Strategy to mitigate single event upset in 14-nm CMOS bulk FinFET technology

Three-dimensional (3D) TCAD simulations demonstrate that reducing the distance between the well boundary and N-channel metal-oxide semiconductor (NMOS) transistor or P-channel metal-oxide semiconductor (PMOS) transistor can mitigate the cross section of single event upset (SEU) in 14-nm complementary metal-oxide semiconductor (CMOS) bulk FinFET technology. The competition of charge collection between well boundary and sensitive nodes, the enhanced restoring currents and the change of bipolar effect are responsible for the decrease of SEU cross section. Unlike dual-interlock cell (DICE) design, this approach is more effective under heavy ion irradiation of higher LET, in the presence of enough taps to ensure the rapid recovery of well potential. Besides, the feasibility of this method and its effectiveness with feature size scaling down are discussed.     

一种改进的SRAM单粒子效应检测系统

中国科学院近代物理研究所材料研究中心开展了对静态随机存储器(Static Random Access Memory,SRAM)单粒子效应(Single Event Effects,SEEs)的深入研究。材料中心目前拥有的两套SRAM单粒子检测系统各自具有一定的局限性,所以又提出了一种改进的SRAM SEE检测方法,并研制了相关电路。该检测系统在兰州重离子研究装置(HIRFL)提供的束流辐射终端上进行了多次实验,获得了一批实验数据。其中包括129Xe束流辐照条件下,对65 nm SRAM单粒子翻转的研究;12C束流辐照条件下,对65,130和150 nm商用错误纠正编码加固SRAM SEE的研究;129Xe束流辐照条件下,对普通商用SRAM单粒子锁定的研究等。实验验证了该检测系统的有效性和可靠性,为开展SRAM SEE的研究提供了重要的检测平台,并为以后开展更复杂器件SEE的研究提供了实验经验和技术基础。     

各向异性静态随机存储器中的多位翻转分析研究

重离子实验结果表明,具有高线性能量转移(LET)或大角度入射的快重离子导致静态随机存储器(SRAM)中的多位翻转(MBU)比例增大,甚至超过单位翻转比例。单个离子径迹中的电荷可以沿着径向扩散数个微米,被临近的灵敏区收集后引起MBU。器件灵敏区的各向异性空间布局与离子入射方向共同影响测试器件的MBU图形特征。位线接触点的纵向隔离导致横向型成为主要的两位翻转图形;"L"型和"田"型分别是主要的三位翻转和四位翻转图形。最后,对SRAM抗MBU加固设计和实验验证方法进行了讨论。     

不同变质程度煤尘爆炸压力特性变化规律实验研究

为研究不同变质程度煤尘爆炸压力特性变化规律，以最大压力p_max和最大压力上升速率(dp/dt)_max表征压力特性，使用近球形煤尘爆炸装置对褐煤、长焰煤、不黏煤和气煤的爆炸压力特性变化规律展开分析。研究发现:在4种煤尘样品中，褐煤的p_max和(dp/dt)_max均最大，分别达0.71 MPa和65.69 MPa/s。随变质程度增大，长焰煤、不黏煤和气煤的p_max和(dp/dt)_max均明显减小，说明以爆炸压力特性为标准，4种煤尘爆炸强度由高到低依次是褐煤、长焰煤、不黏煤和气煤。通过对比爆炸前后煤尘挥发分含量，得出参与爆炸的挥发分含量所占质量分数为46.28%～68.19%。在喷尘压力p₀=2.0 MPa，点火延迟时间t₀=100 ms时，4种煤尘p_max值均达最大，分别为0.71、0.60、0.55和0.47 MPa。褐煤、不黏煤和气煤在p₀=2.0 MPa，t₀=80 ms时(dp/dt)_max达最大，而长焰煤则在p₀=2.0 MPa，t₀=100 ms时(dp/dt)_max达到最大。     

Modeling and assessing the influence of linear energy transfer on multiple bit upset susceptibility

The influence of the metric of linear energy transfer （LET） on single event upset （SEU）, particularly multiple bit upset （MBU） in a hypothetical 90-nm static random access memory （SRAM） is explored. To explain the odd point of higher LET incident ion but induced lower cross section in the curve of SEU cross section, MBUs induced by incident ions 132Xe and 2~9Bi with the same LET but different energies at oblique incidence are investigated using multi-functional package for single event effect analysis （MUFPSA）. In addition, a comprehensive analytical model of the radial track structure is incorporated into MUFPSA, which is a complementation for assessing and interpreting MBU susceptibility of SRAM. The results show that （i） with the increase of incident angle, MBU multiplicity and probability each present an increasing trend; （ii） due to the higher ion relative velocity and longer range of ~ electrons, higher energy ions trigger the MBU with less probability than lower energy ions.     

Influences of total ionizing dose on single event effect sensitivity in floating gate cells

The influences of total ionizing dose(TID) on the single event effect(SEE) sensitivity of 34-nm and 25-nm NAND flash memories are investigated in this paper. The increase in the cross section of heavy-ion single event upset(SEU) in memories that have ever been exposed to TID is observed, which is attributed to the combination of the threshold voltage shifts induced by γ-rays and heavy ions. Retention errors in floating gate(FG) cells after heavy ion irradiation are observed.Moreover, the cross section of retention error increases if the memory has ever been exposed to TID. This effect is more evident at a low linear energy transfer(LET) value. The underlying mechanism is identified as the combination of the defects induced by γ-rays and heavy ions, which increases the possibility to constitute a multi-trap assisted tunneling(mTAT) path across the tunnel oxide.     

基于量纲分析理论的煤尘爆炸能量预测模型

为预测煤尘爆炸能量,基于量纲分析理论建立煤尘爆炸能量预测模型。选取爆炸能量E、空气密度ρ和大气压强p的量纲为导出量纲。根据量纲分析Π定理得出含有待定参数λ的具有普适性的能量预测模型。通过小型煤尘爆炸性实验设计,测定10次爆炸最长火焰长度平均值l₀、10次最长火焰长度出现时间平均值t₀与该小型煤尘爆炸中释放能量E₀,确定模型中参数λ为0.467。对模型变量t、E、l的函数关系进行合理性检验。通过实测的15组不同时刻的火焰长度进行模型变量t、l幂指关系检验。检验结果表明:量纲选取完备,预测模型科学合理。     

Investigation of flux dependent sensitivity on single event effect in memory devices

Heavy-ion flux is an important experimental parameter in the ground based single event tests. The flux impact on a single event effect in different memory devices is analyzed by using GEANT4 and TCAD simulation methods. The transient radial track profile depends not only on the linear energy transfer(LET) of the incident ion, but also on the mass and energy of the ion. For the ions with the energies at the Bragg peaks, the radial charge distribution is wider when the ion LET is larger. The results extracted from the GEANT4 and TCAD simulations, together with detailed analysis of the device structure, are presented to demonstrate phenomena observed in the flux related experiment. The analysis shows that the flux effect conclusions drawn from the experiment are intrinsically connected and all indicate the mechanism that the flux effect stems from multiple ion-induced pulses functioning together and relies exquisitely on the specific response of the device.     

Simulation of temporal characteristics of ion-velocity susceptibility to single event upset effect

Using a Monte Carlo simulation tool of the multi-functional package for SEEs Analysis(MUFPSA), we study the temporal characteristics of ion-velocity susceptibility to the single event upset(SEU) effect, including the deposited energy,traversed time within the device, and profile of the current pulse. The results show that the averaged dposited energy decreases with the increase of the ion-velocity, and incident ions of209 Bi have a wider distribution of energy deposition than132 Xe at the same ion-velocity. Additionally, the traversed time presents an obvious decreasing trend with the increase of ion-velocity. Concurrently, ion-velocity certainly has an influence on the current pulse and then it presents a particular regularity. The detailed discussion is conducted to estimate the relevant linear energy transfer(LET) of incident ions and the SEU cross section of the testing device from experiment and simulation and to critically consider the metric of LET.     

煤尘层最低着火温度变化规律实验研究

为研究煤尘层最低着火温度随煤样变质程度、煤尘粒径及煤尘层厚度的变化规律,采用煤尘层最低着火温度测定系统进行实验研究,结果表明:随着煤样由褐煤到无烟煤变质程度逐渐增大,煤尘层最低着火温度由290℃上升到400℃以上,同时,褐煤、长焰煤、不粘煤、气煤煤尘层着火时观察到明显的火焰。随着煤尘粒径不断减小,不同煤质的煤尘层最低着火温度明显减小,煤尘层厚度为15mm时,随着煤尘粒径由0.5mm减小至0.075mm,不同煤质煤尘层最低着火温度分别减小了31.0%、26.7%、28.1%、25.8%、28.6%、27.8%、18.9%和15.0%,煤尘粒径影响作用十分显著。随着煤尘层厚度的增大,不同煤质在不同粒径下的煤尘层最低着火温度都减小,其中无烟煤的变化最不明显。