绽放的奥秘

植物的花头开始时一般是闭合的结构.随着生长过程的继续,其上应力分布变得严重地不均匀,并在其后的形貌演化过程（包括开裂和种子的散播）中,起着关键的作用.图中所示为利用Ag和SiO2此一无机材料体系获得的花头-花茎结构.Ag     

球面上皱褶花样的演化

文章从理论和实验两方面研究了通过控制柔性衬底的曲率来调控球面上应力诱导之皱褶花样的可行性.研究以Ag内核/SiO2壳层微结构为对象.结果表明,当球形衬底的曲率较小且应力刚超过临界值时,皱褶花样为三角铺排的凹痕结构;而当应力进一步增大和/或衬底的半径增大时,则出现迷宫形的花样.皱褶的周期长度和临界屈曲应力都随衬底半径的增大而增大.此方向上的研究对于理解大自然中许多花样(比如花叶序与皱纹)的产生和演化具有重要的意义.     

GaSb单晶空间生长

空间的微重力给晶体生长提供了一个消除自然对流、由纯扩散控制的生长环境,为提高晶体质量创造了条件,引起晶体生长研究人员的关注.中国科学院物理研究所和日本东京大学电子工程系合作,1992年在中国第14颗返回式卫星上成功地生长了一根φ6 mm×30 mm外形完整的GaSb单晶.对空间生长的晶体的研究显示：晶体在空间生长部分无Ⅰ类生长条纹,表明晶体生长时既无自然对流也没有Marangoni对流.位错密度测定表明,晶体在空间生长期间熔体未与坩埚器壁接触时生长的晶体位错密度接近于零,而熔体与坩埚器壁接触后位错密度迅速增高.详细叙述了该晶体的生长和研究,分析了微重力对晶体生长的影响,并对空间晶体生长的发展提出看法.     

高分辨X射线衍射研究杂质对晶体结构完整性的影响

用水溶液生长晶体的方法生长出了不同掺杂的Sr(NO₃)₂晶体.用电子探针研究了杂质在晶体中的分布情况.结果表明,杂质在晶体中存在扇形分凝,其中Ba在{100}扇形区的含量大于{111}扇形区,而Pb的分凝情况相反,在{111}扇形区的含量大于{100}扇形区.用高分辨X射线衍射摇摆曲线技术研究了纯的、掺Ba的和掺Pb的Sr(NO₃)₂晶体的完整性情况,并用X射线衍射动力学理论计算了完整Sr(NO₃ 关键词： 高分辨X射线衍射 杂质 水溶液晶体生长     

Influence of Ba^2＋ and Pb^2＋ Ions on the Raman Dominating Active Vibronic Mode in Strontium Nitrate Crystals

The compositions of Sr(NO3)2 crystals grown from an aqueous solution doped with Ba^2 and Pb^2 were characterized by the electron probe microanalysis technique.It was found that Ba^2 is enriched in {100} sectors and Pb^2 in {111} sectors.The Raman spectra of different parts of these crystals at room temperature in the ranges of 1038-1070cm^-1 and 650-1150cm^-1 were investigated.The results indicated that barium and lead shift the Raman dominating peaks to the lower frequency and broaden the full width at half maximum.Furthermore,barium probably degrades the properties of the Sr(NO3)2 Raman shifter while lead is anticipated to improve it.     

A DOUBLE-TEMPERATURE-GRADIENT TECHNIQUE FOR THE GROWTH OF PURE C60 SINGLE CRYSTALS FROM THE VAPOR PHASE

Pure C₆₀ single crystals were grown by a sublimation-condensation method in an evacuated dosed quartz tube situated in a double-temperature-gradient furnace. Large C₆₀ single crystals, up to a size of 0.6 mm×1.0 mm×2.0 mm with quite smooth and shiny faces, were obtained. X-ray diffraction, electron diffraction and X-ray morphology were carried out and showed that the quality of large C₆₀ single crystals grown by the double-temperature-gradient technique is excellent. In this paper the experimental results of the growth of large C₆₀ single crystals are reported and the morphological and structural characterizations are discussed in detail.     

X射线三晶衍射研究YBa2Cu3Oy超导薄膜

应用X射线三晶衍射对LaAlO₃衬底上生长的YBa₂Cu₃O_y薄膜中的应力水平、存在的主要缺陷,以及薄膜与衬底的失配和取向关系等进行了研究。结果表明,薄膜在衬底上几乎完全松弛,应力很小,薄膜存在较严重的晶格取向差缺陷,这是影响薄膜晶体结构完整性的主要因素。此外,衬底与薄膜在垂直于表面和平行于表面方向都存在取向差。 关键词：     

Thermal stability and electrical properties of copper nitride with In or Ti

Thin films of ternary compounds CuxInyN and CuxTiyN were grown by magnetron sputtering to improve the thermal stability of Cu3N,a material that decomposes below 300℃,and thus promises many interesting applications in directwriting.The effect of In or Ti incorporation in altering the structure and physical properties of copper nitride was evaluated by characterizing the film structure,surface morphology,and temperature dependence of electrical resistivity.More Ti than In can be accommodated by copper nitride without completely deteriorating the Cu3N lattice.A small amount of In or Ti can improve the crystallinity,and consequently the surface morphology.While the decomposition temperature is rarely influenced by In,the Ti-doped sample,Cu59.31Ti2.64N38.05,shows an X-ray diffraction pattern dominated by characteristic Cu3N peaks,even after annealing at 500℃.Both In and Ti reduce the bandgap of the original Cu3N phase,resulting in a smaller electrical resistivity at room temperature.The samples with more Ti content manifest metal-semiconductor transition when cooled from room temperature down to 50 K.These results can be useful in improving the applicability of copper-nitride-based thin films.     

Sterilization of mycete attached on the unearthed silk fabrics by an atmospheric pressure plasma jet

The sterilization of the simulated unearthed silk fabrics using an atmospheric pressure plasma jet(APPJ) system employing Ar/O_2 or He/O_2 plasma to inactivate the mycete attached on the silk fabrics is reported. The effects of the APPJ characteristics(particularly the gas type and discharge power) on the fabric strength, physical-chemical structures,and sterilizing efficiency were investigated. Experimental results showed that the Ar/O_2 APPJ plasma can inactivate the mycete completely within 4.0 min under a discharge power of 50.0 W. Such an APPJ treatment had negligible impact on the mechanical strength of the fabric and the surface chemical characteristics. Moreover, the Ar ions, O and OH radicals were shown to play important roles on the sterilization of the mycete attached on the unearthed silk fabrics.     

组分调制Cu3NPdx的大温区恒定电阻率

单一固体材料的电阻率是关于温度的复杂函数。目前尚未见关于相当大的温度范围内恒定电阻率的报道；对恒电阻的需求仍然是通过材料结构组合或电路设计实现的。Cu3NPdx随组份的变化会经历半导体-半金属相变，在Cu3NPd0.238中可以在240K的温度范围内测得不变的电阻率，这一发现至少表明大温区内恒电阻是可以在单一材料内实现的，它对固体物理的理解本身以及诸多应用都有重要的意义。