| 高能质子引起器件单粒子效应的研究方法 |
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| 引用本文： | 刘杰,侯明东,张庆祥,甑红楼,孙友梅,刘昌龙,王志光,朱智勇,金运范.高能质子引起器件单粒子效应的研究方法[J].原子核物理评论,2002,19(4):411-415. |
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| 作者姓名： | 刘杰 侯明东 张庆祥 甑红楼 孙友梅 刘昌龙 王志光 朱智勇 金运范 |
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| 作者单位： | 中国科学院近代物理研究所 |
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| 基金项目： | 国家自然科学基金资助项目(10075064) |
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| 摘 要： | 简略介绍了高能质子在半导体芯片中引起单粒子效应的实验测量和理论分析方法,包括核反应分析方法、半经验方法,介绍了质子和重离子翻转截面间的关系,并用重离子实验数据预测器件在质子环境下的翻转率. This article introduces briefly the experimental and theoretical methods that have been used to study high energy proton induced single event effect in semiconductor devices. The theoretical methods including nuclear reaction analysis method and semi empirical method are presented. The relationship of upset cross section between proton and heavy ions is described. Finally, on orbit proton upset rates are predicted by using the heavy ion test data.
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| 关 键 词： | 单粒子效应 质子 半导体器件 |
| 文章编号： | 1007-4627(2002)04-0411-05 |
| 收稿时间： | 1900-01-01 |
| 修稿时间： | 2001年12月26 |
Approaches to Study Single Event Effects Induced by High Energy Protons in Devices |
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| Institution: | (Institute of Modern Physics; Chinese Academy of Sciences; Lanzhou 730000; China); |
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| Abstract: | This article introduces briefly the experimental and theoretical methods that have been used to study high energy proton induced single event effect in semiconductor devices. The theoretical methods including nuclear reaction analysis method and semi empirical method are presented. The relationship of upset cross section between proton and heavy ions is described. Finally, on orbit proton upset rates are predicted by using the heavy ion test data. |
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