The study of a new n/p tunnel recombination junction and its application in a-Si：H/μc-Si：H tandem solar cells

This paper reports that a double N layer (a-Si:H/μc-Si:H) is used to substitute the single microcrystalline silicon n layer (n-μc-Si:H) in n/p tunnel recombination junction between subcells in a-Si:H/μc-Si:H tandem solar cells. The electrical transport and optical properties of these tunnel recombination junctions are investigated by current-voltage measurement and transmission measurement. The new n/p tunnel recombination junction shows a better ohmic contact. In addition, the n/p interface is exposed to the air to examine the effect of oxidation on the tunnel recombination junction performance. The open circuit voltage and FF of a-Si:H/μc-Si:H tandem solar cell are all improved and the current leakage of the subcells can be effectively prevented efficiently when the new n/p junction is implemented as tunnel recombination junction.     

质子-质子碰撞产生Θ+五夸克态过程中N(1710)的贡献

在相对论的框架下, 基于有效拉氏量, 在单π和单ρ介子交换的机制下, 我们推导了高能质子-质子碰撞过程中五夸克态产生过程反应截面. 利用已知的经验耦合常数和顶角形状因子, 研究了N^*(1710)核子激发态对反应截面的影响, 发现ρ介子交换在这些过程中起主导作用. 包括中间核子态N^*(1710)在质心能量为4GeV附近, 使反应截面增大几十倍, 其贡献是不可忽视的.     

Influence of the total gas flow rate on high rate growth microcrystalline silicon films and solar cells

This paper reports that high-rate-deposition of microcrystalline silicon solar cells was performed by very-high-frequency plasma-enhanced chemical vapor deposition. These solar cells, whose intrinsic μ c-Si:H layers were prepared by using a different total gas flow rate (F_total), behave much differently in performance, although their intrinsic layers have similar crystalline volume fraction, opto-electronic properties and a deposition rate of ～ 1.0~nm/s. The influence of F_total on the micro-structural properties was analyzed by Raman and Fourier transformed infrared measurements. The results showed that the vertical uniformity and the compact degree of μ c-Si:H thin films were improved with increasing F_total. The variation of the microstructure was regarded as the main reason for the difference of the J--V parameters. Combined with optical emission spectroscopy, we found that the gas temperature plays an important role in determining the microstructure of thin films. With F_total of 300~sccm, a conversion efficiency of 8.11% has been obtained for the intrinsic layer deposited at 8.5~\AA/s (1~\AA=0.1\,nm).     

提高非晶硅/微晶硅叠层太阳电池光稳定性的研究

如何提高硅基薄膜太阳电池的光稳定性是硅基薄膜太阳电池研究和产业化过程中非常重要的问题. 为了提高非晶硅/微晶硅叠层电池的光稳定性, 本文首先给出了良好光稳定性非晶硅顶电池的结果, 然后重点研究了N/P隧穿结和微晶硅底电池本征层硅烷浓度梯度对叠层电池光稳定性的影响. 经过初步优化, 连续光照1000 h后非晶硅/微晶硅叠层电池的最小光致衰退率只有7%.     

高速沉积本征微晶硅的优化及其在太阳电池中的应用

采用高压高功率的甚高频等离子体增强化学气相沉积（VHF-PECVD）技术高速（沉积速率约为1.2 nm/s）沉积了一系列不同厚度的本征微晶硅薄膜,并通过Raman谱和XRD谱的测试,研究了高速沉积时本征微晶硅薄膜的微结构演变特性及其对电池性能的影响.针对其微结构特性及高速沉积本身存在的离子轰击作用强的特点,提出了在沉积微晶硅薄膜过程中采用功率梯度的方法,达到有效地控制薄膜微结构变化的目的,并在一定功率梯度范围内降低了电子温度,提高了薄膜质量,从而使电池效率明显提高.最后在沉积速率为1.2 nm/s时,制备 关键词： 高速沉积 微晶硅薄膜 微结构演变 功率梯度     

高速沉积微晶硅薄膜光发射谱的研究

采用PR650光谱光度计对高速沉积微晶硅薄膜的生长过程进行了在线监测研究,并对所对应的材料进行了Raman谱和红外吸收谱(FTIR)的测试.结果表明：能反映材料晶化程度的I_［SiH^*］/I_［Hβ^*］比值在沉积时间为100 s之内有下降的趋势,且反应气体总流量T_fl越小下降趋势越明显,这与拉曼散射光谱对材料的结构测试结果一致;沉积5 min时I 关键词： 高速沉积 微晶硅薄膜 电子温度