La2/3Ca1/3MnO3薄膜的光致电阻率变化特性

射频磁控溅射法制备了La_2/3Ca_1/3MnO₃纳米薄膜(LCMO).该薄膜发生FM-PM相变的转变点温度为T_c≈308K（近似为电阻峰值温度T_p）；在不同温度下的光电导性质实验表明所制备的LCMO薄膜在连续激光作用时低温段（Tc）表现为光致电阻率增大效应，即ΔR/R＞0，并在R-T曲线拐点附近取得极大值，（ΔR/R）_max=43.5%；当T>T关键词： 钙钛矿薄膜 光响应 电子自旋 小极化子     

缺氧La0.6Ca0.4MnO3-δ薄膜的光响应特性

采用波长均为532 nm的连续激光和脉冲激光研究了缺氧La0.6Ca0.4MnO3-δ(LCMO)薄膜的光响应特性。分析了在金属态和绝缘态时,缺氧对LCMO薄膜光响应的不同影响。在脉冲宽度7 ns、峰值功率750 mW的脉冲激光作用下,缺氧LCMO薄膜在室温下呈现出明显的光响应信号,其光电导增大36.4%,上升时间约30 ns。由于光子能量大于LCMO的禁带宽度,光子注入在薄膜中产生了电子-空穴对,而电子很容易被氧空位俘获,从而在薄膜中产生大量额外的空穴载流子,大量的空穴载流子可能诱发局域绝缘-金属相变,从而在薄膜中产生明显的光电导效应。实验显示出缺氧钙钛矿薄膜在光电器件上的巨大应用潜力。     

La0．85Sr0．015MnO3—δ／Fe异质结构的瞬间光电导研究

采用磁控溅射的方法在Si基片上制备了La0.85Sr0.015MnO3-δ/Fe异质结构,对所制备结构中La0.85Sr0.015MnO3-δ薄膜的输运及光诱导特性进行了分析,表明薄膜在整个测量的温度区间内呈现金属一半导体相变,相变温度为130K.在低温金属相,磁场作用导致电阻减小,而高温半导体相则使电阻增大;激光辐照导致样品电阻减小,并产生瞬间光电导效应,即随着激光的关闭电阻瞬间恢复到原值,其相对变化值随着温度的降低而增大,并在温度为80K时达到极大值约1660%,分析认为该瞬态光电导效应可能与薄膜本身的氧缺陷有关.     

Fe3O4薄膜的电输运及光诱导特性研究

用脉冲激光沉积法在(111)Si衬底上成功制备了高度择优取向的Fe₃O₄薄膜.电阻-温度关系表明Fe₃O₄薄膜的Verwey转变(T_V)约在122 K,低温段(T_V)输运特征满足Mott变程跳跃模型,高温段(T>T_V)为小极化子输运.激光作用下的光电导实验发现,在整个温区表现为光致电阻率减小,而且低温段的电阻变化率比高温段要大很多.分析认为Fe₃O₄薄膜的光致电阻率变化主要与激光激发t_2g电子的转移有关. 关键词： 3O₄薄膜')" href="#">Fe₃O₄薄膜 小极化子 光诱导特性     

微纳米加工技术对La2/3Ca1/3MnO3材料性能影响的研究

利用脉冲激光沉积(PLD)方法制备了La2/3Ca1/3MnO3(LCMO)外延薄膜.然后利用微纳米加工技术对LCMO薄膜材料进行了局部改造,制造出宽度仅为83纳米的弱联接结构,并对此进行了一系列的物性改变研究.发现在测量电流不变(1μA)的情况下,R～T曲线在120K附近有一个尖锐的跳变,跳变的温度区间很窄.此外,测量电流和外加磁场的增加,都能对跳变现象产生抑制作用.目前认为这种现象的产生是由于相分离的原因导致的.     

锰位铁掺杂La0.67Sr0.33FexMn1-xO3薄膜的光诱导效应

分别采用溶胶-凝胶法和脉冲激光沉积的方法制备了La0.67Sr0.33FexMn1-xO3(x=0, 0.05, 0.10, 0.15)系列块材和薄膜,研究了Fe部分替代对La0.67Sr0.33FexMn1-xO3薄膜输运和光诱导特性的影响.研究表明,随着Fe含量的增加,薄膜的峰值转变温度下降,导电性降低.在激光作用下,薄膜在TTP)则减小,随着Fe掺杂量的增加,光致电阻相对变化极值增加,当x=0.15时,光致电阻变化率极大值达到38%.并从晶格效应的角度讨论了光诱导薄膜电阻率变化的内在机理.     

BaTiO3/p-Si异质结的整流特性和光诱导特性的研究

利用脉冲激光沉积法成功制备了BaTiO₃/p-Si异质结, 该异质结在80–300 K 显示出了良好的整流特性和光诱导特性. 开启电压随着温度的升高而逐渐降低. 利用不同频率的光子辐照样品, 观察到明显的光电导效应. 且随着照射光子能量的增大, 结电流也相应变大, 光诱导效应越明显. BaTiO₃薄膜电阻-温度(R-T) 曲线显示氧缺陷条件下BaTiO₃薄膜具有良好的半导体特性. 关键词： 异质结 光诱导效应 3薄膜')" href="#">BaTiO₃薄膜     

对靶溅射技术制备的La2/3Ca1/3MnO3/YBa2Cu4O8/La2/3Ca1/3MnO3薄膜中Tc的降低

本文用对靶溅射技术制备了La2/3Ca1/3MnO3/YBa2Cu4O8/La2/3Ca1/3MnO3薄膜.与YBCO单层薄膜相比,由于超导/铁磁系统中的磁性邻近效应,三层薄膜表现出较低的超导转变温度.薄膜的R～T测量曲线显示出超磁阻(CMR)效应和超导转变,预示着超导和铁磁特性共存于LCMO/YBCO/LCMO三文治结构.     

Cu掺杂La0.67Sr0.33CuxMn1-xO3薄膜的光诱导效应研究

分别采用溶胶-凝胶和射频磁控溅射的方法制备了La_0.67Sr_0.33Cu_xMn_1-xO₃（x=0.05, 0.10和0.15）系列块材和薄膜,研究了Cu部分替代对薄膜光诱导特性的影响.实验结果表明随着Cu掺杂量的增加,薄膜的金属-绝缘转变温度向低温方向移动,且导电性降低.在金属相激光作用诱导电阻增大.光致电阻相对变化极大值随着Cu含量的增加而增大,当 关键词： 锰氧化物 光诱导 Cu掺杂 晶格效应     

用SiCl4/H2气源沉积多晶硅薄膜光照稳定性的研究

对以SiH₄/H₂及SiCl₄/H₂为源气体、采用 等离子体增强化学气相沉积技术制备的非晶硅薄膜和多晶硅薄膜进行了光照稳定性的研究.实验表明，制备的多晶硅薄膜并没有出现 非晶硅中的光致衰减现象，其光电导、暗电导在光照过程中没有下降反而有所上升且电导率 变化快慢受氢稀释度的制约.多晶硅薄膜的光照稳定性可能来源于高的晶化度及Cl元素的存在. 关键词： 多晶硅薄膜 稳恒光电导效应 晶界 光致衰退效应     

Physical properties of BaMg1/3Nb2/3O3-BaCo1/3Nb2/3O3 solid solutions

Structural, electric and magnetic properties of Ba₃Mg_1−xCo_xNb₂O₉ based dielectric ceramic compounds have been studied. The samples, prepared by a solid state reaction method, were characterised by X-ray powder diffraction (XRPD), electron microscopy (SEM), dielectric (ε(T)) and magnetic measurements (χ⁻¹(T)). The XRPD analyses showed that the crystal structure of these compounds does change by the increase of substitution degree, passing from a superstructure hexagonal-type, (no. 164), space group (SG) to a simple structure cubic-type, (no. 221), SG. However, the evolution of the elementary unit cell lattice parameter can be followed and it exhibit a linear increasing tendency with increase in the substitution, indicating the existence of a solid solution through out the investigated range of substitution (0-1). The microstructure analysis shows a variation in the grain size and also the porosity of the samples with the degree of substitution. The results are in good agreement with that of dielectric measurements, which also showed that the dielectric constant (ε) increases with the increase of cobalt content. The magnetic characterization of cobalt substituted samples showed an antiferromagnetic type super-exchange interaction between these magnetic ions. At the same time, the values of effective magnetic momentum (μ_eff) are close to the value that corresponds to Co²⁺ free ions. The study highlights the possibility of modelling these materials by substitutions, in order to improve properties of negative-positive-zero (NPO) type dielectric applications.     

La0.67Ca0.33MnO3薄膜皮秒光电效应

在1064 nm波长脉冲激光（脉宽25 ps）的照射下，钙钛矿氧化物薄膜La0.67Ca0.33MnO3/SrTiO3具有超快光电效应，对激光脉冲显示ps量级的响应时间，上升沿响应时间300 ps，半高宽700 ps，同时，对激光能量的响应灵敏度为500 mV/mJ。     

Temperature-dependent photoluminescence in La2/3Ca1/3MnO3

Visible photoluminescence and its temperature dependence of La_2/3Ca_1/3MnO₃ in the temperature range 138-293 K were measured. It was observed that the main broad band centered at ∼1.77 eV with the shoulders at ∼1.57 and ∼1.90 eV existed in the entire temperature range. It can be well fitted by three Gaussian curves B₁, B₂ and B₃ centered at ∼1.52, ∼1.75 and ∼1.92 eV, respectively. The intensities of the peak B₁ and B₂ vary as temperature increases. In the entire temperature range, the intensity of B₁ increases with increasing temperature, whereas that of B₂ decreases. The photoluminescence mechanisms for La_2/3Ca_1/3MnO₃ are presented based on the electronic structures formed by the interactions among spin, charge and lattice, in which B₁ was identified with the charge transfer excitation of an electron from the lower Jahn-Teller split e_g level of a Mn³⁺ ion to the e_g level of an adjacent Mn⁴⁺ ion, B₂ is assigned to the transition between the spin up and spin down e_g bands separated by Hund's coupling energy E_J and B₃ is attributed to the transition, determined by the crystal field energy E_C, between a t_2g core electron of Mn³⁺ to the spin up e_g bands of Mn⁴⁺ by a dipole allowed charge transfer process.     

Giant dielectric relaxation in SrTiO3-SrMg1/3Nb2/3O3 and SrTiO3-SrSc1/2Ta1/2O3 solid solutions

Ceramic samples of (1−x)SrTiO₃-xSrMg_1/3Nb_2/3O₃ and (1−x)SrTiO₃-xSrSc_1/2Ta_1/2O₃ were prepared, and their dielectric properties were studied at x=0.005–0.15 and 0.01–0.1, respectively, at frequencies 10 Hz–1 MHz and at temperatures 4.2–350 K. A giant dielectric relaxation was observed in the temperature range 150–300 K, and not so strong but well-developed relaxation was found in the temperature range 20–90 K. The activation energy U and the relaxation time τ₀ were determined to be 0.21–0.3 eV and from 10⁻¹¹ to 10⁻¹² s for the high-temperature relaxation and 0.01–0.02 eV and 10⁻⁸–10⁻¹⁰ s for the low-temperature relaxation, respectively. The additional local charge compensation of the heterovalent impurities Mg²⁺ and Nb⁵⁺ (or Sc³⁺ and Ta⁵⁺) by free charge carriers or the host ion vacancies is suggested to be the underlying physical mechanism of the relaxation phenomena. On the basis of this mechanism, the Maxwell-Wagner model and the model of reorienting dipole centers Mg²⁺ (or Sc³⁺) associated with the oxygen vacancy are proposed to explain the high-temperature relaxation with some arguments in favor of the latter model. The polaron-like model with the Nb⁵⁺-Ti³⁺ center is suggested as the origin of the low-temperature relaxation. The reasons for the absence of ferroelectric phase transitions in the solid solutions under study are also discussed. From Fizika Tverdogo Tela, Vol. 44, No. 11, 2002, pp. 1948–1957. Original English Text Copyright ? 2002 by Lemanov, Sotnikov, Smirnova, Weihnacht. This article was submitted by the authors in English.     

Polarization characteristics of the relaxor ceramics of multicomponent system with PbNb2/3Zn1/3O3, PbNb2/3Mg1/3O3, and PbTiO3

The phenomenon of dielectric hysteresis in the relaxor ceramics of multicomponent system with PbNb_2/3Zn1/₃O₃, PbNb_2/3Mg_1/3O₃, PbTiO₃ has been studied. The influence of different modifiers on polarization characteristics is examined and the correlations of these properties with the phase and chemical composition of the ceramics are investigated. The results obtained can be used to predict relaxor properties.     

La2/3Ca1/3MnO3/Eu2CuO4/La2/3Ca1/3MnO3磁性隧道结的制备与表征

采用磁控溅射，紫外线光刻和离子束刻蚀制备了La_2/3Ca_1/3MnO₃/Eu₂CuO₄/La_2/3Ca_1/3MnO₃磁性隧道结.通过对获得的磁性隧道结的I-V特性测量，发现非线性的I-V特性，显示结样品的隧穿特性.有趣的是发现在电极材料La_2/3Ca_1/3MnO₃的金属-绝缘体转变温度(Tp)以下，I-V曲线出现一个跳变.随着温度降低，开始出现跳变的临界电流增大，但是跳变都发生在同样的电压下～209mV.当电流增大或减小在跳变点附近出现回滞.这一跳变只发生在铁磁金属态，表明这是一个磁性相关联的效应，可能对应一种新的磁性开关过程.虽然，目前对这一现象背后的物理机理还不清楚，但是，这一现象有可能在未来自旋电子学器件方面具有潜在的应用价值. 关键词： 庞磁电阻 磁性隧道结 开关效应     

E-T phase diagrams of a solid solution of the multicomponent PbZn1/3Nb2/3O3-PbMg1/3Nb2/3O3-PbNi1/3Nb2/3O3-PbTiO3 system near the morphotropic phase boundary

The specific features of the dielectric and pyroelectric responses of a solid solution in the barium-doped multicomponent yPbZn_1/3Nb_2/3O₃-mPbMg_1/3Nb_2/3O₃-nPbNi_1/3Nb_2/3O₃-xPbTiO₃ system of the composition y = 0.0982, m = 0.4541, n = 0.1477, and x = 0.3 near the morphotropic phase boundary have been investigated. It has been assumed that the maxima revealed in the dependences of the reversible permittivity on the electric field strength with both the forward and backward changes in the field (E ₌) are associated with the induced phase transition. Based on the experimental results, the E-T phase diagrams are constructed in the temperature range from ?100 to 150°C for different temperature-field regimes: (i) variation in the electric field E ₌ at a fixed temperature of the sample and (ii) variation in the temperature of the sample at a constant value of E ₌. It has been found that there is a singular point in the E-T phase diagram and that, in the vicinity of this point, the dielectric and pyroelectric responses of the studied ceramics exhibit specific features.     

Spin-polarized tunneling in nanostructured La2/3Sr1/3MnO3

We present magnetic and transport properties of nanocrystalline La_2/3Sr_1/3MnO₃ powders prepared by a gel-combustion method using citric acid as the fuel. The coercive magnetic field H_c is significantly different to the field H_c^* for which the magnetoresistance (MR) is maximum. The MR at low fields (LFMR) exhibits a power-law dependence with magnetization, MR∝Mⁿ, with n=2.5–3.3 for temperatures ranging from 5 to 200 K. The results are discussed in terms of a distribution of particle size in our sample.     

Electric and magnetic behaviour in double doped La2/3＋4x/3Sr1/3-4x/3Mn1-xMgxO3

The double-doped La2/3＋4x/3Sr1/3-4x/3Mn1-xMgxO3 samples with fixed Mn^3＋/Mn^4＋ ratio equal to 2/1 are investigated by means of magnetism and transport measurements. Phase separation is observed at temperature higher than T^onset c for x = 0.10 and 0.15. For x = 0.10, rather strong phase separation induces drastic magnetic random potential and results in the localization of carriers. Thus, the varlable-range hopping process dominates. For other samples, there is no or only weak phase separation above T^onset c. Thus, thermal activation mechanism is responsible for the high temperature transport behaviour. For x = 0.20 and 0.25, unexpected AFM behaviour is observed at low temperature. All these results are well understood by considering the special role of the ＂double-doping＂.