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1.
尚杰  张辉  曹明刚  张鹏翔 《物理学报》2011,60(1):16802-016802
采用脉冲激光沉积(PLD)技术,经一系列的优化实验成功地制备了BaTiO3(BT)和Ba0.6Sr0.4TiO3(BST)单层膜.X射线衍射分析表明,在LaAlO3(001)单晶平衬底上生长的BT和BST薄膜都是沿[001]取向的近外延生长.且随着氧压在10-3—25 Pa范围内逐渐增大,BST薄膜的晶格常数与氧压之间近似满足Boltzmann函数关系.其次,在此优化条件下还 关键词: 超晶格 晶格常数 激光感生热电电压 脉冲激光沉积  相似文献   

2.
邱云飞  杜文汉  王兵 《物理学报》2011,60(3):36801-036801
本文工作利用脉冲激光沉积术(PLD)和超高真空扫描隧道显微术(UHV-STM),研究了在Sr/Si(001)-(2×1)衬底表面上真空室温沉积几个单层SrTiO3薄膜的初始生长过程.经660 ℃退火处理后,Sr/Si衬底表面上形成了纳米岛状结构.经分析,这些纳米小岛为C49-TiSi2和 C54-TiSi2.实验结果表明,在没有氧气的情况下退火,Sr/Si界面无法有效阻止SrTiO3薄膜与Si衬底之间的相互作用. 关键词: 脉冲激光沉积术(PLD) 扫描隧道显微镜(STM) 3')" href="#">SrTiO3 2')" href="#">C54-TiSi2  相似文献   

3.
刘婷  谈松林  张辉  秦毅  张鹏翔 《物理学报》2008,57(7):4424-4427
采用脉冲激光沉积技术制备了SrTiO3和SrNb0.2Ti0.8O3薄膜.X射线衍射分析表明在LaAlO3(100)单晶平衬底上生长的SrTiO3及SrNb0.2Ti0.8O3薄膜是沿[001]取向的近外延生长.随着氧压在一定范围内逐渐增大,SrTiO3薄膜的晶格参数减小,而SrNb0.2Ti0.8O3薄膜的晶格参数先减小后增大.同时摸索出制备具有二维电子气超晶格(SrTiO3/SrNb0.2Ti0.8O3)L的最佳氧压为1.0×10-2Pa.另外在LaAlO3(100)倾斜衬底上制备的SrNb0.2Ti0.8O3薄膜中观察到激光感生热电电压效应. 关键词: 0.2Ti0.8O3薄膜')" href="#">SrNb0.2Ti0.8O3薄膜 晶格参数 激光感生热电电压 脉冲激光沉积  相似文献   

4.
朱杰  张辉  张鹏翔  谢康  胡俊涛 《物理学报》2010,59(9):6417-6422
采用脉冲激光沉积(PLD)技术在LaSrAlTaO3(LSATO),LaAlO3(LAO)和SrTiO3(STO)的单晶倾斜衬底上成功制备了Pb(Zr0.3Ti0.7)O3(PZT)薄膜,在三种倾斜衬底上生长的PZT薄膜中都首次发现了LIV效应.对PZT/LSATO薄膜在a,c轴两种不同取向择优生长下的LIV效应做了研究,发现在薄膜c轴取向择优生长 关键词: 激光感生电压效应 铁电薄膜 薄膜生长取向 原子层热电堆  相似文献   

5.
张强  王建元  罗炳成  邢辉  金克新  陈长乐 《物理学报》2016,65(10):107301-107301
采用脉冲激光沉积法在SrTiO3:0.7%Nb(100)单晶衬底上生长了La1.3Sr1.7Mn2O7(LSMO)薄膜, 并 研究了LSMO/SrTiO3-Nb异质结的输运性质和光伏效应. 研究发现, 异质结具有良好的整流特征和明显的光生伏特效应. 在532 nm激光辐照下, 光生电压随温度升高先增大后减小, 并且在150 K达到最大值400 mV, 此温度点与LSMO薄膜发生金属-绝缘体转变的温度一致, 这表明异质结的光生伏特效应受LSMO薄膜内部的输运特征调控. 进一步, 从光生电压随时间的变化曲线中分析发现, 上升沿符合一阶指数函数, 这与载流子的迁移过程相关; 而下降沿符合二阶指数函数, 这与结两侧载流子的外部回路中和以及材料内部的电子-空穴湮灭有关. 值得注意的是, 上升沿和下降沿的时间常数均随着温度先增大后减小, 且最大值均出现在LSMO薄膜的金属-绝缘转变温度.  相似文献   

6.
采用脉冲激光沉积法分别在(100)LaAlO3和(100)SrTiO3基片上生长了La0.33Pr0.34Ca0.33MnO3薄膜,并通过磁测量和电输运测量对生长在不同基片上的La0.33Pr0.34Ca0.33MnO3薄膜的物性进行了研究.结果表明,基片和薄膜之间的压应力导致La关键词: 钙钛矿锰氧化物 相分离 电荷有序  相似文献   

7.
采用脉冲激光沉积(PLD)技术,利用LSCO/CeO2/YSZ多异质缓冲层,在Si(100)基 片上成功地制备了c轴一致取向的Bi3.15Nd0.85Ti3O12(BNT)铁电薄膜.利用X射线衍射(XRD)和扫描电镜(SEM)分析测定了薄膜的相结构 、取向和形貌特征,考察了沉积温度和氧分压对BNT薄膜微结构、取向和形貌的影响,确定 了BNT薄膜的最佳沉积条件.对在优化的条件下制备得到的BNT薄膜的C-V曲线测试得到了典型 的蝴蝶形曲线,表明该薄膜具有较好的电极化反转存储特性.最后讨论了BNT薄膜铁电性能与 薄膜取向的相关性. 关键词: 3.15Nd0.85Ti3O12')" href="#">Bi3.15Nd0.85Ti3O12 铁电薄 膜 多层异质结 脉冲激光沉积  相似文献   

8.
刘恩华  陈钊  温晓莉  陈长乐 《物理学报》2016,65(11):117701-117701
界面效应在提升异质结构材料的多铁性能方面有着重要的作用. 本文采用脉冲激光沉积技术在SrTiO3(STO)基片上制备了Bi0.8Ba0.2FeO3(BBFO)/La2/3Sr1/3MnO3(LSMO)异质结. X-射线衍射图谱表明异质结呈现单相外延生长, 利用高分辨透射电镜进一步证实了BBFO为四方相结构. X-射线光电子能谱证实异质结中只存在Fe3+ 离子, 没有产生价态的变化, 揭示了异质结铁电和铁磁性的增强与BBFO/LSMO的界面有关. 同时, 测试了磁电阻(MR)和磁介电(MD), 当磁场强度为0.8 T, 温度为70 K时, MR约为-42.2%, MD约为21.2%. 并且发现在180 K时出现磁相的转变. 实验结果揭示出异质界面效应在提升材料的多铁性和磁电耦合效应方面具有超常的优点, 是加快多铁材料实际应用的有效途径.  相似文献   

9.
用激光分子束外延技术在SrTiO3(001)衬底上外延生长了高质量的BaTiO3< /sub>薄膜,薄膜的生长过程由反射式高能电子衍射仪(RHEED)原位实时监测,表明薄膜具有 二维层状生长模式.薄膜的晶体结构和表面形貌分别由X射线衍射和原子力显微镜表征,显示 该薄膜为完全c轴取向四方相晶体结构,其表面具有原子尺度光滑性.采用角分辨X射线光电 子谱技术(ARXPS),研究了BaTiO3薄膜表面最顶层原子种类和排列状况.结果表 明,BaTiO3 关键词: 激光分子束外延 3薄膜')" href="#">氧化物BaTiO3薄膜 最顶层表面 角分辨X射线光电子谱  相似文献   

10.
常雷  蒋毅坚 《物理学报》2009,58(3):1997-2001
利用脉冲激光沉积技术在LaAlO3(00l)单晶衬底上制备了La067Ba033MnO3薄膜,研究了CO2激光辐照对La067Ba033MnO3薄膜的微结构和磁电性能的影响.结果表明,经激光辐照后,La067Ba033MnO3薄膜的结晶性增强,薄膜应变减小;薄膜表面形貌由“岛状”结构变为“平原"结构,且粗糙度大大降低;同时,薄膜的饱和磁化强度、铁磁居里温度、金属—绝缘态转变温度和磁电阻增大,而矫顽场和电阻率减小.根据对传统退火效应的分析和理论计算,认为激光辐照导致的表面微结构的变化以及薄膜的氧含量和均匀性的提高对La067Ba033MnO3薄膜的磁电性能的改善与优化密切相关. 关键词: 庞磁电阻 激光辐照 脉冲激光溅射沉积  相似文献   

11.
采用脉冲激光沉积法制备了BaTiO_3(BTO)与缺氧的铁磁绝缘态La_(0.67)Sr_(0.33)MnO_(3-δ)(LSMO)构成的磁电复合薄膜,研究了20—300K温度区间内磁场对电极化特性和介电特性的影响.研究发现,施加磁场使得电滞回线的剩余极化强度和矫顽场均增大,其变化率峰值分别为111.9%和89.6%,峰值温度分别为40K和60K.异质结具有显著的磁介电效应,在测量温度区间内,磁场使得介电常数增大,介电损耗减小.在0.8T场强下,介电常数的最大磁致变化率出现在60K,达到了300%,而介电损耗也在此温度实现了最大变化,减小为零场时的50.9%.该磁电复合薄膜的磁致电极化和磁介电特性的极值均出现在LSMO层的磁电阻峰值温度附近,这说明磁场对电滞回线和介电参数的调制应该源自电荷相关的耦合作用.其可能的机理是磁场使得锰氧化物中的Mn离子局域磁矩趋于有序排列,并通过自旋-轨道耦合以及界面效应间接影响了BTO的电极化特性.研究结果对于多铁器件的开发和应用具有重要意义.  相似文献   

12.
The effect of Ba(La)TiO3 doping on the structure and magnetotransport properties of La2/3Sr1/3MnO3(LSMO)/xBa(La)TiO3 (x=0.0, 1.0, 5.0 mol%) have been investigated. The X-ray diffraction patterns and microstructural analysis show that BaTiO3 and LSMO phases exist independently in BaTiO3-doped composites. The metal-insulator transition temperature (TMI) decreases whereas the maximum resistivity increases very quickly by the increase of BaTiO3 doping level. The partial substitution of Ba by La(0.35 mol%) results in a decrease in resistivity of LSMO/xBa(La)TiO3 composites. Magnetoresistance of BaTiO3-doped composites decreases monotonously in the temperature range 200-400 K in a magnetic field of 5 T, which is completely different from that of LSMO compound. The value of MR decreases at low field (H<1 T) and increases at high fields (H>1 T) with increasing the BaTiO3 doping level at low temperatures below 280 K. These investigations reveal that the magnetotransport properties of LSMO/xBa(La)TiO3 composites are dominated by spin-dependent scattering and tunneling effect at the LSMO/BaTiO3/LSMO magnetic tunnel junction.  相似文献   

13.
采用多种X射线衍射技术和磁电阻测量技术研究了不同厚度的La0.8Ca0.2MnO3/SrTiO3 (LCMO/STO)薄膜的应变状态及其对磁电阻性能的影响.结果表明,在STO(001)单晶衬底上生长的LCMO薄膜沿[00l]取向生长.LCMO薄膜具有伪立方钙钛矿结构,随着薄膜厚度的增加,面内晶格参数增加,垂直于面内的晶格参数减小,晶格参数ab相近,略小于c.LC 关键词: X射线衍射 微结构 应变 物理性能  相似文献   

14.
Polycrystalline La0.7Sr0.3MnO3 (LSMO) films were prepared on SiO2/Si (001) substrates by chemical solution deposition technique. Electrical and magnetic properties of LSMO were investigated. A minimum phenomenon in resistivity is found at the low temperature (<50 K) under magnetic fields from 0 T to 3 T. Kondo-like spin dependent scattering, which includes both spin polarization and grain boundary tunneling, was observed in the low-temperature electrical transport for the LSMO polycrystalline films. The temperature-dependent resistivity at low temperatures can be well fitted in the framework of elastic scattering, electron-electron (e-e) interaction, Kondo-like spin dependent scattering, and electron-phonon (e-ph) interaction.  相似文献   

15.
用脉冲激光沉积法制备了非金属Te掺杂的钙钛矿锰氧化物La0.82Te0.18MnO3单晶薄膜.该薄膜从83 K升温至373 K过程中发生金属-绝缘体相变,转变点温度为283 K.其电阻率在T<TMI时符合电子-电子、电子-磁振子散射公式;在T>TMI时为小极化子输运.薄膜在低温段连续激光(波长为532 nm,40 mW)作用下电阻率显著增大,电阻变化率在253 K达到最大值51.1%,该变化率远大于相同条件下的空穴掺杂材料;在高温段产生了较小的光电导,电阻变化率小于10%.这些现象主要与激光激励下自旋系统和小极化子的变化有关.La0.82Te0.18MnO3薄膜在激光诱导下具有明显的与自旋相关的弛豫现象.激光开始作用时薄膜电阻率随时间的变化符合指数关系. 关键词: 0.82Te0.18MnO3薄膜')" href="#">La0.82Te0.18MnO3薄膜 光诱导 输运特性 电子掺杂  相似文献   

16.
The perovskite bilayers La0.67Ca0.33MnO3 (LCMO) (100 nm) / La0.67Sr0.33MnO3(LSMO) (100 nm) and LSMO (100 nm) / LCMO (100 nm) are fabricated by a facing-target sputtering technique. Their transport and magnetic properties are investigated. It is found that the transport properties between them are different obviously due to distinguishable structures, and the different lattice strains in both films result in the difference of metal-to-insulator transition. Only single-step magnetization loop appears in our bilayers from 5K to 320K, and the coercive force of LSMO/LCMO varies irregularly with a minimum ~ 2387A/m which is lower than that of LCMO and LSMO single layer films. The behaviour is explained by some magnetic coupling.  相似文献   

17.
The structure, orientation, and the response of electroresistance to magnetic field H and varying temperature T have been studied for 30-nm-thick La0.67Ba0.33MnO3 (LBMO) films. The deviation of the [001] direction in manganite layers from the normal to the plane of the (LaAlO3)0.29 + (SrAl0.5Ta0.5O3)0.71 substrate strictly corresponds to the vicinal angle of the latter. The minimum yield determined from 227-keV proton scattering spectra is 0.025, signifying a high order of the cationic sublattice in the films. The biaxial compression of stable nuclei of the manganite phase affects their stoichiometry, thus contributing to the depletion of LBMO films in the alkaline-earth element. The maximum electroresistance values have been observed in the films grown at T max ≈ 320 K, a temperature about 20 K lower than the Curie temperature of the corresponding bulk single crystals, and the maximum magnetoresistance (MR ≈ −0.42, μ0 H = 2 T) occurs at T ≈ 300 K. At low temperatures (T < T max/3) and μ0 H < 0.45 T, the electroresistance response of LBMO films to a magnetic field materially depends on the anisotropic magnetoresistance and the intensity of hole scattering from domain walls; when μ0 H > 0.5 T, the major current-carrier relaxation mechanism is the interaction with magnons.  相似文献   

18.
The SrRuO3 films (50 nm thick) grown by laser evaporation on (001)(LaAlO3)0.3 + (Sr2AlTaO6)0.7 substrates were under partially relaxed biaxial compressive mechanical stresses. The films consisted of crystallites with lateral dimensions of 40–100 nm and a relative azimuthal misorientation of about 0.9°. Ferromagnetic ordering of spins in the SrRuO3 films was manifested by a change in the slope of the temperature dependence of their electrical resistivity ρ at T ≈ 155 K. For a magnetic field H parallel to the measuring current, the maximum values (∼7.5%) of the magnetoresistance MR = [ρ(μ0 H = 5 T) − ρ(μ0 H = 0)]/ρ(μ0 H = 0) were observed at temperatures of about 100 K. At T = 95 K (μ0 H = 5 T), the anisotropic magnetoresistance of the films was 8% and increased by a factor of approximately 1.5 with decreasing temperature to 4.2 K.  相似文献   

19.
We report the structural, magentoresistance and electro-magnetic properties of ferromagnet–ferroelectric–type (1−x)La0.7Sr0.3MnO3/xBaTiO3 (with x=0.0%, 3.0%, 6.0%, 12%, 15.0% and 18.0%, in wt%) composites fabricated through a solid-state reaction method combined with a high energy milling method. The insulator–metal transition temperature shifts to a lower temperature and resistivity increases while the feromagnetic–paramagnetic transition temperature remains almost unchanged with the increase of BaTiO3 content. Magnetoresistance of the composites at an applied magnetic field H=3 kOe is enhanced in the wide temperature ranges with the introduction of BaTiO3, which could be explained by the enhanced spin polarized tunneling effect induced by the introduction of BaTiO3. The low-field magnetoresistance of the composite is analyzed in the light of a phenomenological model based on the spin polarized tunneling at the grain boundaries. Furthermore, the temperature dependence of resistivity for this series has been best-fitted by using the adiabatic small polaron and variable range hopping models. These models may be used to explain effect of BTO on the electronic transport properties on high temperature paramagnetic insulating region.  相似文献   

20.
Ferromagnetic La0.7Sr0.3MnO3 (LSMO) and antiferromagnetic La0.33Ca0.67MnO3 (LCMO) layers were grown on SrTiO3 (STO) substrates by the pulsed laser deposition technique. LSMO films had rougher surfaces and larger grain sizes than LCMO films. Fully strained bilayers, in which each layer was as thin as 10 nm, were prepared by changing their stacking sequences, i.e. LSMO/LCMO/STO and LCMO/LSMO/STO. The former had higher TC (350 K) than the latter (300 K), and exchange bias effects were only observed in the former bilayers. This revealed that microstructures could play an important role in the transport and magnetic properties of manganese oxide thin films.  相似文献   

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