SUPERCONDUCTING PROPERTIES AND STRUCTURAL PERFECTION OF EPITAXIAL YBa2Cu3O7-x THIN FILMS

The photoconductivity spectra of semimagnetic semiconductor Cd_0.7Mn_0.3Se have been measured at 50-300 K and in the wavelength range of 5500? to 8000?. It is found that the energy gap of Cd_0.7Mn_0.3Se changes with the temperature linearly, and the temperature coefficient (dE_g/dT) is about -7×10^-4 eV/K. A photoconductivity peak which is related to Mn²⁺ is also found. This peak is located around 1.85 eV, nearly unshifted with variation of the temperature. The possible transition mechanisms in Cd_1-xMn_xSe have been discussed in the light of group theory and crystal field theory, and the results are in good agreement with experiments.     

SUPERCONDUCTING PROPERTIES AND STRUCTURAL PERFECTION OF EPITAXIAL YBa2Cu3O7-x THIN FILMS

High quality epitaxial YBa₂Cu₃O_7-x thin films have been succcessfully prepared by dc magnetron sputtering deposition, on (100) and (110) aligned SrTiO₃, LaAlO₃ and yttria-stabilized zirconia (YSZ) substrates. The films showed zero resistance around 90 K and had a J_c (at 77 K, H=0) over 10⁶A/cm². It was found that superconducting properties and structures of the films were strongly dependent on oxygen pressure and substrate temperature. The epitaxial structure of the films have been studied by X-ray diffraction. Rutherford backscattering and channeling spectroscopy, X-ray double-crystal diffraction and transmission election microscopy. The experimental results demonstrated that the epitaxial YBa₂Cu₃O_7-x films had excellent superconducting properties and quite perfect structure.     

用俄歇电子能谱分析Y-Ba-Cu-O超导薄膜与衬底的界面互作用

高T_c的Y-Ba-Cu-O超导材料在弱电方面进入实用的一个重要条件,就是需要制备出优质的超导薄膜。已有多种制备超导薄膜的方法见报道。用蓝宝石或Si衬底制备超导薄膜,通常会由于薄膜与衬底强烈的界面反应使其零电阻温度大为降低,严重时甚至变成非超导。而我们在实验中发现,YSZ(掺钇稳定立方氧化锆)衬底在高温下与薄膜的界面反应也较为严重。在YSZ衬底上沉积一层Ag缓冲层则可以减轻薄膜与村底的相互作用。     

高TcYBCO超导薄膜微带延迟线研制

本报导了延时为２．２ｎｓ的ＴＣ超导薄膜延迟线的制作工艺。应用直流磁控溅射在１０×１０ｍｍ＾２ＬａＡｌＯ３衬底上均匀地外延生长４５０ｎｍ优质ＹＢＣＯ超导薄膜，采用离子束干法刻蚀技术制作出宽为１６６μｍ长为１７４ｍｍ的曲折线图形，配以合适的气密性封装，经美国ＨＰ８５０７矢量网络分析仪测量，在温度７８Ｋ频率１．２ＧＨｚ时，延迟线的插入损耗低达０．０４ｄＢ，仅为相同条件下铜膜延一插损的１／１６０。     

用MOCVD法在YSZ衬底上制备YBCO膜

用低压ＭＯＣＶＤ多源法在单晶ＹＳＺ和具有双轴取向ＩＢＡＤＹＳＺ的金属基带上沉积了ＹＢＣＯ膜,它们的Ｊｃ（７７．３Ｋ,０Ｔ）分别为～２×１０６Ａ／ｃｍ２和～７×１０４Ａ／ｃｍ２．分析了本试验中的Ｊｃ差别原因．在单晶ＹＳＺ上ＹＢＣＯ高Ｊｃ数值显示了用ＭＯＣＶＤ制备涂层膜导体的潜力     

反应离子束微细加工全息闪耀光栅研究

本文报道以无透镜傅里叶全息术变换记录的全息光栅作掩膜,应用反应离子束入射角控制光栅闪耀角,选择了合适刻蚀工艺参数,制得衍射效率为67%的SiO_2全息闪耀光栅。     

Ar离子注入YBa2Cu3O7-x超导薄膜中微结构变化的透射电子显微镜研究

Ar离子注入YBa₂Cu₃O_7-x超导薄膜后,不仅会引起样品超导转变温度T_c和临界电流密度J_c的下降,还会使样品的正常态由金属型变为半导体型。透射电子显微镜观察发现在小剂量(<5×10¹²Ar/cm²)注入情况下,样品的晶格结构几乎不受影响。随着注入剂量的增加,晶格损伤越来越严重,最终变成非晶态。对实验结果的分析表明,Ar离子注入引起YBa_{2< 关键词：}     

低能离子轰击后铌酸锂晶体表面层的性质

从实验中观察到,低能离子轰击后的铌酸锂晶体表面层在3500—6500?之间出现至少两个光吸收峰,表面的相对暗电导率增加两个数量级。这表明离子轰击后的铌酸锂中产生了附加的光吸收和电导激活中心。在离子轰击过程中,由于某些原子基团和原子的优先溅射,在表面层中造成相当大的化学计量比偏离,它直接影响晶体的光学和电学性质。XPS(X射线电子能谱)测试结果证实,这一表面层的构成符合铌酸锂缺陷结构的空位模型。讨论了附加激活中心的成因,并据此解释了Ar⁺/O⁺混合离子轰击铌酸锂晶体所得到的结果。 关键词：     

半熔融烧结靶直流磁控溅射外延生长YBCO超导薄膜

直流磁控溅射使用半熔融大直径平面烧结靶,在(100)SrTiO_3衬底上原位生长 YBa_2Cu_3·O_(7-δ)超导薄膜,可以很方便地和重复地获得临界电流密度高(J_c=3.4×10~6A/cm~2在77KB=0时)、微波表面电阻 R_s 较低(在77K,50.9GHz 时,R_s≤37mΩ)和均匀区较大的超导薄膜.X 光衍射,X 光双晶衍射摇摆曲线测量和透射电子显微镜分析结果表明,所得的 YBCO 薄膜为高度 c 取向的单晶外延膜.