Laser-induced phase conversion of n-type SnSe2 to p-type SnSe

We report a facile phase conversion method that can locally convert n-type SnSe₂ into p-type SnSe by direct laser irradiation. Raman spectra of SnSe₂ flakes before and after laser irradiation confirm the phase conversion of SnSe₂ to SnSe. By performing the laser irradiation on SnSe₂ flakes at different temperatures, it is found that laser heating effect induces the removal of Se atoms from SnSe₂ and results in the phase conversion of SnSe₂ to SnSe. Lattice-revolved transmission electron microscope images of SnSe₂ flakes before and after laser irradiation further confirm such conversion. By selective laser irradiation on SnSe₂ flakes, a pattern with SnSe₂/SnSe heteostructures is created. This indicates that the laser induced phase conversion technique has relatively high spatial resolution and enables the creation of micron-sized in-plane p-n junction at predefined region.     

Intrinsic charge transport behaviors in graphene-black phosphorus van der Waals heterojunction devices

Heterostructures from mechanically-assembled stacks of two-dimensional materials allow for versatile electronic device applications. Here, we demonstrate the intrinsic charge transport behaviors in graphene-black phosphorus heterojunction devices under different charge carrier densities and temperature regimes. At high carrier densities or in the ON state,tunneling through the Schottky barrier at the interface between graphene and black phosphorus dominates at low temperatures. With temperature increasing, the Schottky barrier at the interface is vanishing, and the channel current starts to decrease with increasing temperature, behaving like a metal. While at low carrier densities or in the OFF state, thermal emission over the Schottky barrier at the interface dominates the carriers transport process. A barrier height of ~67.3 meV can be extracted from the thermal emission-diffusion theory.     

Organic molecules modified palladium nanowires arrays prepared by high temperature liquid phase reduction

This paper reports high temperature liquid phase synthesis of Pd nanowires using chemically modified porous anodic aluminium oxide as template. In this synthesis process, oleic acid is used to modify the inner wall of the pores and Pd^2＋ complex with oleylamine is filled into the channel of the template. The complex is then reduced to give oleylamine-capped Pd nanowires. This paper suggests that oleic acid can improve the environment of inner wall of the pores, leading to the formation of uniform Pd nanowires. The synthetic process can be extended to make other types of nanowires.     

Direct measurements of conductivity and mobility in millimeter-sized single-crystalline graphene via van der Pauw geometry

We report the direct measurements of conductivity and mobility in millimeter-sized single-crystalline graphene on SiO_2/Si via van der Pauw geometry by using a home-designed four-probe scanning tunneling microscope(4P-STM). The gate-tunable conductivity and mobility are extracted from standard van der Pauw resistance measurements where the four STM probes contact the four peripheries of hexagonal graphene flakes, respectively. The high homogeneity of transport properties of the single-crystalline graphene flake is confirmed by comparing the extracted conductivities and mobilities from three setups with different geometry factors. Our studies provide a reliable solution for directly evaluating the entire electrical properties of graphene in a non-invasive way and could be extended to characterizing other two-dimensional materials.     

Probing Field Emission from Boron Carbide Nanowires

High density boron carbide nanowires are grown by an improved carbon thermal reduction technique. Transmission electron microscopy and electron energy lose spectroscopy of the sample show that the synthesized nanowires are B4 C with good crystallization. The field emission measurement for an individual boron nanowire is performed by using a Pt tip installed in the focused ion beam system. A field emission current with enhancement factor of 10^6 is observed and the evolution process during emission is also carefully studied. Furthermore, a two-step field emission with stable emission current density is found from the high-density nanowire film. Our results together suggest that boron carbide nanowires are promising candidates for electron emission nanodevices.     

Single crystalline boron carbide nanobelts: synthesis and characterization

This paper reports that the large-scale single crystalline boron carbide nanobelts have been fabricated through a simple carbothermal reduction method with B/B2O3/C/Fe powder as precursors at 1100℃. Transmission electron microscopy and selected area electron diffraction characterizations show that the boron carbide nanobelt has a B4C rhomb-centred hexagonal structure with good crystallization. Electron energy loss spectroscopy analysis indicates that the nanobelt contains only B and C, and the atomic ratio of B to C is close to 4：1. High resolution transmission electron microscopy results show that the preferential growth direction of the nanobelt is [101]. A possible growth mechanism is also discussed.     

低维原子/分子晶体材料的可控生长、物性调控和原理性应用

本文介绍了高鸿钧课题组在物理所20年来的部分代表性工作.研究的主要方向为低维纳米功能材料的分子束外延可控制备、生长机制、物性调控及其在未来信息技术中的原理性应用.从材料的可控制备入手,结合第一性原理的理论计算,阐明材料生长机制和结构与物性的关系,进而实现物性调控和原理性应用.主要内容有:1)纳米尺度"海马"分形结构的形成及其生长机制;2)STM分辨率的提高及最高分辨Si(111)-7×7原子图像的获得;3)固体表面上功能分子的吸附、组装及其机制;4)稳定、重复、可逆的纳米尺度电导转变与超高密度信息存储;5)固体表面上单分子自旋态的量子调控及其原理性应用;6)原子尺度上朗德g因子的空间分辨及其空间分布不均匀性的发现;7)晶圆尺寸、高质量、单晶石墨烯的制备及原位硅插层绝缘化;8)几种新型二维原子晶体材料的可控构筑及其物性调控;9)"自然图案化"的新型二维原子晶体材料及其功能化.这些工作为低维量子结构的构造、物性调控及其原理性应用奠定了基础.     

Formation and photoluminescence properties of boron nanocones

This paper reports that a simple chemical vapour deposition method has been adopted to fabricate large scale, high density boron nanocones with thermal evaporation of B/B2O3 powders precursors in an Ar/H2 gas mixture at the synthesis temperature of 1000-1200℃. The lengths of boron nanocones are several micrometres, and the diameters of nanocone tops are in a range of 50-100 nm. transmission electron microscopy and selected area electron diffraction indicate that the nanocones are single crystalline α-tetragonal boron. The vapour liquid solid mechanism is the main formation mechanism of boron nanocones. One broad photolumineseence emission peak at the central wavelength of about 650 nm is observed under the 532 nm light excitation. Boron nanocones with good photoluminescence properties are promising candidates for applications in optical emitting devices.     

Low-Dimensional Forest-Like and Desert-Like Fractal Patterns Formed in a DDAN Molecular System

Two kinds of forest-like and desert-like patterns are formed by thermal evaporation of 4-dicyanovinyl-N, Ndimethylamino-1-naphthalene （DDAN） onto SiO2 substrates. Based on thermal kinetics of the molecules on the substrate the transformation between the forest and desert patterns is due to two factors. The first one is the diffusion length, which is related to the deposition rate, the diffusion potential energy barrier and the substrate temperature. The second one is the strong interaction between the two polarity chemical groups of the molecules, which is beneficial to the formation of branches. Totally different patterns are also found on mica substrates, and are attributed to the anisotropic diffusion and the stronger interaction between DDAN molecules and the mica surface.     

Bipolar Thermoelectrical Transport of SnSe Nanoplate in Low Temperature

Bulk SnSe is an excellent thermoelectrical material with the highest figure-of-merit value of ZT=2.&making it promising in applications.Temperature-dependent electrical and thermoelectrical properties of SnSe nanoplates are studied at low temperature.Conductivity drops and rises again as temperature is lowered.The Seebeck coefficient is positive at room temperature and becomes negative at low temperature.The change of the sign of the Seebeck coefficient indicates influence of bipolar transport of the semiconductive SnSe nanoplate.The bipolar transport is caused by the Fermi energy changing with temperature due to different contributions from donors and acceptors at different temperatures.