| 用SCLC法研究低k多孔SiO2:F薄膜的隙态密度 |
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| 引用本文： | 缑 洁,何志巍,潘国辉,王印月.用SCLC法研究低k多孔SiO2:F薄膜的隙态密度[J].物理学报,2006,55(6):2936-2940. |
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| 作者姓名： | 缑 洁 何志巍 潘国辉 王印月 |
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| 作者单位： | 兰州大学物理系，兰州 730000;兰州大学物理系，兰州 730000;兰州大学物理系，兰州 730000;兰州大学物理系，兰州 730000 |
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| 基金项目： | 国家自然科学基金(批准号：50272027)资助的课题. |
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| 摘 要： | 用溶胶-凝胶法制备了低k多孔SiO2:F薄膜，用空间电荷限制电流法(SCLC)研究了多孔SiO2:F薄膜中的隙态密度以及掺F量对隙态密度的影响，得到了平衡费米能级附近的隙态密度约为7×1015cm-3·eV-1，以及带隙中隙态随能量的分布. 并对造成隙态的主要原因也进行了讨论.
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| 关 键 词： | 隙态密度， SCLC， 多孔SiO2:F， 低k |
| 文章编号： | 1000-3290/2006/55（06）/2936-05 |
| 收稿时间： | 11 28 2005 12:00AM |
| 修稿时间： | 2005-11-282005-12-09 |
Density of defect states in low-k porous SiO2:F film researched by SCLC method |
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| Gou Jie,He Zhi-Wei,Pan Guo-Hui and Wang Yin-Yue.Density of defect states in low-k porous SiO2:F film researched by SCLC method[J].Acta Physica Sinica,2006,55(6):2936-2940. |
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| Authors: | Gou Jie He Zhi-Wei Pan Guo-Hui and Wang Yin-Yue |
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| Abstract: | The porous fluorine doped silica (SiO2:F) films were prepared by sol-gel method. The densities of the states (DOS) of the SiO2:F films and the effect of the dose of the F dopant were studied by space charge limited current(SCLC) techniques. Distribution of defect states N(E) in the vicinity of Fermi level in SiO2:F films was determined to be about 7×1015cm-3·eV-1. The dangling bounds on the surface of the porous film were the primary cause of the DOS. |
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| Keywords: | density of states SCLC porous SiO2:F low k |
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