Si表面离子束辅助沉积Ti纳米膜的研究

用离子束技术探讨了Si表面纳米Ti薄膜制备的可行性以及Ti薄膜组织结构与离子束工艺之间的关系。实验进行试样表面预处理、轰击离子能量、离子密度、温度、沉积时间等离子束工艺参数对单晶Si(111)表面沉积的Ti薄膜结构的影响。采用原子力显微镜(AFM)和扫描电子显微镜(SEM)分析了Ti膜表面晶粒形貌，并用X射线衍射仪(XRD)和俄歇电子谱仪(AES)分析了Ti膜的结构和成分。由于残余气体的影响，Ti膜发生了不同程度的氧化，随温度升高和轰击离子强度增加氧化愈加明显。     

TiN和Ti1-xSixNy薄膜的微观结构分析

使用x射线衍射(XRD)、x射线光电子谱(XPS)、高分辨透射电子显微镜(HRTEM)和原子力显微镜(AFM)多种观测手段分析了TiN薄膜和Ti1-xSixNy纳米复合薄膜的微观结构.实验分析证明Ti1-xSixNy薄膜是由直径为3-5nm的纳米晶TiN和非晶Si3N4相构成,并且Ti1-xSixNy薄膜的表面粗糙度小于相同条件下制备的TiN薄膜,在Ti1-xSixNy薄膜体系的自由能中引入界面能的概念,在此基础上分析了体系中TiN晶粒的取向问题.     

B掺杂对Ti薄膜结构与性能的影响

采用双靶共溅射方法制备了微量B掺杂的Ti薄膜样品, 利用X射线光电子能谱、扫描电子显微镜和X射线衍射仪对样品的掺杂原子浓度、 表面形貌、晶型结构、晶粒尺寸和应力进行了分析表征. 研究表明: 掺杂后的Ti薄膜晶粒得到明显细化, 并随着掺杂浓度的增大, 薄膜的晶粒尺寸呈减小趋势, 当掺杂浓度为5.50 at%时, Ti薄膜晶粒尺寸减小为1.3 nm, 呈现出致密的柱状结构. B掺杂后的Ti薄膜应力由压应力转变为张应力.     

Co:BaTiO3纳米复合薄膜的制备及其结构

用脉冲激光沉积技术(PLD)在MgO(100)基底上生长了嵌埋Co纳米晶的BaTiO3复合薄膜. 分别利用x射线衍射(XRD)、原子力显微镜(AFM)以及拉曼光谱(Raman)对薄膜的微观结构、表面 形貌进行了表征. 结果表明该薄膜为c轴取向的四方晶体结构，薄膜表面均匀、致密、 具有原子尺度的光滑性，其均方根表面粗糙度(RMS)达到015nmCo以纳米晶形式嵌埋BaTi O3基体中，呈单分散性均匀分布，其粒径随激光脉冲数的增加而增大. Co：BaTiO3纳米 复合薄膜拉曼峰的强度随钴纳米晶粒径的增加明显减弱，但是峰的宽度逐渐增加. 关键词： Co：BaTiO3 纳米复合薄膜 脉冲激光沉积     

磁控溅射(Ti,N)/Al纳米复合薄膜的微结构和力学性能

采用Al和TiN靶通过磁控共溅射方法, 制备了一系列Ti:N≈1的不同(Ti, N) 含量的铝基纳米复合薄膜, 利用X射线能量分散谱仪、X射线衍射仪、透射电子显微镜和纳米力学探针表征了薄膜的成分、 微结构和力学性能, 研究了(Ti, N)含量对复合薄膜微结构和力学性能的影响. 结果表明: Ti, N原子的共同加入使复合薄膜形成了同时具有置换固溶和间隙固溶特征的"双超过饱和固溶体", 薄膜的晶粒随着溶质含量的增加逐步纳米化, 并进一步形成非晶结构, 晶界区域形成溶质原子的富集区. 相应地, 复合薄膜的硬度在含1.8 at.%(Ti, N) 时就可迅速提高到3.9 GPa; 随着TiN含量的增加, 薄膜的硬度进一步提高到含17.1 at.%(Ti, N)时的8.8 GPa. 以上结果显示出Ti和N"双超过饱和固溶"对Al薄膜极其显著的强化效果.     

乙炔气体流量对纳米TiC类金刚石复合膜的化学结构及力学性能影响

采用离子注入与反应磁控溅射相结合的方法在钛合金及硅片基体表面上制备了纳米TiC类金刚石(DLC)复合膜.通过纳米压痕技术检测了薄膜的纳米硬度，显微划痕试验评估了薄膜的结合力.通过X射线光电子能谱及X射线衍射表征了薄膜的化学结构.结果表明，通过改变C₂H₂气体流量，可以达到控制薄膜中钛原子含量的目的，合适的C₂H₂气体流量可以在DLC膜中形成较多的纳米TiC晶粒，形成DLC包覆TiC晶粒的复合结构，使DLC膜力学性能得到明显提高.另外，划痕试验表明掺钛、先注入后沉积工艺都使薄膜的结合力得到了较大提高. 关键词： 纳米TiC类金刚石复合膜 类金刚石膜 力学性能     

基片温度对磁控溅射HfO2薄膜结构和性能影响分析

在纯氧条件下,采用直流磁控溅射技术在单晶硅基片上沉积氧化铪（HfO2）薄膜,并研究了沉积过程中基片温度对薄膜结构和性能的影响规律。利用X射线衍射仪（XRD）和X射线能谱（XPS）表征了薄膜的晶体结构和组分,利用原子力显微镜（AFM）观察薄膜表面形貌,利用纳米力学测试系统表征了薄膜的纳米硬度和弹性模量。结果表明:磁控溅射制备的HfO2薄膜样品呈(111)择优生长,其晶粒尺寸随着基片温度的升高而增大,但其晶型并不发生转变。随着基片温度的增加,基片中的硅元素向薄膜内扩散,影响了薄膜的化学计量比。沉积薄膜的表面形貌和力学性能亦受到其结构和组分变化的影响。在200 ℃条件下制备的HfO2薄膜纯度高,O、Hf元素化学计量达到了1.99,其表面质量和力学性能均达到了最佳值,随着基片温度升高至300 ℃以上,薄膜纯度下降,表面质量和力学性能均产生劣化。     

脉冲高能量密度等离子体沉积(Ti,Al)N薄膜组织及其性能研究

利用脉冲高能量密度等离子体技术在室温条件下在45＃钢基材表面沉积了高硬度耐腐蚀(Ti, Al)N薄膜. 利用扫描电子显微镜、X射线衍射、X射线光电子能谱、俄歇电子能谱分析了薄膜的显微组织.利用纳米压痕仪测试了薄膜的纳米硬度.测试了薄膜在05mol/L H2SO4水溶液中的耐蚀性. 测试结果表明：薄膜主要组成相为(Ti, Al)N，同时含有少量的AlN,薄膜的纳米硬度高达26 GPa,薄膜具有良好的耐蚀性，与1Cr18Ni9Ti奥氏体不锈钢相比，耐蚀性提高了一个数量级. 关键词： 脉冲高能量密度等离子体 薄膜 纳米硬度 耐蚀性     

HFCVD法制备纳米晶体碳化硅薄膜中氢流量对晶粒尺寸的影响

以甲烷、硅烷和氢气为反应气体,采用热丝化学气相沉积(HFCVD)法在单晶硅衬底上沉积纳米晶体碳化硅(SiC)薄膜.通过X射线衍射(XRD)和扫描电子显微镜(SEM)分别对SiC薄膜的晶体结构和表面形貌进行分析.实验发现氢气流量对碳化硅薄膜晶粒尺寸有很大影响,当氢气流量从10SCCM变化到300SCCM时,薄膜晶粒的平均尺寸将由较大的400 nm左右减小到40 nm左右.     

Co:BaTiO3/Si(100)纳米复合薄膜制备、微结构及其紫外光电子能谱研究

采用脉冲激光气相沉积(PLD)方法,在Si(100)晶面上制备了Co:BaTiO₃纳米复合薄膜.采用X射线衍射(XRD)结合透射电镜(TEM)方法研究了两种厚度Co:BaTiO₃纳米复合薄膜的晶体结构,当薄膜厚度约为30 nm时,薄膜为单一择优取向;当薄膜厚度约为100nm时,薄膜呈多晶结构.原子力显微镜(AFM)分析表明,当膜厚为30nm时,薄膜呈现明显的方形晶粒.采用紫外光电子能谱(UPS)研究了Co的价态和Co:BaTiO₃纳米复合薄 关键词： 3')" href="#">BaTiO₃ 纳米复合薄膜 紫外光电子能谱     

Plasma-enhanced chemical vapor deposition of organic particle thin films

Five organic precursors, 2,5-dimethyl-2,4-hexadiene, 2,5-norbornadiene, α-terpinine, limonene, and styrene have been studied as precursors for plasma deposition of low-k films. The films have been produced under particle-forming conditions in the plasma. Accordingly, films have a granular structure with grain sizes in the range 40–400 nm, as determined by AFM. Annealing at 400 °C preserves the granular structure of the films while the grain size decreases. Of the five precursors examined, 2,5-dimethyl-2,4-hexadiene and 2,5-norbornadiene produce films with the lowest dielectric constant, with a value of 3.3. While the dielectric constant varies with deposition conditions (pressure, flow rate, concentration of precursor), we find that the grain size of the films correlates most closely with the dielectric constant and conclude that the lowest value of the dielectric constant are obtained under conditions that promote the formation of particles larger than about 200 nm.     

直流磁控溅射沉积含He钛膜的研究

研究了用He/Ar混合溅射气体的直流磁控溅射制备钛膜中，He的掺入现象.分析结果表明，大量的He原子（He/Ti原子比高达56%）被均匀地引入到Ti膜中，其He含量可由混合溅射气体的He分量精确控制.通过调节溅射参数，可实现样品中He的低损伤引入.研究还发现，溅射沉积的含氦Ti膜具有较高的He成泡剂量和高的固He能力，这可能是溅射沉积形成了纳米晶Ti膜所致.纳米晶Ti膜较粗晶材料具有很高浓度的He捕陷中心，使He泡密度增大而泡尺寸减小.随He引入量的增加，Ti膜的晶粒尺寸减小，He引起的晶体点阵参数和X射线衍射峰宽度增大，晶体的无序程度增加.Helium trapping in the Ti films deposited by DC magnetron sputtering with a He/Ar mixture was studied. He atoms with a surprisingly high concentration (He/Ti atomic ratio is as high as 56%)incorporate evenly in deposited film. The trapped amount of He can be controlled by the helium partial amount. The introduction of the helium with no extra damage(or very low damage) can be realized by choosing suitable deposition conditions. It was also found that because of the formation of nanophase Ti film a relative high He flux for bubble formation is needed and the amount of the retain He in sputtering Ti films is much higher than that in the coarse grain Ti films. The nanophase Ti film can accommodate larger concentration of trapped sites to He, which results in a high density and small size of the He bubbles. With the increasing He irradiation flux, the grain size of Ti film decreases and the lattice spacing and width of the X ray diffraction peak increase due to the He introduction, and the film tends to amorphous phase.     

Surface chemical states of barium zirconate titanate thin films prepared by chemical solution deposition

Ba(Zr_0.05Ti_0.95)O₃ (BZT) thin films grown on Pt/Ti/SiO₂/Si(1 0 0) substrates were prepared by chemical solution deposition. The structural and surface morphology of BZT thin films has been studied by X-ray diffraction (XRD) and scanning electron microscope (SEM). The results showed that the random oriented BZT thin film grown on Pt/Ti/SiO₂/Si(1 0 0) substrate with a perovskite phase. The SEM surface image showed that the BZT thin film was crack-free. And the average grain size and thickness of the BZT film are 35 and 400 nm, respectively. Furthermore, the chemical states and chemical composition of the films were determined by X-ray photoelectron spectroscopy (XPS) near the surface. The XPS results show that Ba, Ti, and Zr exist mainly in the forms of BZT perovskite structure.     

Growth and structure of Bi0.5(Na0.7K0.2Li0.1)0.5TiO3 thin films prepared by pulsed laser deposition technique

Bi_0.5(Na_0.7K_0.2Li_0.1)_0.5TiO₃ (BNKLT) thin films were prepared on Pt/Ti/SiO₂/Si substrates by pulsed laser deposition (PLD) technique. The films prepared were examined by using X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The effects of the processing parameters, such as oxygen pressure, substrate temperature and laser power, on the crystal structure, surface morphology, roughness and deposition rates of the thin films were investigated. It was found that the substrate temperature of 600 °C and oxygen pressure of 30 Pa are the optimized technical parameters for the growth of textured film, and all the thin films prepared have granular structure, homogeneous grain size and smooth surfaces.     

氧压对飞秒激光沉积ZnO/Si(100)薄膜光学性能的影响

利用飞秒脉冲激光沉积法在n-Si（100）单晶衬底上制备了ZnO薄膜, 分析了衬底温度、激光能量、氧压及退火处理对薄膜结构和光学性能的影响. X射线衍射结果表明, 当激光能量为15?mJ、氧压为10?mPa时, 80?℃生长的薄膜取向性最好. 场扫描电子显微镜结果显示薄膜的晶粒尺寸随激光能量的增加而减小、随衬底温度的升高而增大且退火后明显变大. 紫外-可见透射光谱显示薄膜具有90%以上的可见光透过率.光致发光谱表明当氧压为10 mPa时,除了ZnO的紫外本征峰外, 还有一波长为410 nm的强紫光峰, 当氧压增至20 mPa以上, 所有缺陷峰均消失, 只有376 nm处的紫外本征峰. 与纳秒激光法所制备的薄膜特性进行了比较, 结果表明, 虽然纳秒激光沉积所制备的薄膜具有更高的c轴取向度, 但飞秒激光沉积制备的薄膜具有更好的发光性能. 关键词： 氧化锌 飞秒脉冲激光沉积 透过率 光致发光     

溅射功率对直流磁控溅射Ti膜结构的影响

 采用直流磁控溅射方法制备了纯Ti膜，研究了不同功率下Ti膜的沉积速率、表面形貌及晶型结构，并对其应力进行了研究。研究表明：薄膜的沉积速率随溅射功率的增加而增加，当溅射功率为20 W时，原子力显微镜(AFM)图像显示Ti膜光洁、致密，均方根粗糙度最小可达0.9 nm。X射线衍射(XRD)分析表明薄膜的晶体结构为六方晶型，Ti膜应力先随溅射功率增大而增大，在60 W时达到最大值（为945.1 MPa），之后随溅射功率的增大有所减小。     

溅射功率对Mo薄膜微结构和性能的影响

 实验采用直流磁控溅射沉积技术在不同溅射功率下制备Mo膜,研究了不同溅射功率下Mo膜的沉积速率、表面形貌及晶型结构,并对其晶粒尺寸和应力进行了研究。利用原子力显微镜观察样品的表面形貌发现随着溅射功率的增加,薄膜表面粗糙度逐渐增大。X射线衍射分析表明薄膜呈立方多晶结构,晶粒尺寸为14.1～17.9 nm;应力先随溅射功率的增大而增大,在40 W时达到最大值(2.383 GPa),后随溅射功率的增大有所减小。     

GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文)

通过直流磁控反应溅射制备了氮化铝(AlN)薄膜,研究了沉积条件与氮化镓(GaN)缓冲层对薄膜质量的影响。利用X-射线衍射仪(XRD)和扫描电镜(SEM)表征了AlN薄膜的晶体结构和表面形貌。XRD研究结果表明,低工作压强、短靶距和适当的氮气偏压有利于(002)择优取向的AlN薄膜沉积。随着沉积时间的增加,沉积在50 nm厚的GaN缓冲层上的AlN薄膜的(002)面的衍射峰的半高宽急剧减小,而沉积在1μm厚的GaN薄膜上的AlN薄膜的(002)面的衍射峰的半高宽几乎不变。SEM测试结果表明:在沉积的初期,沉积在1μm厚的GaN薄膜上的AlN薄膜的(002)面的晶粒大小分布比沉积在50 nm厚的GaN缓冲层上的AlN薄膜的均匀,而随着沉积时间的增加,它们的晶粒大小分布几乎趋向一致。     

Yield strengths and stress induced crackles in copper films：effects of substrate and passivated layer

Yield strengths in unpassivated and 530 nm TiN passivated Cu films deposited on Ti, high-speed steel and Ni substrates have been measured by x-ray diffraction (XRD) in combination with the four-point bending method. The results show that, although the texture and average grain size, investigated by XRD and transmission electron microscopy respectively, do not vary with different substrate, the yield strength of the Cu film increases obviously when a thin passivated layer is present and varies slightly with substrates. Many crackles appear in the passivated Cu film on Ti substrate but do not appear in other samples. The experimental results have been explained satisfactorily with an expression for the yield strength of thin films given previously.