破片撞击装药点火实验和数值模拟

实验中采用升 降法得到了破片撞击装药点火的临界速度范围，数值模拟中采用节点约束 分离方法、热弹塑性材料本构方程和化学动力学方程描述了炸药的破坏行为和点火反应。实验结果与数值模拟结果吻合较好。研究结果表明，采用节点约束 分离方法、热弹塑性材料本构方程和化学动力学方程可以有效地描述装药在破片撞击作用下的破坏行为和点火反应。     

便携式无线人体脂肪率测量仪的设计

生物电阻抗法(BIA)是一种安全非侵入式的、结果可靠有效的人体组成成分(脂肪含量)测量方法。以此为原理,设计了一款便携式无线人体脂肪率测量仪。硬件上,系统以高集成化、低功耗的阻抗测量芯片AD5933为核心,通过蓝牙实现与上位机的无线通信,大大降低了设备的复杂度。软件部分提出一种单频点小阻抗范围的增益系数校准方式,计算量小且容易实现。将新测量仪和欧姆龙体脂仪HBF-358进行对比实验,并作Bland-Altman一致性分析。结果表明,二者的相关系数为0.997。此外,该测量仪还具有易操作、小型化的特点。     

The research on suspended ZnO nanowire field-effect transistor

This paper reports that a novel type of suspended ZnO nanowire field-effect transistors (FETs) were successfully fabricated using a photolithography process, and their electrical properties were characterized by I-V measurements. Single-crystalline ZnO nanowires were synthesized by a hydrothermal method, they were used as a suspended ZnO nanowire channel of back-gate field-effect transistors (FET). The fabricated suspended nanowire FETs showed a p-channel depletion mode, exhibited high on-off current ratio of ～105. When VDS = 2.5 V, the peak transconductances of the suspended FETs were 0.396 μS, the oxide capacitance was found to be 1.547 fF, the pinch-off voltage VTH was about 0.6 V, the electron mobility was on average 50.17 cm2/Vs. The resistivity of the ZnO nanowire channel was estimated to be 0.96 × 102Ωcm at VGS = 0 V. These characteristics revealed that the suspended nanowire FET fabricated by the photolithography process had excellent performance. Better contacts between the ZnO nanowire and metal electrodes could be improved through annealing and metal deposition using a focused ion beam.     

一种新的磷化铟复合沟道高电子迁移率晶体管小信号物理模型

针对磷化铟(InP)复合沟道高电子迁移率晶体管(HEMT)的特点，对常规单沟道HEMT的小信号物理模型进行了修正，提出了一种新的用于复合沟道HEMT的小信号物理模型，用商用器件模拟软件ISE(integrated systems engineering)对其进行了仿真验证，对比了实测和仿真的I-V特性及转移特性曲线，重点研究了在InGaAs/InP双层沟道中考虑量子效应后的电场和电流密度随着不同栅电压的变化趋势，研究结果表明，由于在沟道中存在量子效应，在栅下靠源端低电场区域，电流主要分布在InGaAs沟道 关键词： 高电子迁移率晶体管 复合沟道 物理模型 磷化铟     

0.351μm激光辐照Au盘靶吸收、散射规律的实验研究

在“星光Ⅱ”激光装置上，利用80只分立式探测器研究了约0.8ns，0.351μm激光辐照Au盘靶的吸收、散射．结果表明，强度约为5×10¹⁴W/cm²的激光以10°角入射，吸收可达90%以上；但是，以45°角入射，吸收仅为75%左右，散射高达25%．散射主要来自未被等离子体充分吸收的激光在弯曲临界面上的反射，同时伴随少量受激布里渊散射．吸收的理论计算与实验结果进行了比较，两者符合较好． 关键词：     

强激光在高Z等离子体中吸收的波长关系

利用“神光Ⅰ”输出的～５００Ｊ、１．０５μｍ，～２００Ｊ、０．５３μｍ激光和“星光Ⅱ”输出的～７０Ｊ、０．３５１μｍ激光，实验研究了激光与金圆盘靶作用产生的等离子体对激光的吸收，获得了激光１０°、４５°入射Ａｕ盘靶吸收的波长关系。实验结果与一维平面等离子体吸收模型计算的结果基本相符。     

应用安培检测-流动注射分析法快速测定制革废液中的硫

采用安培检测－流动注射分析法快速测定制革浸灰，脱毛工序废液中的硫的含量，与常规的铁氰化钾法相比，不仅分析速度快（３０－６０ｓ），测定准确，而且精度和灵敏度高，检测下限为０．１０μｍｏｌ／Ｌ，在制革工业中有广阔的应用前景。     

聚吡咯/还原氧化石墨烯复合物的合成及电容性能

通过原位聚合方法制备不同配比的聚吡咯/氧化石墨(Ppy/GO)复合物,将其用NaBH4还原得到聚吡咯/还原氧化石墨烯(Ppy/RGO)复合物,采用X射线衍射、红外光谱和场发射扫描电子显微镜(FESEM)对其结构和形貌进行物理表征.采用循环伏安、恒电流充放电和交流阻抗等电化学方法系统研究了所制备样品的电化学性能.实验结果表明,在电流密度为0.5A/g、吡咯(Py)与GO质量比为95∶5时,得到的复合物还原前后比电容分别可达401.5和314.5F/g,远高于单纯的GO(34.8F/g)和Ppy(267.5F/g).经过1200圈循环稳定性测试后,Ppy/RGO复合物比电容保持了原来的62.5％,与Ppy和Ppy/GO(电容保持率分别为16.8％和46.4％)相比,Ppy/RGO表现出更好的循环稳定性能,有望成为超级电容器电极材料.     

丹参超微粉碎前后丹参酮ⅡA的溶出行为比较

采用高效液相色谱法测定丹参超微粉体和常规粉体中丹参酮ⅡA体外溶出量和溶出速率.丹参超微粉体和常规粉体中丹参酮ⅡA体外溶出量无显著性差异,超微粉体的溶出速率较常规粉体明显增加.实验表明超微粉碎可明显提高丹参酮ⅡA溶出速率.     

Device research on GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistors grown by metal organic chemical vapour deposition

This paper applies a novel quad-layer resist and e-beam lithography technique to fabricate a GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistor(HEMT) grown by metal organic chemical vapour deposition(MOCVD).The gate length of the metamorphic HEMT was 150 nm,the maximum current density was 330 mA/mm,the maximum transconductance was 470 mS/mm,the threshold voltage was-0.6 V,and the maximum current gain cut-off frequency and maximum oscillation frequency were 102 GHz and 450 GHz,respectively.This is the first report on tri-termination devices whose frequency value is above 400 GHz in China.The excellent frequency performances promise the possibility of metamorphic HEMTs grown by MOCVD for millimetre-wave applications,and more outstanding device performances would be obtained after optimizing the material structure,the elaborate T-gate and other device processes further.