高能质子引起器件单粒子效应的研究方法

简略介绍了高能质子在半导体芯片中引起单粒子效应的实验测量和理论分析方法,包括核反应分析方法、半经验方法,介绍了质子和重离子翻转截面间的关系,并用重离子实验数据预测器件在质子环境下的翻转率. This article introduces briefly the experimental and theoretical methods that have been used to study high energy proton induced single event effect in semiconductor devices. The theoretical methods including nuclear reaction analysis method and semi empirical method are presented. The relationship of upset cross section between proton and heavy ions is described. Finally, on orbit proton upset rates are predicted by using the heavy ion test data.     

重离子在半导体器件中引起的单粒子效应

重离子引起的单粒子效应是威胁航天器安全的重要因素之一 ,利用加速器进行地面模拟是研究单粒子效应的重要手段 .概述了单粒子效应研究的历史和现状,讨论了单粒子效应研究的基本方法 ,最后简要介绍了在兰州重离子加速器上已开展的单粒子效应研究工作. Single event effects (SEE ′s) have been observed in semiconductor device in space since 1975. It has been verified from many spaceflight tests that single event effect induced by cosmic ray is one of the important sources of anomalies and malfunctions of spacecraft. Initially, a brief outline of space radiation environment is given. The history and recent trends were described, and basic methods and necessary facilities for SEE testing were also discussed. Finally, the research ...     

深亚微米SRAM质子单粒子翻转实验研究

宇航半导体器件运行在一个复杂的空间辐射环境中,质子是空间辐射环境中粒子的重要组成部分,因而质子在半导体器件中导致的辐射效应一直受到国内外的关注。利用兰州重离子加速器(Heavy Ion Research Facility In Lanzhou) 加速出的H2 分子打靶产生能量为10 MeV 的质子,研究了特征尺寸为0.5/0.35/0.15 μm体硅和绝缘体上硅(SOI) 工艺静态随机存储器(SRAM) 的质子单粒子翻转敏感性,这也是首次在该装置上开展的质子单粒子翻转实验研究。实验结果表明特征尺寸为亚微米的SOI 工艺SRAM器件对质子单粒子翻转不敏感,但随着器件特征尺寸的减小和工作电压的降低,SOI 工艺SRAM器件对质子单粒子翻转越来越敏感;特征尺寸为深亚微米的体硅工艺SRAM器件单粒子翻转截面随入射质子能量变化明显,存在发生翻转的质子能量阈值,CREME-MC模拟结果表明质子在深亚微米的体硅工艺SRAM器件中通过质子核反应导致单粒子翻转。Microelectronic devices are used in a harsh radiation environment for space missions. Among all the reliability issues concerned, proton induced single event upset (SEU) is becoming more and more noticeable for semiconductor components exposed on space. In this work, an experimental research of SEU induced by 10 MeV proton for static random access memory (SRAM) of 0.5, 0.35 and 0.15 m feature size is carried out on HeavyIon Research Facility in Lanzhou for the rst time. The experimental results show that proton induced SEUs in submicron and deep-submicron (SRAMs) are dominated by secondary ions generated by proton nuclear reaction events. The silicon-on-insulator SRAMs characters natural radiation-hardened SEU by proton. For the deep-submicron bulk-silicon technology SRAM, the proton SEU cross section is closely related to the proton energy and there is a threshold energy for the SEU occurrence by proton indirect ionization. CREME-MC simulation indicates that the SEU events in deep-submicron SRAM are induced by the proton nuclear reaction.     

用重离子实验数据推算质子翻转截面和轨道翻转率

空间单粒子辐射环境主要由重离子和高能质子构成,但在地面利用两种离子评估器件单粒子效应敏感度成本太高,因此利用重离子实验数据推算质子敏感参数成为一个非常活跃的研究课题.利用Barak经验公式,在重离子实验获得器件的σ LET值曲线的基础上,计算了几种典型器件在不同能量下的质子翻转截面以及典型轨道上质子引起的翻转率,并同FOM方法预示的质子翻转率进行了比较,其结果将对卫星电子系统抗辐射加固设计具有重要参考价值. The radiation environments concerned with single event upset mainly consist of heavy ions from cosmic ray and large flux proton from solar events and planetary radiation belts. The most reliable calculation for SEE rate induced by proton and henvy ions are the way to use the experimentally measured data rospectively. But it is too expensive to test devices with both heavy ions and protons. So it is necessary to derive models for predicting proton cross sections and rates from heavy ion test data....     

高能重离子碰撞中的动力学涨落与量子混沌(英文)

Wigner- Dyson型的随机矩阵理论作为一种可能的统计分析方法用来分析高能重离子碰撞中所产生的粒子谱的某些无规性 ,此统计分析方法被用来初步分析了EMU0 1的实验结果 ,通过分析可以看出在 CERN/SPS和 BNL/AGS能区粒子主要是随机产生的. In high energy heavy ion collisions, a possible measure for a certain irregularity of the spectra of produced particles is proposed by using the Wigner-Dyson statistical analysis method. The preliminary results from EMU01 experiments are given by using this statistical analysis method. The analysis shows that the dominant effect is random emission in available high energy nucleus-nucleus collisions at CERN/SPS and BNL/AGS regions.     

离子微束技术及其多学科应用

通过微米孔准直或电磁聚焦技术可将加速器产生的MeV离子束形成微米尺寸的离子束斑(微束), 从而用来研究固体和生物样品的微米空间分辨的材料信息和辐照响应。 结合MeV离子微束的发展历史综述了微束技术和跨学科应用, 包括利用微束开展具有空间分辨的离子束分析、 单粒子效应、 微纳加工和细胞辐射响应等研究。 介绍了中国科学院近代物理研究所的高能重离子微束辐照装置, 该装置成功地将总能量为1 GeV的C离子在大气中聚焦为1 μm×2 μm的微米束斑。 Beam of MeV ions from particle accelerators can be confined by collimators or focused by electrical/magnetic quadruples into micrometer size, and this microbeam can be used to obtain spatial information or radiation effect in solids and biological samples. This paper reviews the technical developments and the multi disciplinary applications of microbeam, including ion beam analysis, single event effect in semiconductor devices, proton beam writing and cellular response to targeted particle irradiations. Finally, the high energy heavy ion microbeam facility at the Institute of Modern Physics of Chinese Academy of Sciences is introduced, which has successfully focused 1 GeV Carbon ions into a beam spot of 1 μm×2 μm in air.     

HIAF高能辐照终端感生放射性

本工作是基于蒙特卡罗模拟软件FLUKA对高能强流重离子加速器（HIAF）高能辐照终端感生放射性进行初步研究。该终端可运行质子最高能量为9.3 GeV,最大流强是1.45×1012 pps（particle per second）。研究内容包括:（1）预测高能辐照终端内活化物质的放射性活度特性;（2）预测不同冷却时间高能辐照终端内残余剂量率分布。研究结果表明,HIAF正常运行时高能辐照终端内的感生放射性主要受束流垃圾桶活化产生的放射性核素影响。当加速器连续运行100天冷却4小时,垃圾桶表面残余剂量率为2.375 mSv·h-1。终端内空气中13N和15O动态饱和比浓度大于其对应的导出空气浓度。冷却水中13N和15O的活度大于对应的ALI_min。该研究是HIAF辐射防护基础研究以及加速器环境影响评价的一项重要内容。The Monte Carlo code FLUKA was used to predict the induced radioactivity of high-energy irradiation terminal of HIAF. The maximum energy of proton is 9.3 GeV, and the maximum current is 1.45×1012 pps (particle per second). In this study we were to predict:(1) the activity properties of activated substances in the experimental terminal; (2) the residual dose rate distribution in the experimental terminal at different cooling time. The results indicate that the induced radioactivity in the high energy irradiation terminal of the HIAF is mainly affected by the radionuclide induced in the beam dump. The residual dose rate on the surface of the beam dump is 2.375 mSv·h-1, after 100 d irradiation and 4 h cooling. The dynamic saturation ratio of 13N and 15O induced in the air inside the terminal is higher than its corresponding derived air concentration. The activity of 13 N and15O induced in cooling water is higher than its ALI_min. This study is a part of radiation protection basic research and environmental impact assessment for HIAF.     

基于重离子试验数据预测纳米加固静态随机存储器质子单粒子效应敏感性

为实现对纳米DICE (dual interlocked cell)加固器件抗质子单粒子能力的准确评估,通过对65 nm双DICE加固静态随机存储器(static random access memory, SRAM)重离子单粒子翻转试验数据的分析,获取了其在重离子垂直和倾角入射时的单粒子翻转(single event upset, SEU)阈值以及离子入射最劣方位角,并结合蒙卡仿真获取不同能量质子与器件多层金属布线层发生核反应产生的次级粒子LET(linear energy transfer)值最大值以及角度分布特性,对器件在不同能量下的质子单粒子效应敏感性进行了预测,质子单粒子效应实验结果验证了预测方法的有效性以及预测结果的准确性,并提出针对DICE加固类器件在重离子和质子单粒子效应试验评估中均应开展离子最劣方位角下的倾角入射试验.     

HIAF BRing及高能外靶实验终端的辐射屏蔽设计

强流重离子加速器（HIAF）是中国科学院近代物理研究所自主研制的一台高能强流重离子加速器,它可以实现p到U的全离子加速。为了保证HIAF运行时的辐射安全,针对该装置的增强器（BRing）及高能外靶实验终端,利用蒙特卡洛程序FLUKA及外推法计算得到了加速p,C及U三种离子时所需的辐射屏蔽。结果表明,加速质子时所需屏蔽厚度最大,并以此为依据给出了全地下结构的屏蔽设计。在此基础上,提出了一种估算高能质子/重离子加速器束流均匀损失时横向屏蔽厚度的方法。结果显示,估算结果与FLUKA计算结果符合较好,验证了该方法的有效性和准确性。High Intensity heavy-ion Accelerator Facility (HIAF) is designed by the Institute of Modern Physics, Chinese Academy of Sciences, which can accelerate particles from proton up to uranium. To guarantee the radiation safety of HIAF during operation, the FLUKA code and extrapolation method were adopted to calculate the shielding thickness. The calculations were based on proton, carbon and uranium particles when losing on the Booster Ring (BRing) and the high-energy experimental terminal. The results indicate that the shielding thickness required for accelerating protons was the largest. Basing on the results, a method for estimating the lateral shielding of a high-energy proton/heavy-ion accelerator was proposed. A good agreement shows between the estimated results and the FLUKA calculated results, the validity and accuracy of the method were verified.     

Modeling the applicability of linear energy transfer on single event upset occurrence

Geant4 tools were used to model the single event upset (SEU) of static random access memory cells induced by heavy ion irradiation. Simulated results obtained in two different regions of incident ion energies have been compared in order to observe the SEU occurrence by energetic ions and their effects on the radial ionization profile of deposited energy density. The disagreement of SEU cross sections of device response and radial distribution of deposited energy density have been observed in both low energy and high energy regions with equal linear energy transfer (LET) which correspond to the both sides of the Bragg peak. In the low energy region, SEUs induced by heavy ions are more dependent upon the incident ion species and radial distribution of deposited energy density, as compared with the high energy region. In addition, the velocity effect of the incident ion in silicon in the high energy region provides valuable feedback for gaining insight into the occurrence of SEU.     

纳米静态随机存储器质子单粒子多位翻转角度相关性研究

器件特征尺寸的减小带来单粒子多位翻转的急剧增加, 对现有加固技术带来了极大挑战. 针对90 nm SRAM(static random access memory, 静态随机存储器)开展了中高能质子入射角度对单粒子多位翻转影响的试验研究, 结果表明随着质子能量的增加, 单粒子多位翻转百分比和多样性增加, 质子单粒子多位翻转角度效应与质子能量相关. 采用一种快速计算质子核反应引起单粒子多位翻转的截面积分算法, 以Geant4中Binary Cascade模型作为中高能质子核反应事件发生器, 从次级粒子的能量和角度分布出发, 揭示了质子与材料核反应产生的次级粒子中, LET(linear energy transfer)最大, 射程最长的粒子优先前向发射是引起单粒子多位翻转角度相关性的根本原因. 质子能量、临界电荷的大小是影响纳米SRAM器件质子多位翻转角度相关性的关键因素. 质子能量越小, 多位翻转截面角度增强效应越大; 临界电荷的增加将增强质子多位翻转角度效应.     

纳米静态随机存储器低能质子单粒子翻转敏感性研究

针对65, 90, 250 nm三种不同特征尺寸的静态随机存储器基于国内和国外质子加速器试验平台, 获取了从低能到高能完整的质子单粒子翻转截面曲线. 试验结果表明, 对于纳米器件1 MeV以下低能质子所引起的单粒子翻转截面比高能质子单粒子翻转饱和截面最高可达3个数量级. 采用基于试验数据和器件信息相结合的方法, 构建了较为精确的复合灵敏体积几何结构模型, 在此基础上采用蒙特卡罗方法揭示了低能质子穿过多层金属布线层, 由于能量岐离使展宽能谱处于布拉格峰值的附近, 通过直接电离方式将能量集中沉积在灵敏体积内, 是导致单粒子翻转截面峰值的根本原因. 并针对某一轨道环境预估了低能质子对空间质子单粒子翻转率的贡献.     

质子辐照下正照式和背照式图像传感器的单粒子瞬态效应

CMOS图像传感器应用于空间任务时容易受到质子单粒子效应影响.本文采用商用正照式(FSI)和背照式(BSI)CMOS图像传感器开展了不同能量的质子辐照实验,实验中通过在线测试方法分析质子单粒子效应.其中,质子能量最高为200 Me V,总注量为10¹⁰ particle/cm~2,结果未发现外围电路的单粒子效应,但观察到像素阵列出现不同形状的单粒子瞬态亮斑.通过提取瞬态亮斑沉积能量和尺寸大小两个特征参数,比较了不同能量质子对瞬态亮斑特征的影响,以及FSI和BSI中瞬态亮斑特征的差异.最后,结合仿真方法,与实验结果进行比较,预测了质子在CMOS图像传感器像素单元产生瞬态亮斑的能量沉积分布.仿真结果验证了光电二极管耗尽区厚度减小和外延层减薄是导致BSI图像传感器中质子能量沉积分布左移的主要因素.     

卫星光通信系统中SRAM/MOS器件的单粒子翻转率分析

为了分析单粒子事件对卫星光通信系统造成的影响,需要预估器件的单粒子翻转率。通过比较微分能谱方法和FOM方法,选取FOM方法估算了在不同高度和不同倾角下的单粒子翻转率。分析了质子单粒子翻转率与空间轨道的关系。提出了基于单粒子翻转率的器件可靠性指标。数值计算结果表明,在较低轨道高度和较小轨道倾角条件下,SRAM/MOS器件受单粒子翻转影响较小、可靠性较高。     

Monte Carlo predictions of proton SEE cross-sections from heavy ion test data

The limits of previous methods prompt us to design a new approach(named PRESTAGE) to predict proton single event effect(SEE) cross-sections using heavy-ion test data.To more realistically simulate the SEE mechanisms,we adopt Geant4 and a location-dependent strategy to describe the physics processes and the sensitivity of the device.Cross-sections predicted by PRESTAGE for over twenty devices are compared with the measured data.Evidence shows that PRESTAGE can calculate not only single event upsets induced by indirect proton ionization,but also direct ionization effects and single event latch-ups.Most of the PRESTAGE calculated results agree with the experimental data within a factor of 2-3.     

一种二进制降能器设计方法

为提升在中国原子能科学研究院的100 MeV质子回旋加速器上进行多能点质子单粒子效应实验的效率,针对该加速器提供的100 MeV质子设计了一种二进制降能器.降能器包括6片铝降能片,厚度分别为0.5,1,2,4,8,16,32 mm,即后一片厚度均为前一片的2倍.提出相对厚度的概念,此概念也可用来表示产生的质子能点的次序以及降能器的状态或操作.降能器产生的9.69 MeV以上的61个质子能点间隔在0.84—4.09 MeV之间,且能量岐离均在10%以下,散射角半高宽均在45 mrad以下,基本可满足质子单粒子效应实验的要求.对加速器直接提供的质子的能量精度对降能器产生的质子能点的影响进行分析,发现经降能器产生的质子能量越低,其影响也就越大.此外,降能器对加速器直接能够提供的70—100 MeV能区的质子也是适用的,且可通过增加降能片数量的方式来获得更加连续化的质子能点.本文提出的降能器设计方法简单有效,具有较强的借鉴价值.     

Geant4 simulation of proton-induced single event upset in three-dimensional die-stacked SRAM device

Geant4 Monte Carlo simulation results of the single event upset(SEU) induced by protons with energy ranging from0.3 MeV to 1 GeV are reported.The SEU cross section for planar and three-dimensional(3 D) die-stacked SRAM are calculated.The results show that the SEU cross sections of the planar device and the 3 D device are different from each other under low energy proton direct ionization mechanism,but almost the same for the high energy proton.Besides,the multi-bit upset(MBU) ratio and pattern are presented and analyzed.The results indicate that the MBU ratio of the 3 D die-stacked device is higher than that of the planar device,and the MBU patterns are more complicated.Finally,the onorbit upset rate for the 3 D die-stacked device and the planar device are calculated by SPACE RADIATION software.The calculation results indicate that no matter what the orbital parameters and shielding conditions are,the on-orbit upset rate of planar device is higher than that of 3 D die-stacked device.     

铁电存储器中高能质子引发的单粒子功能中断效应实验研究

利用中国原子能科学研究院的中高能质子实验平台,针对两款商用铁电存储器开展了中高能质子单粒子效应实验研究,发现其中一款器件在质子辐照下发生了单粒子翻转和单粒子功能中断.本文主要针对单粒子功能中断效应展开了后续实验研究.首先通过改变质子能量对器件进行辐照,发现单粒子功能中断截面随质子能量的提高而增加.为进一步研究器件发生单粒子功能中断的机理,利用激光微束平台开展了辅助实验,对铁电存储器的单粒子功能中断效应的敏感区域进行了定位,最后发现铁电存储器单粒子功能中断是由器件外围电路发生的微锁定导致的.