| Electric and magnetic behaviour in double doped La2/3＋4x/3Sr1/3-4x/3Mn1-xMgxO3 |
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| 引用本文： | 屈哲,皮雳,樊济宇,谭舜,张贝,张锰,张裕恒.Electric and magnetic behaviour in double doped La2/3＋4x/3Sr1/3-4x/3Mn1-xMgxO3[J].中国物理 B,2007,16(1):258-265. |
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| 作者姓名： | 屈哲 皮雳 樊济宇 谭舜 张贝 张锰 张裕恒 |
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| 作者单位： | Structure Research Laboratory, University of Science and Technology of China, Hefei 230026, China;Structure Research Laboratory, University of Science and Technology of China, Hefei 230026, China;Structure Research Laboratory, University of Science and Technology of China, Hefei 230026, China;Structure Research Laboratory, University of Science and Technology of China, Hefei 230026, China;Structure Research Laboratory, University of Science and Technology of China, Hefei 230026, China;Structure Research Laboratory, University of Science and Technology of China, Hefei 230026, China;Structure Research Laboratory, University of Science and Technology of China, Hefei 230026, China |
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| 基金项目： | Project
supported by the National Natural Science Foundation of China (Grant
Nos 10504029
and 10334090), and the State Key Project of Fundamental Research, China
(Grant No 001CB610604). |
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| 摘 要： | The double-doped La2/3＋4x/3Sr1/3-4x/3Mn1-xMgxO3 samples with fixed Mn^3＋/Mn^4＋ ratio equal to 2/1 are investigated by means of magnetism and transport measurements. Phase separation is observed at temperature higher than T^onset c for x = 0.10 and 0.15. For x = 0.10, rather strong phase separation induces drastic magnetic random potential and results in the localization of carriers. Thus, the varlable-range hopping process dominates. For other samples, there is no or only weak phase separation above T^onset c. Thus, thermal activation mechanism is responsible for the high temperature transport behaviour. For x = 0.20 and 0.25, unexpected AFM behaviour is observed at low temperature. All these results are well understood by considering the special role of the ＂double-doping＂.
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| 关 键 词： | 钙钛矿型结构 水锰矿 相位分离 掺杂 电学性能 磁性能 |
| 收稿时间： | 2006-03-28 |
| 修稿时间： | 2006-03-282006-06-13 |
Electric and magnetic behaviour in double doped La2/3+4x/3Sr1/3-4x/3Mn1-xMgxO3 |
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| Qu Zhe,Pi Li,Fan Ji-Yu,Tan Shun,Zhang Bei,Zhang Meng and Zhang Yu-Heng.Electric and magnetic behaviour in double doped La2/3+4x/3Sr1/3-4x/3Mn1-xMgxO3[J].Chinese Physics B,2007,16(1):258-265. |
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| Authors: | Qu Zhe Pi Li Fan Ji-Yu Tan Shun Zhang Bei Zhang Meng and Zhang Yu-Heng |
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| Institution: | Structure Research Laboratory, University of Science andperovskite manganites, double doping, phase separation, variable-range hopping mechanism Technology of China, Hefei 230026, China |
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| Abstract: | The double-doped
La2/3+4x/3Sr1/3-4x/3Mn1-xMgxO3 samples with
fixed Mn3+/Mn4+ ratio equal to 2/1 are investigated by
means of magnetism and transport measurements. Phase separation is
observed at temperature higher than Tconset for
x=0.10 and 0.15. For x=0.10, rather strong phase separation
induces drastic magnetic random potential and results in the
localization of carriers. Thus, the variable-range hopping process
dominates. For other samples, there is no or only weak phase
separation above Tconset. Thus, thermal activation
mechanism is responsible for the high temperature transport
behaviour. For x=0.20 and 0.25, unexpected AFM behaviour is
observed at low temperature. All these results are well understood by
considering the special role of the ``double-doping". |
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| Keywords: | perovskite manganites double doping phase separation variable-range hopping mechanism |
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