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Light-enhanced reactivation of passivated boron in hydrogen treated silicon |
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| Authors: | T Zundel J Weber L Tilly |
| Institution: | a Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, 7000, Stuttgart 80, Germany |
| Abstract: | The thermal reactivation of the boron acceptor in hydrogenated silicon is strongly enhanced if the anneals are performed under illumination. The changes of the inactive boron concentration R versus annealing time t satisfy the equation dR/dt = -rR2/(NA ? R)2, where NA is the total boron concentration. Under strong illumination the annealing parameter r is proportional to the light intensity. |
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