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61.
Evolution of infrared spectra and optical emission spectra in hydrogenated silicon thin films prepared by VHF-PECVD 下载免费PDF全文
A series of hydrogenated silicon thin films with varying silane concentrations have been deposited by using very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The deposition process and the silicon thin films are studied by using optical emission spectroscopy (OES) and Fourier transfer infrared (FTIR) spectroscopy, respectively. The results show that when the silane concentration changes from 10% to 1%, the peak frequency of the Si—H stretching mode shifts from 2000 cm - 1 to 2100 cm - 1, while the peak frequency of the Si—H wagging—rocking mode shifts from 650 cm - 1 to 620 cm - 1. At the same time the SiH*/Hα intensity ratio in the plasma decreases gradually. The evolution of the infrared spectra and the optical emission spectra demonstrates a morphological phase transition from amorphous silicon (a-Si:H) to microcrystalline silicon (μc-Si:H). The structural evolution and the μc-Si:H formation have been analyzed based on the variation of Hα and SiH* intensities in the plasma. The role of oxygen impurity during the plasma process and in the silicon films is also discussed in this study. 相似文献
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本文研究了pin型非晶硅(a-Si)太阳电池p/i界面掺碳缓冲层(C-buffer layer)沉积时间对电池效率和稳定性的影响.研究发现,随着掺碳缓冲层沉积时间的增加,太阳电池的初始效率有所增加,当沉积时间增加到约60s时,电池的初始效率达最大值,而后随着沉积时间的继续增加,电池效率下降.而在太阳电池的稳定性方面,当缓冲层沉积时间小于50s时,随着沉积时间的增加,电池衰退率增大;大于50s后,电池的衰退率又随沉积时间的增大而减小. 相似文献
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采用甚高频等离子体增强化学气相沉积(VHF-PECVD)技术制备了不同腔室环境下的微晶硅薄膜.对单室沉积掺杂层p材料后遗留在腔室中的硼对本征微晶i材料电学特性和结构特性的影响进行了详细研究.测试结果表明:单室沉积p层后的硼降低了微晶i层材料的暗电导,增加了材料的光敏性;由于硼对i层污染程度的不同,使得材料的激活能发生了变化;腔室中残余的硼也导致微晶硅薄膜的结晶状况恶化,同时弱化了材料的(220)择优取向.而在较高功率和较强氢稀释下制备的晶化率较高,(220)晶向明显择优的材料受硼污染影响相对减小.
关键词:
单室
甚高频等离子体增强化学气相沉积
微晶硅
硼 相似文献
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对以热蒸发法制备的超薄Ag薄膜,扫描电子显微镜结果显示其呈纳米尺度的颗粒状,由透射谱测量发现其具有表面等离子体激元特征.检测到不同条件制备纳米Ag薄膜的表面等离子体共振吸收峰的位移规律,且纳米Ag材料具有选择性的透过、反射特性.通过不同的制备条件,得到了在长波范围内透过率超过90%、在表面等离子体共振峰值位置处反射率接近50%且峰位可调的光学薄膜材料.这种薄膜材料有望成为应用在薄膜太阳电池中间层中具有潜在性光管理功能的光学薄膜材料.
关键词:
热蒸发
纳米Ag薄膜
表面等离子体激元
光管理 相似文献
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采用高压高功率的甚高频等离子体增强化学气相沉积(VHF-PECVD)技术高速(沉积速率约为1.2 nm/s)沉积了一系列不同厚度的本征微晶硅薄膜,并通过Raman谱和XRD谱的测试,研究了高速沉积时本征微晶硅薄膜的微结构演变特性及其对电池性能的影响.针对其微结构特性及高速沉积本身存在的离子轰击作用强的特点,提出了在沉积微晶硅薄膜过程中采用功率梯度的方法,达到有效地控制薄膜微结构变化的目的,并在一定功率梯度范围内降低了电子温度,提高了薄膜质量,从而使电池效率明显提高.最后在沉积速率为1.2 nm/s时,制备
关键词:
高速沉积
微晶硅薄膜
微结构演变
功率梯度 相似文献
69.
采用常规的射频等离子体增强化学气相沉积技术制备了可以用于微晶硅薄膜太阳电池的n型的掺杂窗口层材料.通过掺杂窗口层材料在电池中的应用发现:微晶硅薄膜太阳电池由于其电子和空穴的迁移率相差比较小而显示出磷掺杂的n型的微晶硅材料也可以像硼掺杂的p型的微晶硅材料一样,可作为微晶硅薄膜太阳电池的窗口层材料;两种窗口层制备电池的效率差别不大,而且量子效率(QE)测试结果显示两种电池的n/i和p/i界面没有明显的区别;电池的双面不同波长拉曼光谱的测试结果给出:不论是n/i/p还是p/i/n型的电池,在起始生长本征层阶段均
关键词:
n型的掺杂窗口层
p型的掺杂窗口层
微晶硅薄膜太阳电池 相似文献
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Micromorph tandem solar cells: optimization of the microcrystalline silicon bottom cell in a single chamber system 下载免费PDF全文
We report on the development of single chamber deposition of microcrystalline and micromorph tandem solar cells directly onto low-cost glass substrates. The cells have pin single-junction or pin/pin double-junction structures on glass substrates coated with a transparent conductive oxide layer such as SnO2 or ZnO. By controlling boron and phosphorus contaminations, a single-junction microcrystalline silicon cell with a conversion efficiency of 7.47% is achieved with an i-layer thickness of 1.2 μm. In tandem devices, by thickness optimization of the microcrystalline silicon bottom solar cell, we obtained an initial conversion efficiency of 9.91% with an aluminum (Al) back reflector without a dielectric layer. In order to enhance the performance of the tandem solar cells, an improved light trapping structure with a ZnO/Al back reflector is used. As a result, a tandem solar cell with 11.04% of initial conversion efficiency has been obtained. 相似文献