Real-time and label-free detection of biomolecular interactions by oblique-incidence reflectivity difference method

We successfully conduct the label-free and real-time detection of the interactions between epoxy groups and rabbit IgG and 5' CTT CAG GTC ATG AGC CTG AT 3' oligonucleotide, and between the hybridization of 5' CTT CAG GTC ATG AGC CTG AT 3' and its complementary 3' GAA GTC CAG TAC TCG GAC TA 5' oligonucleotide, by the oblique-incidence reflectivity difference (OI-RD) method. The dynamic curves of OI-RD signals, corresponding to the kinetic processes of biomolecular combination or hybridization, are acquired. In our case, the combination of epoxy groups with rabbit IgG and 5' CTT CAG GTC ATG AGC CTG AT 3' oligonucleotide need almost one and a half hours and about two hundred seconds, respectively; and the hybridization of the two oligonucleotides needs about five hundred seconds. The experimental results show that the OI-RD is a promising method for the real-time and label-free detection of biomolecular interactions.     

在GaAs-Al矩形光栅界面上表面增强二次谐波产生

我们以GaAs-Al矩形光栅界面为例具体推导了二次谐波产生的公式.依据Bloembergen和Pershan关于非线性介质的理论,用微扰论方法求解了麦克斯韦方程.理论公式和数值计算均表明,表面增强二次谐波起源于共振激励表面电磁波.     

Co:BaTiO3纳米复合薄膜的制备及其结构

用脉冲激光沉积技术(PLD)在MgO(100)基底上生长了嵌埋Co纳米晶的BaTiO3复合薄膜. 分别利用x射线衍射(XRD)、原子力显微镜(AFM)以及拉曼光谱(Raman)对薄膜的微观结构、表面 形貌进行了表征. 结果表明该薄膜为c轴取向的四方晶体结构，薄膜表面均匀、致密、 具有原子尺度的光滑性，其均方根表面粗糙度(RMS)达到015nmCo以纳米晶形式嵌埋BaTi O3基体中，呈单分散性均匀分布，其粒径随激光脉冲数的增加而增大. Co：BaTiO3纳米 复合薄膜拉曼峰的强度随钴纳米晶粒径的增加明显减弱，但是峰的宽度逐渐增加. 关键词： Co：BaTiO3 纳米复合薄膜 脉冲激光沉积     

Formation of Interfacial Layers in LaAlO3/Silicon during Film Deposition

We have studied the interracial reactions between amorphous LaAlO3 thin films and Si substrates, using high- resolution transmission electron microscopy and x-ray photoelectron spectroscopy. It has been shown that the interracial layer between LaAlO3 film and Si substrate chemical states show that the ratio of La 4d3/2 to Al 2p is SiLaxAlyOz. The depth distributions of La, Si and Al of the interfacial layer remains unchanged with the depth compared to that of the LaAlO3 film. Moreover, the Si content, in the interracial layer gradually decreases with increasing thickness of the interracial layer. These results strongly suggest that the Al element is not deficient in the interracial layer, as previously believed, and the formation of a SiLaxAlyOz interracial layer is mainly due to the diffusion of Si from the substrate during the LaAlO3 film deposition. With the understanding of the interracial layer formation, ones can control the interface characteristics to ensure the desired performances of devices using high-k oxides as gate dielectrics.     

Pico-second photoelectric characteristic in manganite oxide La0.67Ca0.33MnO3 films

Ultrafast photoelectric characteristic has been observed in La_0.67Ca_0.33MnO₃ films on tilted SrTiO₃ substrates. A pico-second (ps) open-circuit photovoltage of the perovskite manganese oxide films has been obtained when the films were irradiated by a 1.064μm laser pulse of 25 ps duration. The rise time and full width at half-maximum of the photovoltage pulse are ～300 ps and ～700 ps, respectively. The photovoltaic sensitivity was as large as ～500 mV/mJ.     

金属Fe薄膜的PLD制备及其非线性光学性质研究

采用脉冲激光沉积（PLD）技术在MgO基片上制备了金属Fe薄膜.利用原子力显微镜研究了不同制备温度对薄膜表面形貌的影响.x射线衍射分析表明沉积温度大于500℃时，Fe薄膜在MgO基片上有很好的结晶性，并有单一取向.通过z扫描方法测量了超薄Fe膜的光学非线性，得到了Fe薄膜的非线性折射率n₂＝709×10^-5cm²/ kW，非线性吸收系数 β＝-552×10^-3cm/W. 关键词： Fe薄膜 非线性 脉冲激光沉积     

MgB2超导薄膜的微波测量

报道了利用蓝宝石介质谐振器技术测量MgB2超导薄膜的微波表面电阻Rs、OK时的穿透深度λ(O)和超导能隙△(O)．λ(O)和△(O)的值是通过先测量样品穿透深度λ(T)的变化量△λ(T)，然后由BCS理论模型拟合△λ（T)的实验数据得到的．测试样品是利用化学气相沉积技术在MgO(111)基片上制备的c轴织构的MgB2超导薄膜，薄膜的超导转变温度和转变宽度分别为38K和0．1K．微波测试结果表明在10K，18GHz下MgB2薄膜的Rs约为100μΩ，可以和高质量的YBCO薄膜的Rs值相比拟；BCS理论拟合得到的MgB2超导薄膜的λ(0)=102nm，△(0)：1．13kTc．     

La1-xPrxMnO3(x=0.1,0.2)薄膜庞磁电阻性质的研究

一种新的庞磁电阻氧化物薄膜La1-xPrxMnO3(x=0.1,0.2)薄膜用脉冲激光沉积(PLD)方法生长在(100)SrTiO3单晶基底上.XRD结果显示薄膜具有很好的外延单晶取向.电输运和磁性质的研究表明薄膜具有显著的庞磁电阻效应(CMR)效应,其中磁电阻比率达95%(在5T的磁场下).X射线光电子能谱(XPS)的结果表明薄膜体系中Pr离子的价态为+4价,因此该薄膜很可能是电子掺杂的庞磁电阻体系.     

利用电泳技术在不锈钢和铁基底上制备MgB2带材

本文首次报道了利用电泳技术在铁和不锈钢基底上制备MgB2超导带材.电阻测量表明,沉积在铁和不锈钢基底上MgB2带材的超导零电阻转变温度分别为37.5K和31K,超导转变宽度分别为0.3K和1K.磁测量表明,(5K,OT)时不锈钢基底上带材的临界电流密度为6×105(A/cm2).X射线衍射谱和扫描电子显微镜图象表明样品结晶良好,晶粒生长致密.本工艺制备MgB2带材时不受系统真空度的限制,生长迅速,成本低廉,并且可以根据不同的需要任意选择基底的形状和大小.     

Superconductivity and x—ray photoemission study of MgB2 thin films

Highly c-axis oriented MgB2 thin films with Tc^onset of 39.6K were fabricated by magnesium diffusing into pulsedlaser-deposited boron precursors.The estimation of critical current density Jc,using hysteresis loops and the Bean model,has given the value of 10^7A/cm^2(15K,0T),which is one of the highest values ever reported.The x-ray photoemission study of the MgB2 thin films has revealed that the binding energies of Mg 2p and B 1s are at 49.4eV and 186.9eV,which are close to those of metallic Mg and transition-metal diborides,respectively.