La0.82Te0.18MnO3薄膜的输运特性和光诱导效应

用脉冲激光沉积法制备了非金属Te掺杂的钙钛矿锰氧化物La0.82Te0.18MnO3单晶薄膜.该薄膜从83 K升温至373 K过程中发生金属-绝缘体相变,转变点温度为283 K.其电阻率在 T相似文献   

Fe3O4薄膜的电输运及光诱导特性研究

用脉冲激光沉积法在(111)Si衬底上成功制备了高度择优取向的Fe₃O₄薄膜.电阻-温度关系表明Fe₃O₄薄膜的Verwey转变(T_V)约在122 K,低温段(T_V)输运特征满足Mott变程跳跃模型,高温段(T>T_V)为小极化子输运.激光作用下的光电导实验发现,在整个温区表现为光致电阻率减小,而且低温段的电阻变化率比高温段要大很多.分析认为Fe₃O₄薄膜的光致电阻率变化主要与激光激发t_2g电子的转移有关. 关键词： 3O₄薄膜')" href="#">Fe₃O₄薄膜 小极化子 光诱导特性     

La0.9Sr0.1MnO3薄膜中电流效应研究

用直流磁控溅射法在(100)LaAlO₃衬底上制备了La_0.9Sr_0.1MnO₃薄膜.经退火处理后薄膜的原子力显微镜形貌观测和X射线衍射分析显示具有比较好的质量.电阻率-温度关系表明La_0.9Sr_0.1MnO₃薄膜在281 K处发生金属绝缘体转变.电流在0.01—4 mA范围内，薄膜的峰值电阻率随电流增大而减小，在4 mA下获得了30.5%的峰值电阻率变 关键词： 掺杂锰氧化合物 0.9Sr_0.1MnO₃薄膜')" href="#">La_0.9Sr_0.1MnO₃薄膜 电流诱导效应 相分离理论     

La0.67Sr0.08Na0.25MnO3的奇特输运性质及CMR效应

用固相反应法制备了La_0.67Sr_0.08Na_0.25MnO₃样品.通过磁化强度-温度(M-T)曲线、电阻率-温度(ρ-T)曲线以及ρ-T拟合曲线研究了样品的输运性质及庞磁电阻(colossal magnetoresistance，CMR)效应.结果表明，ρ-T曲线和磁电阻-温度(MR-T)曲线均出现双峰现象；高温峰是伴随顺磁-铁磁(PM-FM)相变出现绝缘体-金属(I-M)相变，低温峰是颗粒界面效应；两个绝缘相输运机理不同：较低温度下(248K<T<274K)，ρ(T)符合极化子的可变程跃迁模型，而在更高温区(330K<T<374K)，ρ(T)符合极化子近邻跃迁模型；两个类金属相输运机理也不同：在低温区(67K<T<186K)，满足ρ-T^2.5关系，输运机理是自旋波散射和电-磁子散射作用，而在高温区(292K<T<304K)，满足ρ-T²关系，输运机理是单磁子散射作用. 关键词： 庞磁电阻 金属-绝缘体转变 晶界效应 输运行为     

La0.67Ba0.33MnO3薄膜的激光辐照效应研究

利用脉冲激光沉积技术在LaAlO₃（00l）单晶衬底上制备了La_067Ba_033MnO₃薄膜,研究了CO₂激光辐照对La_067Ba_033MnO₃薄膜的微结构和磁电性能的影响.结果表明,经激光辐照后,La_067Ba_033MnO₃薄膜的结晶性增强,薄膜应变减小;薄膜表面形貌由“岛状”结构变为“平原"结构,且粗糙度大大降低;同时,薄膜的饱和磁化强度、铁磁居里温度、金属—绝缘态转变温度和磁电阻增大,而矫顽场和电阻率减小.根据对传统退火效应的分析和理论计算,认为激光辐照导致的表面微结构的变化以及薄膜的氧含量和均匀性的提高对La_067Ba_033MnO₃薄膜的磁电性能的改善与优化密切相关. 关键词： 庞磁电阻 激光辐照 脉冲激光溅射沉积     

La2/3Ca1/3MnO3薄膜的光致电阻率变化特性

射频磁控溅射法制备了La_2/3Ca_1/3MnO₃纳米薄膜(LCMO).该薄膜发生FM-PM相变的转变点温度为T_c≈308K（近似为电阻峰值温度T_p）；在不同温度下的光电导性质实验表明所制备的LCMO薄膜在连续激光作用时低温段（Tc）表现为光致电阻率增大效应，即ΔR/R＞0，并在R-T曲线拐点附近取得极大值，（ΔR/R）_max=43.5%；当T>T关键词： 钙钛矿薄膜 光响应 电子自旋 小极化子     

Co掺杂对铁磁金属La0.8Sr0.2MnO3磁电阻影响机理

通过对La_0.8Sr_0.2Mn_1-yCo_yO₃(y≤02)饱和磁矩和输运的测量,研究了Co对La_0.8Sr_0.2MnO₃的磁电阻影响机制.结果表明,在La_0.8Sr_0.2Mn_1-yCo_yO₃（y≤02）中Co³⁺离子是低自旋态.由于Mn³⁺—O—Co³⁺—O—Mn³⁺类型的磁交换与Mn³⁺-Mn⁴⁺离子间双交换作用相比较弱,Curie温度T_C附近的磁电阻随着Co掺杂量的增加而降低.与此相反,由于Co²⁺离子与e_g巡游电子的反铁磁交换耦合作用,低温区间的磁电阻随着Co掺杂量的增加而升高. 关键词： 低自旋 磁电阻 磁交换作用     

SrTiO3掺杂La-K-Mn-O系统的电磁性质

用溶胶-凝胶制备了La_0.833K_0.167MnO₃-SrTiO₃ (LKMO/STO)系列样品，并研究了它们的结构、磁性和输运特性.X射线衍射实验表明，1200℃烧结的LKMO/STO (STLK12)是一个均匀的固溶相.其电阻率表现为绝缘体的行为，而纯La_0.833K_0.167MnO₃ (LKMO)样品随温度的升高则有金属-绝缘体转变.在低场下(μ₀H=0.02 T)，对STLK12样品，当温度从220 K降低到4 K时，磁电阻从0.2%升高到11%.在高场下(μ₀H=5.5 T)，随着温度降低，磁电阻几乎是线性增大.在4.2 K时，达到65%.比纯LKMO样品40%的磁电阻高出了25%. 我们用晶界处的自旋极化隧穿效应定性地解释了这种增强的磁电阻效应. 关键词： 低场磁电阻 高场磁电阻 自旋极化隧穿 钙钛矿     

La0.33Pr0.34Ca0.33MnO3薄膜的应变效应

采用脉冲激光沉积法分别在(100)LaAlO₃和(100)SrTiO₃基片上生长了La_0.33Pr_0.34Ca_0.33MnO₃薄膜,并通过磁测量和电输运测量对生长在不同基片上的La_0.33Pr_0.34Ca_0.33MnO₃薄膜的物性进行了研究.结果表明,基片和薄膜之间的压应力导致La_{关键词： 钙钛矿锰氧化物 相分离 电荷有序}     

La1－xPrxMnO3(x=0.1，0.2)薄膜庞磁电阻性质的研究

一种新的庞磁电阻氧化物薄膜La_1-xPr_xMnO₃(x=0.1，0 .2)薄膜用脉冲激光沉积(PLD)方法生长在(100)SrTiO₃单晶基底上.XRD结果显示 薄膜具有很好的外延单晶取向.电输运和磁性质的研究表明薄膜具有显著的庞磁电阻效应(CM R)效应，其中磁电阻比率达95％(在5T的磁场下).X射线光电子能谱(XPS)的结果表明薄膜体 系中Pr离子的价态为+4价，因此该薄膜很可能是电子掺杂的庞磁电阻体系. 关键词： 脉冲激光沉积 1-xPr_xMnO₃')" href="#">La_1-xPr_xMnO₃ 电子 掺杂 庞磁电阻     

Electronic transport and magnetic studies of La1−xCax−0.08Sr0.04Ba0.04MnO3

Lanthanum based mixed valence manganite system La_1−xCa_x−0.08Sr_0.04Ba_0.04MnO₃ (LCSBMO; x=0.15, 0.24 and 0.33) synthesized through the sol-gel route is systematically investigated in this paper. The electronic transport and magnetic susceptibility properties are analyzed and compared, apart from the study of unit cell structure, microstructure and composition. Second order phase transition is observed in all the samples and significant difference is observed between the insulator to metal transition temperature (T_MI) and paramagnetic (PM) to ferromagnetic (FM) transition temperature (T_C). In contrast to the insulating FM behaviour usually observed in La_1−xCa_xMnO₃ (LCMO) for x=0.15, a clear insulator to metal transition is observed for LCSBMO for the same percentage of lanthanum. The temperature dependent resistivity of polycrystalline pellets, when obeying the well studied law ρ=ρ_o+ρ₂T² for T<T_MI, is observed to differ significantly in the values of ρ_o and ρ₂, with the electrical conductivity increasing with x. The variable range hopping model has been found to fit resistivity data better than the small polaron model for T>T_MI. AC magnetic susceptibility study of the polycrystalline powders of the manganite system shows the highest PM to FM transition of 285 K for x=0.33.     

La2/3Sr1/3MnO3/BaTiO3复合薄膜的制备及其电致磁电效应研究

使用脉冲激光沉积技术,在LaAlO₃(001)单晶基片上制备了La_2/3Sr_1/3MnO₃(LSMO)/BaTiO₃(BTO)双层薄膜.X射线衍射分析显示,LSMO层和BTO层呈现纯(001)取向.原子力显微镜研究表明,薄膜表面晶粒大小均匀,排列致密,表面均方根粗糙度为1.4 nm.复合薄膜的磁学、电学性能研究表明,其具有良好的磁学和介电性能.电输运测试显示,与在BTO层上施加正方向 关键词： 磁电效应 铁电/铁磁异质结构 脉冲激光沉积     

Pr0.7(Sr1-xCax)0.3MnO3多晶体系中的小极化子性质

采用基于柠檬酸体系的溶胶-凝胶法制备了Pr_0.7（Sr_1-xCa_x）_0.3MnO₃系列的多晶块材, 同时还用脉冲激光沉积技术（PLD）在SrTiO₃（100）衬底上外延生长了同一系列的薄膜, 系统研究了它们的晶格结构和电输运行为. 多晶和薄膜样品都具有正交晶格结构, 电输运行为在居里温度T_Ｃ以上的高温顺磁相都很好 关键词： 0.7（Sr_1-xCa_x）_0.3MnO₃')" href="#">Pr_0.7（Sr_1-xCa_x）_0.3MnO₃ 绝热小极化子模型 双交换作用 Jahn-Teller晶格畸变     

Pulsed laser deposition of NdNiO3 thin films

We report the structural and transport properties of NdNiO₃ thin films prepared via pulsed laser deposition over various substrates. The films were well textured and c-axis oriented with good crystalline properties. The electrical resistivity of the films undergoes a metal-insulator transition, depending on the deposition process. Well-defined first order metal-insulator phase transition (T_MI) was observed in the best quality films without high pressure processing. Various growth conditions such as substrate temperature, oxygen pressure and thickness were varied to see their influence on T_MI. Deposition temperature was found to have a great impact on the electrical and structural properties of these films. Further the films deposited on LaAlO₃ substrate were found to be highly oriented with uniform grain size as observed from X-ray diffraction and atomic force microscopy, whereas those on Si substrate were polycrystalline, dense and randomly oriented.     

Electrical transport of (1−x)La0.7Ca0.3MnO3+xAl2O3 composites

We report the resistivity (ρ)-temperature (T) patterns in (1-x)La_0,7Ca_0,3MnO₃+xAl₂O₃ composites (0≤x≤0.05) over a temperature regime of 50-300 K. Al₂O₃ addition has increased the resistivity of these composites. The Curie temperature (T_C) is almost independent on the Al₂O₃ content and is about 250 K for all the samples, while the metal-insulator transition temperature (T_MI) decreases with increasing Al₂O₃ content. Based on the phenomenological equation for conductivity under a percolation approach, which is dependent on the phase segregation of ferromagnetic metallic clusters and paramagnetic insulating regions, we fitted the experimental data (ρ−T) from 50 to 300 K and find that the activation barrier increases as Al₂O₃ content increases.     

Influence of Fe doping on electrical properties of LCMO

The polycrystalline samples La_0.67Ca_0.33Mn_(1?x)Fe _x O₃ (x?=?0.00,?0.01,?0.03, and 0.1) have been grown in single phase by solid state route. The analysis of the reaction has been done by thermogravimetry and differential thermal analysis measurements. DC electrical resistivity measurements have been carried out down to 15?K. The samples with x?=?0.00, 0.01, and 0.03 exhibit metal–insulator (MI) transition at temperatures 221.5?K, 217?K, and 215?K respectively, whereas the sample with x?=?0.1 is insulating in nature for entire temperature range. Interestingly, the electric transport properties of these samples are not consistent with their magnetic phase transitions and the samples show MI transition at a temperature, T _MI, which is significantly lower than the paramagnetic to ferromagnetic transition temperature (T _c). The resistivity data below T _MI has been analyzed using the empirical relation ρ?=?ρ₀?+?ρ₁ T ⁿ and the data above this temperature has been analyzed using two existing models, Mott's variable range hopping model and spin polaronic conduction model.     

High temperature thermoelectric properties of highly c-axis oriented Bi2Sr2Co2Oy thin films fabricated by pulsed laser deposition

High-temperature thermoelectric transport property measurements have been performed on the highly c-axis oriented Bi2Sr2Co20v thin films prepared by pulsed laser deposition on LaA1Oa （001）. Both the electric resistivity p and the seebeck coefficient S of the film exhibit an increasing trend with the temperature from 300 K-1000 K and reach up to 4.8 m. cm and 202 V/K at 980 K, resulting in a power factor of 0.85 mW/mK which are comparable to those of the single crystalline samples. A small polaron hopping conduction can be responsible for the conduction mechanism of the film at high temperature. The results demonstrate that the Bi2Sr2Co2Oy thin film has potential application has high temperature thin film thermoelectric devices,     

Preparation and study of silver added La0.67Ca0.33MnO3 film

La_0.67Ca_0.33MnO₃ (LCMO) and Ag admixed La_0.67Ca_0.33MnO₃ (Ag-LCMO) polycrystalline films have been prepared on SrTiO₃ single crystal (100) substrates by ultrasonic spray pyrolysis technique. These films are characterized using XRD, SEM, and temperature dependence of resistivity (ρ-T) and ac susceptibility (χ-T). The films are having cubic structure with lattice parameters as 3.890 and 3.885 Å for LCMO and Ag-LCMO films, respectively. The peek in ρ-T curve (T_p) and the ferromagnetic transition temperature (T_C) for the Ag-LCMO film is higher than that of LCMO film. The stability of both the films was tested by repeated measurements of its characteristics over a period of one week after several thermal cycling from room temperature to 77 K. In the LCMO film, the peak in the ρ-T curve (T_p) is found to shift towards lower value and conduction noise of the film increases in the subsequent measurements. In the case of Ag-LCMO the value of T_p, T_C and conduction noise of the film did not change even after several measurements. Silver segregating at the grain boundaries in Ag-LCMO polycrystalline film seems to be responsible for improving the characteristics of Ag-LCMO films.     

Electrical transport and magnetic properties of La2/3Ca1/3MnO3/SiO2 composites

The influence of SiO₂ on the electrical transport properties of LCMO/SiO₂ composites with different SiO₂ contents x is investigated, where LCMO represents La_2/3Ca_1/3MnO₃. Results show that the SiO₂ phase not only shifts the metal–insulator transition temperature (T_p) to a high temperature range, but also has an effect on the magnetoresistance (MR) of the composites. The temperature dependence of resistivity indicates that the T_p of the composites is obviously higher than that of pure LCMO, and that the peak resistivity ρ_max of the composites is lower than that of pure LCMO. In the SiO₂ content x∼0.02, the T_P is the highest and ρ_max becomes the lowest. The experimental observation is discussed on the basis of the analysis of scanning electron microscopy (SEM) images and X-ray diffraction (XRD) patterns. Compared with pure LCMO, a possible interpretation is presented by considering the influence of SiO₂ on the coupling between ferromagnetic (FM) domains of LCMO.