双波长外腔面发射激光器

双波长激光光源在干涉测量、非线性频率变换产生中红外及太赫兹波段相干辐射等方面有重要的应用.外腔面发射激光器具有输出功率高、光束质量好、发射波长可设计等突出优势,非常适合用于双波长的产生.用有源区为In0.185Ga0.815As/GaAs应变多量子阱、设计波长为960 nm,以及有源区为In0.26Ga0.74As/GaAsP0.02应变多量子阱、设计波长为1080 nm的两块半导体增益芯片,在一个共线Y型谐振腔中,获得了激光波长分别为953 nm和1100 nm的双波长输出,对应光谱线宽为1.1 nm和2.7 nm,波长间隔147 nm.室温下,每块增益芯片的抽运吸收功率均为5.8 W时,双波长激光器总的输出功率达到293 mW.     

高转换效率腔内倍频外腔面发射蓝光激光器

高功率高光束质量的蓝色激光在激光显示与照明、水下通信和成像、有色金属加工等许多领域具有广泛应用前景.本文利用增益芯片底部的高反镜分布布拉格反射镜、折叠镜以及后端反射镜构成V型谐振腔,通过腔内插入非线性晶体LBO,获得了高转换效率的高功率、高光束质量蓝光输出.实验研究了非线性晶体的长度、基频激光的线宽、倍频走离角的补偿等不同因素对外腔面发射激光器腔内倍频蓝光输出功率的影响.在LBO的Ⅰ类相位匹配条件下,当晶体长度为5 mm,所用双折射滤波片厚度为1 mm时,获得超过6 W的491 nm波长蓝光输出,x和y方向的光束质量M2因子均为1.08,倍频转换效率为63%.     

基于蒙特卡洛法的水下无线光传输特性分析

水下无线光传输面临功率衰减和时域宽度变大的问题,蓝绿光长距离传输特性更难以测试。利用蒙特卡洛法对水下蓝绿高斯光束传输过程进行仿真,分析海水类型、传输距离和发散角等因素对接收功率及脉冲响应的影响,数值对比小发散角情况下不同海水类型和传输距离的接收面上功率分布。结果表明,随着海水衰减系数、传输距离和发散角的增加,接收功率逐渐减小,时域宽度扩展变大。其中浑浊港湾海水在10 m以上传输距离时,接收功率受发散角的影响微乎其微,而时域宽度随发散角的增加由0.32 ns变为0.8 ns。虽然传输距离相差一倍,纯海水和清澈海水功率相似度依然高达99%。基于海水衰减系数的差异性,利用功率相似度和面积比来研究水下长距离的传输,可高效快速地获得长距离传输特性。     

Effect of Post-Annealing on Microstructural and Electrical Properties of N^＋Ion-Implanted into ZnO：In Films

We fabricate p-type conductive ZnO thin films on quartz glass substrates by codoping of In-N using radio frequency magnetron sputtering technique together with the direct implantation of acceptor dopants （nitrogen）. The effects of thermal annealing on the structure and electrical properties of the ZnO films are investigated by an x-ray diffractometer （XRD） and a Hall measurement system. It is found that the best p-type ZnO film subjected to annealed exhibits excellent electrical properties with a hole concentration of 1.22 × 10^18 cm^-3, a Hall mobility of 2.19 cm^2 V^-1 s^- 1, and a low resistivity of about 2.33 Ωcm, indicating that the presence of In may facilitates the incorporation of N into ZnO thin films.     

p型ZnO薄膜的制备及特性

采用射频磁控溅射在Si片上制备ZnO薄膜，通过离子注入对样品进行N掺杂，在不同温度下进行退火并实现了p型转变.用扫描电子显微镜、X射线衍射和Hall测量对薄膜进行了表征，结果表明薄膜具有良好的表面形貌和高度c轴择优取向，退火后p型ZnO薄膜的最高载流子浓度和最低电阻率分别为1.68×10¹⁶cm^-3和41.5Ω·cm.讨论并分析了退火温度和时间对ZnO薄膜p型转变的影响.     

High power external-cavity surface-emitting laser with front and end pump

High power optically pumped vertical-external-cavity surface-emitting lasers with front and end pump are reported. The gain chip consists of 15 repeats of In_(0.26)GaAs/GaAsP_(0.02) multiple quantum wells and 30 pairs of Al_(0.2)GaAs/Al_(0.98)GaAs distributed Bragg reflectors. The maximum output power of 3 W, optical-to-optical conversion efficiency of 22.4%, and slope efficiency of 29.8% are obtained with 5-℃ heatsink temperature under the front pump,while the maximum output power of 1.1 W, optical-to-optical conversion efficiency of 23.2%, and slope efficiency of30.8% are reached with 5-℃ heatsink temperature under the end pump. Influences of thermal effects on the output power of the laser with front and end pump are discussed.