Si基铁电Bi3.15Nd0.85Ti3O12多层薄膜的一致取向生长和性能的研究

采用脉冲激光沉积(PLD)技术，利用LSCO/CeO₂/YSZ多异质缓冲层，在Si(100)基 片上成功地制备了c轴一致取向的Bi_3.15Nd_0.85Ti₃O12(BNT)铁电薄膜.利用X射线衍射(XRD)和扫描电镜(SEM)分析测定了薄膜的相结构 、取向和形貌特征，考察了沉积温度和氧分压对BNT薄膜微结构、取向和形貌的影响，确定 了BNT薄膜的最佳沉积条件.对在优化的条件下制备得到的BNT薄膜的C-V曲线测试得到了典型 的蝴蝶形曲线，表明该薄膜具有较好的电极化反转存储特性.最后讨论了BNT薄膜铁电性能与 薄膜取向的相关性. 关键词： 3.15Nd_0.85Ti₃O₁₂')" href="#">Bi_3.15Nd_0.85Ti₃O₁₂ 铁电薄 膜 多层异质结 脉冲激光沉积

Growth and properties of the c-axis oriented Bi3.15Nd0.75 Ti3O12 ferroelectric multi-layer thin films on silicon substrates

The c-axis oriented Bi_3.15Nd_0.75Ti₃O_{12(BNT) ferroelectric thin films were grown on Si(100) substrates by pulsed lase r deposition with La0.5Sr0.5CoO3/CeO2/Y0.18Zr0.91O2.01 multi-heterostructure as buf fer layer. X-ray diffraction and scanning electron microscopy were used to deter mine the microstructure, orientation and morphology of the multi-layer films. Th e influence of deposition temperatures and the partial oxygen pressure on the mi crostructure, orientation and morphology of the BNT films were investigated and the optimal deposition parameters were determined. The BNT multi-layer thin film s deposited under optimal condition have good electric properties. The C-V patte rn of the BNT multilayer thin films deposited under optimal deposition condition s has the typical butterfly-like shape, suggesting that the films have good pola rization-reversion storage properties. The correlation between the ferroelectric properties and the orientations of the BNT films is discussed.}