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1.
The effect of dislocations on the thermodynamic properties of Ta single crystal under high pressure by molecular dynamics simulation 下载免费PDF全文
The thermodynamic properties of Ta metal under high pressure are studied by molecular dynamics simulation. For dislocation-free Ta crystal, all the thermodynamic properties considered are in good agreement with the results from experiments or higher level calculations. If dislocations are included in the Ta crystal, it is found that as the dislocation density increases, the hydrostatic pressure at the phase transition point of bcc→hcp and hcp→fcc decreases, while the Hugoniot temperature increases. Meanwhile, the impact pressure at the elastic–plastic transition point is found to depend on the crystallographic orientation of the pressure. As the dislocation density increases, the pressure of the elastic–plastic transition point decreases rapidly at the initial stage, then gradually decreases with the increase of the dislocation density. 相似文献
2.
重离子实验结果表明,具有高线性能量转移(LET)或大角度入射的快重离子导致静态随机存储器(SRAM)中的多位翻转(MBU)比例增大,甚至超过单位翻转比例。单个离子径迹中的电荷可以沿着径向扩散数个微米,被临近的灵敏区收集后引起MBU。器件灵敏区的各向异性空间布局与离子入射方向共同影响测试器件的MBU图形特征。位线接触点的纵向隔离导致横向型成为主要的两位翻转图形;"L"型和"田"型分别是主要的三位翻转和四位翻转图形。最后,对SRAM抗MBU加固设计和实验验证方法进行了讨论。 相似文献
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对用电化学方法制备Si大孔阵列管坑工艺进行了初步探索。 通过对Si在KOH溶液中各向异性湿法蚀刻和在HF酸溶液中的电化学蚀刻过程中各种参数的摸索, 确定在室温下制备大孔阵列的最佳配比浓度, 蚀刻出符合要求的管坑阵列, 为进一步制备结构化闪烁屏奠定了实验基础。 The 3 D structures in silicon are increasingly coming to use in many fields. For example, the high resolution X ray digital imaging detector can be made by coupling CCD and the scintillating screen which is made by the array trenches filled with CsI(Tl). In the present work, we explored the technology of etching micro array on the n type silicon with high resistance. By studying the relative parameters of anisotropic etching of KOH and electro chemical etching of HF, the optimized concentration of HF was determined and the micro pore array trenches with 200 μm in depth were realized. The results establish an experimental base for further fabrication of the scintillating screen. 相似文献
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Angular dependence of multiple-bit upset response in static random access memories under heavy ion irradiation 下载免费PDF全文
Experimental evidence is presented relevant to the angular dependences of multiple-bit upset (MBU) rates and patterns in static random access memories (SRAMs) under heavy ion irradiation. The single event upset (SEU) cross sections under tilted ion strikes are overestimated by 23.9% 84.6%, compared with under normally incident ion with the equivalent linear energy transfer (LET) value of ~ 41 MeV/(mg/cm 2 ), which can be partially explained by the fact that the MBU rate for tilted ions of 30 is 8.5%-9.8% higher than for normally incident ions. While at a lower LET of ~ 9.5 MeV/(mg/cm 2 ), no clear discrepancy is observed. Moreover, since the ion trajectories at normal and tilted incidences are different, the predominant double-bit upset (DBU) patterns measured are different in both conditions. Those differences depend on the LET values of heavy ions and devices under test. Thus, effective LET method should be used carefully in ground-based testing of single event effects (SEE) sensitivity, especially in MBU-sensitive devices. 相似文献
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通过25MeV/u86Kr离子辐照叠层结晶聚对苯二甲酸乙二醇酯膜(PET),在不同的电子能损(3.407.25keV/nm)和离子注量(5×10113×1012ions/cm2)辐照条件下,对Kr离子在PET中引起的辐照损伤效应进行了研究。借助傅里叶变换红外光谱分析,通过对样品的红外吸收峰进行扣除基底后的Lorentz拟合,分析了与主要官能团对应的吸收峰强度的变化趋势,研究了化学结构与组分在重离子辐照下的变化规律;利用X射线衍射光谱仪测量,研究了Kr离子在PET潜径迹中引起的非晶化过程,并通过对吸光度和非晶化强度随离子注量的指数衰减规律的分析,获得了不同电子能损离子辐照PET时主要官能团的损伤截面和非晶化截面及对应的潜径迹半径。 相似文献
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利用快重离子辐照的单晶白云母片产生潜径迹,蚀刻得到直径在30—180 nm纳米孔道. 孔道形状依赖于蚀刻时间,蚀刻时间短得到圆柱形孔道,蚀刻时间长得到菱柱形孔道. 从而在云母模板孔道中电化学沉积得到不同直径和形状的Cu纳米线. 通过紫外可见光谱分析,发现铜纳米线的尺寸和形状影响其光学性质. 直径小于60 nm的近似为圆柱状Cu纳米线有一个明显的表面等离子体共振峰和一个微弱的次峰. 随着直径增加,菱柱状的Cu纳米线主峰有明显的红移,次峰逐渐增强. 同时利用扫描电子显微镜、X射线衍射对Cu纳米线的形貌和晶体结构特征进行了表征.
关键词:
Cu纳米线
电化学沉积
光学性质
云母模板 相似文献
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锌铝类水滑石的复原及表征(英) 总被引:7,自引:0,他引:7
本文采用焙烧复原法,在70 ℃以80%的乙醇溶液为分散介质,有机酸阴离子与煅烧后的锌铝类水滑石的物质的量之比为1∶9的条件下,实现了苯甲酸及苯二甲酸异构阴离子与锌铝类水滑石的插层反应,同时,还进行了等物质的量的两种酸与锌铝类水滑石(1∶1∶9)的插层反应。利用XRD和IR测试技术对样品结构进行表征,UV及HPLC对有机酸的反应量进行定量,并采用Gaussian-98软件包中ab initio分子轨道法(HF/6-31G)计算了各有机酸阴离子的分子结构,分析了其结构与插层行为的关系,并理论结合实验给出了各有机酸阴离子在锌铝类水滑石层间可能的空间构型。研究结果表明,苯甲酸及苯二甲酸异构阴离子在插层过程中表现出选择性,其优先进入锌铝类水滑石层间的顺序是:对苯二甲酸>邻苯二甲酸>间苯二甲酸>苯甲酸,且锌铝类水滑石对对苯二甲酸表现出较高的选择性,是环境友好的分离方法。 相似文献
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重离子辐照的高分子有机膜,经过适当的处理,可以作为模板制备金属和可溶性盐纳米线,此方法称为离子径迹模板法。介绍了用电化学沉积方法和过饱和溶液法制备金属纳米线和可溶性盐纳米线的基本原理和制各实例,同时还展望了离子径迹模板法制备纳米线的一些可能的应用。The polymer foils irradiated by heavy ions can be used as temptates to prepai nanowires and some inorganic salt nanowires. It is called "ion-track template method". Compared to other templates, such as AAO template and porous silicon, etched ion-track template is more convenient and flexible. The density of the pores can be easily controlled by changing the ion fluences and the diameter of the pores can be altered through changing the etching condition. The pores of the etched ion-track template are well aligned. We present some examples of preparing metallic nanowires and inorganic salt wires by electrochemical deposition and by supersaturation solution method, respectively. We also introduce some applications of nanowires prepared with ion-track template method. 相似文献
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利用0.97 GeV的209Bi离子辐照二硫化钼(MoS2)晶体,辐照注量范围为1×1010~1×1012 ions/cm2,结合原子力显微镜(AFM)观测和Raman光谱分析研究了快重离子辐照对MoS2热导率的影响。实验结果显示,快重离子辐照在MoS2中产生了潜径迹,较高激光功率下的Raman测试使样品局部温度升高,导致E1/2g和A1g峰随注量增加向低波数方向移动,且峰形展宽。引入了通过改变激光功率测量Raman光谱得到MoS2热导率的计算方法,获得了不同辐照注量下MoS2的热导率的定量分析结果,随注量增加,热导率不断降低,从未辐照样品的563 W/mK下降到1×1012 ions/cm2辐照时的132 W/mK。Molybdenum disulphide (MoS2) was irradiated by 0.97 GeV 209Bi ions with the fluence of 1×1010 to 1×1012 ions/cm2. The irradiation effect on the thermal conductivity of MoS2 was analyzed by atomic force microscope (AFM) and Raman spectroscopy. The experimental results show that hillock-like latent tracks are observed on irradiated MoS2 by AFM. The measurement of MoS2 by Raman spectrometer with high laser power results in the increase of local temperature of MoS2, which cause the downshift of peaks position and broadening of E1/2g and A1g peak. Furthermore, according to Raman spectra measured at different laser power, thermal conductivity of MoS2 before and after irradiation was calculated, which show that the thermal conductivity of MoS2 decreases with increasing fluence, from 563 to 132 W/mK for pristine and 1×1012 ions/cm2 irradiated MoS2, respectively. 相似文献