聚合物波导M-Z调制器TM模的泰勒级数展开法研究

根据聚合物脊型波导的结构特点,利用有效折射率法求出其横向折射率分布,将三维传播转化为二维传播,并从标量波动方程出发,在傍轴近似的情况下,采用Crank-Nicholson差分格式,得到了泰勒级数展开法基本计算格式,并对算法进行了适当优化;通过对Mach-Zehnder光波导TM模的模拟,分析了各种参数对损耗的影响。结果表明：泰勒级数展开法具有精度高、稳定性好、算法简单、易于编程等优点,是一种比较理想的光波导数值分析方法,可为聚合物电光调制器的设计制作提供理论参考。     

Perpendicularly oriented barium ferrite thin films with low microwave loss,prepared by pulsed laser deposition

Barium ferrite(Ba M) thin films are deposited on platinum coated silicon wafers by pulsed laser deposition(PLD).The effects of deposition substrate temperature on the microstructure,magnetic and microwave properties of Ba M thin films are investigated in detail.It is found that microstructure,magnetic and microwave properties of Ba M thin film are very sensitive to deposition substrate temperature,and excellent Ba M thin film is obtained when deposition temperature is 910℃ and oxygen pressure is 300 m Torr(1 Torr = 1.3332×10~2Pa).X-ray diffraction patterns and atomic force microscopy images show that the best thin film has perpendicular orientation and hexagonal morphology,and the crystallographic alignment degree can be calculated to be 0.94.Hysteresis loops reveal that the squareness ratio(M_r/M_s) is as high as 0.93,the saturated magnetization is 4004 Gs(1 Gs = 10~4T),and the anisotropy field is 16.5 kOe(1 Oe = 79.5775 A·m~(-1)).Ferromagnetic resonance measurements reveal that the gyromagnetic ratio is 2.8 GHz/kOe,and the ferromagnetic resonance linewith is108 Oe at 50 GHz,which means that this thin film has low microwave loss.These properties make the Ba M thin films have potential applications in microwave devices.     

含三氰基二氢呋喃结构单元的非线性光学聚合物的制备与性能研究

通过Friedel-Crafts烷基化反应合成了一种含三氰基二氢呋喃结构单元的新型非线性光学聚合物(P1),并采用旋涂法和电晕极化方式制备了极化聚合物膜.利用原子力显微镜和紫外可见分光光度计研究了极化前、后聚合物膜的表面形貌和吸光度的变化,并根据极化前后薄膜吸光度的变化计算了发色团分子的有序度,φ=0.20.采用二次谐...     

新型三腈基呋喃衍生物光谱特性的研究

通过两步反应合成了一种带有新型电子给体的D-π-A型三腈基呋喃衍生物(DCDHF-2-V),并采用旋涂法制备出与聚甲基丙烯酸甲酯(PMMA)共混均匀的聚合物薄膜.采用UV1700紫外可见分光光度计和F-4500荧光分光光度计研究了该化合物在不同极性溶剂以及薄膜状态下的吸收光谱和荧光光谱特性.结果表明,在薄膜状态下化合物的吸收峰有一定蓝移,吸收带变宽.随溶液极性的增加,荧光光谱的最人峰值波长逐渐红移,分子的荧光量子产率以及斯托克斯位移也有较大变化.据此计算出DCDHF-2-V分子激发态与基态偶极矩之差为35.68×10-30C·m,并根据双能级模型确定了分子的二阶非线性极化率β随波长的变化情况,当激光基频波长为1064 nm时,β为3323.4×10-40m4/V.