复合外场中磁光材料(BiTm)_3(FeGa)_5O_(12)薄膜畴壁运动特性的研究

通过对 (BiTm) 3 (FeGa) 5O12 膜施工加低频交变磁场 ,匀速率增加的直流磁场和同时对该膜施加这两种磁场 (复合外场 ) ,用照相划线读数方法和通过电荷耦合器件 (CCD) 计算机作数字化处理获得磁畴壁 (DW)的相对百分数。结果表明 :( 1 )复合外场下DW运动规律中存在交互作用项 ;( 2 )低频交变磁场幅值 ( 1 4 0A/m)远低于等效阻力场 ( 1 0 3 A/m)时 ,DW可以运动 ,但不同步 ,频率大于 1Hz时明显滞后 ,( 3 )利用图像转换有利于提高实验结果的分辨率。     

正磷酸盐晶体Ba3(PO4)2和Sr3(PO4)2高温拉曼光谱研究

测量了碱土金属正磷酸盐Ba₃(PO₄)₂和Sr₃(PO₄)₂常温及高温拉曼光谱, 对拉曼振动模式进行指认, 并分析了晶体拉曼振动光谱及晶体结构在高温下的变化. 在温度升高的过程中, 拉曼振动频率向低频移动且振动峰宽度展宽, 晶体中的P-O平均键长随温度升高而变长, 但O-P-O的键角并未发生变化. 晶体在900 ℃以下无结构相变发生. 关键词： 3(PO₄)₂和Sr₃(PO₄)₂')" href="#">Ba₃(PO₄)₂和Sr₃(PO₄)₂ 高温拉曼光谱 振动模式 高温结构     

(BiFeO3)25/(La0.7Sr0.3MnO3)25 多层膜的光学和电学性质

采用射频磁控溅射方法在(001)SrTiO₃衬底上制备(001)取向的(BiFeO₃)₂₅/(La_0.7Sr_0.3MnO₃)₂₅多层膜.光学测试结果表明,1.3-2.1 eV范围内,相对于衬底而言多层膜光吸收增强; BiFeO₃的带隙为2.7 eV. 另外,结合绝缘介质导电模型分析了所测得的电流-电压数据,在所测试的温度及电压下,所制备的(BiFeO₃)₂₅/(La_0.7Sr_0.3MnO₃)₂₅多层膜的导电机理由空间电荷限制电导主导. 关键词： 多层膜 吸光度 空间电荷限制电导     

Li2K(IO3)3与Li2NH4(IO3)3的晶体结构

本文用X射线粉末法测定了Li₂K(IO₃)₃与Li₂NH₄(IO₃)₃的晶体结构和原子参数。发现Li₃K(IO₃)₃,Li₂NH₄(IO₃)₃与Li₂Rb(IO₃)₃同晶型,属单斜晶系,空间群为P2₁/α,每个单胞含有四个化合式量。室温的点阵常数分别为α=11.198?,b=11.046?,c=8.254?,β=111.53°,及α=11.327?,b=11.078?,c=8.341?,β=111.87°。讨论了二元化合物的形成与离子半径的关系。 关键词：     

熔体快淬Pr(Fe1-xCox)2合金的结构和磁性

通过熔体快淬方法获得Pr(Fe_1-xCo_x)₂合金条带,经过X射线衍射、差示扫描量热计和磁性测量对其结构、磁性和热稳定性进行了研究.发现当Co的含量x大于0.2时才可能获得Pr(Fe,Co)₂立方Laves相化合物.对Pr(Fe_0.6Co_0.4)₂合金,在快淬速度为30m/s时,条带由Pr₂(Fe,Co)₁₇,Pr(Fe,Co)₂和富稀土相组成;在速度为40m/s时,获得了几乎单相的Pr(Fe_0.6Co_0.4)₂化合物,其居里温度为305℃;在速度为45m/s时,除了Pr(Fe_0.6Co_0.4)₂化合物外,还存在少量的非晶相.Pr(Fe_0.6Co_0.4)₂化合物在770℃以上发生分解.用40m/s快淬纳米晶粉胶粘磁体有大的磁致伸缩系数（λ_∥-λ_⊥=140×10^-6)和高的硬磁性能（_iH_c=398kA/m). 关键词：     

Fe(NH2trz)3·(BF4)2掺杂聚芴的有机电致发光器件

对于RGB有机电致发光器件(OLEDs),蓝光非常重要.在现有各种蓝光材料中,聚芴(PFO)非常稳定且荧光量子效率可达80%,但它有一个非常大的缺点:电致发光会产生异常绿光带.这严重影响了PFO相关器件的饱和色纯度.本文使用分子基磁性材料Fe(NH₂trz)₃·(BF₄)₂掺杂PFO方法,解决了这一难题.以ITO为衬底,制作了结构为ITO/PEDOT:PSS/PFO:Fe(NH₂trz)₃·(BF₄)₂/CsCl/Al的器件.报道了利用Fe(NH₂trz)₃·(BF₄)₂特殊的电子自旋态调制PFO的光电特性,实现了PFO的强烈纯正蓝光发射.详细研究了Fe(NH₂trz)₃·(BF₄)₂对PFO光电特性的影响.在4 V至9 V电压的偏置下,没有Fe(NH₂trz)₃·(BF₄)₂的器件,发出特别异常的绿光.然而,与此形成明显对照的是:Fe(NH₂trz)₃·(BF₄)₂掺杂的器件发出强烈的本征蓝光;PFO绿色发光带被成功压制;随着电压的变化,器件光谱的蓝光部分在整个EL谱所占比例没有改变.运用光电磁一体化测量技术,进一步研究了PFO掺杂Fe(NH₂trz)₃·(BF₄)₂器件的磁发光(MEL)和磁电导(MC)效应.发现PFO:Fe(NH₂trz)₃·(BF₄)₂和纯PFO薄膜内都没有激基缔合物产生.运用发光动力学理论,分析了Fe(NH₂trz)₃·(BF₄)₂阻断PFO异常绿光发射的机理.     

R3(Fe1-xCox)29-yCry(R=Gd,Sm)化合物相稳定性研究

在制备出Gd₃(Fe_1-xCo_x)_29-yCr_{y化合物基础上，成功制备出Sm3(Fe1-xCox)29 -yCry化合物，通过x射线衍射和热磁分析对R3(Fe1-x< /sub>Co x)29-yCry 关键词： 3(Fe1-xCox)29-yCry化合物')" href="#">R3(Fe1-xCox)29-yCry化合物 相结构 单轴磁晶各向异性}     

水热法制备的Li4-3xEux(MoO4)2微晶及其发光性能

采用水热法制备了Li_4-3xEu_{x(MoO4)2系列红色荧光粉.通过X射线衍射(XRD)、扫描电镜(SEM )和荧光分析(FL)对产物的微结构、形貌和发光性能进行表征分析.XRD分析表明,制备的Li4-3xEux(MoO4)2微晶均为白钨矿四方结构.SEM结果显示:随着x的增大,Li4-3xEux(MoO4)2微晶的晶粒尺寸相应减小,在0.2~0.5 μm之间变化.荧光分析结果表明:源于Eu³⁺的⁵D0→⁷F2和⁵D0→⁷F1电荷转移的592 nm和614 nm的特征发射峰显现明显,后者的发射强度远远大于前者.随着x的增大,样品中Eu³⁺的两个特征发射峰的强度先增大后减小,在x=1.0时达到最大.}     

铁电单晶(KxNa1-x)0.4(SryBa1-y)0.8Nb2O6的光学性质和线性电光效应

本文介绍铁电单晶(K_xNa_1-x)_0.4(Sr_yBa_1-y)_0.8Nb₂O₆的光学性质和线性电光效应的测量。实验结果表明,这种晶体具有较大的光学双折射,透光范围由4000?到5.6μm。晶体具有低的线性电光调制的半波电压,其电光调制价值指数n₀³·γ_c高达730×10 关键词：     

用多步激发技术测定锶的(5p3/2ns)1及(5p3/2nd)3自电离谱

用分步激发方法及偏振光技术,测定了锶的(5p_3/2ns)₁(n=13-21)及(5p_3/2 nd)₃(n=13-24)各自电离谱,在低于5p_1/2电离限的(5p_3/2ns)₁态的实电子激发谱中,出现对应于(5p_1/2ns)₁及(5p_1/2nd)₁的畸变峰,畸变峰也出现于(5p_3/2nd)₃的实电子激发谱中。这说明(5p_jns)(5p_jnd)自电离系列间存在相互作用。 关键词：     

Field-induced insulator-metal-insulator transitions in low-energy H_2~+ ion-irradiated epitaxial La_(2/3)Ca_(1/3)MnO_3 thin films

Epitaxial La 2/3 Ca 1/3 MnO 3 thin films grown on LaAlO 3 (001) substrates were irradiated with low-energy 120-keV H 2 + ions over doses ranging from 10 12 ions/cm 2 to 10 17 ions/cm 2 . The irradiation suppresses the intrinsic insulator-metal (I-M) transition temperature and increases the resistance by reducing the crystallographic symmetry of the films. No irradiation-induced columnar defects were observed in any of the samples. The specific film irradiated at a critical dose around 8 × 10 15 ions/cm 2 is in a threshold state of the electric insulator where the I-M transition is absent. In an external field of 4 T or higher, the I-M transition is restored and thus an enormous magnetoresistance is observed, while a negative temperature coefficient resumes as the temperature is reduced further. Magnetic relaxation behavior is confirmed in this and other heavily irradiated samples. The results are interpreted in terms of the displacement of oxygen atoms provoked by ion irradiation and the resulting magnetic glassy state, which can be driven into a phase coexistence of metallic ferromagnetic droplets and the insulating glass matrix in a magnetic field.     

Optical pumping of the 2p3sP0 State of Ne (I = 3/2): g factor and metastability exchange cross section

A C.W. multi-mode dye laser is used to obtain by optical pumping an orientation of the 2p⁵ 3s³P₀ (F = 3/2) state of ²¹Ne. A magnetic resonance experiment leads to the measurement of the g factor g (³P₀) = 3.027 (8) × 10⁻⁴ to be compared with the theoretical prediction (3.025(6) × 10⁻⁴). One obtains also the metastability exchange cross section σ(³P₀) = 18.4 ± 4 Ų for collisions between metastable (³P₀) Ne atoms and ground state Ne atoms. This result is compared with other measurements and theoretical evaluation.     

Light-enhanced reactivation of passivated boron in hydrogen treated silicon

The thermal reactivation of the boron acceptor in hydrogenated silicon is strongly enhanced if the anneals are performed under illumination. The changes of the inactive boron concentration R versus annealing time t satisfy the equation dR/dt = -rR²/(N_A − R)², where N_A is the total boron concentration. Under strong illumination the annealing parameter r is proportional to the light intensity.     

Effective activation energy Ue(T,J,H) in textured Bi1.84Pb0.4Sr2Ca2Cu3Oy silver-clamped thick films

We have measured the resistivity of textured Bi_1.84Pb_0.4Sr₂Ca₂Cu₃O_y silver-clamped thick films as a function of temperature, current density ranging from 10 to 1×10³ A/cm² and magnetic field up to 0.3 T. We find that the effective activation energy U_e follows U_e(T,J,H)=U₀(1−T/T_p)^mln(J_c0/J)H⁻ with m=1.75 for Hab-plane and 2.5 for Hc-axis and =0.76 for Hab and 0.97 for Hc, for the current density regime above 100 A/cm², where T_p is a function of applied magnetic field and current density. This result suggests the effective activation energy U_e be correlated with the temperature, current density and magnetic field. The possible dissipative mechanisms responsible for the temperature, current density and magnetic field dependence of the effective activation energy are discussed.     

Perpendicularly oriented barium ferrite thin films with low microwave loss,prepared by pulsed laser deposition

Barium ferrite(Ba M) thin films are deposited on platinum coated silicon wafers by pulsed laser deposition(PLD).The effects of deposition substrate temperature on the microstructure,magnetic and microwave properties of Ba M thin films are investigated in detail.It is found that microstructure,magnetic and microwave properties of Ba M thin film are very sensitive to deposition substrate temperature,and excellent Ba M thin film is obtained when deposition temperature is 910℃ and oxygen pressure is 300 m Torr(1 Torr = 1.3332×10~2Pa).X-ray diffraction patterns and atomic force microscopy images show that the best thin film has perpendicular orientation and hexagonal morphology,and the crystallographic alignment degree can be calculated to be 0.94.Hysteresis loops reveal that the squareness ratio(M_r/M_s) is as high as 0.93,the saturated magnetization is 4004 Gs(1 Gs = 10~4T),and the anisotropy field is 16.5 kOe(1 Oe = 79.5775 A·m~(-1)).Ferromagnetic resonance measurements reveal that the gyromagnetic ratio is 2.8 GHz/kOe,and the ferromagnetic resonance linewith is108 Oe at 50 GHz,which means that this thin film has low microwave loss.These properties make the Ba M thin films have potential applications in microwave devices.     

The geometry of the SU(2) Kepler problem

The SU(2) Kepler problem is defined and analyzed, which is a Hamiltonian system reduced from the conformal Kepler problem on T^*( ⁸ − {0}) by the use of the symplectic SU(2) action lifted from the SU(2) left action on the SU(2) bundle ⁸ − {0} → ⁵ − {0}. This reduced system has a parameter μ ε su(2) coming from the value of the moment map associated with the symplectic SU(2) action. If μ ≠ 0, the phase space of this system have a bundle structure with base space T^*( ⁵ − {0}) and fibre S². The fibre, a (co)adjoint orbit through μ for SU(2), represents the internal degrees of freedom, called the isospin, of the particle of this system. The SU(2) Kepler problem with μ ≠ 0 is then interpreted as describing the motion of a classical particle with isospin in the Newtonian potential plus a specific repulsive potential together with a Yang-Mills field. This Yang-Mills field is to be referred to as BPST Yang's monopole field in ⁵ − {0};, since it becomes the Belavin-Polyakov-Schwartz-Tyupkin instanton, restricted on S⁴. If μ = 0, the SU(2) Kepler problem reduces to the ordinary Kepler problem. Like the ordinary Kepler problem, the Hamiltonian flows of the SU(2) Kepler problem of negative energy are all closed. It is shown in an explicit manner that the energy manifolds and isoenergetic orbit spaces for the SU(2) Kepler problem of negative energy are both homogeneous manifolds on which SU(4) acts transitively to the right; those homogeneous manifold are classified into two, according as the parameter μ is zero or not. For a certain value of μ, however, they contracts to the manifold which represents the set of all the equilibrium states. The isoenergetic orbit spaces are finally shown to be symplectomorphic to certain Kirillov-Konstant-Souriau coadjoint orbits for U(4), if μ is not the exceptional value mentioned above.     

Magnetic moments and Fe hyperfine field interactions in Y(Fe1−xRux)2 ternaries

Measurements of magnetization and ⁵⁷Fe Mössbauer spectra have been made for Y(Fe_1−xRu_x)₂. The C15 type cubic structure is stabilized for xx 0.7. The C15 compounds is ferromagnetic with T_c200 K and its saturation moment decreases monotonically with increasing x, while the ⁵⁷Fe hyperfine field decreases only slightly with x. From these results, it is deduced that the Ru atoms have an induced moment of ≈1μ_B in the range x 0.2. In the C14 type phase, no magnetic ordering develops even at 4.2 K.     

Electro-optical characteristics and field-emission properties of reactive DC-sputtered p-CuAlO2+x thin films

P-type transparent-conducting CuAlO_2+x thin films were deposited on silicon and glass substrates by reactive direct current sputtering of a prefabricated metal powder target having 1:1 atomic ratio of Cu and Al in oxygen-diluted argon atmosphere. XRD spectrum confirmed the proper phase formation of the material. UV-Vis-NIR spectrophotometric measurements showed high transparency of the films in the visible region with direct and indirect band gap values around 3.90 and 1.89 eV, respectively. The room temperature conductivity of the film was of the order of 0.22 S cm⁻¹ and the activation energy was 0.25 eV. Seebeck coefficient at room temperature showed a value of +115 μV/K confirming the p-type nature of the film. Room temperature Hall effect measurement also indicated positive value of Hall coefficient with a carrier concentration 4.4×10¹⁷ cm⁻³. We have also observed the low macroscopic field emission, from the wide band gap p-CuAlO_2+x thin film deposited on glass substrate. The emission properties have been studied for different anode-sample spacing. The threshold field was found to be as low as around 0.5–1.1 V/μm. This low threshold is attributed primarily to the internal nanostructure of the thin film, which causes considerable geometrical field enhancement inside the film as well as at the film/vacuum interface.     

Desorption of H2 from W(110) and Fe covered W(110) surfaces

The kinetics of H₂ desorption from H/W(110) and H/Fe₁/W(110) were studied by measuring work function changes Δø vs time at a number of temperatures. Combination with previously determined Δø vs coverage data and differentiation at various fixed coverages gave rate vs T data from which activation energies of desorption could be obtained. E vs coverage results agree well with previously determine ΔH_des results. In the case of H/Fe₁/W(110) this includes a rise from 20 to 30 kcal mol⁻¹ of H₂ at H/Fe = H/W > 0.3. Plots of rate −dθ/dt vs θ (θ being coverage in units of H/W) vary much more steeply than θ² at most coverages for both systems. The θ dependence can be explained almost quantitatively in terms of the variations of ΔH_des and surface entropy S_s with coverage, by assuming that rates of desorption are equal to the equilibrium rates of adsorption. The latter can be formulated thermodynamically, except for a sticking coefficient, s. Values for s(θ, T) can also be obtained and show relatively little temperature dependence.     

Dielectric and piezoelectric properties of(110) oriented Pb(Zr_(1-x)Ti_x)O_3 thin films

A phenomenological Landau–Devonshire theory is developed to investigate the ferroelectric, dielectric, and piezoelectric properties of(110) oriented Pb(Zr_(1-x)Ti_x)O_3(x = 0.4, 0.5, 0.6, and 0.7) thin films. At room temperature, the tetragonal a_1 phase, the orthorhombic a_2c phase, the triclinic γ_1 phase, and the triclinic γ_2 phase are stable. The appearance of the negative polarization component P_2 in the a_2c phase and the γ_1 phase is attributed to the nonlinear coupling terms in the thermodynamic potential. The γ phase of the Pb(Zr_(1-x)Ti_x)O_3 thin films has better dielectric and piezoelectric properties than the a_2c phase and the a_1 phase. The largest dielectric and piezoelectric coefficients are obtained in the Pb(Zr_(0.5)Ti_(0.5))O_3 thin film. The piezoelectric coefficient of 110–150 pm/V is obtained in the(110) oriented Pb(Zr_(0.5)Ti_(0.5))O_3 thin film, and the Pb(Zr_(0.3)Ti_(0.7))O_3 thin film has the remnant polarization and relative dielectric constant of 50 μC/cm~2 and 100, respectively,which are in agreement with the experimental measurements reported in the literature.