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La2/3Ca1/3MnO3/Eu2CuO4/La2/3Ca1/3MnO3磁性隧道结的制备与表征
引用本文:唐为华,李培刚,L. H. Li,J. Gao.La2/3Ca1/3MnO3/Eu2CuO4/La2/3Ca1/3MnO3磁性隧道结的制备与表征[J].物理学报,2005,54(1):291-294.
作者姓名:唐为华  李培刚  L. H. Li  J. Gao
作者单位:(1)Department of Physics,University of Rhode Island,Kingston,RI 02881,USA; (2)香港大学物理系,香港,中国; (3)中国科学院物理研究所,北京凝聚态物理国家实验室,北京 100080; (4)中国科学院物理研究所,北京凝聚态物理国家实验室,北京 100080;香港大学物理系,香港,中国
基金项目:中国科学院百人计划基金资助的课题.
摘    要:采用磁控溅射,紫外线光刻和离子束刻蚀制备了La2/3Ca1/3MnO3/Eu2CuO4/La2/3Ca1/3MnO3磁性隧道结.通过对获得的磁性隧道结的I-V特性测量,发现非线性的I-V特性,显示结样品的隧穿特性.有趣的是发现在电极材料La2/3Ca1/3MnO3的金属-绝缘体转变温度(Tp)以下,I-V曲线出现一个跳变.随着温度降低,开始出现跳变的临界电流增大,但是跳变都发生在同样的电压下~209mV.当电流增大或减小在跳变点附近出现回滞.这一跳变只发生在铁磁金属态,表明这是一个磁性相关联的效应,可能对应一种新的磁性开关过程.虽然,目前对这一现象背后的物理机理还不清楚,但是,这一现象有可能在未来自旋电子学器件方面具有潜在的应用价值. 关键词: 庞磁电阻 磁性隧道结 开关效应

关 键 词:庞磁电阻  磁性隧道结  开关效应
收稿时间:2004-03-12
修稿时间:5/8/2004 12:00:00 AM

Fabrication and characterization of La2/3Ca1/3MnO3/Eu2CuO4/ La2/3Ca1/3MnO3 magnetic tunneling junctions
Tang Wei-Hu,Li Pei-Gang,Li L. H. and Gao J..Fabrication and characterization of La2/3Ca1/3MnO3/Eu2CuO4/ La2/3Ca1/3MnO3 magnetic tunneling junctions[J].Acta Physica Sinica,2005,54(1):291-294.
Authors:Tang Wei-Hu  Li Pei-Gang  Li L H and Gao J
Abstract:Magnetic tunneling junctions of La2/3Ca1/3MnO3/Eu2CuO4/ La2/3Ca1/3MnO3 have been fabricated by RF-magnetron sputtering, photolithography and ion beam etching. Tunneling effect was observed in these junctions by measuring their I-V curves. Interestingly, a discontinuity was observed in the I-V curves below the metal-insulator transition temperature (Tp) of La2/3Ca1/3MnO3 By changing temperatures, the discontinuity in I-V curves happens at the same voltage of 209mV, but starts at different currents. The discontinuity starting current (Ic) decreases with increasing temperature. There is a hysteresis near the discontinuity when the current increases and decreases. The discontinuity in I-V curves could indicate a novel switching process. This switching phenomenon occurs only in the ferromagnetic metal state and strongly suggesting a magnetic related effect. The physics of the switching process has not been understood yet, but it could be of interest for potential applications in spintronic devices.
Keywords:colossal magnetoresistance  magnetic tunneling junction  switching effect  
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