Co:BaTiO3/Si(100)纳米复合薄膜制备、微结构及其紫外光电子能谱研究

采用脉冲激光气相沉积(PLD)方法,在Si(100)晶面上制备了Co:BaTiO3纳米复合薄膜.采用X射线衍射(XRD)结合透射电镜(TEM)方法研究了两种厚度Co:BaTiO3纳米复合薄膜的晶体结构,当薄膜厚度约为30 nm时,薄膜为单一择优取向;当薄膜厚度约为100 nm时,薄膜呈多晶结构.原子力显微镜(AFM)分析表明,当膜厚为30 nm时,薄膜呈现明显的方形晶粒.采用紫外光电子能谱(UPS)研究了Co的价态和Co:BaTiO3纳米复合薄膜的价带谱.研究表明:当Co浓度很高时其态密度(DOS)与晶体BaTiO3明显不同.此外,嵌埋纳米Co颗粒的BaTiO3薄膜的能带结构可用纳米颗粒的浓度来调制,从而也可对其光学和电学性质进行改性.     

Fe纳米颗粒嵌埋对类金刚石薄膜结构及电学性能的影响

采用脉冲激光气相沉积方法制备了不同Fe嵌埋浓度的Fe: DLC多层纳米复合薄膜。用X射线光电子能谱仪(XPS)对薄膜的组成成分进行分析。利用透射电子显微镜（TEM）、拉曼光谱、电流-电压曲线研究Fe纳米颗粒嵌埋对薄膜的微观结构及电学性能的影响。XPS和TEM表明,Fe纳米颗粒周期性地均匀地嵌埋在碳薄膜中。拉曼光谱表明薄膜中的C为典型的类金刚石结构,Fe纳米颗粒促进芳香环式结构的形成,薄膜结构的有序度提高。电流 电压曲线表明,Fe纳米颗粒的嵌埋导致薄膜的室温电导率增加。     

Fe纳米颗粒嵌埋对类金刚石薄膜结构及电学性能的影响

 采用脉冲激光气相沉积方法制备了不同Fe嵌埋浓度的Fe: DLC多层纳米复合薄膜。用X射线光电子能谱仪(XPS)对薄膜的组成成分进行分析。利用透射电子显微镜（TEM）、拉曼光谱、电流-电压曲线研究Fe纳米颗粒嵌埋对薄膜的微观结构及电学性能的影响。XPS和TEM表明,Fe纳米颗粒周期性地均匀地嵌埋在碳薄膜中。拉曼光谱表明薄膜中的C为典型的类金刚石结构,Fe纳米颗粒促进芳香环式结构的形成,薄膜结构的有序度提高。电流 电压曲线表明,Fe纳米颗粒的嵌埋导致薄膜的室温电导率增加。     

Co:BaTiO3/Si(100)纳米复合薄膜制备、微结构及其紫外光电子能谱研究

采用脉冲激光气相沉积(PLD)方法,在Si(100)晶面上制备了Co:BaTiO₃纳米复合薄膜.采用X射线衍射(XRD)结合透射电镜(TEM)方法研究了两种厚度Co:BaTiO₃纳米复合薄膜的晶体结构,当薄膜厚度约为30 nm时,薄膜为单一择优取向;当薄膜厚度约为100nm时,薄膜呈多晶结构.原子力显微镜(AFM)分析表明,当膜厚为30nm时,薄膜呈现明显的方形晶粒.采用紫外光电子能谱(UPS)研究了Co的价态和Co:BaTiO₃纳米复合薄 关键词： 3')" href="#">BaTiO₃ 纳米复合薄膜 紫外光电子能谱     

Co:BaTiO3/Si(100)纳米复合薄膜制备、微结构及其紫外光电子能谱研究

采用脉冲激光气相沉积(PLD)方法，在Si(100)晶面上制备了Co:BaTiO₃纳米复合薄膜.采用X射线衍射(XRD)结合透射电镜(TEM)方法研究了两种厚度Co:BaTiO₃纳米复合薄膜的晶体结构，当薄膜厚度约为30 nm时，薄膜为单一择优取向；当薄膜厚度约为100nm时，薄膜呈多晶结构.原子力显微镜(AFM)分析表明，当膜厚为30nm时，薄膜呈现明显的方形晶粒.采用紫外光电子能谱(UPS)研究了Co的价态和Co:BaTiO₃纳米复合薄     

金属纳米团簇复合薄膜Au/BaTiO3与Fe/BaTiO3的PLD制备及其光吸收特征

用脉冲激光沉积技术制备了掺杂纳米金属颗粒Au或Fe的BaTiO3复合薄膜.用透射电子显微镜和x射线光电子能谱表征了金属颗粒的形态和化学态.330-800nm范围的吸收谱研究表明,掺Au颗粒的BaTiO3薄膜在580nm附近有一个明显的共振吸收峰,而掺Fe颗粒的BaTiO3薄膜没有这样的吸收峰.用Mie散射理论对结果进行了分析.     

脉冲激光沉积Ag:BaTiO3纳米复合薄膜及其光学特性

在MgO(100)基片上利用脉冲激光沉积技术制备了掺有Ag纳米颗粒的BaTiO3复合薄膜.通过X射线衍射对薄膜的结构进行了表征,利用透射电子显微镜对Ag纳米颗粒的尺寸、形态进行了观测,X射线光电子能谱结果表明Ag呈金属态.在410-500 nm范围内观测到了Ag纳米颗粒引起的等离子振荡峰,随着后处理温度和Ag颗粒浓度的增加,吸收峰发生红移,并出现了双峰现象.     

脉冲激光沉积Ag:BaTiO3纳米复合薄膜及其光学特性

在MgO(100)基片上利用脉冲激光沉积技术制备了掺有Ag纳米颗粒的BaTiO₃复合薄膜.通过X射线衍射对薄膜的结构进行了表征,利用透射电子显微镜对Ag纳米颗粒的尺寸、形态进行了观测,X射线光电子能谱结果表明Ag呈金属态.在410—500nm范围内观测到了Ag纳米颗粒引起的等离子振荡峰,随着后处理温度和Ag颗粒浓度的增加,吸收峰发生红移,并出现了双峰现象. 关键词： 金属纳米复合薄膜 激光沉积 光吸收     

BaTiO_3晶体薄膜PLD法生长工艺参量研究

采用脉冲激光沉积方法在单晶MgO基片上外延生长了BaTiO3晶体薄膜.为改善薄膜的结晶质量和表面粗糙度,研究并优化了生长工艺中生长温度和激光能量两个参量,并对薄膜样片实行原位退火.找到了BaTiO3薄膜在优先方向上的结晶效果,分析了结晶质量对生长温度的依赖关系和不同激光能量对结晶薄膜的表面粗糙度的影响.利用X射线衍射仪测定结晶效果与特性,原子力显微镜表征BaTiO3薄膜的结晶表面形貌与粗糙度.测试结果表明,在c轴取向生长BaTiO3薄膜,在(001)和(002)方向上都出现强度很高的尖锐衍射峰,具有较好的结晶质量和较小的表面粗糙度,原子力显微镜测定出薄膜的表面粗糙度为0.563nm.     

单晶Si表面离子束溅射沉积Co纳米薄膜的研究

采用离子束溅射沉积法，在单晶Si基片上制备了不同厚度(1—100nm)的Co纳米薄膜.利用原子力显微镜、X射线光电子能谱(XPS)仪和X射线衍射仪对不同厚度的Co纳米薄膜进行了分析和研究.结果表明：当薄膜厚度为1—10nm时，沉积颗粒形态随薄膜厚度增加将由二维生长的细长胞状过渡到多个颗粒聚集成的球状.当膜厚大于10nm时，小颗粒球聚集成大颗粒球，颗粒球呈现三维生长状态.表面粗糙度随膜厚的增加呈现先增加后减小的趋势，在膜厚为3nm时出现极值.XPS全程宽扫描和窄扫描显示：薄膜表面的元素成分为Co，化学态分别 关键词： 离子束沉积 纳米薄膜 X射线光电子能谱 X射线衍射     

显微拉曼研究外延生长的BaTiO_(3-x)薄膜的结构相变与结构动力学(英文)

我们用显微拉曼、卢瑟福背散射谱、X射线散射和非对称摇摆等实验手段研究了在1 0 - 2 到1 0 - 5帕氧气压下用激光分子束外延技术生长的BaTiO3-x薄膜的结构动力学特性。测量结果表明生长氧压越低,晶格常数c和c/a越大,晶格常数a稍微减小,晶胞体积变大。随着生长氧压的减小,薄膜中氧含量减小。在3 0×1 0 - 5帕氧气压下生长的薄膜中氧缺陷可达0 48,但是样品的四方相结构可以很好的维持。显微拉曼研究进一步确定了样品都是四方相结构。另外,在BaTiO2 52 薄膜的拉曼光谱中发现高频段有两个新峰,其可能是由于氧缺陷导致的二级拉曼散射引起的。随着生长氧压的减小,拉曼峰向低频移动,表明薄膜中的应力减小。同时,拉曼峰变宽,这可能是由于氧缺陷导致的结构畸变引起的。由于在薄膜中存在二维张应力,BaTiO3单晶样品中的结构相变特征在我们的样品中从78到5 5 0K的温度范围内不存在。     

BaNb_xTi_(1-x)O_3薄膜的电学性质及结构相变(英文)

我们利用激光分子束外延设备(L MBE)在MgO上外延生长了一系列BaNbxTi1-xO3(0 相似文献   

溶胶-凝胶法制备BaTiO3/SrTiO3多层膜的介电增强效应

采用溶胶凝胶法,在PtTiSiO2Si衬底上逐层制备了BaTiO3SrTiO3多层膜.从多层膜的XRD图可看出明显的双峰,分别对应为BaTiO3和SrTiO3的特征峰,表明样品已形成了多层膜结构.与同厚度的Ba05Sr05TiO3单层膜比较,BaTiO3SrTiO3多层膜的介电系数得到了明显的增强,在频率为10kHz时,周期为66nm的BaTiO3SrTiO3多层膜相对于同厚度的Ba05Sr05TiO3薄膜的介电系数从245增强到595,而损耗依然保持较低,分别为0029和0033.研究同时表明,BaTi 关键词： 溶胶-凝胶法 多层膜 介电增强     

Effect of Mg/Co on the properties of CdS thin films deposited by spray pyrolysis technique

Mg, Co doped and (Mg, Co) co-doped CdS thin films were prepared using chemical spray pyrolysis method. It is observed from the X-ray diffraction study that the deposited film exhibit cubic phase of CdS with preferred orientation along the (111) plane and incorporation of Mg and Co has been confirmed form energy dispersive analysis and XPS analysis as well. The doped and codoped CdS thin films exhibit 1LO and 2LO vibrations as confirmed by Raman spectrum. The core level XPS spectra ensures the incorporation of doping elements precisely. The morphological variations due to the incorporation of Co and Mg in CdS thin films have been observed by FE-SEM. The particle sizes and crystalline nature have been revealed from HRTEM images and corresponding SAED patterns. The co-doped CdS thin films show a significant shift blue in absorption spectrum. Improved magnetic properties have been observed for the co-doped CdS thin films.     

碳化硅薄膜脉冲激光晶化特性研究

采用XeCl准分子激光对非晶碳化硅(a-SiC)薄膜的脉冲激光晶化特性进行了研究.通过原子力显微镜（AFM）和Raman光谱技术对退火前后薄膜样品的形貌、结构及物相特性进行了分析.结果表明，选用合适的激光能量采用激光退火技术能够实现a-SiC薄膜的纳米晶化.退火薄膜中的纳米颗粒大小随着激光能量密度的增加而增大；Raman谱分析结果显示了退火后的薄膜的晶态结构特性并给出了伴随退火过程存在的物相分凝现象.根据以上结果并结合激光退火特性，对a-SiC的脉冲激光晶化机理进行了讨论. 关键词： 激光退火 晶化 碳化硅     

Hydrogenation effect on electrical,optical and magnetic properties of ZnSe/Co bilayer DMS thin films

This paper reports ZnSe/Co bilayer diluted magnetic semiconductor thin films have been prepared by using thermal evaporation technique. The bilayer DMS thin films were hydrogenated at different pressures (15–45 psi) for a constant time of 30 min. Before and after hydrogenations of these bilayer thin films the electrical, optical and magnetic properties have been investigated. Electrical resistivity and optical band gap were found to be increased with respect to hydrogenation pressure. X-ray diffraction (XRD) and magnetic measurements confirmed the formation of DMS ZnSe/Co bilayer DMS thin films. Raman spectra show the presence of hydrogen in these thin films. Surface topography study of as-grown, annealed and hydrogenated ZnSe/Co bilayer thin films indicates uniform deposition, mixing of layers and increment in roughness at the surface due to hydrogen passivation effect respectively.     

不同衬底温度下PLD法制备的氧化锌薄膜的特性

利用GCR-170型脉冲激光器Nd:YAG的三次谐波(355nm),以蓝宝石Al2O3(0001)为衬底,在不同温度下采用脉冲激光沉积法制备了ZnO薄膜.通过原子力显微镜、Raman谱、光致发光谱、红外透射谱、霍尔效应和表面粗糙度分析仪对制备的ZnO薄膜进行了测试.分析了在不同衬底温度下薄膜的表面形貌、光学特性,同时进行了薄膜结构和厚度的测试.研究表明:衬底温度对ZnO薄膜的表面形貌、光学特性、结构特性都是重要的工艺参量,尤其在500℃时沉积的ZnO薄膜致密均匀,并表现出较强的紫外发射峰.     

四方相BaTiO_3:Ce及Mn离子注入的BaTiO_3:Ce的拉曼散射的研究

四方相ＢａＴｉＯ３：Ｃｅ及Ｍｎ离子注入的ＢａＴｉＯ３：Ｃｅ的拉曼散射的研究刘玉龙朱恪张昊朱镛（中科院物理研究所北京１０００８０）赵金涛（张掖师范高等专科学校物理系甘肃张掖７３４０００）萧季驹（香港城市大学物理及材料科学系香港九龙）ＲａｍａｎＳｐｅｃ...     

Chemical spray pyrolysis of β-In2S3 thin films deposited at different temperatures

In₂S₃ thin films were deposited onto indium tin oxide-coated glass substrates by chemical spray pyrolysis while keeping the substrates at different temperatures. The structures of the sprayed In₂S₃ thin films were characterized by X-ray diffraction (XFD). The quality of the thin films was determined by Raman spectroscopy. Scanning electron microscopy (SEM) and atomic force microscopy were used to explore the surface morphology and topography of the thin films, respectively. The optical band gap was determined based on optical transmission measurements. The indium sulfide phase exhibited a preferential orientation in the (0, 0, 12) crystallographic direction according to the XRD analysis. The phonon vibration modes determined by Raman spectroscopy also confirmed the presence of the In₂S₃ phase in our samples. According to SEM, the surface morphologies of the films were free of defects. The optical band gap energy varied from 2.82 eV to 2.95 eV.     

Interface effects on Gd induced disordering of Co films on Pt(111)

Amorphization of epitaxial Co thin films grown on top of a Pt(111) surface has been studied by surface X-ray diffraction after deposition of Gd overlayers. The results indicate strong differences of the disordering process depending on the thickness of the Co film. First basic difference is that thick Co films (15 atomic layers) are only partially amorphized by 4 atomic layers of Gd on top of them, whereas thinner Co films (5 atomic layers) are completely disordered by just 2 atomic layers of Gd. Moreover, amorphization by Gd overlayers induces different stress relaxation processes in both cases. For 15 atomic layers thick Co films a preferential amorphization of the more strained Co grains is observed, leading to an effective relaxation of about ? 0.5% of the in-plane lattice parameter during amorphization, approaching its relaxed value. On the contrary, for 5 atomic layers thick Co films, the initial steps of disordering are accompanied by a stronger increase of the in-plane lattice constant, by about 1.4%, typical of Co–Pt interface alloy formation, followed by a complete amorphization. Furthermore, the magnetic characterization, carried out by magneto-optical Kerr effect and resonant magnetic surface X-ray diffraction, strongly supports that the amorphization of thin Co films is changing the nature of the Co/Pt interface. In particular, as Gd overlayers are deposited, and the amorphization proceeds, the structural disordering of the Co/Pt interface flips its characteristic perpendicular magnetic anisotropy toward in-plane orientation before the complete magnetic depolarization of the interface Pt atoms is reached. All these results confirm a marked dependence of amorphization processes on film thickness, which can be related to the enhanced influence of the nearby film/substrate interface.