高质量CdSe单晶生长及其OPO性能研究

本文利用有籽晶的HPVGF法生长了尺寸为φb54 mm× 25 mm的高质量CdSe单晶,晶体为纤锌矿结构,(002)和(110)面的XRD摇摆曲线半高宽分别为54.4"和45.6".使用红外显微镜和扫描电镜-能谱分析仪对晶体内部的夹杂相进行测试,表明晶体内部存在小尺寸富Se夹杂相.CdSe晶片在2.5～20 μm范围内的透过率高于68;,平均吸收系数为0.037 cm-1.制备出尺寸为10mm×12 mm×50mm且满足第Ⅱ类相位匹配条件的CdSe晶柱,在重频1 kHz,波长2.09 μm的Ho∶ YAG调Q泵浦源激励下,实现了中心波长为11.47 μm,线宽为33.2 nm的激光输出,最大输出功率为389 mW.     

Resonantly pumped Q-switched Er:GdVO4 laser

We describe a Q-switched Er:GdVO₄ laser resonantly pumped by a MgO-doped periodically poled LiNbO₃ optical parametric oscillator （MgO: PPLN OPO） at 1536 nm. In continuous-wave lasing, the maximum output power is 1.14 W with an incident pump power of 4.7 W and a slope efficiency of 27%. In Q-switched operation, 1.1 mJ of output pulse energy is achieved at 200 Hz. The upper-state lifetime at different pulse repetition frequencies is also calculated.     

Passively mode-locked Tm,Ho:YVO4 laser based on a semiconductor saturable absorber mirror

We report the demonstration of passively continuous-wave mode-locking(CWML) of diode-pumped Tm,Ho:YV04 laser using an InGaAs/GaAs multiple quantum-well(MQW) structure semiconductor as the saturable absorber.Stable mode-locking pulses at the central wavelength of 2 041 nm are obtained. The maximum output power is 151 mW.The pulse duration is 10.5 ps at the repetition rate of 64.3 MHz.     

Comparative investigation of long-wave infrared generation based on ZnGeP2 and CdSe optical parametric oscillators

Long-wave infrared(IR) generation based on type-II(o→e+o) phase matching ZnGeP 2(ZGP) and CdSe optical parametric oscillators(OPOs) pumped by a 2.05 μm Tm,Ho:GdVO 4 laser is reported.The comparisons of the birefringent walk-off effect and the oscillation threshold between ZGP and CdSe OPOs are performed theoretically and experimentally.For the ZGP OPO,up to 419 mW output at 8.04 μm is obtained at the 8 kHz pump pulse repetition frequency(PRF) with a slope efficiency of 7.6%.This ZGP OPO can be continuously tuned from 7.8 to 8.5 μm.For the CdSe OPO,we demonstrate a 64 mW output at 8.9 μm with a single crystal 28 mm in length.     

Passively Q-Switched Tm,Ho：YVO4 Laser with Cr：ZnS Saturable Absorber at 2 μm

A stable diode-pumped passively Q-switched Tm,Ho：YVO4 laser with Cr：ZnS saturable absorber is reported. The shortest pulse duration of -500 ns with the central wavelength of 2041 nm is obtained at the pump power of 7.4 W, corresponding to the pulse energy of 3.5 μd at repetition rate of 65 kHz.     

A Diode-Pumped 1617 nm Single Longitudinal Mode Er：YAG Laser with Intra-Cavity Etalons

We demonstrate the continuous wave p-polarized single longitudinal mode （SLM） operation of an Er：YAG laser at 1617.6nm pumped by a diode-laser with three inserted Fabry-Perot （FP） etalons at room temperature. The Brewster angle inserted FP is applied to obtain the p-polarized laser. For free running, the maximum output power is 570 m W with a pump power of 12.5 W. An incident pump power of 12.5 W is used to generate the maximum p-polarized single longitudinal mode output power of 78.5 m W, corresponding to a slope efficiency of 1.6% and an optical-to-optical efficiency of 0.61%. The beam quality M2 is measured to be 1.15 at the highest SLM output power. This stable polarized SLM oscillation is encouraging due to its application for an injection-locked system used as a master laser.     

高脉冲重复频率调Q Tm,Ho:GdVO4激光器

报道了一个高效率连续波和调Q高重频两种运行方式的Tm,HoGdVO4激光器.Tm,HoGdVO4晶体尺寸4 mm×4 mm×7 mm,a轴通光,液氮制冷到100 K,由发射中心波长为793 nm的光纤耦合激光二极管端面泵浦.Tm,HoGdVO4激光连续波输出功率4.0 W,光光转换效率26%.声光调Q条件下输出平均高功率3.9 W,脉冲重复频率10 kHz,脉冲宽度50 ns. 通过减小声光Q开关的开启时间,激光脉冲宽度由50 ns减小至23 ns.在10 kHz重频下,测量最大脉冲能量0.39 mJ , 峰值功率7.8 kW.     

（Tm,Ho）：YLF晶体激光器的实验研究

报道了一台连续792nmTi:Al2O3激光器纵向抽运的（Tm,Ho):YLF微片激光器。在室温条件下，当抽运功率为680mW时，激光器在2．06μm波长的输出功率达到90mW。激光器阈值为380mW，光光转换效率为13％，斜率效率为26%.     

非谐振腔型KTP光参变振荡器

研究了双晶体走离补偿、非谐振腔型KTP光参变振荡器，利用一套膜片实现了KTP相位匹配所允许的全波段调谐，信号光调谐范围0.698μm-1.026μm，闲频光调谐范围1.105μm-2.237μm。5倍阈值处，信号光840nm最高输出能量53mJ，能量转换效率25.8%，量子转换效率40％，闲频光的量子郊率也达到32％。     

Performance of a liquid-nitrogen-cooled CW Tm, Ho:YLF laser

A liquid-nitrogen-cooled Tm, Ho:YLF laser is constructed with a 10-mm-long Tm(6%) and Ho(0.5%) co-doped yttrium lithium fluoride crystal pumped by a laser diode operating at 792 nm. The laser outputpower is improved by cooling the Tm, Ho:YLF crystal from 300 to 77 K. When the crystal is kept at 77K, the laser threshold pump power is 230 mW, the slope efficiency is 27.4%, and the maximum optical-to-optical efficiency is 19.9%. At the same time, the relation between the input power and the output powerat different temperatures is obtained.