质子与金属布线层核反应对微纳级静态随机存储器单粒子效应的影响分析

金属布线层对微纳级静态随机存储器(static random access memory, SRAM) 质子单粒子效应敏感性的影响值得关注. 利用Geant4针对不同能量(30 MeV, 100 MeV, 200 MeV和500 MeV)的质子与微纳级SRAM器件的核反应过程开展计算, 研究了核反应次级粒子的种类、线性能量传输值(linear energy transfer, LET)及射程情况, 尤其对高LET 值的核反应次级粒子及其射程开展了详细分析. 研究表明, 金属布线层的存在和质子能量的增大为原子序数大于或等于30的重核次级粒子的产生创造了条件, 器件体硅区中原子序数大于60的重核离子来源于质子与钨材料的核反应, 核反应过程中的特殊作用机理会生成原子序数在30至50之间的次级粒子, 且质子能量的增大有助于这种作用机理的发生, 原子序数在30至50之间的次级粒子在器件体硅区的LET值最大约为37 MeV·cm²/mg, 相应射程可达到几微米, 对于阱深在微米量级的微纳级SRAM器件而言, 有引发单粒子闩锁的可能. 研究结果为空间辐射环境中宇航器件的质子单粒子效应研究提供理论支撑.     

铁电存储器中高能质子引发的单粒子功能中断效应实验研究

利用中国原子能科学研究院的中高能质子实验平台，针对两款商用铁电存储器开展了中高能质子单粒子效应实验研究，发现其中一款器件在质子辐照下发生了单粒子翻转和单粒子功能中断.本文主要针对单粒子功能中断效应展开了后续实验研究.首先通过改变质子能量对器件进行辐照，发现单粒子功能中断截面随质子能量的提高而增加.为进一步研究器件发生单粒子功能中断的机理，利用激光微束平台开展了辅助实验，对铁电存储器的单粒子功能中断效应的敏感区域进行了定位，最后发现铁电存储器单粒子功能中断是由器件外围电路发生的微锁定导致的.     

First principles simulation technique for characterizing single event effects

This paper develops a new simulation technique to characterize single event effects on semiconductor devices. The technique used to calculate the single event effects is developed according to the physical interaction mechanism of a single event effect. An application of the first principles simulation technique is performed to predict the ground-test single event upset effect on field-programmable gate arrays based on 0.25 μm advanced complementary metal-oxide-semiconductor technology. The agreement between the single event upset cross section accessed from a broad-beam heavy ion experiment and simulation shows that the simulation technique could be used to characterize the single event effects induced by heavy ions on a semiconductor device.     

强脉冲X射线辐照在Si-SiO2中感生的界面态及退火消除

 利用强脉冲X射线对Si-SiO₂界面进行了辐照，测量了界面态曲线和退火曲线。实验显示，经过强脉冲X射线对Si-SiO₂界面进行的辐照，在Si-SiO₂界面感生出新的界面态，感生界面态的增加与辐照剂量成正比，并且易出现饱和现象。总结出了感生界面态密度产额Dit随辐照剂量D变化的分布式，并定性分析了Dit随D变化的行为。随后进行的退火实验表明，强脉冲X射线辐照感生出的界面态越多，退火时这些界面态就消除得越快。退火过程显示有滞后现象，即辐照剂量大的阈电压漂移，在退火后恢复的绝对值，要小于辐照剂量小的阈电压漂移。导出了阈电压漂移随退火时间变化的关系，定性解释了滞后现象。     

同步动态随机存储器辐射效应测试系统研制

在分析同步动态随机存储器(SDRAM)辐射效应主要失效现象的基础上,研制了具备了读写功能测试、刷新周期测试及功耗电流测试三种功能的SDRAM辐射效应在线测试系统,并开展了SDRAM的总剂量效应实验研究。结果表明,总剂量效应会导致SDRAM器件的数据保持时间不断减小,功耗电流不断增大以及读写功能失效。实验样品MT48LC8M32B2的功能失效主要由外围控制电路造成,而非存储单元翻转。数据保持时间虽然随着辐照剂量的累积不断减小,但不是造成该器件功能失效的直接原因。     

Dependence of single event upsets sensitivity of low energy proton on test factors in 65 nm SRAM

In order to accurately predict the single event upsets(SEU) rate of on-orbit proton, the influence of the proton energy distribution, incident angle, supply voltage, and test pattern on the height, width, and position of SEU peak of low energy protons(LEP) in 65 nm static random access memory(SRAM) are quantitatively evaluated and analyzed based on LEP testing data and Monte Carlo simulation. The results show that different initial proton energies used to degrade the beam energy will bring about the difference in the energy distribution of average proton energy at the surface and sensitive region of the device under test(DUT), which further leads to significant differences including the height of SEU peak and the threshold energy of SEU. Using the lowest initial proton energy is extremely important for SEU testing with low energy protons. The proton energy corresponding to the SEU peak shifts to higher average proton energies with the increase of the tilt angle, and the SEU peaks also increase significantly. The reduction of supply voltage lowers the critical charge of SEU, leading to the increase of LEP SEU cross section. For standard 6-transitor SRAM with bit-interleaving technology,SEU peak does not show clear dependence on three test patterns of logical checkerboard 55 H, all "1", and all "0". It should be noted that all the SEUs in 65 nm SRAM are single cell upset in LEP testing due to proton's low linear energy transfer(LET) value.     

纳米静态随机存储器低能质子单粒子翻转敏感性研究

针对65, 90, 250 nm三种不同特征尺寸的静态随机存储器基于国内和国外质子加速器试验平台, 获取了从低能到高能完整的质子单粒子翻转截面曲线. 试验结果表明, 对于纳米器件1 MeV以下低能质子所引起的单粒子翻转截面比高能质子单粒子翻转饱和截面最高可达3个数量级. 采用基于试验数据和器件信息相结合的方法, 构建了较为精确的复合灵敏体积几何结构模型, 在此基础上采用蒙特卡罗方法揭示了低能质子穿过多层金属布线层, 由于能量岐离使展宽能谱处于布拉格峰值的附近, 通过直接电离方式将能量集中沉积在灵敏体积内, 是导致单粒子翻转截面峰值的根本原因. 并针对某一轨道环境预估了低能质子对空间质子单粒子翻转率的贡献.     

直接数字式频率合成器单粒子效应实验研究

在直接数字式频率合成器(DDS)单粒子效应失效现象的基础上,研制了具备寄存器读写、功耗电流测试和输出效应波形捕获功能的DDS辐射效应在线测试系统,开展了DDS单粒子效应实验研究。结果表明,单粒子效应会导致DDS输出波形扰动,波形功能中断,功耗电流陡然增大。分析认为:DDS内部PLL模块发生单粒子瞬态和单粒子翻转,是引发波形扰动的主要原因;内置DAC的主要功能寄存器翻转引发了输出波形功能中断;电流增大是单粒子闭锁引起的。本项研究为国产DDS器件的加固和考核提供了一定的参考。     

Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation

Nitrogen plasma passivation （NPP） on （111） germanium （Ge） was studied in terms of the interface trap density, roughness, and interfacial layer thickness using plasma-enhanced chemical vapor deposition （PECVD）. The results show that NPP not only reduces the interface states, but also improves the surface roughness of Ge, which is beneficial for suppressing the channel scattering at both low and high field regions of Ge MOSFETs. However, the interracial layer thickness is also increased by the NPP treatment, which will impact the equivalent oxide thickness （EOT） scaling and thus degrade the device performance gain from the improvement of the surface morphology and the interface passivation. To obtain better device performance of Ge MOSFETs, suppressing the interfacial layer regrowth as well as a trade-off with reducing the interface states and roughness should be considered carefully when using the NPP process.     

质子和中子在硅中位移损伤等效性计算

基于蒙特卡罗软件Geant4,探讨质子与硅的库仑散射和核反应及中子与硅的核反应产生反冲原子沉积非电离能量的过程,建立质子和中子在硅中的非电离能量阻止本领计算方法。在此方法中,描述了原子间库仑散射的物理过程,模拟带电粒子与晶格原子之间的屏蔽库仑散射。计算得到不同能量质子和中子在硅中因库仑散射和核反应产生反冲原子的非电离能量沉积及阻止本领的等效性,计算结果与中子ASTM标准及文献计算得到的质子数据符合很好。