n型窗口层材料及其在高速沉积微晶硅太阳电池中的应用研究

采用常规的射频等离子体增强化学气相沉积技术制备了可以用于微晶硅薄膜太阳电池的n型的掺杂窗口层材料.通过掺杂窗口层材料在电池中的应用发现：微晶硅薄膜太阳电池由于其电子和空穴的迁移率相差比较小而显示出磷掺杂的n型的微晶硅材料也可以像硼掺杂的p型的微晶硅材料一样，可作为微晶硅薄膜太阳电池的窗口层材料；两种窗口层制备电池的效率差别不大，而且量子效率（QE）测试结果显示两种电池的n/i和p/i界面没有明显的区别；电池的双面不同波长拉曼光谱的测试结果给出：不论是n/i/p还是p/i/n型的电池，在起始生长本征层阶段均 关键词： n型的掺杂窗口层 p型的掺杂窗口层 微晶硅薄膜太阳电池

N-type window layer and its application in high deposition rate microcrystalline silicon solar cells

N-type phosphors doping layer as the window layer of microcrystalline silicon solar cells has been fabricated using conversional radio frequency plasma enhanced chemical vapor deposition. Because of hole and electron mobilities are of the same order for microcrystalline silicon thin film, microcrystalline silicon solar cells based on n-type doping layer as the window layer almost show the same efficiency as microcrystalline silicon solar cells based on p-type doping layer as the window layer. In addition, the results of quantum efficiency are also consistent with the I-V measurement results. Bilateral Raman measurement results using laser light of different wavelength indicated that p/i or n/i interface incubation layer has a disadvantageous influence on the current density of the solar cells. Through the optimization of n/i interface incubation layer, glass/ZnO/n/i/p/Al microcrystalline silicon solar cell with 7.7% conversion efficiency has been fabricated.