1 053，527，351 nm倍频分离膜的制备与性能研究

 用电子束蒸发及光电极值监控技术在石英基底上沉积了三倍频分离膜，将部分样品置空气中于250 ℃温度下进行3 h热退火处理。然后用Lambda900分光光度计测量了样品的光谱性能；用表面热透镜技术测量了样品的弱吸收值；用调Q脉冲激光装置测试了样品分别在355 nm和1 064 nm的抗激光损伤阈值。实验结果发现，样品的实验光谱性能良好，退火前后其光谱性能几乎没有发生温漂，说明薄膜的温度稳定性好；同时弱吸收平均值从退火前的1.07×10^-4下降到退火后的6.2×10^-5，从而使对基频的抗激光损伤阈值提高，从14.6 J/cm²上升到18.8 J/cm²，但是三倍频阈值在退火后有显著降低，从7.5 J/cm²下降到2.5 J/cm²。     

Zn离子注入和退火对ZnO薄膜光学性能的影响

 利用溶胶凝胶方法在石英玻璃衬底上制备了ZnO薄膜，将能量56 keV、剂量1×10¹⁷ cm^-2的Zn离子注入到薄膜中。离子注入后，薄膜在500~900 ℃的氩气中退火，利用X射线衍射谱、光致发光谱和光吸收谱研究了离子注入和退火对ZnO薄膜结构和光学性质的影响。结果显示：衍射峰在约700 ℃退火后得到恢复；当退火温度小于600 ℃时，吸收边随着退火温度的提高发生蓝移，超过600 ℃时，吸收边随着退火温度的提高发生红移；近带边激子发光和深能级缺陷发光都随退火温度的提高而增强。     

氧分压对ZrO2薄膜激光损伤阈值的影响

 在不同的氧分压下用电子束热蒸发的方法制备了ZrO₂薄膜。分别通过X射线衍射、光学光谱、热透镜技术、抗激光辐照等测试，对所制备样品的微结构、折射率、吸收率及激光损伤阈值进行了测量。实验结果表明，薄膜中晶粒主要是四方相为主的多晶结构，并且随着氧分压的增加，结晶度、折射率以及弱吸收均逐渐降低。薄膜的激光损伤阈值开始随着氧分压增加从18.5J/cm²逐渐增加，氧分压为9×10^-3Pa时达到最大，值为26.7 J/cm²，氧分压再增加时则又降低到17.5 J/cm²。由此可见，氧分压引起的薄膜微结构变化是ZrO₂薄膜激光损伤阈值变化的主要原因。     

488 nm连续激光晶化本征非晶硅薄膜的喇曼光谱研究

利用等离子增强化学气相沉积系统制备了本征非晶硅薄膜,并选用488 nm波长的连续激光进行晶化.采用喇曼测试技术对本征非晶硅薄膜在不同激光功率密度和扫描时间下的晶化状态进行了表征,并用514 nm波长与488 nm波长对样品的晶化效果进行了比较.测试结果显示:激光照射时间60 s, 激光功率密度在1.57×10⁵ W/cm²时,能实现非晶硅向多晶硅的转变,在功率密度达到2.7 56×10⁵ W/cm²时,有非晶开始向单晶转变,随着激光功率密度的继续增加,晶化结果仍为单晶;在功率密度为2.362×10⁵ W/cm²下,60 s照射时间晶化效果较好;在功率密度为2.756×10⁵ W/cm²和照射时间为60 s的条件下,用488 nm波长比514 nm波长的激光晶化本征非晶硅薄膜效果较好,并均为单晶态.     

退火对B掺杂纳米金刚石薄膜微结构和电化学性能的影响

采用热丝化学气相沉积法制备B掺杂纳米金刚石薄膜,并对薄膜进行真空退火处理,系统研究了不同退火温度对B掺杂纳米金刚石薄膜的微结构和电化学性能的影响.结果表明,当退火温度升高到800 ℃后,薄膜的Raman谱图中由未退火时在1157,1346,1470,1555 cm^-1处的4个峰转变为只有D峰和G峰,说明晶界上的氢大量解吸附量减少,并且D峰和G峰的积分强度比I_D/I_G值变为最小,即sp²相团簇     

聚酰胺6的红外光谱

根据对聚酰胺类高聚物红外光谱的类比和对聚酰胺6试样进行氘化和碘处理后红外光谱的改变,以及根据对拉伸过的聚酰胺6薄膜试样的偏振红外光谱的观察,我们对聚酰胺6红外光谱中400cm^-1—1400cm^-1之间的主要吸收带,作了如下解释:1370cm^-1吸收带为ν_(cщN);1265cm^-1和1205cm^-1吸收带为δ_N-H+ν_(cщN)(酰胺Ⅲ);1170cm^-1吸收带为ν_(cN);730cm^-1吸收带为γ_(CH2)[当(CH₂)_n的n≥4时];690cm^-1吸收带为δ_N-H(面外);580cm^-1吸收带亦为δ_N-H(面外)。     

p型ZnO薄膜的制备及特性

采用射频磁控溅射在Si片上制备ZnO薄膜，通过离子注入对样品进行N掺杂，在不同温度下进行退火并实现了p型转变.用扫描电子显微镜、X射线衍射和Hall测量对薄膜进行了表征，结果表明薄膜具有良好的表面形貌和高度c轴择优取向，退火后p型ZnO薄膜的最高载流子浓度和最低电阻率分别为1.68×10¹⁶cm^-3和41.5Ω·cm.讨论并分析了退火温度和时间对ZnO薄膜p型转变的影响.     

铜铟铝硒硫薄膜的低成本非真空混合法制备

采用溶剂热法制备出铜铟铝硒Cu(In,Al)Se₂ (CIASe)粉末,然后滴涂铜铟铝硒CIASe浆料获得前驱体薄膜,最后通过硒化/硫化过程制备出铜铟铝硒CIASe和铜铟铝硒硫CIASeS薄膜．通过XRD、SEM、XRF及光吸收等表征,发现所制备的薄膜为单相的黄铜矿结构,具有(112)择优取向．同时,在使用硫元素替代硒之后,薄膜的XRD主峰向高的2θ角度漂移,多孔薄膜也变得更加致密．薄膜带隙值也增加到更为合适的范围,从1.21 eV增加到1.33 eV,这也说明了硫化过程有利于提高CIASeS薄膜的质量．     

1.319μm连续YAG激光束对可见光面阵CCD系统的干扰研究

 利用1.319μm连续钇铝石榴石激光对可见光面阵CCD系统进行干扰实验，分析了该CCD系统发生干扰饱和的原因，计算了1.319μm激光辐照面阵可见光CCD的干扰饱和阈值，利用实验数据在定量上验证了计算结果。当像面上激光功率密度达到10²W/cm²量级时，CCD出现饱和串音，达到10²W/cm²量级时，出现全屏饱和。     

一种印刷型薄膜太阳能电池p-n结调制技术

能带值为0.5~0.85 eV材料的稀缺是多结太阳能电池面临的一个主要挑战,本文使用非真空的机械化学法合成了能带值为0.83 eV的Cu₂SnS₃化合物,使用印刷技术将其制备成吸收层薄膜,并采用superstrate太阳能电池结构(Mo/Cu₂SnS₃/In₂S₃/TiO₂/FTO glass)对其光伏特性进行了研究.实验表明所制备的太阳能电池短路电流密度、开路电压、填充因子和转换效率分别为12.38 mA/cm²、320 mV、0.28和1.10%.此外,为更好地满足多结太阳能电池对电流匹配的需求,本文对所制备太阳能电池的Cu₂SnS₃/In₂S₃ p-n结进行了分析.通过在p-n结界面植入一层薄的疏松缓冲层,使调制后的太阳能电池短路电流密度从最初的12.38 mA/cm²增加到了23.15 mA/cm²,相应太阳能电池转换效率从1.1%增加到了1.92%.该p-n调制技术对印刷型薄膜太阳能电池具有重要借鉴意义.     

类富勒烯纳米晶CNx薄膜及其场致电子发射特性

利用微波等离子体增强化学气相沉积技术制备出了CN_x薄膜,并利用x射线光电子能谱、x射线衍射、扫描电子显微镜和Raman光谱等测试手段对所制备的CN_x薄膜的微结构和成分进行了分析.研究了其场致电子发射特性.发现薄膜的结构和场发射特性与反应系中的甲烷、氮气及氢气的流量比有关,当甲烷、氢气及氮气流量比为8/50/50 sccm时,制备的薄膜具有弯曲层状的纳米石墨晶体结构（类富勒烯结构）和很好的场发射特性.场发射阈值电场降低至1.1V/μm.当电场为5.9V/μm时,平 关键词： 类富勒烯 x薄膜')" href="#">CN_x薄膜 场致电子发射 微波等离子体增强化学气相沉积     

CuInS2 thin films obtained through the annealing of chemically deposited In2S3-CuS thin films

In this work, we report the formation of CuInS₂ thin films on glass substrates by heating chemically deposited multilayers of copper sulfide (CuS) and indium sulfide (In₂S₃) at 300 and 350 °C in nitrogen atmosphere at 10 Torr. CIS thin films were prepared by varying the CuS layer thickness in the multilayers with indium sulfide. The XRD analysis showed that the crystallographic structure of the CuInS₂ (JCPDS 27-0159) is present on the deposited films. From the optical analysis it was estimated the band gap value for the CIS film (1.49 eV). The electrical conductivity varies from 3 × 10⁻⁸ to 3 Ω⁻¹ cm⁻¹ depending on the thickness of the CuS film. CIS films showed p-type conductivity.     

退火气压对Bi3.25La0.75Ti3O12铁电薄膜的微观结构和铁电性能的影响

采用sol-gel法在Pt/TiO₂/SiO₂/p-Si(100)衬底上制备了Bi_3.25La_0.75Ti₃O₁₂(BLT)铁电薄膜,研究了在750 ℃时不同退火气压(p_{O2:10^-4—3 atm)对薄膜微观结构和电学性能的影响.XRD和拉曼光谱结果表明在10^-4和3 atm氧气压下退火 关键词： 3.25}La_0.75Ti₃O₁₂')" href="#">Bi_3.25La_0.75Ti₃O₁₂ 铁电性能 sol-gel法 正交化度     

用SCLC法研究低k多孔SiO2:F薄膜的隙态密度

用溶胶-凝胶法制备了低k多孔SiO₂:F薄膜，用空间电荷限制电流法(SCLC)研究了多孔SiO₂:F薄膜中的隙态密度以及掺F量对隙态密度的影响，得到了平衡费米能级附近的隙态密度约为7×10¹⁵cm^-3·eV^-1，以及带隙中隙态随能量的分布. 并对造成隙态的主要原因也进行了讨论.     

连续离子层吸附反应沉积后硫化法制备柔性铜锌锡硫薄膜太阳电池

在柔性钼箔衬底上采用连续离子层吸附反应法(successive ionic layer absorption and reaction)制备ZnS/Cu2SnSx叠层结构的预制层薄膜,预制层薄膜在蒸发硫气氛、550 C温度条件下进行退火得到Cu2ZnSnS4吸收层.分别采用EDS,XRD,Raman,SEM表征吸收层薄膜的成分、物相和表面形貌.结果表明,退火后薄膜结晶质量良好,表面形貌致密.用在普通钠钙玻璃上采用相同工艺制备的CZTS薄膜表征薄膜的光学和电学性能,表明退火后薄膜带隙宽度为1.49 eV,在可见光区光吸收系数大于104cm 1,载流子浓度与电阻率均满足薄膜太阳电池器件对吸收层的要求.用上述柔性衬底上的吸收层制备Mo foil/CZTS/CdS/i-ZnO/ZnO:Al/Ag结构的薄膜太阳电池得到2.42%的效率,是目前报道柔性CZTS太阳电池最高效率.     

Effect of ultrasonic irradiation on structure and electrochemical properties of LiMn2O4 thin films cathode material for Li-ion micro-batteries

Two kinds of spinel LiMn₂O₄ thin film for lithium ion micro-batteries were successfully prepared on polycrystal Pt substrates by spin coating methods, which were carried out under ultrasonic irradiation (USG) and magnetic stirring (MSG), respectively. The microstructures and electrochemical performance of LiMn₂O₄ thin films were characterized by thermogravimetry analysis (TGA), X-ray diffraction (XRD), scanning electron microscopy (SEM), and galvanostatic charge-discharge measurements. It was found that the crystalline structure of USG samples grew better than that of the MSG samples. At the same time, higher discharge capacity and better cycle stability were obtained for the LiMn₂O₄ thin films of USG at the current density of 50 μAh/cm² between 3.0 and 4.3 V. The 1st discharge capacity was 57.8 μAh/cm²-μm for USG thin films and 51.7 μAh/cm²-μm for MSG thin films. After 50 cycles, 91.4% and 69% of discharge capacity could be retained respectively, indicating that ultrasonic irradiation condition during spin coating was more suitable for preparing spinel LiMn₂O₄ thin films with better electrode performance for lithium ion micro-batteries.     

Effect of the laser fluence on the surface characterization of β-FeSi2 films prepared by pulsed laser deposition

Single-phase β-FeSi₂ films on silicon (1 0 0) were fabricated by pulse laser deposition. The structure and crystal quality of the samples were characterized by X-ray diffraction and Fourier transform infrared spectroscopy. The field scanning electron microscopy showed that the film thickness increases with the increasing of the laser fluence. Moreover, atomic force microscopy observations revealed the changes of surface properties with different laser fluence. Based upon all experimental results, it is found that 7 J/cm² is the most favorable for the formation of β-FeSi₂ thin films.     

O2掺杂对SiCOH低k薄膜结构与电学性能的影响

以十甲基环五硅氧烷(D5)和氧气(O₂)作为反应气体，采用电子回旋共振等离子体化学气相沉积(ECR-CVD)方法制备了k＝2.62的SiCOH薄膜.研究了O₂掺杂对薄膜结构与电学性能的影响.结果表明，采用O₂掺杂可以在保持较低介电常数的前提下极大地降低薄膜的漏电流，提高薄膜的绝缘性能，这与薄膜中Si-O立体鼠笼、Si-OH结构含量的提高有关. 关键词： SiCOH薄膜 2掺杂')" href="#">O₂掺杂 介电性能 键结构     

Annealing effects on the structure and electrical characteristics of amorphous Er2O3 films

Amorphous Er 2 O 3 films are deposited on Si (001) substrates by using reactive evaporation.This paper reports the evolution of the structure,morphology and electrical characteristics with annealing temperatures in an oxygen ambience.X-ray diffraction and high resolution transimission electron microscopy measurement show that the films remain amorphous even after annealing at 700 C.The capacitance in the accumulation region of Er 2 O 3 films annealed at 450 C is higher than that of as-deposited films and films annealed at other temperatures.An Er 2 O 3 /ErO x /SiO x /Si structure model is proposed to explain the results.The annealed films also exhibit a low leakage current density (around 1.38 × 10 4 A/cm 2 at a bias of 1 V) due to the evolution of morphology and composition of the films after they are annealed.     

Effects of different deposition conditions on the properties of Cu2S thin films

Cu₂S thin films deposited on glass substrate by chemical bath deposition were studied at different deposition temperatures and times. The results of X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive X-ray analysis (EDX), the Hall Effect measurement system and UV-Vis absorption spectroscopy indicate that both deposition temperature and time are important to obtain polycrystalline thin films. XRD showed that the polycrystalline Cu₂S thin films have monoclinic structure. Meanwhile, the structural variations were analyzed using SEM. EDX analysis results of the thin film showed that the atomic ratio of Cu/S was close to 2:1. It was found from the Hall Effect measurement that the resistivity varied from 4.59?×?10^?3 to 13.8?×?10^?3 (Ω?cm). The mobility values of the Cu₂S thin films having p-type conductivity varied from 15.16 to 134.6?cm²/V.s. The dark electrical resistivity measurements were studied at temperatures in the range 303–423?K. The electrical activation energies of Cu₂S thin films were calculated by using Arrhenius plots, from which two different activation energy values are estimated for each thin film. Using UV-Vis absorption spectroscopy (Ultraviolet/visible), the direct and indirect allowed optical band gap values were determined to lie between 2.16 and 2.37?eV and 1.79 and 1.99?eV, respectively. In addition, the values of the refractive index (n) and the extinction coefficient (k) were determined.