The research on suspended ZnO nanowire field-effect transistor |
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Authors: | Li Ming Zhang Hai-Ying Guo Chang-Xin Xu Jing-Bo and Fu Xiao-Jun |
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Affiliation: | Department of Physics, University of Science and
Technology of China,
Hefei 230026, China; Institute of Microelectronics, Chinese Academy
of Sciences, Beijing
100029, China |
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Abstract: | This paper reports that a novel type of suspended ZnO nanowire field-effect
transistors (FETs) were successfully fabricated using a
photolithography process, and their electrical properties were
characterized by $I$--$V$ measurements. Single-crystalline ZnO
nanowires were synthesized by a hydrothermal method, they were used
as a suspended ZnO nanowire channel of back-gate field-effect
transistors (FET). The fabricated suspended nanowire FETs showed a
p-channel depletion mode, exhibited high on--off current ratio of
$\sim$10$^{5}$. When $V_{\rm DS}=2.5$\,V, the peak transconductances
of the suspended FETs were 0.396\,$\mu $S, the oxide capacitance was
found to be 1.547\,fF, the pinch-off voltage $V_{\rm TH}$ was about
0.6\,V, the electron mobility was on average 50.17\,cm$^{2}$/Vs. The
resistivity of the ZnO nanowire channel was estimated to be
$0.96\times 10^{2}~\Omega $\,cm at $V_{\rm GS} = 0$\,V. These
characteristics revealed that the suspended nanowire FET fabricated
by the photolithography process had excellent performance. Better
contacts between the ZnO nanowire and metal electrodes could be
improved through annealing and metal deposition using a focused ion
beam. |
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Keywords: | ZnO nanowire back-gate suspended field-effect transistor |
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