La2/3Ca1/3MnO3薄膜的光致电阻率变化特性

射频磁控溅射法制备了La2/3Ca1/3MnO3纳米薄膜(LCMO).该薄膜发生FM-PM相变的转变点温度为Tc≈308K(近似为电阻峰值温度Tp);在不同温度下的光电导性质实验表明所制备的LCMO薄膜在连续激光作用时低温段(TTc时,ΔR/R＜0,即光电导效应.调制激光脉冲光响应实验发现,光致信号强度和温度及偏置电流之间存在非线性关系:光致电阻率增大信号极大值为偏置电流的二次函数,而极大值对应的温度和偏置电流成线性关系,同时,光响应有一个截止温度,并且存在最佳光响应偏置电流和温度条件.分析认为LCMO薄膜的光致电阻率变化特性和材料的eg↓自旋电子的状态以及与此相应的小极化子的形成有关.     

La2/3Ca1/3MnO3/Eu2CuO4/La2/3Ca1/3MnO3磁性隧道结的制备与表征

采用磁控溅射,紫外线光刻和离子束刻蚀制备了La2/3Ca1/3MnO3lEu2CuO4/La2/3Ca1/3MnO3磁性隧道结.通过对获得的磁性隧道结的Ⅰ-Ⅴ特性测量,发现非线性的Ⅰ-Ⅴ特性,显示结样品的隧穿特性.有趣的是发现在电极材料La2/3Ca1/3MnO3的金属-绝缘体转变温度(Tp)以下,Ⅰ-Ⅴ曲线出现一个跳变.随着温度降低,开始出现跳变的临界电流增大,但是跳变都发生在同样的电压下～209mV.当电流增大或减小在跳变点附近出现回滞.这一跳变只发生在铁磁金属态,表明这是一个磁性相关联的效应,可能对应一种新的磁性开关过程.虽然,目前对这一现象背后的物理机理还不清楚,但是,这一现象有可能在未来自旋电子学器件方面具有潜在的应用价值.     

La2/3Ca1/3MnO3薄膜自旋输运特性研究

本文通过射频磁控溅射法制备了La2/3Ca1/3MnO3(LCMO)薄膜.该薄膜在接近峰值电阻温度Tp(Tp=308K)发生铁磁金属相-顺磁绝缘体相相变.磁场的作用下,电阻温度曲线较无磁场时发生右移,而且Tp点也向高温移动,(H=0.5T时,Tp≈314K;H=1.0T时,Tp≈318K);1T磁场所产生最大的磁电阻值为34%.激光作用下,电阻温度曲线向左移动,Tp变为300K,其最大的光致电阻变化相对值为43.5%.能带理论定性分析表明产生这一不同现象主要是由于eg电子的不同状态引起的.     

La0.33Pr0.34Ca0.33MnO3薄膜的应变效应

采用脉冲激光沉积法分别在(100)LaAlO3和(100)SrTiO3基片上生长了La0.33Pr0.34Ca0.33MnO3 薄膜,并通过磁测量和电输运测量对生长在不同基片上的La0.33Pr0.34Ca0.33MnO3薄膜的物性进行了研究.结果表明,基片和薄膜之间的压应力导致La0.33Pr0.34Ca0.33MnO3薄膜容易出现铁磁相,而电荷有序相则被抑制.基片和薄膜之间的张应力则导致La0.33Pr0.34Ca0.33MnO3薄膜容易出现电荷有序相,铁磁相被抑制.导致该现象的可能原因之一是应力使得晶格中Mn-O键角发生改变而引起双交换作用的改变.     

La0.67Ca0.33MnO3薄膜中的各向异性应变与电荷有序

本文采用脉冲激光沉积法在NdGaO3(001)单晶衬底上制备了一系列的La0.67Ca0.33MnO3薄膜,实验主要研究了薄膜的输运性质.La0.67Ca0.33sMnO3块材是铁磁金属基态,而La0.67Ca0.33MnO3/NdGaO3(001)薄膜由于各向异性应变的存在,可以观测到电荷有序绝缘相的出现.薄膜样品表...     

La1.89Ce0.11CuO4/La0.7Ca0.3MnO3异质结的原位制备及输运性质研究

采用脉冲激光沉积方法,在SrTiO3(STO)基片上原位制备了电子型掺杂高温超导体La1.89Ce0.11CuO4(LCCO)与超大磁电阻(CMR)材料La0.7Ca0.3MnO3(LCMO)异质结.使用X射线衍射和透射电镜分析,表明异质结是c轴取向外延生长.LCCO层的超导转变温度TC0是18.5K,LCMO层的金属-绝缘转变温度为195K.我们研究了这种异质结的界面微分电导,得到LCCO的能隙大小是4.2meV.     

La2/3 Ca1/3 MnO3中绝缘体-金属相变与CMR效应

我们研究了超大磁阻材料La2/3Ca1/3MnO3的磁电特性,发现由电阻测量得到的绝缘体－金属相变与由磁化曲线得到的顺磁－铁磁相变温区完全一致,均随磁场的增强推向高温区。结果证明绝缘体－金属相变起因于磁序的变化,并伴随着越大磁电阻效应的CMR的发生。     

Magnetotransport properties of La0.67Ca0.33MnO3//La0.67Sr0.33MnO3 bilayers

The perovskite bilayers La0.67Ca0.33MnO3 （LCMO） （100 nm） / La0.67Sr0.33MnO3（LSMO） （100 nm） and LSMO （100 nm） / LCMO （100 nm） are fabricated by a facing-target sputtering technique. Their transport and magnetic properties are investigated. It is found that the transport properties between them are different obviously due to distinguishable structures, and the different lattice strains in both films result in the difference of metal-to-insulator transition. Only single-step magnetization loop appears in our bilayers from 5K to 320K, and the coercive force of LSMO/LCMO varies irregularly with a minimum ～ 2387A/m which is lower than that of LCMO and LSMO single layer films. The behaviour is explained by some magnetic coupling.     

脱氧La0.5Ca0.5MnO3样品的铁磁-反铁磁转变和电阻率变化

研究了氧空位对La0.5Ca0.5MnO3 (LCMO)多晶块材的电输运和磁性质的影响. 随着氧空位的增加, 样品在高温段的电阻率一直增加, 并满足绝热小极化子模型, 而低温段的电阻率先下降后上升, 并出现明显的dR/dT>0的行为, 直至最后变为绝缘的. 氧空位的增加抑止了反铁磁相的出现, 使得脱氧的LCMO样品不发生反铁磁转变, 进一步增加氧空位则会抑制铁磁相.     

Simulation of Temperature-Dependent Resistivity for Manganite La1/3Ca2/3MnO3

The resistivity of the heavy-doped La1/3Ca2/3MnO3 （LCMO） is simulated using a random resistor network model, based on a phase separation scenario. The simulated results agree well with the reported experimental data, showing a transition from a charge-disordered （CDO） state embedded with a few ferromagnetic （FM） metallic clusters to a charge-ordered （CO） state, corresponding to the transition from a high-temperature paramagnetic （PM） insulating state to a low-temperature antiferromagnetic （AF） insulating state. Furthermore, we find that the number of AF/CO clusters increases with decreasing temperature, and the clusters start to connect to each other around 250K, which causes percolating in the system. The results further verify that phase separation plays a crucial role in the electrical conductivity of LCMO.     

Activation energy in La0.7Ca0.3MnO3/YBa2Cu3O7-δ / La0.7Ca0.3MnO3 superconducting trilayers

Resistivity vs. temperature measurements on La_0.7Ca_0.3MnO₃/YBa₂Cu₃O_7-δ /La_0.7Ca_0.3MnO₃ (LCMO/YBCO/LCMO) trilayers with different YBCO thickness, were performed in external magnetic field H up to 8 T. By evaluating the activation energy U from the slope of the resistivity Arrhenius plot, a strong depression of U has been observed when decreasing the YBCO layer thickness and the absolute U values appear to be reduced with respect to the values reported in literature in the case of YBCO thin films and YBCO/insulating multilayers. Moreover, a logarithmic U vs. H dependence is shown both in the case of thick and thin YBCO layers indicating the formation of a two dimensional vortex lattice. The experimental data are discussed considering the strong influence of the ferromagnetic LCMO on the superconducting YBCO properties which reduces the effective YBCO thickness more than predicted by the conventional theories.     

La0.67Ca0.33MnO3薄膜皮秒光电效应

在1064 nm波长脉冲激光（脉宽25 ps）的照射下，钙钛矿氧化物薄膜La0.67Ca0.33MnO3/SrTiO3具有超快光电效应，对激光脉冲显示ps量级的响应时间，上升沿响应时间300 ps，半高宽700 ps，同时，对激光能量的响应灵敏度为500 mV/mJ。     

Self-injection length in La0.7Ca0.3MnO3-YBa2Cu3O7-δ ferromagnet-superconductor multilayer thin films

We have carried out extensive studies on the self-injection problem in barrierless heterojunctions between La_0.7Ca_0.3MnO₃ (LCMO) and YBa₂Cu₃O_7-δ (YBCO) thin films. The heterojunctions were formed in situ by sequentially growing LCMO and YBCO films on 〈100〉 LaAlO₃ (LAO) substrate using a pulsed laser deposition (PLD) system. YBCO micro-bridges with 64 μm width were patterned both on the LAO (control) and LCMO side of the substrate. Critical current, I _c, was measured at 77 K on both the control side as well as the LCMO side for different YBCO film thickness. It was observed that while the control side showed a J _c of ∼ 2 × 10⁶ A/cm², the LCMO side showed about half the value for the same thickness (1800 ?). The difference in J _c indicates that a certain thickness of YBCO has become ‘effectively’ normal due to self-injection. From the measurement of J _c at two different thicknesses (1800 ? and 1500 ?) of YBCO films both on the LAO as well as the LCMO side, the value of self-injection length (at 77 K) was estimated to be ∼ 900 ?. To the authors’ best knowledge, this is the first time that self-injection length has been quantified. A control experiment carried out with LaNiO₃ deposited by PLD on YBCO did not show any evidence of self-injection.     

Superconducting Transition Temperature and Metal--Semiconductor Transition Temperature in YBa2Cu4O8/La0.67Ca0.33MnO3/YBa2Cu4O8 Trilayer Films

YBa₂Cu₄O₈/La_0.67Ca_0.33MnO₃/YBa₂Cu₄O₈(YBCO/LCMO/YBCO) trilayer films were prepared by magnetron facing-target sputtering. For the first time, the oscillatory behaviour of superconducting transition temperature T_c,ON with the thickness of LCMO (d_L) has been observed. The strongest nonmonotonic information in the T_c,ON--d_L curves appears clearly when d_L is larger than the critical thickness d_L^CR. The metal--semiconductor transition temperature can only be detected at d_L>d_L^CR. The dependence on the ferromagnetic spacer layer in YBCO/LCMO/YBCO systems suggests strongly the interplay of ferromagnetic and superconducting couplings.     

微纳米加工技术对La2/3Ca1/3MnO3材料性能影响的研究

利用脉冲激光沉积(PLD)方法制备了La2/3Ca1/3MnO3(LCMO)外延薄膜.然后利用微纳米加工技术对LCMO薄膜材料进行了局部改造,制造出宽度仅为83纳米的弱联接结构,并对此进行了一系列的物性改变研究.发现在测量电流不变(1μA)的情况下,R～T曲线在120K附近有一个尖锐的跳变,跳变的温度区间很窄.此外,测量电流和外加磁场的增加,都能对跳变现象产生抑制作用.目前认为这种现象的产生是由于相分离的原因导致的.     

Electron spin resonance analysis of magnetic structures in La2/3Ca1/3MnO3

Measurements of electron spin resonance (ESR) of La_2/3Ca_1/3MnO₃ (LCMO) in the ferromagnetic and paramagnetic phases were carried out. Phase transition and temperature dependence of the peak-to-peak ESR linewidth were determined. The transition temperature between ferromagnetic and paramagnetic phases was observed at 265 K. A prominent increase of the peak-to-peak linewidth with decreasing temperature below T_c was observed. Using the dynamic scale theory and block spin transformation in critical phenomenon, the quantitative calculation of peak-to-peak linewidth at near T_c was made, which was in good agreement with the experimental data. It was believed that the long interactions between the ferromagnetic microregions for LCMO played a key role in determining the ESR linewidth.     

Transmission electron microscopy investigation of domains and boundaries in bulk La2/3Ca1/3MnO3

The microstructure of domains and boundaries in a bulk orthorhombic La_2/3Ca_1/3MnO₃ material is analysed by applying symmetry group theory. Group theory predicts that the 120° and 90° orientation domains occur in bulk La_{1? x} Ca _x MnO₃ (LCMO) when the cubic LCMO transforms into the orthorhombic LCMO by means of a structural phase transition. The orientation domains are observed and characterized by means of electron diffraction and high-resolution electron microscopy. Antiphase boundaries due to the loss of translation operations have displacement vectors of 1/2[010]o, 1/2[101]o and 1/2[111]0, according to the group theory. Diffraction contrast technique reveals that the displacive vector of most antiphase boundaries is 1/2[111]o, which is also confirmed by means of high-resolution electron microscopy.     

Direct injection of spin-polarized carriers across YBa2Cu3O7-δ-La0.3Ca0.7MnO3 interface at 77 K

We report here injection of spin-polarized carriers from a half-metallic La_0.3Ca_0.7MnO₃ (LCMO) colossal magnetoresistive (CMR) thin film into a high-temperature superconducting YBa₂Cu₃O_7-δ (YBCO) thin film studied using a micro-bridge. The LCMO and YBCO films were grown on 〈100〉 LaAlO₃ (LAO) substrate sequentially using pulsed laser deposition (PLD). I-V measurements carried out at 77 K show that while normal critical current, I _c ⁿ , of the micro-bridge is 80 mA, the critical current, I _c ^p , through the micro-bridge when injected from the CMR layer is 38 mA. This clearly shows that spin-polarized quasiparticles injected from the the CMR layer into the YBCO layer suppress the critical current of the superconductor via the pair-breaking phenomena.     

Highly oriented La2/3Ca1/3MnO3 films grown on silicon-on-insulator substrates by pulsed laser deposition

High quality La_2/3Ca_1/3MnO₄(LCMO) thin films have been deposited on silicon-on-insulator (SOI) substrates only buffered by yt tria-stabilized zirconia (YSZ) by using the pulsed laser deposition (PLD) technique. The results obtained from X-ray diffraction (XRD), reflection high energy electron diffraction (RHEED), scanning electron microscopy (SEM) and magnetization investigations indicate that the LCMO films are highly oriented both in-plane and out-of-plane. The Curie temperature T _c is close to 260 K and the insulator–metal (I–M) transition appears around 220 K. The conducting mechanism at low temperatures is dominated by the electron–magnon scattering. A tensile stress from the film–substrate lattice mismatch results in magnetic ‘easy axes’ in the film plane and the magnetic anisotropy energy increases with cooling. A maximum magnetoresistance (MR) is observed near 190 K, with the external magnetic field either parallel or vertical to the LCMO film plane. Moreover, the large intrinsic high-field magnetoresistance (HFMR) and the very small extrinsic low-field magnetoresistance (LFMR) again reveal that the LCMO films on SOI substrates are highly oriented thin films of good crystallinity.     

Electrical properties and conduction mechanisms in La2/3Ca1/3MnO3 thin films prepared by pulsed laser deposition on different substrates

Perovskite manganite La_2/3Ca_1/3MnO₃ thin films were directly grown on MgO(100), Si(100) and glass substrates by pulsed laser deposition. From the XRD patterns, the films are found to be polycrystalline, single-phase orthorhombic. The metal–insulator transition temperature is 209 K for LCMO/MgO, 266 K for LCMO/Si and 231 K for film deposited on the glass substrate. The conduction mechanism in these films is investigated in different temperature regimes. Low-temperature resistivity data below the phase transition temperature (T _P) have been fitted with the relation \( \rho = \rho_{0} + \rho_{2} T^{2} + \rho_{4.5} T^{4.5} \) , indicating that the electron–electron scattering affects the conduction of these materials. The high-temperature resistivity data (T > T _P) were explained using variable-range hopping (VRH) and small-polaron hopping (SPH) models. Debye temperature values are 548 K for LCMO/Cg, 568 K for LCMO/Si and 508 K for LCMO/MgO thin films. In all thin films, the best fitting in the range of VRH is found for 3D dimension. The density of states near the Fermi level N (E _F) for LCMO/MgO is lower due to the prominent role of the grain boundary in LCMO/MgO and increase in bending of Mn–O–Mn bond angle, which decreases the double exchange coupling of Mn³⁺–O²–Mn⁴⁺ and in turn makes the LCMO/MgO sample less conducting as compared to the other films.