共查询到20条相似文献,搜索用时 31 毫秒
1.
This paper reports that bunchy flake-like nano-graphite crystallite
films (BNGCFs) were deposited on Si substrates by using the microwave
chemical vapour deposition technique. Furthermore the BNGCFs were
characterized by x-ray diffraction spectra, scanning electron
microscopy, Raman spectra and field emission (FE) I--V
measurements, and a lowest turn-on field of 1.5V/μm, and a high
average emission current density of 30mA/cm* 相似文献
2.
Field emission characteristics of nano-sheet carbon films deposited by quartz-tube microwave plasma chemical vapour deposition 下载免费PDF全文
Nano-sheet carbon films are prepared on Si wafers by means of quartz-tube microwave plasma chemical vapour deposition (MPCVD) in a gas mixture of hydrogen and methane. The structure of the fabricated films is investigated by using field emission scanning electron microscope (FESEM) and Raman spectroscopy. These nano~carbon films are possessed of good field emission (FE) characteristics with a low threshold field of 2.6 V/μm and a high current density of 12.6 mA/cm^2 at an electric field of 9 V/μm. As the FE currents tend to be saturated in a high E region, no simple Fowler-Nordheim (F-N) model is applicable. A modified F N model considering statistic effects of FE tip structures and a space-charge-limited-current (SCLC) effect is applied successfully to explaining the FE data observed at low and high electric fields, respectively. 相似文献
3.
Low-field electron emission from pinaster-like MoO2 nanoarrays as two-stage emitters 总被引:1,自引:0,他引:1 下载免费PDF全文
Low-field electron emission is obtained from the pinaster-like MoO2 nanoarrays. The turn-on field of the pinasterlike MoO2 nanoarrays is found to be as low as 2.39 V/μm with the current density of 10μA/cm2. The enhancement factor is extracted to be 3590 from the Fowler-Nordheim plot. These excellent emission properties are attributed to the special structure of the pinaster-like MoO2 nanoarrays and confirmed by the calculation in the frame of the two -stage model. Our results show that the pinaster-like MoO2 nanoarrays are promising candidate in realizing field emission displays. 相似文献
4.
Judd-Oflet analysis of spectrum and laser performance of Ho:YAP crystal end-pumped by 1.91μm Tm:YLF laser 下载免费PDF全文
The Ho:YAP crystal is grown by the Czochralski technique.The room temperature polarized absorption spectra of Ho:YAP crystal was measured on a c cut sample with 1 at% holmium.According to the obtained Judd-Ofelt intensity parameters Ω2 = 1.42 × 10-20 cm2,Ω4 = 2.92 × 10-20 cm2,and Ω6 = 1.71 × 10-20 cm2,this paper calculated the fluorescence lifetime to be 6 ms for 5I7 →5 I8 transition,and the integrated emission cross section to be 2.24×10-18 cm2.It investigates the room temperature Ho:YAP laser end pumped by a 1.91 μm Tm:YLF laser.The maximum output power was 4.1 W when the incident 1.91 μm pump power was 14.4 W.The slope efficiency is 40.8%,corresponding to an optical to optical conversion efficiency of 28.4%.The Ho:YAP output wavelength was centred at 2118 nm with full width at half maximum of about 0.8 nm. 相似文献
5.
A chemical vapour deposition (CVD) diamond film detector was prepared and the main characteristics for pulsed proton detection were studied at Beijing Tandem Accelerator. The result shows that the charge collection efficiency of the detector increases with increasing electric field intensity and reaches to 9.44% at 5 V/μm with the charge collection distance of 15.9 μm. The relationship between the sensitivity of the detector and proton energy is consistent with the Monte Carlo (MC) simulation result. Its plasma time for a pulse with 4.85×10^5 protons is 1l.2ns. The dose threshold for onset of damage under 9MeV proton irradiation in the detector is about 10^13 cm^-2. All of the results show that a CVD diamond detector has fast time response and high radiation hardness, and can be used in pulsed proton detection. 相似文献
6.
High density Al2O3/TaN-based metal--insulator-- metal capacitors in application to radio frequency integrated circuits 下载免费PDF全文
Metal-insulator-metal (MIM) capacitors with atomic-layer-deposited Al2O3 dielectric and reactively sputtered TaN electrodes in application to radio frequency integrated circuits have been characterized electrically. The capacitors exhibit a high density of about 6.05 fF/μm^2, a small leakage current of 4.8 × 10^-8 A/cm^2 at 3 V, a high breakdown electric field of 8.61 MV/cm as well as acceptable voltage coefficients of capacitance (VCCs) of 795 ppm/V2 and 268ppm/V at 1 MHz. The observed properties should be attributed to high-quality Al2O3 film and chemically stable TaN electrodes. Further, a logarithmically linear relationship between quadratic VCC and frequency is observed due to the change of relaxation time with carrier mobility in the dielectric. The conduction mechanism in the high field ranges is dominated by the Poole-Frenkel emission, and the leakage current in the low field ranges is likely to be associated with trap-assisted tunnelling. Meanwhile, the Al2O3 dielectric presents charge trapping under low voltage stresses, and defect generation under high voltage stresses, and it has a hard-breakdown performance. 相似文献
7.
Judd--Ofelt analysis of spectra and experimental evaluation of laser performance of Tm3+ doped Lu2SiO5 crystal 下载免费PDF全文
This paper reports that the Tm^3+:Lu2SiO5 (Tm:LSO) crystal is grown by Czochralski technique. The roomtemperature absorption spectra of Tm:LSO crystal are measured on a b-cut sample with 4 at.% thulium. According to the obtained Judd-Ofelt intensity parameters Ω2=9.3155×10^-20 cm^2, Ω4=8.4103×10^-20 cm^2, Ω6=1.5908×10^-20 cm^2, the fluorescence lifetime is calculated to be 2.03 ms for ^3F4 → ^3H6 transition, and the integrated emission cross section is 5.81×10^-18 cm^2. Room-temperature laser action near 2μm under diode pumping is experimentally evaluated in Tm:LSO. An optical-optical conversion efficiency of 9.1% and a slope efficiency of 16.2% are obtained with continuouswave maximum output power of 0.67 W. The emission wavelengths of Tm:LSO laser are centred around 2.06μm with spectral bandwidth of -13.6 nm. 相似文献
8.
High quality Ge was epitaxially grown on Si using ultrahigh
vacuum/chemical vapor deposition (UHV/CVD). This paper demonstrates
efficient germanium-on-silicon p-i-n photodetectors with 0.8~μm
Ge, with responsivities as high as 0.38 and 0.21~A/W at 1.31 and
1.55~μ m, respectively. The dark current density is
0.37~mA/cm2 and 29.4~mA/cm2 at 0~V and a reverse bias of
0.5~V. The detector with a diameter of 30~μ m, a
3~dB-bandwidth of 4.72~GHz at an incident wavelength of 1550~nm and
zero external bias has been measured. At a reverse bias of 3~V, the
bandwidth is 6.28~GHz. 相似文献
9.
Investigation of transport properties of perovskite single crystals by pulsed and DC bias transient current technique 下载免费PDF全文
Time-of-flight (ToF) transient current method is an important technique to study the transport characteristics of semiconductors. Here, both the direct current (DC) and pulsed bias ToF transient current method are employed to investigate the transport properties and electric field distribution inside the MAPbI$_{3}$ single crystal detector. Owing to the almost homogeneous electric field built inside the detector during pulsed bias ToF measurement, the free hole mobility can be directly calculated to be about 22 cm$^{2}\cdot$V$^{-1}\cdot$s$^{-1}$, and the hole lifetime is around 6.5 μs-17.5 μs. Hence, the mobility-lifetime product can be derived to be $1.4\times 10^{-4}$ cm$^{2}\cdot$V$^{-1}$-$3.9\times 10^{-4}$ cm$^{2}\cdot$V$^{-1}$. The transit time measured under the DC bias deviates with increasing voltage compared with that under the pulsed bias, which arises mainly from the inhomogeneous electric field distribution inside the perovskite. The positive space charge density can then be deduced to increase from 3.1$\times10^{10}$ cm$^{-3}$ to 6.89$\times 10^{10}$ cm$^{-3}$ in a bias range of 50 V-150 V. The ToF measurement can provide us with a facile way to accurately measure the transport properties of the perovskite single crystals, and is also helpful in obtaining a rough picture of the internal electric field distribution. 相似文献
10.
Large scale, high density boron carbide nanowires have been synthesized by using an improved carbothermal reduction method with B/B203/C powder precursors under an argon flow at 1100℃. The boron carbide nanowires are 5-10 μm in length and 80-100 nm in diameter. Transmission electron microscopy (TEM) and selected area electron diffraction (SAED) characterizations show that the boron carbide nanowire has a B4C rhombohedral structure with good crystallization. The Raman spectrum of the as-grown boron carbide nanowires is consistent with that of a B4C structure consisting of B11C icosahedra and C-B-C chains. The room temperature photoluminescence spectrum of the boron carbide nanowires exhibits a visible range of emission centred at 638 nm. 相似文献
11.
This paper reports that a novel type of suspended ZnO nanowire field-effect
transistors (FETs) were successfully fabricated using a
photolithography process, and their electrical properties were
characterized by I--V measurements. Single-crystalline ZnO
nanowires were synthesized by a hydrothermal method, they were used
as a suspended ZnO nanowire channel of back-gate field-effect
transistors (FET). The fabricated suspended nanowire FETs showed a
p-channel depletion mode, exhibited high on--off current ratio of
~105. When VDS=2.5 V, the peak transconductances
of the suspended FETs were 0.396 μS, the oxide capacitance was
found to be 1.547 fF, the pinch-off voltage VTH was about
0.6 V, the electron mobility was on average 50.17 cm2/Vs. The
resistivity of the ZnO nanowire channel was estimated to be
0.96× 102Ω cm at VGS = 0 V. These
characteristics revealed that the suspended nanowire FET fabricated
by the photolithography process had excellent performance. Better
contacts between the ZnO nanowire and metal electrodes could be
improved through annealing and metal deposition using a focused ion
beam. 相似文献
12.
13.
Cathodic shift of onset potential on TiO2 nanorod arrays with significantly enhanced visible light photoactivity via nitrogen/cobalt co-implantation 下载免费PDF全文
Xianyin Song 《中国物理 B》2021,30(5):58505-058505
Despite anionic doping has been widely implemented to increase the visible light activity of TiO$_{2}$, it often gives rise to a dramatical anodic shift in current onset potential. Herein, we show an effective method to achieve the huge cathodic shift of TiO$_{2}$ photoanode with significantly enhanced visible light photo-electrochemical activity by nitrogen/cobalt co-implantation. The nitrogen/cobalt co-doped TiO$_{2}$ nanorod arrays (N/Co-TiO$_{2}$) exhibit a cathodic shift of 350 mV in onset potential relative to only nitrogen-doped TiO$_{2}$ (N-TiO$_{2}$). Moreover, the visible-light ($\lambda >420 $ nm) photocurrent density of N/Co-TiO$_{2}$ reaches 0.46 mA/cm$^{2}$, far exceeding 0.07 mA/cm$^{2}$ in N-TiO$_{2}$ at 1.23 V $versus$ reversible hydrogen electrode (RHE). Systematic characterization studies demonstrate that the enhanced photo-electrochemical performance can be attributed to the surface synergic sputtering of high-energy nitrogen/cobalt ions. 相似文献
14.
The Ni/4H-SiC Schottky barrier diodes (SBDs) and transfer length
method (TLM) test patterns of Ni/4H-SiC Ohmic contacts were
fabricated, and irradiated with 1~MeV electrons up to a dose of
3.43× 1014~e/cm-2. After radiation, the forward
currents of the SBDs at 2~V decreased by about 50%, and the
reverse currents at -200~V increased by less than 30%. Schottky
barrier height (φ B ) of the Ni/4H-SiC SBD increased
from 1.20~eV to 1.21~eV under 0~V irradiation bias, and decreased
from 1.25~eV to 1.19~eV under -30~V irradiation bias. The
degradation of φ B could be explained by the variation
of interface states of Schottky contacts. The on-state resistance
(Rs) and the reverse current increased with the dose, which
can be ascribed to the radiation defects in bulk material. The
specific contact resistance (\rhoc) of the Ni/SiC Ohmic
contact increased from 5.11× 105~Ωega.cm2 to 2.97× 10-4~Ωega.cm2. 相似文献
15.
Density functional theory (DFT) (B3p86) has been used to optimize the structure of the molecule Ta2. The result shows that the ground state of molecule Ta2 is a 7-multiple state and its electronic configuration is ^7∑u^+, which shows the spin polarization effect for molecule Ta2 of transition metal elements for the first time. Meanwhile, spin pollution has not been found because the wavefunction of the ground state does not mix with those of higher states. So, the fact that the ground state of molecule Ta2 is a 7-multiple state indicates a spin polarization effect of molecule Ta2 of the transition metal elements, i.e. there exist 6 parallel spin electrons and the non-conjugated electrons are greatest in number. These electrons occupy different space orbitals so that the energy of molecule Ta2 is minimized. It can be concluded that the effect of parallel spin of the molecule Ta2 is larger than the effect of the conjugated molecule, which is obviously related to the effect of d-electron delocalization. In addition, the Murrell-Sorbie potential functions with parameters for the ground state ^7∑u^+ and other states of the molecule Ta2 are derived. The dissociation energy De, equilibrium bond length Re and vibration frequency we for the ground state of molecule Ta2 are 4.5513eV, 0.2433nm and 173.06cm^-1, respectively. Its force constants f2, f3 and f4 are 1.5965×10^2aJ.nm^-2, -6.4722×10^3aJ·nm^-3 and 29.4851×10^4aJ·nm^-4, respectively. Other spectroscopic data we xe, Be and αe for the ground state of Ta2 are 0.2078cm^-1, 0.0315 cm^-1 and 0.7858×10^-4 cm^-1, respectively. 相似文献
16.
Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-K/low-K compound dielectric structure 下载免费PDF全文
Kuiyuan Tian 《中国物理 B》2023,32(1):17306-017306
A vertical junction barrier Schottky diode with a high-$K$/low-$K$ compound dielectric structure is proposed and optimized to achieve a high breakdown voltage (BV). There is a discontinuity of the electric field at the interface of high-$K$ and low-$K$ layers due to the different dielectric constants of high-$K$ and low-$K$ dielectric layers. A new electric field peak is introduced in the n-type drift region of junction barrier Schottky diode (JBS), so the distribution of electric field in JBS becomes more uniform. At the same time, the effect of electric-power line concentration at the p-n junction interface is suppressed due to the effects of the high-$K$ dielectric layer and an enhancement of breakdown voltage can be achieved. Numerical simulations demonstrate that GaN JBS with a specific on-resistance ($R_{\rm on, sp}$) of 2.07 m$\Omega\cdot$cm$^{2}$ and a BV of 4171 V which is 167% higher than the breakdown voltage of the common structure, resulting in a high figure-of-merit (FOM) of 8.6 GW/cm$^{2}$, and a low turn-on voltage of 0.6 V. 相似文献
17.
Cluster-assisted generation of multicharged ions in nanosecond laser ionization of carbon bisulfide clusters at 1064nm 下载免费PDF全文
The photoionization of seeded carbon bisulfide molecular beam by a
1064\,nm nanosecond Nd-YAG laser with intensities varying from
$0.8\times10^{11}$ to $5.6\times10^{11}$\,W/cm$^{2}$ have been
studied by time-of-flight mass spectrometry. Multiply charged ions
of S$^{q + }$ ($q$ = 2--6) and C$^{q +}$ ($q$ = 2--4) with kinetic
energy of hundreds of electron volts have been observed, and there
are strong experimental evidences indicating that those multicharged
ions originate from the ionization of CS$_{2}$ neat clusters in the
beam. An electron recolliding ionization model is proposed to
explain the appearance of those multiply charged atomic ions under
such low laser intensities. 相似文献
18.
Dynamical study on charge injection and transport in a metal/polythiophene/metal structure 下载免费PDF全文
The dynamical process of charge injection from metal electrode to a nondegenerate polymer in a metal/polythiophene (PT)/metal structure has been investigated by using a nonadiabatic dynamic approach. It is found that the injected charges form wave packets due to the strong electron-lattice interaction in PT. We demonstrate that the dynamical formation of the wave packet sensitively depends on the strength of applied voltage, the electric field, and the contact between PT and electrode. At a strength of the electric field more than 3.0 × 10^4 V/cm, the carriers can be ejected from the PT into the right electrode. At an electric field more than 3.0 × 10^5 V/cm, the wave packet cannot form while it moves rapidly to the right PT/metal interface. It is shown that the ejected quantity of charge is noninteger. 相似文献
19.
A single layer of CoFeB and a multilayer of CoFeB--MgO films are
prepared by means of DC/RF magnetron sputter deposition. The
excellent microwave properties and high electrical resistivity are
simultaneously achieved in the discontinuous multilayer structure of
[Co44Fe44B12(0.7nm)/MgO(0.4nm)]_{40} film. This
film has a high permeability ({μ \prime }) (larger than 100
below 2.1GHz), a high magnetic loss (μ') (larger than 100 in
a range from 1.5 to 3.3GHz), a resistivity of 3.3× 10* 相似文献
20.
Polymers are a kind of attractive hosts for laser dyes due to their
high transparency in both pumping and lasing ranges and superior
optical homogeneity. In this paper solid dye samples based on
polymethyl methacrylate (PMMA) doped with different concentrations of
1, 3, 5, 7, 8 -pentamethyl-2, 6-diethylpyrromethene-BF$_{2 }$ (PM567)
are prepared. The absorption, fluorescence and lasing spectra of the
samples are obtained. Wide absorption and fluorescence bands are
obtained and a red shift of the maxima of the lasing emission spectra
is observed. With the second-harmonic generation of Q-switched Nd:YAG
laser (532\,nm, $\sim $20\,ns) pumping the samples longitudinally,
the slope efficiencies of the samples are obtained. There is an
optimal dye concentration for the highest slope efficiency when the
pumping energy is lower than some typical value ($\sim $250\,mJ), and
the highest slope efficiency 35.6{\%} is obtained in the sample with
a dye concentration of $2\times10^{ - 4}$\,mol/L. Pumping the samples
at a rate of 10Hz with a pulse energy as high as 200\,mJ (the fluence
is 0.2\,J/cm$^{2})$, the output energy drops to one-half of its
initial value after approximate 15500 pulses and the normalized
photostability is 5.17\,GJ/mol. A kind of solid dye laser which could
have some applications is built. 相似文献