硅薄膜沉积过程中等离子发光基团的一维空间分布研究

使用光发射谱(OES)对甚高频等离子增强化学气相沉积(VHF-PECVD)技术沉积硅薄膜时的等离子体发光基团的空间分布进行了在线监测和研究. 研究表明：等离子体的不同发光基团都存在着一个中间强度较大的区域和两边电极附近的暗区;增大硅烷浓度和提高辉光功率都会增大SiH^*峰强度;硼烷的加入,使得SiH^*和Hα^*峰强度增大,但硼烷流量变化的影响很小;硼烷流量增大,材料的晶化率下降,而I_{［Hα^*］关键词： 甚高频等离子增强化学气相沉积 等离子体 发光基团 空间分布}     

地源热泵耦合地埋管换热计算若干问题的研究

针对地质构造特点,进行地下一定深度的温度场测试;对耦合地埋管的换热设计计算中的若干问题进行了研究;在简化计算换热模型的基础上,在Excel上用VBA编写宏功能,得到实用的地埋管换热的工程设计计算方法,是一种工程易用的计算软件。同时将这种计算方法应用到了一个实际工程中,并对计算结果进行了验证。     

New type of Y-branch power splitter and beam expander based on eliminating anomalous reflection effect

We propose a new type of Y-branch power splitter and beam expander with scales of microns in two- dimensional （2D） photonic crystals （PCs） by drilling air holes in a silicon slice. Its functionality and performance are numerically investigated and simulated by finite-difference time-domain （FDTD） method. Simulation results show that the splitter can split a TE polarized light beam into two parallel sub-beams and the distance between them is tunable by changing the parameters of the splitter, while the expander can expand a narrow beam into a wider one, which is realized in an integrated optical circuit. The proposed device is based on the avoiding of anomalous reflection effect and the coupling transmission of defect modes of the interfaces.     

衬底温度对MOCVD法沉积ZnO透明导电薄膜的影响

研究了衬底温度对MOCVD技术制备的ZnO薄膜的微观结构和光电特性影响. XRD和SEM的研究结果表明，衬底温度对ZnO薄膜的微观结构有显著影响，明显的形貌转变温度大约发生在175℃，低于175℃，薄膜呈镜面结构，晶粒为球状，高于177℃的较高温度范围，薄膜从“类金字塔”状的绒面结构演化为“岩石”状显微组织；随着温度增加，薄膜的晶粒尺寸明显增大.绒面结构的未掺杂ZnO薄膜具有17.96 cm²/V·s的高迁移率和3.28×10^-2 Ω·cm的低电阻率，对ZnO薄膜的进一步掺杂和结构优化有望应用于Si薄膜太阳电池的前电极. 关键词： MOCVD ZnO薄膜 透明导电氧化物 太阳电池     

Research on the boron contamination at the p/i interface of microcrystalline silicon solar cells deposited in a single PECVD chamber

This paper studies boron contamination at the interface between the p and i layers of μ c-Si:H solar cells deposited in a single-chamber PECVD system. The boron depth profile in the i layer was measured by Secondary Ion Mass Spectroscopy. It is found that the mixed-phase μ c-Si:H materials with 40% crystalline volume fraction is easy to be affected by the residual boron in the reactor. The experimental results showed that a 500-nm thick μ c-Si:H covering layer or a 30-seconds of hydrogen plasma treatment can effectively reduce the boron contamination at the p/i interface. However, from viewpoint of cost reduction, the hydrogen plasma treatment is desirable for solar cell manufacture because the substrate is not moved during the hydrogen plasma treatment.     

染料敏化太阳电池工艺参数的优化

染料敏化纳晶TiO2薄膜太阳电池的性能受TiO2浆料组成、薄膜厚度、烧结工艺、染料浸渍时间、导电玻璃类型以及电极处理工艺等因素影响是很明显的.通过对上述各工艺参数的研究,探讨了它们对电池性能的影响规律,获得了最佳的工艺参数组合.     

乙烷氧化脱氢制乙烯CeO2-NiO/A2O3催化剂上氧物种的研究

在镍基催化剂上进行了乙烷氧化脱氢制乙烯的研究.结果表明,浸渍法制备的催化剂性能最佳.以浸渍法引入CeO2后,催化剂的低温反应活性显著提高.采用O2-TPD-MS、TPR和XPS等表征技术对催化剂进行了表征,结果显示:在ODE反应中,在低温下起主导作用的是"非化学计量氧"(O2-、O-和O22-);在高温下起主导作用的是晶格氧;CeO2的添加减弱了NiO与载体-γAl2O3间的强相互作用,提高了镍物种在载体上的分散度,高分散于催化剂表面的微晶NiO的量明显增加,此物种有利于催化剂的低温活性;影响了催化剂表面氧物种的分布,表面的晶格氧的相对浓度提高了,非化学计量氧的相对浓度降低了.     

对一道高考题的再探究

文1中徐道老师对2011年江苏省高考数学试卷第13题进行了讨论与推广,文中的解法及所获结论均不正确.本文将指出文1中解法的错误,并给出正确的结论.例1(2011年江苏省高考数学试卷第13题)设1=a1≤a2≤…≤a7,其中a1,a3,a5,a7成公比为q的等比数列,a2,a4,     

H2 气对脉冲磁控溅射铝掺杂氧化锌薄膜性能的影响

实验采用脉冲磁控溅射法制备铝掺杂氧化锌(AZO)薄膜.为了进一步提高AZO薄膜的光电性能,在溅射过程中加入一定流量的氢气,以高纯ZnO ∶Al₂O₃陶瓷靶为溅射靶材,制备AZO/H透明导电薄膜.通过测试薄膜的结构特性、表面形貌及其光电性能,详细地研究了氢气流量对AZO薄膜性能的影响.溅射过程中引入氢气,可以促进薄膜的晶化,提高薄膜的迁移率和透过率(400—1100 nm).采用纯氩气溅射制备AZO薄膜的电阻率为5.664×10^-4 Ω·cm 关键词： 氧化锌 氢气流量 磁控溅射 太阳电池     

Influence of Intertube Additional Atoms on Sliding Behaviors of Double-Walled Carbon Nanotube

The effects of intertube additional atoms on the sliding behaviors of double-walled carbon nanotubes(DWCNTs) are investigated using molecular dynamics(MD) simulation method.The interaction between carbon atoms is modeled using the second-generation reactive empirical bond-order potential coupled with the Lennard-Jones potential.The simulations indicate that intertube additional atoms of DWCNT can significantly enhance the load transfer between neighboring tubes of DWCNT.The improvement in load transfer is guaranteed by the addition of intertube atoms which are covalently bonded to the inner and outer tubes of DWCNT.The results also show that the sliding behaviors of DWCNT are strongly dependent of additional atom numbers.The results presented here demonstrate that the superior mechanical properties of DWCNT can be realized by controlling intertube coupling.The general conclusions derived from this work may be of importance in devising high-performance CNT composites.