488nm连续激光晶化本征非晶硅薄膜的喇曼光谱研究

利用等离子增强化学气相沉积系统制备了本征非晶硅薄膜,并选用488 nm波长的连续激光进行晶化.采用喇曼测试技术对本征非晶硅薄膜在不同激光功率密度和扫描时间下的晶化状态进行了表征,并用514 nm波长与488 nm波长对样品的晶化效果进行了比较.测试结果显示:激光照射时间60 s,激光功率密度在1.57×105 W/cm...     

532nm连续激光晶化非晶硅薄膜的原位拉曼光谱研究

用磁控溅射制备了非晶硅薄膜,用波长为532 nm的连续激光退火和显微Raman光谱原位测试技术和场发射扫描电子显微镜研究了非晶硅薄膜在不同激光功率密度和不同扫描速度下的晶化状态。结果表明,激光照射时间10 s,激光功率密度大于2.929×105W/cm2时,能实现非晶硅薄膜晶化。在激光功率密度为5.093×105W/cm2,扫描速度为10 mm/s时非晶硅开始向多晶硅转化。在5.093×105W/cm2的功率密度下,以1.0 mm/s的扫描速度退火非晶硅薄膜,得到的晶粒直径为740 nm。     

不同波长激光辐照对痢疾杆菌生物学效应的影响

分别采用功率密度为1.7W/cm²、照射剂量为2000J/cm²的Ar⁺激光与LD激光辐照高耐药性的志贺氏福氏痢疾杆菌,波长较短的Ar⁺激光(488nm)所引起细菌的致死率与药敏实变率明显高于波长较长的LD激光(808nm),即波长较短的Ar⁺激光的辐照导致细菌耐药性显著降低.     

利用侧向阴影照相技术探测靶的飞行速度

 建立起一套侧向阴影照相的光学系统,利用可见光作为探测光,在状态方程实验中对靶的飞行速度进行探测。在天光KrF准分子激光装置上进行激光打靶实验,激光波长为248.4 nm。在激光功率密度为8.3×10¹¹ W/cm²的条件下,测得50 μm厚铝靶的飞行速度为3.28 km/s;在激光功率密度为4.7×1010¹¹ W/cm²的条件下,测得带100 μm厚烧蚀层的13 μm厚铝靶的飞行速度为2.52 km/s。最后进行了误差分析计算,实验中探测激光与靶表面偏离角度最大不会超过2.06°,偏离角对实验精度产生的影响可以被忽略。     

高功率半导体激光对光学元件损伤特性

 为研究880 nm高功率半导体连续激光器对光学元件的损伤特性,选择了K9玻璃、ZnSe晶体和无氧铜进行镀膜加工,形成高反射率和高透过率的光学元件。通过调节到达光学元件表面的平均功率和改变光斑大小来改变光学元件表面的功率密度,并连续照射30 s,最终通过显微镜来观察元件的激光损伤形貌。研究结果表明：镀高反膜的K9玻璃在功率密度达到600 W/cm²时,膜系表面出现烧熔现象,当达到1 000 W/cm²时出现炸裂现象,而无氧铜基底镀金反射镜在上述功率密度下未发现损伤;而镀增透膜的ZnSe晶体在激光功率密度高达1 000 W/cm²时,通过显微镜观察没有发现明显的损伤,热像仪显示基底温升为5 ℃。     

等离子体屏蔽和稀疏波对冲量耦合系数的影响

 利用脉冲Nd:YAG激光作用在铝、铜靶上，研究了不同入射激光能量下冲量耦合系数和离焦量之间的关系，以及不同功率密度情况下冲量耦合系数和光斑直径的关系。实验表明铝靶在入射激光脉冲能量由75.8 mJ增加到382.3 mJ时，冲量耦合系数峰值对应的最佳离焦量由－10 mm处远离焦点向透镜方向移到－18 mm，而对应的激光功率密度仅由2.0×10⁹ W/cm²增加到3.9×10⁹ W/cm²；铜靶实验规律和铝靶类似。等离子体屏蔽的吸收作用导致了冲量耦合系数达到最大值后迅速降低。铝靶在入射激光功率密度由0.7×10⁹ W/cm²增大到1.0×10¹⁰W/cm²时，冲量耦合系数随光斑直径增大而增大，对应变化斜率由5.2×10^-5N·s/（mm·J）增大到49.2×10^-5N·s/（mm·J），表明了稀疏波对冲量耦合系数的削弱作用随入射激光功率密度增加而增加，随光斑直径增大而减小。     

用光学记录速度干涉仪测量自由面速度

 建立了一套光学记录速度干涉仪系统(ORVIS)，用于测量强激光产生的冲击波状态方程中的自由面速度。该光学记录速度干涉仪系统的时间分辨率为179 ps，可以测量自由面速度随时间变化的整个过程。在天光KrF高功率准分子激光装置上进行激光打靶实验，激光波长248.4 nm，脉冲宽度25 ns，最大输出能量158 J。在激光功率密度为6.24×10¹¹W·cm^-2的条件下，测得厚20 μm铁膜的自由面速度可达3.86 km/s；在激光功率密度为7.28×10¹¹W·cm^-2条件下，100 μm铝膜（靶前有100 μm的CH膜作为烧蚀层）的自由面速度可以达到2.87 km/s。     

基于像散与理想光源成像原理的高亮度半导体激光器光纤耦合设计方法

运用像散原理和理想光源成像原理,讨论了半导体激光器消像散设计.提出了一种基于消像散的高亮度半导体激光器光纤耦合系统的设计方法.以波长为808 nm,输出功率为10 W的半导体激光器的光纤耦合为例,给出了详细的计算方法和设计步骤.结果表明:采用该方法将半导体激光器光束耦合入数值孔径为0.22,芯径为50 μm的光纤中,耦合后输出功率为9.712 W,耦合效率为97.12%,功率密度为1.1224×10⁶ W/cm².该方法不仅原理简单,而且设计的耦合系统耦合效率高、体积小,具有较强的实用价值.     

fs激光在靶背表面产生的质子束成丝

 介绍了利用3TW/60fs钛宝石超短超强激光与20μm铜薄膜靶相互作用的实验。实验观测到质子束的角分布随激光功率密度有所变化。在较高的功率密度（～1×10¹⁸ W/cm²）时，观测到环状的质子束分布，发散角较大。在较低的激光功率密度（～2×10¹⁷ W/cm²）时，质子束发散角减小，质子束出现成丝现象。质子束的角分布实际上反映了从靶前输运到靶背的超热电子电流横向分布。在输运过程中，由于Weibel不稳定性会使超热电子电流出现空心化并最后破裂成丝。     

激光功率密度对Al膜靶后表面快电子发射的影响

 报道了在20 TW皮秒激光器上完成的p偏振激光与等离子体相互作用过程中产生的快电子的角分布和能谱测量结果。实验得到：当激光功率密度小于10¹⁷ W/cm²时,电子发射没有明显定向性,在激光入射面内多峰发射;当激光功率密度大于10¹⁷ W/cm2,小于10¹⁸ W/cm²时,电子主要沿靶面法线方向发射;当激光功率密度达到相对论强度时,电子主要沿激光传播方向发射;激光功率密度未达到相对论强度时,靶后表面法线方向快电子能谱拟合平均温度符合共振吸收温度定标率;激光功率密度达相对论强度以上时,靶后表面法线方向快电子能谱拟合平均温度高于已有的温度定标率。     

Rapid crystallization of silicon films using Joule heating of metal films

50-nm thick amorphous silicon films formed on glass substrates were crystallized by rapid Joule heating induced by an electrical current flowing in 100-nm-thick Cr strips formed adjacently to 200-nm-thick SiO₂ intermediate layers. 3-μs-pulsed voltages were applied to the Cr strips. Melting of the Cr strips caused a high Joule heating intensity of about 1×10⁶ W/cm². Raman scattering measurements revealed complete crystallization of the silicon films at a Joule heating energy of 1.9 J/cm² via the SiO₂ intermediate layer. Transmission electron microscopy measurements confirmed a crystalline grain size of 50–100 nm. 1-μm-long crystalline grain growth was also observed just beneath the edge of the Cr strips. The electrical conductivity increased from 10^-5 S/cm to 0.3 S/cm for 7×10¹⁷-cm^-3-phosphorus-doped silicon films because of activation of the phosphorus atoms because of crystallization. The numerical analysis showed a density of localized defect states at the mid gap of 8.0×10¹⁷ cm^-3. Oxygen plasma treatment at 250 °C and 100 W for 5 min reduced the density of the defect states to 2.7×10¹⁷ cm^-3. Received: 3 April 2001 / Accepted: 9 April 2001 / Published online: 25 July 2001     

Structure and optical properties of carbon films obtained by multipulse pulsed laser deposition

We have obtained carbon thin films on silicon and glass substrates with multipulse pulsed laser irradiation of graphite under vacuum (p ≈ 2.6 Pa) using a high-frequency series of nanosecond laser pulses (τ = 85 ns, λ = 1060 nm) with pulse repetition frequency f ≈ 10–20 kHz and laser power density q ≈ 15–40 MW/cm². We established the optimal laser power density and laser pulse repetition frequency for obtaining amorphous nanostructured diamond-like films.     

Optical characterization of laser-induced crystallized silicon films

Optical absorption coefficient spectra of thin silicon films were precisely investigated using a simple reflectance system with total reflectance mirrors placed on the rear side of samples in order to cancel an interference effect in a range between 1.1 eV and 3 eV. The absorption coefficient decreased according to crystallization as the laser energy increased and it got similar to that of single crystalline silicon in the range of 1.7 eV 3 eV. However, the absorption coefficient was higher than 10² cm^–1 in the photon energy lower than 1.3 eV. This probably results from band tail states caused by defect states localized at grain boundaries in the crystallized films. 2.5%-phosphorus doped laser crystallized silicon films had a high optical absorption coefficient ( > 10⁴ cm^–1) in the low photon energy range (1.1 eV 1.7 eV) caused by free carriers produced from the dopant atoms activated in the silicon films. The experimental results gave the carrier density of 1.3 × 10²¹ cm³ and the carrier mobility of 20 cm²/Vs.     

Photodissociation effects on pulsed laser deposited silver oxide thin films: surface‐enhanced resonance Raman scattering

Temporal Raman scattering measurements with 488, 532 and 632 nm excitation wavelengths and normal Raman studies by varying the power (from 30 W/cm² to 2 MW/cm²) at 488 nm were performed on silver oxide thin films prepared by pulsed‐laser deposition. Initially, silver oxide Raman spectra were observed with all three excitation wavelengths. With further increase in time and power, silver oxide photodissociated into silver nanostructures. High‐intensity spectral lines were observed at 1336 ± 25 and 1596 ± 10 cm⁻¹ with 488 nm excitation. No spectral features were observed with 633 nm excitation. Surface‐enhanced resonance Raman scattering theory is used to explain the complex behavior in the intensity of the 1336/1596 cm⁻¹ lines with varying power of 488 nm excitation. Copyright © 2011 John Wiley & Sons, Ltd.     

Partial crystallization of silicon by high intensity laser irradiation

Commercial single crystal silicon wafers and amorphous silicon films piled on single crystal silicon wafers were irradiated with a femtosecond pulsed laser and a nanosecond pulsed laser at irradiation intensities between 10¹⁷ W/cm² and 10⁹ W/cm². In the single crystal silicon substrate, the irradiated area was changed to polycrystalline silicon and the piled silicon around the irradiated area has spindly column structures constructed of polycrystalline and amorphous silicon. In particular, in the case of the higher irradiation intensity of 10¹⁶ W/cm², the irradiated area was oriented to the same crystal direction as the substrate. In the case of the lower irradiation intensity of 10⁸ W/cm², only amorphous silicon was observed around the irradiated area, even when the target was single crystal silicon. In contrast, only amorphous silicon particles were found to be piled on the amorphous silicon film, irrespective of the intensity and pulse duration.Three-dimensional thermal diffusion equation for the piled particles on the substrate was solved by using the finite difference methods. The results of our heat-flow simulation of the piled particles almost agree with the experimental results.     

Morphological and optical properties of silicon thin films by PLD

Silicon thin films have been prepared on sapphire substrates by pulsed laser deposition (PLD) technique. The films were deposited in vacuum from a silicon target at a base pressure of 10⁻⁶ mbar in the temperature range from 400 to 800 °C. A Q-switched Nd:YAG laser (1064 nm, 5 ns duration, 10 Hz) at a constant energy density of 2 J × cm⁻² has been used. The influence of the substrate temperature on the structural, morphological and optical properties of the Si thin films was investigated.Spectral ellipsometry and atomic force microscopy (AFM) were used to study the thickness and the surface roughness of the deposited films. Surface roughness values measured by AFM and ellipsometry show the same tendency of increasing roughness with increased deposition temperature.     

Semiconductor laser crystallization of a-Si:H on conducting tin-oxide-coated glass for solar cell and display applications

Semiconductor laser (=805 nm) crystallization of hydrogenated amorphous silicon (a-Si:H) deposited on a low-cost fluoride-doped tin-oxide-coated glass substrate is demonstrated. X-ray diffraction confirms that the structure of the polycrystalline silicon thus formed shows (111), (220), and (311) peaks. A sharp Raman peak at 520 cm^-1 further confirms the crystallization. Atomic force microscope images of a Secco-etched laser-treated sample reveal the granular structure of the poly-Si. Grains as big as 10 times the film thickness are readily obtained and sample as thick as 5000 Å is easily crystallized. The method can be extended to films with a thickness of several microns. PACS 42.55.Px; 42.62.Cf; 81.05.Gc     

激光功率密度对类金刚石膜结构性能的影响

采用大功率高重复频率准分子激光溅射热解石墨靶制备了类金刚石膜，研究了激光功率密度对膜的结构和性能的影响，分析了膜的紫外可见透过谱及膜的带隙结构、Raman谱和电子衍射图，结果表明随着激光功率密度由10⁸W／cm²提高至10¹⁰ W／cm²，膜的结构也由无定形非晶结构转变为纳米晶金刚石结构，膜 中的sp³键舍量及各项性能均有提高. 关键词： 激光功率密度 类金刚石膜 性能 结构     

Excimer laser crystallization of amorphous silicon on metallic substrate

An attempt has been made to achieve the crystallization of silicon thin film on metallic foils by long pulse duration excimer laser processing. Amorphous silicon thin films (100 nm) were deposited by radiofrequency magnetron sputtering on a commercial metallic alloy (N42-FeNi made of 41 % of Ni) coated by a tantalum nitride (TaN) layer. The TaN coating acts as a barrier layer, preventing the diffusion of metallic impurities in the silicon thin film during the laser annealing. An energy density threshold of 0.3 J?cm^?2, necessary for surface melting and crystallization of the amorphous silicon, was predicted by a numerical simulation of laser-induced phase transitions and witnessed by Raman analysis. Beyond this fluence, the melt depth increases with the intensification of energy density. A complete crystallization of the layer is achieved for an energy density of 0.9 J?cm^?2. Scanning electron microscopy unveils the nanostructuring of the silicon after laser irradiation, while cross-sectional transmission electron microscopy reveals the crystallites’ columnar growth.