| Sr/Si界面沉积SrTiO3初始生长阶段的扫描遂道显微术研究 |
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| 引用本文： | 邱云飞,杜文汉,王兵.Sr/Si界面沉积SrTiO3初始生长阶段的扫描遂道显微术研究[J].物理学报,2011,60(3):36801-036801. |
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| 作者姓名： | 邱云飞 杜文汉 王兵 |
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| 作者单位： | 中国科学技术大学合肥微尺度物质科学国家实验室,合肥 230026 |
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| 基金项目： | 国家自然科学基金(批准号:60771006)资助的课题. |
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| 摘 要： | 本文工作利用脉冲激光沉积术(PLD)和超高真空扫描隧道显微术(UHV-STM),研究了在Sr/Si(001)-(2×1)衬底表面上真空室温沉积几个单层SrTiO3薄膜的初始生长过程.经660 ℃退火处理后,Sr/Si衬底表面上形成了纳米岛状结构.经分析,这些纳米小岛为C49-TiSi2和 C54-TiSi2.实验结果表明,在没有氧气的情况下退火,Sr/Si界面无法有效阻止SrTiO3薄膜与Si衬底之间的相互作用.
关键词：
脉冲激光沉积术(PLD)
扫描隧道显微镜(STM)
3')" href="#">SrTiO3
2')" href="#">C54-TiSi2
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| 关 键 词： | 脉冲激光沉积术(PLD) 扫描隧道显微镜(STM) SrTiO3 C54-TiSi2 |
| 收稿时间： | 2010-05-14 |
Initial growth of SrTiO3 on Sr/Si(001) studied by scanning tunneling microscope |
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| Qiu Yun-Fei,Du Wen-Han,Wang Bing.Initial growth of SrTiO3 on Sr/Si(001) studied by scanning tunneling microscope[J].Acta Physica Sinica,2011,60(3):36801-036801. |
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| Authors: | Qiu Yun-Fei Du Wen-Han Wang Bing |
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| Institution: | Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China;Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China;Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China |
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| Abstract: | SrTiO3 ultra-thin film was deposited on the Sr/Si(001) surface using pulsed laser deposition (PLD) at room temperature and studied using scanning tunneling microscopy (STM). After annealing at 660 ℃ for about 60 minutes in ultrahigh vacuum (UHV), nanosize islands were formed on the Sr/Si(001) surface. High resolution STM images and dI/dV mapping of islands on Sr/Si(001) were obtained. The islands can be attributed to TiSi2 islands with C49 and C54 structures. The existence of Sr on Si is not sufficient to prevent the reaction between Si and Ti in preparation of ultra-thin SrTiO3 films. |
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| Keywords: | pulsed laser deposition (PLD) scanning tunneling microscope (STM) SrTiO3 C54-TiSi2 |
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