| 基片温度对磁控溅射HfO2薄膜结构和性能影响分析 |
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| 引用本文： | 惠迎雪,刘政,王钊,刘卫国,徐均琪.基片温度对磁控溅射HfO2薄膜结构和性能影响分析[J].应用光学,2016,37(6):872-879. |
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| 作者姓名： | 惠迎雪 刘政 王钊 刘卫国 徐均琪 |
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| 作者单位： | 1.西安工业大学 光电工程学院,陕西 西安710021; |
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| 基金项目： | 国家自然科学基金项目(61378050);陕西省科技厅重点实验室项目（2013SZS14 Z02）;陕西省教育厅重点实验室科研计划（15JS032） |
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| 摘 要： | 在纯氧条件下，采用直流磁控溅射技术在单晶硅基片上沉积氧化铪（HfO2）薄膜，并研究了沉积过程中基片温度对薄膜结构和性能的影响规律。利用X射线衍射仪（XRD）和X射线能谱（XPS）表征了薄膜的晶体结构和组分，利用原子力显微镜（AFM）观察薄膜表面形貌，利用纳米力学测试系统表征了薄膜的纳米硬度和弹性模量。结果表明:磁控溅射制备的HfO2薄膜样品呈(111)择优生长，其晶粒尺寸随着基片温度的升高而增大，但其晶型并不发生转变。随着基片温度的增加，基片中的硅元素向薄膜内扩散，影响了薄膜的化学计量比。沉积薄膜的表面形貌和力学性能亦受到其结构和组分变化的影响。在200 ℃条件下制备的HfO2薄膜纯度高，O、Hf元素化学计量达到了1.99，其表面质量和力学性能均达到了最佳值，随着基片温度升高至300 ℃以上，薄膜纯度下降，表面质量和力学性能均产生劣化。
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| 关 键 词： | HfO2薄膜 磁控溅射 晶体结构 组分 纳米力学性能 |
| 收稿时间： | 2016-06-02 |
Effect of substrate temperature on structure and properties of HfO2 thin films prepared by magnetron sputtering |
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| Affiliation: | 1.School of Optoelectronic Engineering,Xi’an Technological University,Xi’an 710021,China;2.Xi’an Institute of Optics and Precision Mechanics,CAS,Xi’an 710119,China;3.Femto Technology (Xi’an) Co.,Ltd.,Xi’an 710119,China |
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| Abstract: | HfO2 thin films were deposited on single crystalline silicon substrate by using magnetron sputtering in totally reactive oxygen plasma. Effect of substrate temperatures on the structure and properties of HfO2 films were investigated. Phase structure, component and surface topography were characterized by using the X ray diffraction analysis (XRD), X ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM), respectively. The mechanical properties of the films were measured by using the nano indentation. It is indicated that the (111) oriented HfO2 films could be obtained and the structure of the as deposited films was not changed as the increase of the substrate temperature. The stoichiometric ratio, surface topography and nano mechanical properties of the as deposited films were dependent on the substrate temperature. The stoichiometric ratio would be deteriorated with the substrate temperature increasing, which was attributed to the diffusion of silicon. The best substrate temperature was found to be 200 ℃. The atom ratio of O/Hf for the as deposited films could arrive to be 1.99. In addition, the lowest value of root mean square(RMS) roughness and the maximum value of hardness and elastic modulus were obtained. |
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