一种研究自旋翻转散射效应的新方法

金属中自旋翻转散射长度远长于电子平均自由程，近来关于自旋翻转散射效应的研究主要集中于扩散区域．文章作者提出了一种使用双势垒磁性隧道结来研究纳米尺度结构中弹道区域的自旋翻转散射效应的新方法．这种方法可以从磁电输运性质的测量，得出中间隔离层中的自旋翻转散射效应的温度和偏压关系，进一步可以得出诸如电子平均自由程和自旋翻转散射长度等自旋散射信息，以及中间层的态密度和量子阱信息．     

成分调制的La1-xSrx MnO3复合隧道结

利用磁控溅射和Sr成分的调制以及原位热处理方法,在10mm×10mm大小的(001)取向SrTiO3单晶衬底上制备出三明治结构为La0.7Sr0.3MnO3(100nm)/La0.96Sr0.04MnO3(5nm)/La0.7Sr0.3MnO3(100nm)的隧道结外延薄膜,然后再次利用磁控溅射方法,在三层单晶膜上方继续沉积Ir22Mn78(15nm)/Ni79Fe21(5nm)/Pt(20nm)等金属三层膜.最后利用深紫外曝光和Ar离子束刻蚀等微加工技术,制备出长短轴分别为12和6μm或者8和4μm大小的椭圆形La1-xSrxMnO3成分调制的复合磁性隧道结.在4.2K和外加磁场8 T的测试下,La1-xSrxMnO3成分调制的复合磁性隧道结其隧穿磁电阻(TMR)比值达到3270%,直接从实验上证实了铁磁性La07Sr0.3MnO3金属氧化物的自旋极化率(97%)可接近100%,具有很好的半金属性质.     

成分调制的La1－xSrxMnO3复合隧道结

利用磁控溅射和Sr成分的调制以及原位热处理方法，在10mm×10mm大小的(001) 取向SrTiO_３单晶衬底上制备出三明治结构为La_0.7Sr_0.3MnO３(100nm)/La_0.96Sr_0.04MnO_３ (5nm)/ La0.7Sr_0.3MnO_３ (100nm) 的隧道结外延薄膜，然后再次 利用磁控溅射方法，在三层单晶膜上方继续沉积Ir_２２Mn_７８(15n m)/Ni_７９Fe_２１(5nm)/Pt(20nm)等金属三层膜.最后利用深紫外曝 光和Ar离子束刻蚀等微加工技术，制备出长短轴分别为12和6μm或者8和4μm大小的椭圆形L a_１-xSr_xMnO_３成分调制的复合磁性隧道结.在4.2K和 外加磁场8 T的测试下，La_１-xSr_xMnO_３成分调制的复 合磁性隧道结其隧穿磁电阻(TMR)比值达到3270%, 直接从实验上证实了铁磁性La_{0.7Sr0.3MnO３金属氧化物的自旋极化率（97%）可接近100％，具 有很好的半金属性质. 关键词： １-x}Sr_xMnO_３')" href="#">La_１-xSr_xMnO_３ 半金属 成分调制 复合磁性隧道 结 隧穿磁电阻     

Current-Induced Resistive Effect in Cu/MgO/La0.9Sr0.1 MnO3 Trilayers on SrTiO3 （001） Substrates

Cu/MgO/La0.9Sr0.1MnO3 pillars are fabricated on SrTiO3 （001） substrates by the micro-fabrication patterning processes. Their electric transport properties have been measured in the temperature range from the temperature smaller than the Curie one to 300K. At 125K there emerges abrupt breaks of output voltage in voltage-current （Ⅴ-Ⅰ） curves, corresponding to switching in resistance to metastable states, and finally two closed loops are formed with double threshold biases. Around room temperature the Ⅴ-Ⅰ characteristics are non-ohmic and show some gradual hysteresis when sweeping the current in a round-trip scan. A large current-induced resistive change △R/R0, ～-63.2%, is obtained under a current density of 1.0 × 10^4 Acm^-2. Especially, △ R/ R0 depends linearly on the applied current and is independent of the applied magnetic field. The current-induced resistive effect should be of interest for various applications such as switching and field effect devices.     

Vortex domain structures and dc currentdependence of magneto-resistances in magnetic tunnel junctions

Microfabrication and the magneto-transport characteristics of the magnetic tunnel junctions (MTJs) with a spin-valve-type structure of Ta (5nm)/Ni_{79}Fe_{21} (25nm)/Ir_{22}Mn_{78} (12nm)/Co_{75}Fe_{25} (4nm)/Al(0.8nm) oxide/Co_{75}Fe_{25} (4nm)/Ni_{79}Fe_{21} (20nm)/Ta(5nm) were investigated in this paper. A series of experimental data measured with a MTJ was used to verify a magnon-assisted tunnelling model and theory. Furthermore, a micromagnetics simulation shows that the butterfly-like vortex domain structures can be formed under a current-induced Oersted field, which decreases the net magnetization values of the ferromagnetic electrodes under a large dc current (i.e., in high voltage regimes). It is one of the main reasons for the tunnel magnetoresistance ratios to decrease significantly at high voltage biasing.     

Magnetic two-dimensional van der Waals materials forspintronic devices

Magnetic two-dimensional (2D) van der Waals (vdWs) materials and their heterostructures attract increasing attention in the spintronics community due to their various degrees of freedom such as spin, charge, and energy valley, which may stimulate potential applications in the field of low-power and high-speed spintronic devices in the future. This review begins with introducing the long-range magnetic order in 2D vdWs materials and the recent progress of tunning their properties by electrostatic doping and stress. Next, the proximity-effect, current-induced magnetization switching, and the related spintronic devices (such as magnetic tunnel junctions and spin valves) based on magnetic 2D vdWs materials are presented. Finally, the development trend of magnetic 2D vdWs materials is discussed. This review provides comprehensive understandings for the development of novel spintronic applications based on magnetic 2D vdWs materials.     

La0.67Ca0.33MnO3薄膜皮秒光电效应

在1064 nm波长脉冲激光（脉宽25 ps）的照射下，钙钛矿氧化物薄膜La0.67Ca0.33MnO3/SrTiO3具有超快光电效应，对激光脉冲显示ps量级的响应时间，上升沿响应时间300 ps，半高宽700 ps，同时，对激光能量的响应灵敏度为500 mV/mJ。     

Magnetotransport properties of La0.67Ca0.33MnO3//La0.67Sr0.33MnO3 bilayers

The perovskite bilayers La0.67Ca0.33MnO3 （LCMO） （100 nm） / La0.67Sr0.33MnO3（LSMO） （100 nm） and LSMO （100 nm） / LCMO （100 nm） are fabricated by a facing-target sputtering technique. Their transport and magnetic properties are investigated. It is found that the transport properties between them are different obviously due to distinguishable structures, and the different lattice strains in both films result in the difference of metal-to-insulator transition. Only single-step magnetization loop appears in our bilayers from 5K to 320K, and the coercive force of LSMO/LCMO varies irregularly with a minimum ～ 2387A/m which is lower than that of LCMO and LSMO single layer films. The behaviour is explained by some magnetic coupling.     

Origin of ultraviolet photovoltaic effect in Fe3O4 thin films

We have investigated the transport and ultraviolet photovoltaic properties of Fe$_{3}$O$_{4}$ thin films grown on glass substrates by facing-target sputtering technique. The nonlinear dependence of current-density on voltage suggests that the transport process is most likely the tunnelling process and grain boundaries act as barriers. Furthermore, nonequilibrium electron-hole pairs are excited in the grains and grain boundary regions for Fe$_{3}$O$_{4}$ film under ultraviolet laser, since the energy gap of Fe$_{3}$O$_{4}$ is smaller than the ultraviolet photon energy. And then the built-in electric field near the grain boundaries will separate carriers, leading to the appearance of an instant photovoltage.     

薄膜异质结中磁性斯格明子的相关研究

磁性斯格明子由于具有拓扑保护、尺寸小、驱动电流密度低等优异的属性,有望作为未来超高密度磁存储和逻辑功能器件的信息载体.为了满足器件中信息写入和读取的基本要求,需要在室温下实现斯格明子的精确产生、操控和探测.该综述简要介绍最近我们针对上述问题取得的一系列研究进展,包括:1)证明可以通过控制磁性薄膜材料的垂直磁各向异性在室温下产生斯格明子,并进一步在基于反铁磁的薄膜异质结中发现了室温、零磁场下稳定存在的斯格明子;2)证明能够利用电流产生的自旋轨道力矩操控斯格明子,并进一步制备出一种基于斯格明子的原理型器件,实现了利用电学方式产生和操控数量可控的斯格明子.