Electrochemical behaviour of sputtered c-V2O5 and LiCoO2 thin films for solid state lithium microbatteries

Here are reported for the first time electrochemical data on all-solid-state lithium microbatteries using crystalline sputtered V₂O₅ thin films as cathode materials and LiPON as solid electrolyte. The stable specific capacity of 30 µAh/cm² found with a 2.4 µm thick film competes very well with the best values obtained for solid state microbatteries using amorphous films. With the challenge of decreasing the temperature of heat treatment for sputtered LiCoO₂ thin films, we show that a temperature of 500 °C combined with an optimized bias sputtering (-50 V) allows to get highly crystalline deposits, to minimize the presence of Co₃O₄ and to suppress any trace of the cubic phase. At the same time the theoretical specific capacity is reached in the 4.2 V-3 V range and a good cycling behaviour is achieved with a high capacity of 50 µAh/cm²/µm after 140 cycles at 10 µA.cm².     

Improvement of electrochemical performance of all-solid-state lithium secondary batteries by surface modification of LiMn2O4 positive electrode

To improve the electrochemical performance of an all-solid-state In/80Li₂S⋅20P₂S₅ (electrolyte)/LiMn₂O₄ cell, a lithium-titanate thin film was used to coat LiMn₂O₄. The interfacial resistance between LiMn₂O₄ and the electrolyte (measured after initial charging) decreased when the LiMn₂O₄ particles were coated with lithium-titanate. A cell with lithium-titanate-coated LiMn₂O₄ had a higher capacity than a cell with noncoated LiMn₂O₄ for current densities in the range 0.064 to 2.6 mA cm^− 2. Additionally, a cell with coated LiMn₂O₄ retained 96% of the 10th-cycle reversible capacity at a current density of 0.064 mA cm^− 2 after 50 cycles.     

Characterization and electrochemical performance of the spinel LiMn2O4 prepared from -MnO2

The preparation and characterization of the spinel LiMn₂O₄ obtained by solid state reaction from quasi-amorphous -MnO₂ is reported. A well-defined highly pure spinel was characterized from X-ray diffractograms. The average manganese valence of -MnO₂ and spinel samples was found to be 3.89±0.01 and 3.59±0.01, respectively. The electrochemical performance of the spinel was evaluated through cyclic voltammetry and chronopotentiometry. The voltammetric profiles obtained at 1 mV/s for the LiMn₂O₄ electrode in 1 M LiClO₄ dissolved in a 2:1 mixture of ethylene carbonate and dimethyl carbonate showed typical peaks for the lithium insertion/extraction reactions. The charge capacity of this electrode was found to be 110 mA h g⁻¹ for the first charge/discharge cycles.     

Precursor derived LiMn2O4 thin films as ionic conductor

Thin films of spinel LiMn₂O₄ have been fabricated using a metallorganic precursor. Crystalline films have been deposited on Au substrates to exhibit as the cathode in rechargeable thin film lithium batteries. The nucleation and growth of spinel LiMn₂O₄ crystallites were investigated with heat treatment of the deposited thin films. Film capacity density as high as 22 μAh/cm² was measured for LiMn₂O₄. The film heat treated at 700 °C were cycled electrochemically up to 30 cycles against Li metal without any degradation of the capacity. There were neither open area nor amorphous layers which prevent the Li⁺ions transfer at the boundaries in the LiMn₂O₄ thin film. The microscopic study revealed that (111) planes in the two grains directly bonded at the grain boundary which could proceed the lithium ion intercalation or deintercalation smoothly.     

Chemical synthesis of spinel nickel ferrite (NiFe2O4) nano-sheets

The present investigation is related to the deposition of single-phase nano-sheets spinel nickel ferrite (NiFe₂O₄) thin films onto glass substrates using a chemical method. Nano-sheets nickel ferrite films were deposited from an alkaline bath containing Ni²⁺ and Fe²⁺ ions. The films were characterized for their structural, surface morphological and electrical properties by means of X-ray diffraction (XRD), transmission electron microscope (TEM), Fourier transform infrared spectroscopy (FT-IR), scanning electron microscopy (SEM), and two-point probe electrical resistivity techniques. The X-ray diffraction pattern showed that NiFe₂O₄ nano-sheets are oriented along (3 1 1) plane. The FT-IR spectra of NiFe₂O₄ films showed strong absorption peaks around 600 and 400 cm⁻¹ which are typical for cubic spinel crystal structure. Microstructural study of NiFe₂O₄ film revealed nano-sheet like morphology with average sheet thickness of 30 nm. The room temperature electrical resistivity of the NiFe₂O₄ nano-sheets was 10⁷ Ω cm.     

Atomic force microscopy study of surface morphology change in spinel LiMn2O4: Possibility of direct observation of Jahn-Teller instability

Surface morphology in 3.5 × 3.5 μm² area of spinel LiMn₂O₄, which is a typical cathode material for Li ion secondary batteries, is studied using an atomic force microscopy (AFM) with a conductive probe. Negative bias voltage is applied to the probe to attract Li⁺ ions toward LiMn₂O₄ surface during the AFM observation. Before applying the voltage (0 V), the whole LiMn₂O₄ surface is covered with scale-shaped grains. Under the negative voltage of 5.5 V, electric current abruptly increases, indicating Li⁺ ionic conduction. Simultaneously, part of the scale-shaped grains expand and flatten. Jahn-Teller phase transition, which is induced by the repulsive interaction between the Mn-e_g and O-2p electrons in Li accumulated layer, is proposed as a possible origin of these results.     

Facile synthesis of Nb2O5 nanorod array films and their electrochemical properties

Nb₂O₅ nanorod array films were synthesized by a facile hydrothermal process using niobium metal foil and NH₄F as precursors. The Nb₂O₅ nanorods stand on the niobium metal foil substrate and are less than 100 nm in diameter and about 1 μm in length. X-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM) characterizations indicate that these nanorods have orthorhombic structure and grew longitudinally along 〈0 0 1〉 direction. The nanorod growth mechanism was discussed. Thermal annealing at a temperature below 500 °C did not change the microstructure of nanorods but improve the crystallinity. The Nb₂O₅ nanorod array films have been tested as cathode material for lithium battery, which showed a good specific capacity up to 380 mAh g⁻¹ even after 50 charge/discharge cycles.     

Effects of vanadium doping on structure and electrical properties of SrBi4Ti4O15 thin films

The effects of vanadium(V) doping into SrBi₄Ti₄O₁₅ (SBTi) thin films on the structure, ferroelectric, leakage current, dielectric, and fatigue properties have been studied. X-ray diffraction result showed that the crystal structure of the SBTi thin films with and without vanadium is the same. Enhanced ferroelectricity was observed in the V-doped SrBi₄Ti₄O₁₅ (SrBi_4−x/3Ti_4−xV_xO₁₅, SBTiV-x (x = 0.03, 0.06, and 0.09)) thin films compared to the pure SrBi₄Ti₄O₁₅ thin film. The values of remnant polarization (2P_r) and coercive field (2E_c) of the SBTiV-0.09 thin film capacitor were 40.9 μC/cm² and 105.6 kV/cm at an applied electric field of 187.5 kV/cm, respectively. The 2P_r value is over five times larger than that of the pure SBTi thin film capacitor. At 100 kHz, the values of dielectric constant and dielectric loss were 449 and 0.04, and 214 and 0.06 for the SBTiV-0.09 and the pure SBTi thin film capacitors, respectively. The leakage current density of the SBTiV-0.09 thin film capacitor measured at 100 kV/cm was 6.8 × 10⁻⁹ A/cm², which is more than two and a half orders of magnitude lower than that of the pure SBTi thin film capacitor. Furthermore, the SBTiV-0.09 thin film exhibited good fatigue endurance up to 10¹⁰ switching cycles. The improved electrical properties may be related to the reduction of internal defects such as bismuth and oxygen vacancies with changes in the grain size by doping of vanadium into SBTi.     

Ferroelectric properties of bilayer structured Pb(Zr0.52Ti0.48)O3/SrBi2Ta2O9 (PZT/SBT) thin films on Pt/TiO2/SiO2/Si substrates

Pb(Zr_0.52Ti_0.48)O₃ (PZT) thin films with large remanent polarization and SrBi₂Ta₂O₉ (SBT) thin films with excellent fatigue-resisting characteristic have been widely studied for non-volatile random access memories, respectively. To combine these two advantages_, bilayered Pb(Zr_0.52Ti_0.48)O₃/SrBi₂Ta₂O₉ (PZT/SBT) thin films were fabricated on Pt/TiO₂/SiO₂/Si substrates by chemical solution deposition method. X-ray diffraction patterns revealed that the diffraction peaks of PZT/SBT thin films were completely composed of PZT and SBT, and no other secondary phase was observed. The electrical properties of the bilayered structure PZT/SBT films have been investigated in comparison with pure PZT and SBT films. PZT/SBT bilayered thin films showed larger remanent polarization (2P_r) of 18.37 μC/cm² than pure SBT and less polarization fatigue up to 1 × 10⁹ switching cycles than pure PZT. These results indicated that this bilayered structure of PZT/SBT is a promising material combination for ferroelectric memory applications.     

Novel approach to preparation of LiMn2O4 core/LiNixMn2−xO4 shell composite

Combining two methods, coating and doping, to modify spinel LiMn₂O₄, is a novel approach we used to synthesize active material. First we coated the LiMn₂O₄ particles with the nickel oxide particles by means of homogenous precipitation, and then the nickel oxide-coated LiMn₂O₄ was calcined at 750 °C to form a LiNi_xMn_2−xO₄ shell on the surface of spinel LiMn₂O₄ particles. Scanning electron microscopy (SEM), Transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), cyclic voltammetry (CV) and charge-discharge test were performed to characterize the spinel LiMn₂O₄ before and after modification. The experimental results indicated that a spinel LiMn₂O₄ core is surrounded by a LiNi_xMn_2−xO₄ shell. The resulting composite showed excellent electrochemical cycling performance with an average fading rate of 0.014% per cycle. This improved cycle stability is greatly attributed to the suppression of Jahn-Teller distortion on the surface of spinel LiMn₂O₄ particles during cycling.     

Exchange bias in thin-film (Co/Pt)3/Cr2O3 multilayers

We have fabricated exchange-biased Co/Pt layers ((0.3 nm/1.5 nm)×3) on (0 0 1)-oriented Cr₂O₃ thin films. The multilayered films showed extremely smooth surfaces and interfaces with root mean square roughness of ≈0.3 nm for 10 μm×10 μm area. The Cr₂O₃ films display sufficient insulation with a relative low leakage current (1.17×10⁻² A/cm² at 380 MV/m) at room temperature which allowed us to apply electric field as high as 77 MV/m. We find that the sign of the exchange bias and the shape of the hysteresis loops of the out-of-plane magnetized Co/Pt layers can be delicately controlled by adjusting the magnetic field cooling process through the Néel temperature of Cr₂O₃. No clear evidence of the effect of electric field and the electric field cooling was detected on the exchange bias for fields as high as 77 MV/m. We place the upper bound of the shift in exchange bias field due to electric field cooling to be 5 Oe at 250 K.     

Surface modification of LiMn2O4 thin films at elevated temperature

In order to improve the cycle stability of spinel LiMn₂O₄ electrode at elevated temperature, the LiCoO₂-coated and Co-doped LiMn₂O₄ film were prepared by an electrostatic spray deposition (ESD) technique. LiCoO₂-coated LiMn₂O₄ film shows excellent cycling stability at 55 °C compared to pristine and Co-doped LiMn₂O₄ films. The samples were studied by X-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, cyclic voltammetry and electrochemical impedance spectroscopy. The excellent performance of LiCoO₂-coated LiMn₂O₄ film can be explained by suppression of Mn dissolution. On the other hand, the LiCoO₂-layer on the LiMn₂O₄ surface allows a homogenous Li⁺ insertion/extraction during electrochemical cycles and improves its structure stability.     

Influence of postdeposition annealing on structural properties and electrical characteristics of thin Tm2O3 and Tm2Ti2O7 dielectrics

We describe the structural properties and electrical characteristics of thin thulium oxide (Tm₂O₃) and thulium titanium oxide (Tm₂Ti₂O₇) as gate dielectrics deposited on silicon substrates through reactive sputtering. The structural and morphological features of these films were explored by X-ray diffraction, X-ray photoelectron spectroscopy, secondary ion mass spectrometry, and atomic force microscopy, measurements. It is found that the Tm₂Ti₂O₇ film annealed at 800 °C exhibited a thinner capacitance equivalent thickness of 19.8 Å, a lower interface trap density of 8.37 × 10¹¹ eV⁻¹ cm⁻², and a smaller hysteresis voltage of ∼4 mV than the other conditions. We attribute this behavior to the Ti incorporated into the Tm₂O₃ film improving the interfacial layer and the surface roughness. This film also shows negligible degrees of charge trapping at high electric field stress.     

Cathode luminescence characteristics of ZnGa2O4 phosphor thin films with the doped activator

The zincgallate (ZnGa₂O₄) phosphor thin film was grown using RF magnetron sputtering system at various process parameters. A ZnGa₂O₄ phosphor thin film was deposited on Si(1 0 0) substrate and annealed by a rapid thermal processor (RTP). The X-ray diffractometer (XRD) patterns indicate that the Mn-doped ZnGa₂O₄ phosphor thin film shows a (3 1 1) main peak and a spinel phase. A ZnGa₂O₄ phosphor thin film has better crystallization due to increased substrate, annealing temperature and deposition time. Also the ZnGa₂O₄:Mn phosphor thin film shows green emission (510 nm, ⁴T₁→⁶A₁), and the ZnGa₂O₄:Cr phosphor thin film shows red emission (705 nm, ⁴A₂→⁴T₂).     

Charge-discharge characteristics of nanocrystalline Co3O4 powders via aerosol flame synthesis

Nanocrystalline Co₃O₄ powders were synthesized by aerosol flame synthesis (AFS) method for the anode of lithium ion batteries and the basic electrochemical properties were investigated. The effects of synthesis conditions and heat-treatment temperature on the morphology, crystallite size and electrochemical properties were investigated. As-prepared soot contained Co₃O₄, CoO and Co(OH)₂, which were eventually converted into cubic spinel Co₃O₄ by post heat treatment. The as-prepared particle size was in the range of 10-30 nm and grew to 50-85 nm by the heat treatment. With growing particle size and improved crystallinity, charge-discharge capacity and cycle performance were improved and the discharge capacity of the powder heat-treated at 700 °C was 571 mAh/g after 30 cycles, which was better than Co₃O₄ powder reported in the previous literature.     

Luminescence of ZnWO4 and CdWO4 thin films prepared by spray pyrolysis

Thin films of ZnWO₄ and CdWO₄ were prepared by spray pyrolysis and the structural, optical, and luminescence properties were investigated. Both ZnWO₄ and CdWO₄ thin films showed a broad blue-green emission band. The broad band of ZnWO₄ films was centered at 495 nm (2.51 eV) consisted of three bands at 444 nm (2.80 eV), 495 nm (2.51 eV) and 540 nm (2.30 eV). The broad band of CdWO₄ films at 495 nm (2.51 eV) could be decomposed to three bands at 444 nm (2.80 eV), 495 nm (2.51 eV) and 545 nm (2.28 eV). These results are consistent with emission from the WO₆⁶⁻ molecular complex. The luminance and efficiency for ZnWO₄ film at 5 kV and 57 μA/cm² were 48 cd/m² and 0.22 lm/w, respectively, and for CdWO₄ film the values were 420 cd/m² and 1.9 lm/w.     

Electrical properties of La2O3 thin films grown on TiN/Si substrates via atomic layer deposition

The electrical as well as the structural properties of La₂O₃ thin films on TiN substrates were investigated. Amorphous stoichiometric La₂O₃ thin films were grown at 300 °C via atomic layer deposition technique by using lanthanum 2,2,6,6-tetramethyl-3,5-heptanedione [La(TMHD)₃] and H₂O as precursors. Post-annealing of the grown film induced dramatic changes in structural and the electrical properties. Crystalline phases of the La₂O₃ film emerged with the increase of the post-annealing temperature. Metal-insulator-metal (MIM) capacitor was fabricated to measure the electrical properties of the grown film. The dielectric constant of the La₂O₃ thin films increased with annealing temperature to reach the value of 17.3 at 500 °C. The leakage current density of the film post-annealed at 400 °C was estimated to be 2.78 × 10⁻¹⁰ and 2.1 × 10⁻⁸ A/cm² at ±1 V, respectively.     

Laser synthesis of thin layers of In4Se3, In4Te3 and modification of their structure and characteristics

Trends of structural modifications and phase composition occurring in In₄Se₃ thin films and In₄Se₃-In₄Te₃ epitaxial heterojunctions under laser irradiations have been investigated. Dynamics of the layer structure modification, depending on laser modes, i.e. pulse duration τ = 2-4 ms, irradiation intensity I₀ = 10-50 kW/cm², number of pulses N = 5-50, was studied by electron microscopy. An increase in laser influence promotes enlargement of the layer grains and transformation of their polycrystalline structure towards higher degree of stoichiometry. As a result of laser solid restructuring heterojunctions of In₄Se₃-In₄Te₃, being photosensitive within 1.0-2.0 μm and showing fast time of response, have been obtained. Laser modification of structure enables one to optimize electrical and optical properties of functional elements on the base of thin films and layers of In₄Se₃, In₄Te₃, widely used as infrared detectors and filters.     

Characterization of crystallized LiMn2O4 thin films grown by pulsed laser deposition

LiMn₂O₄ thin films were grown on stainless steel substrates at 625°C and 100?mTorr of oxygen by pulsed laser deposition. The deposited film was highly crystallized with an average crystal size of about 260?nm. The initial discharge capacity of the film was about 53.8?µAh?cm^?2?µm^?1 and the capacity decayed at an average rate of about 0.29% per cycle when the film was cycled between 3.0 and 4.5?V vs. Li/Li⁺, with a current density of 20?µA?cm^?2. It was observed that the grains became smaller and the boundaries of grains became obscure after 100 cycles, indicating that manganese dissolution via loss of MnO may be the main factor leading to the capacity fade in pure thin film LiMn₂O₄ electrodes. The apparent diffusion coefficient of Li ions, obtained from cyclic voltammetry scans, was of the order of 10^?12?cm²?s^?1. High charge-transfer resistance was observed at high potentials. Ex-situ X-ray diffraction (XRD) and Raman spectroscopy were used to investigate the structure changes of LiMn₂O₄ thin film with intercalation/de-intercalation of lithium. XRD results revealed a relatively small lattice change with the removal of lithium in crystallized thin film, compared to that of powder LiMn₂O₄ cathode.     

Microstructures and multiferroic properties of textured Bi0.8La0.2FeO3 thin films

La-substituted BiFeO₃, Bi_0.8La_0.2FeO₃, thin films were fabricated on Pt/Ti/SiO₂/Si substrates by pulsed laser deposition. X-ray diffraction and high-resolution transmission electron microscope were used to analyze the structures of the films. The results show the films fabricated under optimized growth condition are (0 1 2) textured. X-ray photoemission spectroscopy results indicate that the oxidation state of Fe ion is Fe³⁺ in the films without detectable Fe²⁺. The films show low leakage current and excellent dielectric characters. Multiferroic properties with a remnant ferroelectric polarization of 5.2 μC/cm² and a remanent magnetization of 0.02 μ_B/Fe were established. These results have some implications for further research.