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1.
当入射电磁波频率与金属微纳米结构中自由电子的集体振荡频率相当时,金属微纳米结构中激发表面等离激元共振,其共振电磁场被强束缚在亚波长尺度以下界面附近,使其具备极大的电磁场局域能力.这一效应可以极大程度地增强电磁波与物质的相互作用,在金属表面等离激元耦合体系中尤为明显.本文简述了表面等离激元耦合效应、模式耦合理论以及对应的结构耦合体系.另外,还介绍了一类典型耦合体系在光谱增强中的重要应用,主要包括增强折射率传感、表面增强红外吸收、表面增强拉曼散射、表面增强光学非线性效应等. 相似文献
2.
Off-stoichiometry indexation of BiFeO_3 thin film on silicon by Rutherford backscattering spectrometry 下载免费PDF全文
BiFeO_3 is a multiferroic material with physical properties very sensitive to its stoichiometry.BiFeO_3 thin films on silicon substrate are prepared by the sol–gel method combined with layer-by-layer annealing and final annealing schemes.X-ray diffraction and scanning electron microscopy are employed to probe the phase structures and surface morphologies.Using Rutherford backscattering spectrometry to quantify the nonstoichiometries of BiFeO_3 thin films annealed at 100?C–650?C.The results indicate that Bi and Fe cations are close to the stoichiometry of BiFeO_3,whereas the deficiency of O anions possibly plays a key role in contributing to the leakage current of 10~(-5) A/cm~2 in a wide range of applied voltage rather than the ferroelectric polarizations of BiFeO_3 thin films annealed at high temperature. 相似文献
3.
Surface Structure and Electronic Property of InP(001)-(2×1)S Surface: A First-Principles Study 下载免费PDF全文
The surface structure and electronic property of InP(001)-(2 ×1)S surface under S-rich condition are investigated based on first-principles simulations. The analyses of phase transition show that the 3B model is the most stable structure and the S-S dimer is difficult to form. The geometry of the 3B structure agrees well with the experiments. It is also found that the 3B structure has a good passivation with a band gap of about 1.24eV. The results indicate that the 3B structure is the best candidate for the sulfur-rich InP(001)(2 × 1)A phase. 相似文献
4.
利用溶胶凝胶方法在石英玻璃衬底上制备了ZnO薄膜,将能量56 keV、剂量1×1017 cm-2的Zn离子注入到薄膜中。离子注入后,薄膜在500~900 ℃的氩气中退火,利用X射线衍射谱、光致发光谱和光吸收谱研究了离子注入和退火对ZnO薄膜结构和光学性质的影响。结果显示:衍射峰在约700 ℃退火后得到恢复;当退火温度小于600 ℃时,吸收边随着退火温度的提高发生蓝移,超过600 ℃时,吸收边随着退火温度的提高发生红移;近带边激子发光和深能级缺陷发光都随退火温度的提高而增强。 相似文献
5.
Enhancement of photoluminescence in Sr2CeO4 phosphors by doping with non-rare earth impurities 下载免费PDF全文
Non-rare earth impurity doped Sr 2 CeO 4:X (X=Zn,Hg,Al,Ag,Cr) phosphors are prepared by using the combustion method.The structural and photoluminescent properties of the as-prepared phosphors are investigated by X-ray diffraction (XRD) and photoluminescence at room temperature.Experimental results show that zinc addition and firing processing can effectively enhance the photoluminescence of Sr 2 CeO 4 phosphors. 相似文献
6.
Lithium/Silver-Doped Cu_2ZnSnS_4 with Tunable Band Gaps and Phase Structures: a First-Principles Study 下载免费PDF全文
Doping is an effective approach for improving the photovoltaic performance of Cu_2 ZnSnS_4(CZTS). The doping by substitution of Cu atoms in CZTS with Li and Ag atoms is investigated using density functional theory. The results show that the band gaps of Li_(2 x)Cu_(2(1-x))ZnSnS_4 and Ag_(2 x)Cu_(2(1-x))ZnSnS4 can be tuned in the ranges of 1.30-3.43 and 1.30-1.63 eV, respectively. The calculation also reveals a phase transition from kesterite to wurtzite-kesterite for Li_(2 x)Cu_(2(1-x))ZnSnS_4 as x is larger than 0.9. The tunable band gaps of Li_(2 x)Cu_(2(1-x))ZnSnS_4 and Ag_(2 x)Cu_(2(1-x)) ZnSnS_4 make them beneficial for achieving band-gap-graded solar cells. 相似文献
7.
采用溶胶凝胶法在(0001)Al2O3衬底上制备了不同掺杂原子分数的ZnO:Al薄膜,在Ar气氛中进行了600~950 ℃不同温度的退火处理,研究了掺杂原子分数和退火温度对薄膜光致发光、光吸收和透射的影响。结果显示,薄膜的紫外峰强度随掺杂原子分数和退火温度的提高而增强,与缺陷相关的绿光强度却随着掺杂原子分数和退火温度的提高而降低;薄膜光学带隙随掺杂原子分数的提高从3.21 eV增大到3.25 eV;光吸收在可见光区随着退火温度的升高而增大,在紫外区却随着退火温度的升高而减小,透射与吸收的变化规律相反;薄膜吸收边随退火温度的升高出现轻微的红移。 相似文献
8.
Effects of high-dose Ge ion implantation and post-implantation annealing on ZnO thin films 下载免费PDF全文
This paper reports that ion implantation to a dose of 1 ×10^17 ions/cm^2 was performed on c-axis-orientated ZnO thin films deposited on (0001) sapphire substrates by the sol-gel technique. After ion implantation, the as-implanted ZnO films were annealed in argon ambient at different temperatures from 600 - 900 ℃. The effects of ion implantation and post-implantation annealing on the structural and optical properties of the ZnO films were investigated by x-ray diffraction (XRD), photoluminescence (PL). It was found that the intensities of (002) peak and near band edge (NBE) exitonic ultraviolet emission increased with increasing annealing temperature from 600- 900 ℃. The defect related deep level emission (DLE) firstly increased with increasing annealing temperature from 600 - 750 ℃, and then decreased quickly with increasing annealing temperature. The recovery of the intensities of NBE and DLE occurs at ~850℃ and ~750℃ respectively. The relative PL intensity ratio of NBE to DLE showed that the quality of ZnO films increased continuously with increasing annealing temperature from 600 - 900 ℃. 相似文献
9.
N-ion-implantation to a fluence of 1×1015ions/cm2was performed on ZnS thin films deposited on glass substrates by using the vacuum evaporation method. The films were annealed in flowing nitrogen at 400?C–500?C after N-ionimplantation to repair the ion-beam-induced structural destruction and electrically activate the dopants. Effects of ionimplantation and post-thermal annealing on ZnS films were investigated by X-ray diffraction(XRD), photoluminescence(PL), optical transmittance, and electrical measurements. Results showed that the diffraction peaks and PL intensities were decreased by N-ion-implantation, but fully recovered by further annealing at 500?C. In this experiment, all films exhibited high resistivity due to the partial dopant activation under 500?C. 相似文献
10.
Preparation of p-type ZnO:(Al, N) by a combination of sol--gel and ion-implantation techniques 下载免费PDF全文
We report the preparation of p-type ZnO thin films on (0001)
sapphire substrates by a combination of sol--gel and
ion-implantation techniques. The results of the Hall-effect
measurements carried out at room temperature indicate that the
N-implanted ZnO:Al films annealed at 600\du\ have converted to
p-type conduction with a hole concentration of
$1.6\times1018cm-3, a hole mobility of
3.67cm2/V.s and a minimum resistivity of
4.80cm.\Omega$. Ion-beam induced damage recovery has been
investigated by x-ray diffraction (XRD), photoluminescence (PL) and
optical transmittance measurements. Results show that diffraction
peaks and PL intensities are decreased by N ion implantation, but
they nearly recover after annealing at 600\du. Our results
demonstrate a promising approach to fabricate p-type ZnO at a low
cost. 相似文献