用重离子实验数据推算质子翻转截面和轨道翻转率

空间单粒子辐射环境主要由重离子和高能质子构成,但在地面利用两种离子评估器件单粒子效应敏感度成本太高,因此利用重离子实验数据推算质子敏感参数成为一个非常活跃的研究课题.利用Barak经验公式,在重离子实验获得器件的σ LET值曲线的基础上,计算了几种典型器件在不同能量下的质子翻转截面以及典型轨道上质子引起的翻转率,并同FOM方法预示的质子翻转率进行了比较,其结果将对卫星电子系统抗辐射加固设计具有重要参考价值. The radiation environments concerned with single event upset mainly consist of heavy ions from cosmic ray and large flux proton from solar events and planetary radiation belts. The most reliable calculation for SEE rate induced by proton and henvy ions are the way to use the experimentally measured data rospectively. But it is too expensive to test devices with both heavy ions and protons. So it is necessary to derive models for predicting proton cross sections and rates from heavy ion test data....     

推广的液滴模型及其应用

简单介绍了近年来在研究重核和超重核衰变性质及熔合反应方面取得的理论成果和面临的挑战,着重阐述推广的液滴模型(GLDM) 理论框架及其应用。基于原子核的质量数、质子数以及反应Q 值,GLDM考虑了质量和电荷的不对称性、形状演化、亲近势和温度等,很好地描述了重核和超重核的质子放射性、 衰变、重离子放射性、自发裂变的半衰期和重离子熔合反应截面,同时也研究了原子核的粒子(质子、 、重离子) 放射性与自发裂变的竞争。Recent theoretical achievements and challenges about the fusion and decay properties of heavy and superheavy nuclei are generally introduced. Especially, the Generalized Liquid Drop Model(GLDM) as well as its application are emphatically described. Based on the mass number, proton number and the reaction Q value, the GLDM has taken the mass and charge asymmetry, the shape evolution, the proximity potential, as well as the temperature of nucleus into account, well described the proton radioactivity, the decay, the heavy particle radioactivity, the half life of spontaneous fission of heavy nuclei and superheavy nuclei, and the cross-sections of heavy ion fusion. The competitions between the spontaneous fission and other decay modes such as proton and heavy particle radioactivity, the alpha decay, and so on are also studied.     

用12C离子模拟质子引起的单粒子效应

在理论分析的基础上 ,提出了一种利用兰州重离子加速器提供的高能12C离子模拟质子引起单粒子效应的途径 .在保证核反应机制是引起单粒子效应主要机制的前提下,用高能12C离子可以模拟质子在功率金属 -氧化物 -半导体场效应晶体管中引起的单粒子烧毁以及单粒子栅极击穿 ,获得质子单粒子效应的饱和截面 ,定性研究质子单粒子效应的角度效应 ,还可以作为高能质子单粒子效应实验前的预备实验 .该方法拓展了兰州重离子加速器加速的轻的重离子在单粒子效应实验研究方面的应用 ,对现阶段国内开展质子单粒子效应实验研究具有重要意义. The mechanisms for proton and heavy ion induced single event effect (SEE) are discussed and a method to simulate proton induced SSEE (PSEE) with high energy 12 C is proposed in this paper. The experiments which can be done by using this method include single event burnout (SEB) and single event gate rupture in power MOSFET, single event upset (SEU) and single event transient (SET) in less sensitive device and angle effect. The experimets with high energy ...     

深亚微米SRAM质子单粒子翻转实验研究

宇航半导体器件运行在一个复杂的空间辐射环境中,质子是空间辐射环境中粒子的重要组成部分,因而质子在半导体器件中导致的辐射效应一直受到国内外的关注。利用兰州重离子加速器(Heavy Ion Research Facility In Lanzhou) 加速出的H2 分子打靶产生能量为10 MeV 的质子,研究了特征尺寸为0.5/0.35/0.15 μm体硅和绝缘体上硅(SOI) 工艺静态随机存储器(SRAM) 的质子单粒子翻转敏感性,这也是首次在该装置上开展的质子单粒子翻转实验研究。实验结果表明特征尺寸为亚微米的SOI 工艺SRAM器件对质子单粒子翻转不敏感,但随着器件特征尺寸的减小和工作电压的降低,SOI 工艺SRAM器件对质子单粒子翻转越来越敏感;特征尺寸为深亚微米的体硅工艺SRAM器件单粒子翻转截面随入射质子能量变化明显,存在发生翻转的质子能量阈值,CREME-MC模拟结果表明质子在深亚微米的体硅工艺SRAM器件中通过质子核反应导致单粒子翻转。Microelectronic devices are used in a harsh radiation environment for space missions. Among all the reliability issues concerned, proton induced single event upset (SEU) is becoming more and more noticeable for semiconductor components exposed on space. In this work, an experimental research of SEU induced by 10 MeV proton for static random access memory (SRAM) of 0.5, 0.35 and 0.15 m feature size is carried out on HeavyIon Research Facility in Lanzhou for the rst time. The experimental results show that proton induced SEUs in submicron and deep-submicron (SRAMs) are dominated by secondary ions generated by proton nuclear reaction events. The silicon-on-insulator SRAMs characters natural radiation-hardened SEU by proton. For the deep-submicron bulk-silicon technology SRAM, the proton SEU cross section is closely related to the proton energy and there is a threshold energy for the SEU occurrence by proton indirect ionization. CREME-MC simulation indicates that the SEU events in deep-submicron SRAM are induced by the proton nuclear reaction.     

Stability and performance analysis of a jump linear control system subject to digital upsets

This paper focuses on the methodology analysis for the stability and the corresponding tracking performance of a closed-loop digital jump linear control system with a stochastic switching signal. The method is applied to a flight control system. A distributed recoverable platform is implemented on the flight control system and subject to independent digital upsets. The upset processes are used to stimulate electromagnetic environments. Specifically, the paper presents the scenarios that the upset process is directly injected into the distributed flight control system, which is modeled by independent Markov upset processes and independent and identically distributed(IID) processes. A theoretical performance analysis and simulation modelling are both presented in detail for a more complete independent digital upset injection. The specific examples are proposed to verify the methodology of tracking performance analysis. The general analyses for different configurations are also proposed. Comparisons among different configurations are conducted to demonstrate the availability and the characteristics of the design.     

重离子治癌的磁扫描照射野形成法

在论述重离子治癌照射的基本思想及其特点的基础上,着重对磁扫描照射野形成的两种技术路线——点扫描和栅扫描的优缺点进行了分析阐述.初步给出了 HIRFL上的重离子治癌终端磁扫描相关参数. The basic principle and characteristic of irradiation in heavy ion radiotherapy are introduced. Based on the basic principle and characteristic of irradiation in heavy ion radiotherapy, two magnetic scan methods for creating uniform irradiation field--the spot scan and the raster scan, are compared briefly. The parameter requests to the magnetic scanning system of the heavy ion radiotherapy facility planned in IMP(Institute of Modern Physics) are presented.     

医用质子和12C离子束的物理性质研究

质子和重离子在现代放射治疗手段中已起着不可替代的作用， 这主要取决于其独特的物理性质。 利用一步过程和两步过程的物理模型解释了离子能量损失的机制， 同时结合Geant4软件包模拟质子和12C在水中的运输过程， 研究了离子束的物理性质， 并讨论了计算的结果， 说明了质子和12C在医学中应用的优缺点。 Depending on their unique physical properties， proton and heavy ions have taken an irreplaceable role in modern means of tumor treatment. One step process and two step process physical models were employed to explain the mechanism of ion energy loss. The transport process of proton and 12C in water was simulated by Geant4 toolkit to study the physical properties of ion beam. The calculation results were discussed， which showed the advantages and disadvantages of proton and 12C in the medical application.     

重离子惯性聚变的研究

本文描述了重离子惯性聚变的研究现状和用于重离子惯性聚变的重离子加速器． The present researching status and the heavy ion accelerators used for inertial fusion of heavy ions are decribed in the paper.     

HIAF BRing及高能外靶实验终端的辐射屏蔽设计

强流重离子加速器（HIAF）是中国科学院近代物理研究所自主研制的一台高能强流重离子加速器,它可以实现p到U的全离子加速。为了保证HIAF运行时的辐射安全,针对该装置的增强器（BRing）及高能外靶实验终端,利用蒙特卡洛程序FLUKA及外推法计算得到了加速p,C及U三种离子时所需的辐射屏蔽。结果表明,加速质子时所需屏蔽厚度最大,并以此为依据给出了全地下结构的屏蔽设计。在此基础上,提出了一种估算高能质子/重离子加速器束流均匀损失时横向屏蔽厚度的方法。结果显示,估算结果与FLUKA计算结果符合较好,验证了该方法的有效性和准确性。High Intensity heavy-ion Accelerator Facility (HIAF) is designed by the Institute of Modern Physics, Chinese Academy of Sciences, which can accelerate particles from proton up to uranium. To guarantee the radiation safety of HIAF during operation, the FLUKA code and extrapolation method were adopted to calculate the shielding thickness. The calculations were based on proton, carbon and uranium particles when losing on the Booster Ring (BRing) and the high-energy experimental terminal. The results indicate that the shielding thickness required for accelerating protons was the largest. Basing on the results, a method for estimating the lateral shielding of a high-energy proton/heavy-ion accelerator was proposed. A good agreement shows between the estimated results and the FLUKA calculated results, the validity and accuracy of the method were verified.     

快重离子在固体中引起的电子发射

简要介绍了快重离子与固体相互作用研究的状况和快重离子引起固体电子发射的机制 ,讨论了电子能损导致原子位移的 3种微观模型 ,即“库仑爆炸”模型、“热峰”模型和“激发排斥”模型 ,简述了研究电子发射的实验测量装置和测量方法 ,讨论了总电子发射产额与电子能损的关系以及靶俄歇电子和快传输电子测量在电子激发诱发辐照损伤微观机制研究中的应用 ,并介绍了重离子在 C靶中产生的离子径迹处的电子温度和聚丙稀靶中离子径迹势的提取方法. The recent progresses in experimental and theoretical studies of the collision between swift heavy ion and solids as well as electron emission induced by swift heavy ion in solids were briefly reviewed. Three models, Coulomb explosion, thermal spike and repulsive long lived states, for interpreting the atomic displacements stimulated by the electronic energy loss were discussed. The experimental setup and methods for measuring the electron emission from solids were described ...     

纳米静态随机存储器低能质子单粒子翻转敏感性研究

针对65, 90, 250 nm三种不同特征尺寸的静态随机存储器基于国内和国外质子加速器试验平台, 获取了从低能到高能完整的质子单粒子翻转截面曲线. 试验结果表明, 对于纳米器件1 MeV以下低能质子所引起的单粒子翻转截面比高能质子单粒子翻转饱和截面最高可达3个数量级. 采用基于试验数据和器件信息相结合的方法, 构建了较为精确的复合灵敏体积几何结构模型, 在此基础上采用蒙特卡罗方法揭示了低能质子穿过多层金属布线层, 由于能量岐离使展宽能谱处于布拉格峰值的附近, 通过直接电离方式将能量集中沉积在灵敏体积内, 是导致单粒子翻转截面峰值的根本原因. 并针对某一轨道环境预估了低能质子对空间质子单粒子翻转率的贡献.     

卫星光通信系统中SRAM/MOS器件的单粒子翻转率分析

为了分析单粒子事件对卫星光通信系统造成的影响,需要预估器件的单粒子翻转率。通过比较微分能谱方法和FOM方法,选取FOM方法估算了在不同高度和不同倾角下的单粒子翻转率。分析了质子单粒子翻转率与空间轨道的关系。提出了基于单粒子翻转率的器件可靠性指标。数值计算结果表明,在较低轨道高度和较小轨道倾角条件下,SRAM/MOS器件受单粒子翻转影响较小、可靠性较高。     

基于蒙特卡洛和器件仿真的单粒子翻转计算方法

文章提出了一种基于蒙特卡洛和器件仿真的存储器单粒子翻转截面获取方法,可以准确计算存储器单粒子效应,并定位单粒子翻转的灵敏区域.基于该方法,计算了国产静态存储器和现场可编程门阵列(FPGA)存储区的单粒子效应的截面数据,仿真结果和重离子单粒子效应试验结果符合较好.仿真计算揭示了器件单粒子翻转敏感程度与器件n,p截止管区域面积相关的物理机理,并获得了不同线性能量转移(LET)值下单粒子翻转灵敏区域分布.采用蒙特卡洛方法计算了具有相同LET、不同能量的离子径迹分布,结果显示高能离子的电离径迹半径远大于低能离子,而低能离子径迹中心的能量密度却要高约两到三个数量级.随着器件特征尺寸的减小,这种差别的影响将会越来越明显,阈值LET和饱和截面将不能完全描述器件单粒子效应结果.     

Geant4 simulation of proton-induced single event upset in three-dimensional die-stacked SRAM device

Geant4 Monte Carlo simulation results of the single event upset(SEU) induced by protons with energy ranging from0.3 MeV to 1 GeV are reported.The SEU cross section for planar and three-dimensional(3 D) die-stacked SRAM are calculated.The results show that the SEU cross sections of the planar device and the 3 D device are different from each other under low energy proton direct ionization mechanism,but almost the same for the high energy proton.Besides,the multi-bit upset(MBU) ratio and pattern are presented and analyzed.The results indicate that the MBU ratio of the 3 D die-stacked device is higher than that of the planar device,and the MBU patterns are more complicated.Finally,the onorbit upset rate for the 3 D die-stacked device and the planar device are calculated by SPACE RADIATION software.The calculation results indicate that no matter what the orbital parameters and shielding conditions are,the on-orbit upset rate of planar device is higher than that of 3 D die-stacked device.     

N‐shell ionization cross sections by proton impact in the BEA

The N‐subshell ionizations cross sections of heavy elements by proton impact have been calculated in the binary‐encounter approximation. The momentum distribution of target electrons is taken into account by the use of the nonrelativistic and relativistic hydrogenic models and the Hartree–Fock–Roothaan and the relativistic Hartree–Fock–Roothaan methods. The obtained subshell ionization cross sections are compared with the experimental data and other theoretical calculations. The electronic relativistic effect and the wave‐function effect on N‐shell ionization cross sections are discussed.     

半导体器件单粒子效应的加速器模拟实验

 着重描述了应用加速器开展半导体器件的单粒子效应实验研究的方法。采用金箔散射法可以降低加速器束流几个量级，从而满足半导体器件单粒子效应实验的要求。研制的弱流质子束流测量系统和建立的质子注量均匀性测量方法解决了质子注量的准确测量问题。实验测得静态随机存取存储器的质子单粒子翻转截面为10^-7 cm²·bit^-11量级，单粒子翻转重离子LET阈值为4～8MeV·cm²/mg，重离子单粒子翻转饱和截面为10^-7 cm²·bit^-1量级。