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Device research on GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistors grown by metal organic chemical vapour deposition 下载免费PDF全文
This paper applies a novel quad-layer resist and e-beam
lithography technique to fabricate a GaAs-based InAlAs/InGaAs
metamorphic high electron mobility transistor (HEMT) grown by metal
organic chemical vapour deposition (MOCVD). The gate length of
the metamorphic HEMT was 150~nm, the maximum current density was
330~mA/mm, the maximum transconductance was 470~mS/mm, the threshold
voltage was -0.6~V, and the maximum current gain cut-off frequency
and maximum oscillation frequency were 102~GHz and 450~GHz,
respectively. This is the first report on tri-termination devices
whose frequency value is above 400~GHz in China. The excellent
frequency performances promise the possibility of metamorphic HEMTs
grown by MOCVD for millimetre-wave applications, and more
outstanding device performances would be obtained after optimizing
the material structure, the elaborate T-gate and other device
processes further. 相似文献
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This paper reports that a novel type of suspended ZnO nanowire field-effect
transistors (FETs) were successfully fabricated using a
photolithography process, and their electrical properties were
characterized by I--V measurements. Single-crystalline ZnO
nanowires were synthesized by a hydrothermal method, they were used
as a suspended ZnO nanowire channel of back-gate field-effect
transistors (FET). The fabricated suspended nanowire FETs showed a
p-channel depletion mode, exhibited high on--off current ratio of
~105. When VDS=2.5 V, the peak transconductances
of the suspended FETs were 0.396 μS, the oxide capacitance was
found to be 1.547 fF, the pinch-off voltage VTH was about
0.6 V, the electron mobility was on average 50.17 cm2/Vs. The
resistivity of the ZnO nanowire channel was estimated to be
0.96× 102Ω cm at VGS = 0 V. These
characteristics revealed that the suspended nanowire FET fabricated
by the photolithography process had excellent performance. Better
contacts between the ZnO nanowire and metal electrodes could be
improved through annealing and metal deposition using a focused ion
beam. 相似文献
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用密度梯度量子模型定量研究了磷化铟(InP)复合沟道高电子迁移率晶体管(HEMT)的击穿特性,考虑了复合沟道内碰撞电离以及沟道量子效应,重点研究了器件击穿电压随In0.7Ga0.3As沟道厚度的变化关系,提出了提高击穿电压的方法,采用商用器件模拟软件Sentaurus模拟了器件的开态击穿电压,对比了实验和模拟的结果. 研究表明:适当减小In0.7Ga0.3As沟道层的厚度可以在保持器件饱和电流基本不变的前提下大幅度提高开态击穿电压,这对于提高InP基HEMT的功率性能具有重要意义.
关键词:
磷化铟
高电子迁移率晶体管
密度梯度模型
击穿 相似文献
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Characterization of ZnO nanowire field-effect transistors and exposed to ultraviolet radiation 下载免费PDF全文
A ZnO nanowire (NW) field-effect transistor (FET) is
fabricated and characterized, and its characterization of
ultraviolet radiation is also investigated. On the one hand, when
the radiation time is 5~min, the radiation intensity increases
to 5.1~μ W/cm2, while the saturation drain current (I_\rm
dss) of the nanowire FET decreases sharply from 560 to 320~nA. The
field effect mobility (μ ) of the ZnO nanowire FET drops from
50.17 to 23.82~cm2/(V.s) at V_\rm DS=2.5~V, and
the channel resistivity of the FET increases by a factor of 2. On
the other hand, when the radiation intensity is 2.5~μ W/cm^2
, the DC performance of the FET does not change significantly with
irradiation time (its performances at irradiation times of 5 and
20~min are almost the same); in particular, the I_\rm dss of NW FET
only reduces by about 50~nA. Research is underway to reveal the intrinsic
properties of suspended ZnO nanowires and to explore their device
applications. 相似文献
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InAlAs/InGaAs Pseudomorphic High Eelectron Mobility Transistors Grown by Molecular Beam Epitaxy on the InP Substrate 下载免费PDF全文
A novel PMMA/PMGI/ZEP520 trilayer resist electron beam lithograph (EBL) technology is successfully developed and used to fabricate the 150 nm gate-length In0.7Ga0.3As/In0.52Al0.48As Pseudomorphic HEMT on an InP substrate, of which the material structure is successfully designed and optimized. A perfect profile of T?gate is successfully obtained. These fabricated devices demonstrate excellent dc and rf characteristics: the transconductance Gm, maximum saturation drain?to-source current IDSS, threshold voltage VT, maximum current gain frequency fT derived from h21, maximum frequency of oscillation derived from maximum available power gain/maximum stable gain and from unilateral power?gain of metamorphic InGaAs/InAlAs high electron mobility transistors (HEMTs) are 470 mS/mm, 560 mA/mm, -1.0 V, 76 GHz, 135 GHz and 436 GHz, respectively. The excellent high frequency performances promise the possibility of metamorphic HEMTs for millimeter-wave applications. 相似文献
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