Al纳米颗粒增强微晶硅薄膜太阳电池光吸收的模拟研究

利用价格低廉、性能优良的金属纳米颗粒增强太阳电池的光吸收具有广阔的应用前景. 通过建立三维数值模型, 模拟了微晶硅薄膜电池前表面周期性分布的Al纳米颗粒阵列对电池光吸收的影响, 并对其结构参数进行了优化. 模拟结果表明: 对于球状Al纳米颗粒阵列, 影响电池光吸收的关键参数是周期P与半径R的比值, 或者说是颗粒的表面覆盖度; 当P/R=4–5时, 总的光吸收较参考电池提高可达20%. 与球状颗粒相比, 优化后的半球状Al纳米颗粒阵列可获得更好的陷光效果, 但后者对颗粒半径R的变化较敏感. 另外, 结合电场分布, 对电池光吸收增强的物理机理进行了分析.     

Effect of substrate temperature on microstructure and optical properties of single-phased Ag20 film deposited by using radio-frequency reactive magnetron sputtering method

Using a radio-frequency reactive magnetron sputtering technique, a series of the single-phased Ag20 films are deposited in a mixture of oxygen and argon gas with a flow ratio of 2：3 by changing substrate temperature （Ts）. Effects of the Ts on the microstructure and optical properties of the films are investigated by using X-ray diffractometry, scanning electron microscopy and spectrophotometry. The single-phased Ag20 films deposited at values of Ts below 200℃ are （111） preferentially oriented, which may be due to the smallest free energy of the （111） crystalline face. The film crystallization becomes poor as the value of Ts increases from 100℃ to 225℃. In particular, the Ag20 film deposited at Ts=225℃ loses the （111） preferential orientation. Correspondingly, the film surface morphology obviously evolves from a uniform and compact surface structure to a loose and gullied surface structure. With the increase of Ts value, the transmissivity and the reflectivity of the films in the transparent region are gradually reduced, while the absorptivity gradually increases, which may be attributed to an evolution of the crystalline structure and the surface morphology of the films.     

The study of amorphous incubation layers during the growth of microcrystalline silicon films under different deposition conditions

<正>The structural un-uniformity of μc-Si:H films prepared using a very high frequency plasma-enhanced chemical vapour deposition method has been investigated by Raman spectroscopy,spectroscopic ellipsometer and atomic force microscopy.It was found that the formation of amorphous incubation layer was caused by the back diffusion of SiH_4 and the amorphous induction of glass surface during the initial ignition process,and growth of the incubation layer can be suppressed and uniformμc-Si:H phase is generated by the application of delayed initial SiH_4 density and silane profiling methods.     

利用快速热退火法制备多晶硅薄膜

为了制备优质的多晶硅薄膜,该论文研究了非晶硅薄膜的快速热退火(RTA)技术.先利用PECVD设备沉积非晶硅薄膜,然后把其放入快速热退火炉中进行退火.退火前后的薄膜利用X射线衍射(XRD)仪、Raman光谱仪及扫描电子显微镜(SEM)测试其晶体结构及表面形貌,利用电导率测试设备测试其暗电导率.研究表明退火温度、退火时间以及沉积时的衬底温度对非晶硅薄膜的晶化都有很大的影响.     

金刚石薄膜的结构特征对薄膜附着性能的影响

在不同实验条件下，用微波等离子体化学气相沉积设备在硬质合金(WC+6%Co)衬底上沉积了 具有不同结构特征的金刚石薄膜.用Raman谱表征薄膜的品质和应力，用压痕实验表征薄膜的 附着性能，考察了薄膜中sp²杂化碳含量、形核密度、薄膜厚度对薄膜附着性能 的影响.结 果表明：sp²杂化碳的缓冲作用使薄膜中sp²杂化碳的含量对薄膜中 残余应力有较大的影 响，从而使薄膜压痕开裂直径统计性地随sp²杂化碳含量的增加而减小；仅仅依 靠超声遗 留的金刚石晶籽提高形核密度并不能有效改变薄膜与硬质合金基体之间的化学结合状况，从 而不能有效提高薄膜在衬底上的附着性能；在薄膜较薄时，晶粒之间没有压应力的存在，开 裂直径并不明显随厚度增加而增加，只有当薄膜厚度增加到一定值，晶粒之间才有较强压应 力存在，开裂直径随厚度的增加而较为迅速地增加. 关键词： 金刚石薄膜 附着性能 2杂化碳')" href="#">sp²杂化碳 成核密度 薄膜厚度     

非晶硅薄膜的快速热退火机理研究

采用RTA方法对PECVD沉积的a-S i:H薄膜进行固相晶化是近年来发展起来的一种制备多晶硅薄膜的新方法。通过研究不同退火工艺条件对薄膜结构的影响,来揭示快速热退火机理。研究表明短波长光(≤730nm)的量子效应在晶化过程中可能起着至关重要的作用。     

椭圆偏振技术研究VHF-PECVD高速沉积微晶硅薄膜的异常标度行为

采用VHF-PECVD技术高速沉积了不同生长阶段的微晶硅薄膜,通过椭圆偏振技术研究了生长过程中微晶硅薄膜表面粗糙度的演化.实验结果表明,沉积气压P_g=300 Pa时,β=0.81,其超出标度理论中β最大值为0.5范围,出现异常标度行为.这表明微晶硅薄膜高速生长中还存在其他粗糙化增加的因素,此粗糙化增加的因素与阴影作用有关. 关键词： 微晶硅薄膜 椭偏光谱法 生长机制 表面粗糙度     

Preparing Cu₂ZnSnS₄ films using the co-electrodeposition method with ionic liquids

Cu₂ZnSnS4（CZTS） films are successfully prepared by co-electrodeposition in aqueous ionic solution and sulfurized in elemental sulfur vapor ambient at 400 C for 30 min using nitrogen as the protective gas.It is found that the CZTS film synthesized at Cu/（Zn+Sn）=0.71 has a kesterite structure,a bandgap of about 1.51 eV,and an absorption coefficient of the order of 10 4 cm 1.This indicates that the co-electrodeposition method with aqueous ionic solution is a viable process for the growth of CZTS films for application in photovoltaic devices.     

Effect of substrate temperature on microstructure and optical properties of single-phased Ag2O film deposited by using radio-frequency reactive magnetron sputtering method

Using a radio-frequency reactive magnetron sputtering technique,a series of the single-phased Ag2O films are deposited in a mixture of oxygen and argon gas with a flow ratio of 2:3 by changing substrate temperature(T s).Effects of the T s on the microstructure and optical properties of the films are investigated by using X-ray diffractometry,scanning electron microscopy and spectrophotometry.The single-phased Ag2O films deposited at values of T s below 200℃ are(111) preferentially oriented,which may be due to the smallest free energy of the(111) crystalline face.The film crystallization becomes poor as the value of T s increases from 100℃ to 225℃.In particular,the Ag2O film deposited at T s = 225℃ loses the 111 preferential orientation.Correspondingly,the film surface morphology obviously evolves from a uniform and compact surface structure to a loose and gullied surface structure.With the increase of T s value,the transmissivity and the reflectivity of the films in the transparent region are gradually reduced,while the absorptivity gradually increases,which may be attributed to an evolution of the crystalline structure and the surface morphology of the films.     

薄膜硅/晶体硅异质结电池中本征硅薄膜钝化层的性质及光发射谱研究

本文采用甚高频等离子体化学气相沉积技术 (VHF-PECVD) 制备薄膜硅/晶体硅异质结电池中的本征硅薄膜钝化层, 光发射谱 (OES) 测量技术研究了硅薄膜沉积过程中等离子体发光谱随时间的变化. 结果表明: 在实验优化条件下等离子体发光谱很快达到稳定 (大约25 s), 并且SiH^*/H_α^* 的比值随时间变化较小, 避免了生长过程中硅薄膜结构的不均匀性, 这主要是SiH₄没有完全耗尽避免了SiH₄的反向扩散. 进一步研究了沉积参数对稳态发光谱和硅薄膜性质的影响, 结果表明: 随着硅烷浓度增加, H_α^*峰强度减小, SiH^*峰强度增加, 薄膜从微晶转变成非晶, 非晶硅薄膜钝化效果好; 随着沉积气压增大, H_α^*和 SiH^*峰强度先增加后减小, 高气压下H_α^*和 SiH^*峰强度下降主要是反应前驱物的聚合形成高聚合物, 不利于形成高质量的硅薄膜, 因此钝化效果下降; 随着反应功率密度增加, H_α^*和 SiH^*峰强度增大, 当功率密度为150 mW/cm² 趋于饱和, 硅薄膜的致密度和钝化效果也开始下降, 50 mW/cm²的低功率密度下硅薄膜钝化效果差可能是由于原子H 浓度低, 不能完全钝化单晶硅表面的悬挂键. 关键词： 薄膜硅 异质结 光发射谱 钝化