氧化锌纳米线的场发射

热蒸发法在硅基底上制备了任意取向的氧化锌纳米线阵列。经过热蒸发过程，硅基底表面覆盖了大量均匀分布的氧化锌岛，在这些岛上生长出了直径为几十纳米的非定向纳米线。出于实用考虑，基底周围的温度在制备过程中保持在500°C以下。从这些氧化锌纳米线获得了场发射。测得10μA/cm2所对应的开启场强为3.0V/μm。并且用透明阳极技术研究了发射中心分布。观察到场发射来自于整个样品表面。从这些结果可以看出氧化锌纳米线在平板显示器中有着巨大的应用潜力.

Field emission from zinc oxide nanowires

An array of random-oriented zinc oxide nanowires (ZnO NWs) was fabricated on silicon substrate by thermal evaporation. After a thermal evaporation process, the silicon substrate was covered with a large number of uniformly distributed ZnO islands, from which non-aligned NWs with a diameter of several ten nanometres were grown. During this process, the temperature around the substrate was intentionally kept below 500$^\circ$C for practical consideration. From these ZnO NWs field emission was achieved. The turn-on field, under which a 10$\mu $A/cm$^{2}$ current density was extracted, was measured to be 3.0V/$\mu$m. Also, the emission site distribution was investigated using the transparent anode technique. The field emission was observed to have occurred from the whole sample surface. These results suggest that ZnO NWs have great potential application in flat panel displays.