高能质子引起器件单粒子效应的研究方法

简略介绍了高能质子在半导体芯片中引起单粒子效应的实验测量和理论分析方法,包括核反应分析方法、半经验方法,介绍了质子和重离子翻转截面间的关系,并用重离子实验数据预测器件在质子环境下的翻转率. This article introduces briefly the experimental and theoretical methods that have been used to study high energy proton induced single event effect in semiconductor devices. The theoretical methods including nuclear reaction analysis method and semi empirical method are presented. The relationship of upset cross section between proton and heavy ions is described. Finally, on orbit proton upset rates are predicted by using the heavy ion test data.     

深亚微米SRAM质子单粒子翻转实验研究

宇航半导体器件运行在一个复杂的空间辐射环境中,质子是空间辐射环境中粒子的重要组成部分,因而质子在半导体器件中导致的辐射效应一直受到国内外的关注。利用兰州重离子加速器(Heavy Ion Research Facility In Lanzhou) 加速出的H2 分子打靶产生能量为10 MeV 的质子,研究了特征尺寸为0.5/0.35/0.15 μm体硅和绝缘体上硅(SOI) 工艺静态随机存储器(SRAM) 的质子单粒子翻转敏感性,这也是首次在该装置上开展的质子单粒子翻转实验研究。实验结果表明特征尺寸为亚微米的SOI 工艺SRAM器件对质子单粒子翻转不敏感,但随着器件特征尺寸的减小和工作电压的降低,SOI 工艺SRAM器件对质子单粒子翻转越来越敏感;特征尺寸为深亚微米的体硅工艺SRAM器件单粒子翻转截面随入射质子能量变化明显,存在发生翻转的质子能量阈值,CREME-MC模拟结果表明质子在深亚微米的体硅工艺SRAM器件中通过质子核反应导致单粒子翻转。Microelectronic devices are used in a harsh radiation environment for space missions. Among all the reliability issues concerned, proton induced single event upset (SEU) is becoming more and more noticeable for semiconductor components exposed on space. In this work, an experimental research of SEU induced by 10 MeV proton for static random access memory (SRAM) of 0.5, 0.35 and 0.15 m feature size is carried out on HeavyIon Research Facility in Lanzhou for the rst time. The experimental results show that proton induced SEUs in submicron and deep-submicron (SRAMs) are dominated by secondary ions generated by proton nuclear reaction events. The silicon-on-insulator SRAMs characters natural radiation-hardened SEU by proton. For the deep-submicron bulk-silicon technology SRAM, the proton SEU cross section is closely related to the proton energy and there is a threshold energy for the SEU occurrence by proton indirect ionization. CREME-MC simulation indicates that the SEU events in deep-submicron SRAM are induced by the proton nuclear reaction.     

重离子辐照带有ECC的65 nm SRAM器件“伪多位翻转”特性研究

为了提高纠错编码（ECC）的有效性,先进的静态随机存储器（SRAM）多采用位交错结构。但是,在没有物理版图信息的情况下,位交错设计使得从辐照测试数据中提取出多单元翻转（MCU）变得更加困难。运用Bi离子辐照带有ECC的65 nm SRAM器件,研究了该款器件在重离子辐照下的敏感性。为"伪多位翻转（FMBU）"以及MCU的数据分析提供了理论指导和帮助,完善了判别MCU的基本法则。除此之外,研究结果表明,ECC的汉明编码对于纳米器件的效果不够理想。在未来的空间应用中,需考虑更高层次的编码算法来抵抗单粒子翻转。In order to improve the robustness of error-correcting codes (ECC), modern static random access memory (SRAM) always use bit-interleaving structure. However, in the absence of physical layout information, the bit-interleaving design makes it more difficult to extract the multiple-cell upset (MCU) from the test data. In this paper, the sensitivity of Bi ion irradiation was investigated in a 65 nm technology SRAM with ECC. The experimental results provide a theoretical guidance and help for the fake multiple-bit upset (FMBU) and MCU data analyzing, which improve and perfect the basic rules extracting MCU from the test data. In addition, the results show that the performance of hamming encoding is not ideal in Nano scale SRAM. In the future of space applications, it is necessary to consider more advanced algorithms to against SEU.     

Geant4模拟δ电子对单粒子翻转的影响

利用Geant4蒙特卡洛程序包, 基于RPP (Rectangular ParallelePiped Volume)模型构建SRAM器件单元的灵敏体积, 编写了重离子在器件材料中的输运程序和单粒子翻转截面计算方法, 得到了简化器件结构的单粒子翻转截面σ与线性能量转移LET的关系曲线, 计算得到的翻转LET阈值和饱和截面与实验结果基本一致。模拟获得了LET值为99.69 MeV/(cm-2·mg)的Bi离子及LET值为69 MeV/(cm-2·mg)的Bi离子和Xe离子在器件材料中产生的δ电子分布图像,讨论了δ电子分布对翻转截面的影响。 计算了灵敏体积中能量沉积与δ电子分布的关系,认为δ电子分布对单粒子效应的影响随着器件的特征尺寸减小将更加严重。In this paper, the sensitive volume of SRAMs was constructed based on RPP(Rectangular ParallelePiped Volume) model using the Monte-Carlo code Geant4. The interactions of heavy ion with materials and the SEU(Single Event Upset) cross section calculation method were presented in the program. The SEU cross section curves with the linear energy deposition ware obtained. The SEU threshold value and saturation cross section were consistent with the testing data with heavy ions beam. The δ electrons distribution were different in the device material, which were generated by Bi ion with LETs of 99.67 MeV/(cm2·mg) and Bi ion, Xe ion with LETs of 69 MeV/(cm-2·mg). These results indicate δ electrons distribution impacts on the SEU cross section. According to the relation of energy deposition in the sensitive volume, the δ electrons distribution have more and more important effect on the Single Event Effect with reducing the feature size of semiconductor devices.     

用12C离子模拟质子引起的单粒子效应

在理论分析的基础上 ,提出了一种利用兰州重离子加速器提供的高能12C离子模拟质子引起单粒子效应的途径 .在保证核反应机制是引起单粒子效应主要机制的前提下,用高能12C离子可以模拟质子在功率金属 -氧化物 -半导体场效应晶体管中引起的单粒子烧毁以及单粒子栅极击穿 ,获得质子单粒子效应的饱和截面 ,定性研究质子单粒子效应的角度效应 ,还可以作为高能质子单粒子效应实验前的预备实验 .该方法拓展了兰州重离子加速器加速的轻的重离子在单粒子效应实验研究方面的应用 ,对现阶段国内开展质子单粒子效应实验研究具有重要意义. The mechanisms for proton and heavy ion induced single event effect (SEE) are discussed and a method to simulate proton induced SSEE (PSEE) with high energy 12 C is proposed in this paper. The experiments which can be done by using this method include single event burnout (SEB) and single event gate rupture in power MOSFET, single event upset (SEU) and single event transient (SET) in less sensitive device and angle effect. The experimets with high energy ...     

离子与生物分子相互作用的微观动力学理论

对X射线、γ射线、电子、中子、质子和重离子等对生物体系的辐照研究现状进行了评论。重离子辐照中特有的倒转深度剂量分布,即Bragg峰,成为放射治疗的理想工具。通过对重离子辐照生物组织物理过程的分析,提出了重离子与生物分子相互作用的三步物理过程,即核相互作用导致的核碎裂、库仑相互作用的电子激发和生物分子在周围环境相互作用下的弛豫,最终导致生物分子新结构的形成。由于物理过程是后期辐照化学过程、生物过程的基础,因此建立描述离子与生物分子相互作用物理过程的微观动力学理论是十分迫切的。The status of studying biology system therapy with X-rays, γ-rays, neutron, proton, and heavy ions is reviewed. The depth dose profile, called Bragg profile, makes heavy ion an ideal tool for radiotherapy. The physical process of therapy with heavy ions is analyzed and a 3-step interaction processes of heavy ions with biomolecules is proposed, that is, nuclear fragmentation in nuclear interaction, electron excitation in Coulomb interaction, and the biomolecules relaxation in surroundings, finally leads to a new structure of biomolecule. Since this physical process is the base of the following chemical process and biological process, a dynamical microscopic approach is strongly demanded to be built.     

利用HIRFL高能重离子束的核能材料辐照损伤研究

载能重离子与高能中子在材料中能够产生相似的级联碰撞损伤,加之重离子具有大的离位损伤截面和在材料样品中低的感生放射性,载能重离子束成为模拟先进核能装置内部结构材料辐照损伤的重要手段。HIRFL能区的重离子在结构材料中的射程一般远大于晶粒尺寸,因此能够产生材料体损伤,借助小样品技术可以获得材料力学性能变化（尤其辐照脆化）的有用信息,为探讨材料辐照损伤微结构和宏观力学性能变化的关联提供了重要条件。本文简要介绍了近年来我们基于HIRFL高能离子束开展的聚变堆候选材料辐照损伤的研究,包括低活化钢的辐照脆化行为、氧化物弥散强化（ODS）铁素体钢的结构优化对于抗辐照性能的影响、不同载能粒子辐照条件下铁素体/马氏体钢的辐照肿胀数据的关联,以及高能重离子辐照的钨材料中氢同位素的滞留行为。研究表明,结合特殊的测试技术及数据分析方法,高能重离子可作为核能结构材料辐照损伤研究及评估的有效手段。Because of the similarity in cascade damage structure in materials produced by energetic heavy ions and by fast neutrons, and the high displacement rate and low induced radioactivity of samples by heavy ions, heavy ion beam becomes an important tool to simulate radiation damage by energetic neutrons in materials in advanced nuclear energy systems. The ranges of heavy ions provided by HIRFL (Heavy Ion Research Facility in Lanzhou) are generally much larger than the mean dimensions of grains in alloys candidate to advanced nuclear reactors, and is capable of producing radiation damage in bulk scale. It therefore makes possible the evaluation of change of mechanical properties including the radiation induced embrittlement from the irradiated specimens by using miniaturized specimen techniques. In the present paper, we provide an introduction of our recent studies of radiation damage of materials candidate to future fusion reactors by utilizing heavy ion beams in HIRFL.The studies include issues as follows:ductility loss of RAFM steels causes by high-energy Ne ions, impact of oxide dispersoids on the radiation resistance of ODS ferritic steels, correlation of void swelling of ferritic/martensitic steels under different particle irradiation, and behavior of deuterium retention in tungsten under irradiation with high-energy heavy ions. The results show that high-energy heavy ions can be used as a tool to efficiently investigate or evaluate radiation damage in structure materials if combined with some special test techniques and data analysis.     

Parity Violating Electron Scattering in the Relativistic Eikonal Approximation

The parity violating electron scattering is investigated in the relativistic Eikonal approximation. The parity violating asymmetry parameters for many isotopes are calculated. In calculations the proton and neutron densities are obtained from the relativistic mean-field theory. We take Ni isotopes as examples to analyse the behaviour of the parity violating asymmetry parameters. The results show that the parity violating asymmetry parameter is sensitive to the difference between the proton and neutron densities. The amplitude of the parity violating asymmetry parameter increases with the distance between the minima of proton and neutron form factors. Our results are useful for future parity violating electron scattering experiments. By comparing our results with experimental data one can test the validity of the relativistic mean-field theory in calculating the neutron densities of nuclei.     

Understanding charge transfer of Li~+ and Na~+ ions scattered from metal surfaces with high work function

For Li~+ and Na~+ ions scattered from high work function metal surfaces, efficient neutralization is observed, and it cannot be explained by the conventional free electron model. In order to explain these experimental data, we investigate the velocity-dependent neutral fraction with the modified Brako–Newns(BN) model. The calculated results are in agreement with the experimental data. We find that the parallel velocity effect plays an important role in neutralizing the Li~+ and Na~+ ions for large angle scattering. The nonmonotonic velocity behavior of neutral fraction is strongly related to the distance-dependent coupling strength between the atomic level and metal states.     

Atomic Force Microscopy Measurement of DNA Fragment Induced by Heavy Ions

Choosing ^7 Li and ^12C heavy ions respectively with different linear energy transfer (LET) values, purified plasmid DNA samples in aqueous solution are irradiated with various doses. The atomic force microscopy (AFM) is used for analysis of DNA fragments induced by both the kinds of heavy ions. There is a change of three forms of DNA, i.e. supercoiled, open circular and linear form, as the dose is observed. The distribution function of DNA fragment length is obtained for the first time and fitted with the Tsallis entropy statistical theory. The result indicates that AFM is a useful tool for analysis of the short fragment of DNA, high-LET heavy ion radiation induces DNA double strand breaks (DSBs) more effectively, and the distributions of the DSBs are more local and dense in comparison with low-LET radiation.     

Comparison of the SPE model with proton and heavy ion data.

Proton data from the GOES 6 and 7 satellites and heavy ion data from the IMP-8 satellite have been compared to the expected results of Nymmik's new model for solar particle event fluences. This model calculates the energy spectra of ions for protons through nickel for solar particle events, based upon the observed proton integral fluence above 30 MeV. Based upon 27 observed proton events of solar cycle 22, and three large historical events, with integral fluences above 30 MeV of greater than 10(6) particles/cm2, a reasonable agreement with model predictions is seen for more than half of the events. However, several events show a marked departure from the model predictions, leading to the conclusion that there may exist more than a single class of event, or that it may be necessary to include additional parameters within the model, such as solar disk position of the source flare, or height of disturbance in the solar corona. Data for heavy ions, (oxygen and iron), were limited to a total of six solar particle events, of which only two occurred in solar cycle 22. The agreement between data and the model predictions appeared to be quite good, however this agreement was sensitively dependent upon the value taken for the proton fluence above 30 MeV.     

Radiation chemical yields for loss of ether and carbonate ester bonds in PADC films exposed to proton and heavy ion beams

Chemical modification along ion tracks in PADC films has been studied by means of FT-IR spectrometry, which was exposed to proton and heavy ions of He, C, Ne, Ar, Fe, Kr and Xe with energies around the Bragg peaks. This study covers a wide region of the stopping power ranging from 10 to 10,000 keV/μm. Removal cross sections for the loss of ether and carbonate ester bonds are assessed for each ion, as a function of the stopping power. Chemical damage parameters like the damage density, the effective track core radius and the radiation chemical yields, G values (scissions/100 eV), for each bond are also derived. We have found anomalous dependence of these parameters on the stopping power. The G value for the loss of carbonate ester bond decreased from 20 for proton down to 5 for C and Ne ions, and then increased with atomic number of heavy ions up to 8 for Xe ion. Radial dose distribution for each ion has been also calculated. Results are discussed from the viewpoint of polymeric structure of PADC that consists of two parts with different radio-sensitivities.     

Proton and light-ion acceleration to relativistic GeV energies by the superstrong laser radiation interacting with a structured plasma target

A new scheme is proposed for proton and light-ion acceleration to relativistic energies by superstrong laser radiation interacting with a structured plasma target. The proposal consists in the use of two-component targets consisting of heavy and light ions, where an ambipolar field is formed under the action of the ponderomotive force of incident radiation, and, in contrast to the traditional schemes, acceleration starts from the front boundary of the layer. It is shown that, for the optimized target parameters, monoenergetic GeV ion beams can be produced for radiation pulse intensities on the order of 10²¹−10²² W/cm².     

Radiation chemical yields for the losses of typical functional groups in PADC films for high energy protons registered as unetchable tracks

A series of FT-IR spectrometric studies has been performed to understand the latent track structure in poly(allyl diglycol carbonate), PADC, which were exposed to proton beams with energies of 20, 30 and 70 MeV. These energies are too high to register etchable tracks in PADC. Chemical damage parameters, such as damage density, effective track core radius and radiation chemical yields, for losses of ether bond, carbonate ester bond and CH groups in PADC are evaluated as a function of the stopping power, which were compared to the previous results for 5.7 MeV proton and heavy ions, between He and Xe. Graphs of the chemical damage parameters are given at the wide stopping powers ranging from 1 to 12,000 keV/μm. The decreasing behaviors of the ether and carbonate ester bonds are on the almost identical trends with those of the heavy ions. On the contrary to this, the reducing behavior of CH groups is similar to that of the gamma rays. Different dependence of the chemical damage parameters for the loss of CH groups is found on the stopping powers between the both sides of the detection threshold as an etched track detector.     

Acoustic effect of pulsed high-energy proton beams

Experimental data on the generation of acoustic radiation in solid targets by pulsed high-energy proton beams are outlined. The features of ultrasound generation in solids by beams of heavy charged particles are analyzed, and the possibility of using the acoustic effect of heavy charged particles to investigate the interaction between radiation and condensed media and to determine particle energies is shown.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 95–99, August, 1991.     

H+和Ar11+激发Si的K壳层X射线发射研究

测量了50–250 keV H⁺和1.0–3.0 MeV Ar¹¹⁺ 轰击Si表面过程中辐射的X射线. 结果表明, 在Ar¹¹⁺入射的情况下, 引起了Si的L壳层上3, 4个电子的多电离.计算了Si的K壳层X射线产生截面, 并将两体碰撞近似(BEA), 平面波恩近似, ECPSSR理论计算与实验值进行了对比. ECPSSR理论与质子产生的截面数据能够很好地符合; 而考虑多电离后, BEA理论与Ar¹¹⁺的实验结果符合较好. 关键词： X射线 高电荷态重离子 多电离     

面向空间高能重离子与辐射屏蔽材料的反应截面地基研究

空间辐射尤其是高能重离子辐射可造成生物机体的严重损伤, 所以对高能重离子进行恰当的辐射屏蔽, 成为实现载人航天的关键性因素之一。 研究表明, 由于高能重离子与不同屏蔽材料发生相互作用, 所产生的核碎片等次级粒子, 直接影响空间辐射屏蔽材料的屏蔽性能研究和屏蔽结构设计。 介绍了太空辐射的分类与组成, 综述了国际地基辐射屏蔽材料与实验现状。 根据文献中的地基实验数据, 重点描述了被动式屏蔽方法: 以相近能量多种重离子, 不同能量的56Fe和28Si重离子分别与C, H, Al和Cu材料相互作用的总反应截面和碎片产生截面, 并结合510 MeV/u 56Fe与不同厚度CH2相互作用产生的碎片通量分布、 碎片平均LET分布和不同厚度CH2的单位入射离子剂量减少量等方面, 系统讨论分析了C, H, Al, Cu和CH2等常用空间辐射屏蔽材料的屏蔽性能。 Cosmic radiation, particularly the high energy heavy ion radiation, may cause serious injury on living organism. Therefore, it is one of critical restriction factor in Manned Spaceflight. Studies show that high energy heavy ions interacting with the shielding materials can produce numerous kinds of fragments and secondaries. These particles have a direct impact on evaluation of shielding properties of different shielding materials, the optimal shielding structure design and low dose evaluation after shielding materials. From perspectives of divisions of cosmic rays and passive shielding methods, this paper introduces the ground based research of shielding materials. The passive shielding method was discussed, based on the experimental data of the total cross sections and fragment（production） cross sections of the aspects of different heavy ions with approximately same energy and 56Fe, 28Si heavy ions with different energies on H, C, CH2, Al and Cu radiation shielding materials. In addition, the fragment fluency distribution, the average LET distribution and the dose reduction per particle of 510 MeV/u 56Fe in different depth of CH2 material were also discussed.     

高能质子单粒子翻转效应的模拟计算

在分析质子与硅反应的基础上,提出质子单粒子翻转截面理论计算模型,建立了模拟计算方法.计算得到了不同能量的高能质子在存储单元的灵敏区内沉积的能量.指出高能质子主要通过与硅反应产生的重离子在存储单元灵敏区内沉积能量,产生电荷,导致单粒子效应,得到了单粒子翻转截面与质子能量以及随临界电荷变化的关系.并将计算得到的单粒子翻转截面与实验数据进行了比较.