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Research on the boron contamination at the p/i interface of microcrystalline silicon solar cells deposited in a single PECVD chamber 下载免费PDF全文
This paper studies boron contamination at the interface between the p and i layers of μc-Si:H solar cells deposited in a single-chamber PECVD system. The boron depth profile in the i layer was measured by Secondary Ion Mass Spectroscopy. It is found that the mixed-phase μc-Si:H materials with 40% crystalline volume fraction is easy to be affected by the residual boron in the reactor. The experimental results showed that a 500-nm thick μc-Si:H covering layer or a 30-seconds of hydrogen plasma treatment can effectively reduce the boron contamination at the p/i interface. However, from viewpoint of cost reduction, the hydrogen plasma treatment is desirable for solar cell manufacture because the substrate is not moved during the hydrogen plasma treatment. 相似文献
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以商用金红石相TiO2粉末为原料,通过在碱性溶液中150℃水热48h的方法合TiO2纳米管.采用SEM,TEN,XRD分析手段对TiO2纳米管的形貌和结构演变进行了表征.制成的TiO2纳米管与TritonX-100,乙酰丙酮混合后,通过丝网印刷的方法涂敷到ITO导电玻璃衬底上,并且在450℃下烧结30min后得到可应用于染料敏化太阳电池的多孔光阳极.将此光阳极浸泡于N719染料敏化后,与镀铂对电极组装电池,两者之间灌入液态电解质,电池的有效面积为0.28 cm2.在标准氙灯模拟器下(AM 1.5,100 roW/cm2)测试r电池的J-V特性,得到2.17%的光电转换效率. 相似文献
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以商用金红石相TiO2粉末为原料,通过在碱性溶液中150℃水热48h的方法合成TiO2纳米管.采用SEM,TEM,XRD分析手段对TiO2纳米管的形貌和结构演变进行了表征.制成的TiO2纳米管与TritonX-100,乙酰丙酮混合后,通过丝网印刷的方法涂敷到ITO导电玻璃衬底上,并且在450℃下烧结30min后得到可应用于染料敏化太阳电池的多孔光阳极.将此光阳极浸泡于N719染料敏化后,与镀铂对电极组装电池,两者之间灌
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2纳米管')" href="#">TiO2纳米管
染料敏化太阳电池
水热法 相似文献
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提出了一种表面修饰的金属诱导晶化方法,以稳定地获得晶粒尺寸均匀的多晶硅薄膜.为在非晶硅表面获得均匀稳定的Ni源,在晶化前驱物表面浸沾Ni盐溶液之前,先旋涂一层表面亲合剂.通过控制Ni盐溶液的浓度,可以获得均匀性较好、晶粒尺寸分布在20—70μm的多晶硅薄膜.该方法的特点是改善了Ni盐溶液在表面的黏附状态,从而可在比常规Ni盐溶液浓度低1—2个数量级的情况下仍能获得大晶粒的多晶薄膜.
关键词:
表面修饰
溶液法金属诱导晶化
多晶硅
均匀性 相似文献
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Fabrication of high growth rate solar-cell-quality μc-Si:H thin films by VHF-PECVD 总被引:4,自引:0,他引:4 下载免费PDF全文
Several series of Si:H films were fabricated by the very high frequency plasma enhanced chemical vapour deposition (VHF-PECVD) at different substrate temperatures (T_s) and silane concentration (SC=[SiH_4]/[SiH_4+H_2]%). The results of Raman spectroscopy showed structural evolution of the Si:H films with the variation of T_s and SC. The results of x-ray diffraction (XRD) measurements indicated that T_s also influences the crystal orientation of the Si:H films. The modulation effect of T_s on crystalline volume fraction (X_c) is more evident for the high SC, which shows different trend compared to low SC. In addition, the growth rate of the films also showed a regular change with the variation of SC and T_s. Different samples in the series showed a similar increase in dark conductivity and a decrease in photosensitivity with increasing T_s and decreasing SC. Device-quality microcrystalline silicon materials were deposited at a high growth rate, characterized by relatively low dark conductivity and relatively high photosensitivity in a certain crystalline range. The microcrystalline silicon solar cell with a conversion efficiency of 4.55% has been prepared by VHF-PECVD. 相似文献
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采用甚高频等离子体增强化学气相沉积技术成功地制备了不同硅烷浓度和辉光功率条件下的微晶硅电池.电池的J-V测试结果表明:在实验的硅烷浓度和功率范围内,随硅烷浓度的降低和功率的加大,对应电池的开路电压逐渐变小;硅烷浓度的不同对电池的短路电流密 度有很大的影响,但功率的影响在实验研究的范围内不是很显著.对于微晶硅电池,N层最好 是非晶硅,这是因为一方面可以降低对电流的横向收集效应,另一方面也降低了电池的漏电概率,提高了电池的填充因子.
关键词:
微晶硅太阳电池
甚高频等离子体增强化学气相沉积 相似文献
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