high oxygen pressure.     

Infrared optical properties of Ba(Zr0.20Ti0.80)O3 and Ba(Zr0.30Ti0.70)O3 thin films prepared by sol-gel method

Ba(Zr_xTi_1−x)O₃ (BZT) (x = 0.20 and 0.30) thin films are deposited on Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrate by sol-gel method. X-ray diffraction patterns show that the thin films have a good crystallinity. Optical properties of the films in the wavelength range of 2.5-12 μm are studied by infrared spectroscopic ellipsometry (IRSE). The optical constants of the BZT thin films are determined by fitting the IRSE data using a classical dispersion formula. As the wavelength increases, the refractive index decreases, while the extinction coefficients increase. The effective static ionic charges are derived, which are smaller than that in a purely ionic material for the BZT thin films.