铁电存储器中高能质子引发的单粒子功能中断效应实验研究

利用中国原子能科学研究院的中高能质子实验平台，针对两款商用铁电存储器开展了中高能质子单粒子效应实验研究，发现其中一款器件在质子辐照下发生了单粒子翻转和单粒子功能中断.本文主要针对单粒子功能中断效应展开了后续实验研究.首先通过改变质子能量对器件进行辐照，发现单粒子功能中断截面随质子能量的提高而增加.为进一步研究器件发生单粒子功能中断的机理，利用激光微束平台开展了辅助实验，对铁电存储器的单粒子功能中断效应的敏感区域进行了定位，最后发现铁电存储器单粒子功能中断是由器件外围电路发生的微锁定导致的.     

Angular dependence of proton-induced single event transient in silicon-germanium heterojunction bipolar transistors

We investigate the angular dependence of proton-induced single event transient (SET) in silicon-germanium heterojunction bipolar transistors. Experimental results show that the overall SET cross section is almost independent of proton incident angle. However, the proportion of SET events with long duration and high integral charge collection grows significantly with the increasing angle. Monte Carlo simulations demonstrate that the integral cross section of proton incident events with high ionizing energy deposition in the sensitive volume tends to be higher at larger incident angles, which is associated with the angular distribution of proton-induced secondary particles and the geometry of sensitive volume.