整齐排列的氧化锌纳米针阵列的场发射性能

采用简单的热蒸发方法,不使用任何催化剂,在硅基底上制备出了两种垂直于基底、整齐排列的氧化锌纳米针阵列.它们具有均匀的分布以及一致的取向和高度.场发射性能研究表明它们同时具有较低的开启和阈值场强,稳定的发射电流和长时间维持发射的能力.较低的开启和阈值场强来源于它们较高的长径比和较细的尖端;稳定发射电流和长时间维持发射的能力来源于它们在基底上均匀一致的分布以及由于较粗的根部带来的与基底的良好接触.实验结果表明整齐的氧化锌针状纳米结构阵列是一种理想的平面场发射材料. 关键词： 氧化锌 热蒸发 阵列场发射 屏蔽效应     

激光晶化形成纳米硅材料的场电子发射性质研究

利用KrF准分子激光退火超薄非晶硅膜,并结合热退火技术制备了单层纳米硅薄膜并研究了薄膜的场电子发射性质.在晶化形成的纳米硅薄膜中可以观测到稳定的场电子发射现象,其开启电场从原始淀积的非晶硅薄膜的17V/μm降低到8.5V/μm,而场发射电流密度可以达到0.1mA/cm².激光晶化后形成的纳米硅材料的场电子发射特性的改善可以从薄膜表面形貌的改变以及高密度纳米硅的形成所导致的内部电场增强作用来解释. 关键词： 纳米硅 场发射 激光晶化     

高表面粗糙度银纳米线的分形研究和SERS效应

为了获得分布均匀、有序排列、可重复性高的表面增强拉曼散射基底(SERS),选取银离子导体RbAg_4I_5薄膜,结合真空热蒸镀工艺和固态离子学方法在外加电流作用下制备出高表面粗糙度的银纳米线。同时,选取罗丹明6G(R6G)溶液作为探针分子,研究高表面粗糙度银纳米线作为SERS基底时的表面增强拉曼特性。实验结果表明:制备得到的银纳米线在宏观上呈现为树枝状,在微观上呈现为有序排列,并且其纳米结构的分形维数为1.59;采用银纳米线作为SERS基底时,能够检测到R6G溶液的浓度低至10~(-17) mol/L。制备的高表面粗糙度和有序密集排列的银纳米线SERS基底在环境科学等领域具有潜在的应用前景。     

单根砷掺杂氧化锌纳米线场效应晶体管的电学及光学特性

采用化学气相沉积（CVD）的方法在砷化镓基底上合成直径为20 nm左右、长约数十微米的氧化锌纳米线,然后采用热扩散的方法,将生长于砷化镓基底之上的氧化锌纳米线通过600 ℃,30 min的有氧退火处理后,获得了砷掺杂的氧化锌纳米线.将获得的掺杂后的氧化锌纳米线采用电子束曝光以及真空溅射镀膜的方法将钛/金合金作为接触电极引出,从而构建成场效应晶体管.文中研究了单根氧化锌纳米线砷掺杂前后的电学特性,证实了通过砷掺杂来获得p型的氧化锌纳米线的可行性.构建的p型砷掺杂氧化锌场效应晶体管的跨导为35 nA/V,载流 关键词： p型ZnO纳米线 砷掺杂 场效应晶体管 光致发光     

X射线光电子能谱法研究硅纳米线的能带结构

制备了氧辅助热分解法,以一氧化硅为原料,以氩气为载气,维持管内压强为1000Pa,在高温炉中于1250℃下反应5 h后得到硅纳米线。硅纳米线经5%氢氟酸水溶液处理5 min后,与1×10-3 mol·L-1的氯化金溶液中反应5 min,在硅纳米线的表面上修饰了金纳米粒子,用X射线粉末衍射表征了产物的结构,同时观察到单质硅和金的XRD图谱;用电子扫描和透射显微镜观察了产物的形貌,表明氧辅助方法可制得大量均匀的硅纳米线,修饰在硅纳米线上的金纳米点形状整齐,尺寸均匀,平均直径约8 nm;并用X射线光电子能谱分析了修饰过程中能带结构的变化。结果表明,金纳米粒子表面带负电,它在施主能级和受主能级上都有电子存在;由于氧杂质的存在,硅纳米线的费米能级移向价带顶。     

氧化锌纳米线的紫外光耦合增强场电子发射特性

本文采用热化学气相沉积方法制备氧化锌纳米线阵列, 研究氧化锌纳米线阵列在紫外光辐照下的场电子发射特性. 实验结果表明, 在紫外光辐照下, 氧化锌纳米线场发射开启电压降低, 发射电流明显增大. 机理分析认为, 氧化锌纳米线紫外光增强的场发射源自场电子发射与半导体耦合作用, 紫外光激发价带电子跃迁到导带和缺陷能级使发射电子数量增加, 同时, 光生电子发射降低了发射材料表面的有效功函数, 从而显著增强场电子发射性能. 氧化锌纳米线具有紫外光耦合增强场电子发射特性, 在光传感、冷阴极平板显示和场发射电子源等方面具有潜在的应用价值.     

真空热蒸发制备CdS/ZnS核/壳异质结纳米线

将传统的真空热蒸发镀膜实验加以改进,先以催化剂辅助蒸发制备出CdS纳米线,再将其作为模板,以ZnS为蒸发源物质,二次蒸发包覆ZnS层,成功制备出大量的CdS/ZnS核/壳异质结纳米线.经X射线衍射、X射线能量色散谱、透射电镜分析表明,所得CdS/ZnS异质结纳米线的核心部分为CdS单晶纳米线,外层为ZnS多晶层.本文的实验方法简便易行,所得纳米结构在光电纳米器件领域有一定应用前景.     

适用于强化液体相变换热的纳米结构的制备与调控

液体相变换热是高热流密度器件冷却的有效方式。本文提出了一种适用于强化液体相变换热的纳米结构的制备与调控方法。通过热溶液法生长出的氧化锌纳米线阵列结晶优良、物质纯净,并且可以通过不同的磁控溅射方式沉积种子层实现生长不同形貌的纳米线,进而改变表面的润湿性。多步生长的方法被用来调控纳米线阵列的尺寸,实现了对表面粗糙状况、核态沸腾核化点以及表面润湿性的进一步调控。本文同时利用氧化锌独特的光敏性质实现了从改变表面化学特性的角度调控表面润湿性。     

生长温度对纳米氧化锌场发射性能的影响

采用锌粉和银粉为蒸发源,用热蒸发法不同温度下制备了四针状纳米氧化锌,并以单独的锌粉做对照。采用扫描电子显微镜(SEM)观察其形貌,X射线衍射(XRD)谱表征其晶体结构。采用丝网印刷方法将其制备为场致电子发射阴极,将阴极与印刷有荧光粉的阳极板组装成二极结构场致发射显示屏,并进行了场致电子发射特性对比实验。结果表明较高温度制备的氧化锌具有较好的场致发射性能;掺杂银粉的蒸发源制备的样品的发射性能明显优于没有掺杂银粉的样品。实验证明ZnO是一种优良的场致发射冷阴极材料,在真空电子方面具有广阔的应用前景。     

Gd_2O_3∶Er/Yb纳米线、纳米片的制备与发光性质

采用水热法制备了Gd2O3∶Yb3 /Er3 纳米线和纳米片,并研究了制备过程中溶液的pH值对产物形貌的影响以及样品形貌对发光性质的影响。将稀土氧化物溶于硝酸并与NaOH反应,使溶液pH值至预期值,将生成物离心、烘干和灼烧,得到最终产物。研究发现,制备样品过程中,中性溶液中易于形成纳米片,而碱性溶液中则会形成纳米线,而且碱性越强越容易形成纳米线。在980nm激光激发下,与纳米片相比,纳米线中Er3 的4I13/2→4I15/2的红外发射强度显著减弱,而2H11/2/4S3/2→4I15/2和4F9/2→4I15/2的上转换发射相对增强,而且2H11/2/4S3/2→4I15/2与4F9/2→4I15/2的荧光分支比略有增大。纳米线与纳米片相比,比表面积减小,由表面效应引起的无辐射弛豫过程的减弱导致了上述光谱的变化。     

Preparation, structural and electrical properties of zinc oxide grown on silicon nanoporous pillar array

Polycrystalline thick film of zinc oxide (ZnO) is grown on a unique silicon substrate with a hierarchical structure, silicon nanoporous pillar array (Si-NPA), by using a vapour phase transport method. It is found that as-grown ZnO film is composed of closely packed ZnO crystallites with an average size of $\sim$10\,\mu$m. The film resistivity of ZnO/Si-NPA is measured to be $\sim$8.9\Omega\cdot$\,cm by the standard four probe method. The lengthwise $I$-$V$ curve of ZnO/Si-NPA heterostructure is measured. Theoretical analysis shows that the carrier transport across ZnO/Si-NPA heterojunction is dominated by two mechanisms, i.e. a thermionic process at high voltages and a quantum tunnelling process at low voltages.     

Surface enhanced Raman scattering and photoluminescence properties of catalytic grown ZnO nanostructures

Sword-like (diameter ranging from 40 nm to 300 nm) and needle-like zinc oxide (ZnO) nanostructures (average tip diameter ∼40 nm) were synthesized on annealed silver template over silicon substrate and directly on silicon wafer, respectively via thermal evaporation of metallic zinc followed by a thermal annealing in air. The surface morphology, microstructure, chemical analysis and optical properties of the grown samples were investigated by field emission scanning electron microscopy, X-ray diffraction, energy dispersive X-ray analysis, room temperature photoluminescence and Raman spectroscopy. The sword-like ZnO nanostructures grown on annealed silver template are of high optical quality compared to needle-like ZnO nanorods for UV emission and show enhanced Raman scattering.     

ZnO纳米带外延树枝状锯齿形缺口结构的制备及其发光特性

应用气固生长方式在没有催化剂的情况下合成出一种新奇的ZnO纳米结构．通过透射电子显微镜分析，发现这种ZnO纳米带外延晶枝直径约20 nm，在[0001]方向有着良好的外延生长取向．提出了一个模型来解释这种树枝状锯齿结构的生长．室温下光致发光测量表明这种ZnO纳米结构在382、491 nm处有一个紫外发光峰和绿光发光峰．     

Field emission from lotiform-like ZnO nanostructures synthesized via thermal evaporation method

Novel lotiform ZnO nanostructures were synthesized on silicon substrate via simple thermal evaporation. The average diameter of the ZnO nanostructures is ∼1.5 μm. The lotiform-like ZnO structures were formed by nanorods arrays with the average diameter of 70 nm. The as-grown lotiform ZnO nanostructures have excellent field-emission properties such as the low turn-on field of 3.4 V/μm, and very high emission current density of 12.4 mA/cm² at the field of 9.6 V/μm. These features make the lotiform-like ZnO nanostructures competitive candidates for field-emission-based displays. PACS 61.46.-w; 61.82.Rx; 78.67.-n; 73.63.Bd; 74.78.Na     

Synthesis and ultraviolet emission of aligned ZnO rod-on-rod nanostructures

Aligned ZnO rod-on-rod nanostructures were synthesized on silicon substrate via a simple thermal evaporation process at low temperature without catalysts. Pictures taken with the use of the scanning electron microscope demonstrate that the well-ordered ZnO rod-on-rod nanostructures grow on the Si substrate, and the single nanostructure consists of two parts. Transmission electron microscopy image and the selected area electron diffraction pattern indicate that the single-crystal nanorod grows along [0001] direction. The X-ray diffraction pattern proves that the samples have good crystal quality. The detailed nanorod growth mechanism is proposed and discussed. The room-temperature photoluminescence (PL) spectrum shows the dominant ultraviolet emission, which indicates their potential application in ultraviolet optoelectronic devices. The temperature-dependent PL spectra reveal that the strong ultraviolet emission should originate from the longitudinal optical phonon replicas of free exciton.     

Selective growth of ZnO nanowires on substrates patterned by photolithography and inkjet printing

Zinc oxide nanowires (ZnO NWs) were grown by a two-step growth method, involving the deposition of a patterned ZnO thin seeding layer and the chemical vapor deposition (CVD) of ZnO NWs. Two ways of patterning the seed layer were performed. The seeding solution containing ZnO precursors was deposited by sol–gel/spin-coating technique and patterned by photolithography. In the other case, the seeding solution was directly printed by inkjet printing only on selected portion of the substrate areas. In both cases, crystallization of the seed layer was achieved by thermal annealing in ambient air. Vertically aligned ZnO NWs were then grown by CVD on patterned, seeded substrates. The structure and morphology of ZnO NWs was analyzed by means of X-ray diffraction and field emission scanning electron microscopy measurements, respectively, while the vibrational properties were evaluated through Raman spectroscopy. Results showed that less-defective, vertically aligned, c-axis oriented ZnO NWs were grown on substrates patterned by photolithography while more defective nanostructures were grown on printed seed layer. A feature size of 30 µm was transferred into the patterned seed layer, and a good selectivity in growing ZnO NWs was obtained.     

Field emission and photoluminescence of ZnO nanocombs

Three kinds of new comb-shape nanostructures of ZnO have been grown on single silicon substrates without catalyst-assisted thermal evaporation of Zn and active carbon powders. The morphology and structure of the prepared nanorods are determined on the basis of field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM) and x-ray diffraction (XRD). The growth mechanism of the ZnO nanocombs can be explained on the basis of the vapor–solid (VS) processes. In nanocombs 1 and nanocombs 2, the comb teeth grow along [0001] and the comb stem grows along [ $01\overline{1}0$ ], while in nanocombs 3, nanoteeth grow along [ $01\overline{1}0$ ] and stem grows along [0001]. The photoluminescence and field-emission properties of ZnO nanocombs 1–3 have been investigated. The turn-on electric field of ZnO nanocombs 1–3, which is defined as the field required to producing a current density of 10 μA/cm², is 9, 7.7 and 7.1 V/μm, respectively. The field-emission performance relies not only on the tip’s radius of curvature and field enhancement factor, but also on the factor evaluating the degree of the screening effect.     

Physical analysis of normally-off ALD Al2O3/GaN MOSFET with different substrates using self-terminating thermal oxidation-assisted wet etching technique

Based on the self-terminating thermal oxidation-assisted wet etching technique, two kinds of enhancement mode Al$_{2}$O$_{3}$/GaN MOSFETs (metal-oxide-semiconductor field-effect transistors) separately with sapphire substrate and Si substrate are prepared. It is found that the performance of sapphire substrate device is better than that of silicon substrate. Comparing these two devices, the maximum drain current of sapphire substrate device (401 mA/mm) is 1.76 times that of silicon substrate device (228 mA/mm), and the field-effect mobility ($\mu_{\rm FEmax}$) of sapphire substrate device (176 cm$^{2}$/V$\cdot$s) is 1.83 times that of silicon substrate device (96 cm$^{2}$/V$\cdot$s). The conductive resistance of silicon substrate device is 21.2 $\Omega {\cdot }$mm, while that of sapphire substrate device is only 15.2 $\Omega {\cdot }$mm, which is 61% that of silicon substrate device. The significant difference in performance between sapphire substrate and Si substrate is related to the differences in interface and border trap near Al$_{2}$O$_{3}$/GaN interface. Experimental studies show that (i) interface/border trap density in the sapphire substrate device is one order of magnitude lower than in the Si substrate device, (ii) Both the border traps in Al$_{2}$O$_{3}$ dielectric near Al$_{2}$O$_{3}$/GaN and the interface traps in Al$_{2}$O$_{3}$/GaN interface have a significantly effect on device channel mobility, and (iii) the properties of gallium nitride materials on different substrates are different due to wet etching. The research results in this work provide a reference for further optimizing the performances of silicon substrate devices.     

Synthesis and optical characterization of vertically grown ZnO nanowires in high crystallinity through vapor-liquid-solid growth mechanism

The gas-phase growth and optical characteristics of 1-dimensional ZnO nanostructure have been investigated. The ZnO nanowires (NWs) were grown vertically on Au coated silicon substrates by vapor-liquid-solid (VLS) growth mechanism using chemical vapor deposition (CVD). The ZnO NWs were grown in the crystal direction of [0 0 0 1]. The ZnO NWs exhibit the uniform size of less than 100 nm in diameter and up to 5 μm in length. Photoluminescence (PL) spectrum of ZnO NWs shows the strong band-edge emission at ∼380 nm (∼3.27 eV) without significant deep-level defect emission. The exciton lifetime of ZnO NWs was measured to be approximately 150 ± 10 ps.