Anomalous Temperature Dependence of Photoluminescence in GaInNAs／GaAs Multiple Quantum Wells

Photoluminescence (PL) spectra of GaInNAs/GaAs multiple quantum wells grown on a GaAs substrate by molecular beam epitaxy are measured in a range of temperatures and excitation power densities.The energy position of the dominant PL peak shows an anomalous S-shape temperature dependence instead of the Varshni relation.By careful inspection,especially for the PL under lower excitation power density,two near bandedge peaks are well identified.These are assigned to carriers localized in nitrogen-induced bound states and interband excitonic recombinations,respectively.It is suggested that the temperature-induced switch of such two luminescence peaks in relative intensity causes a significant mechanism responsible for the S-shape shift observed in GaInNAs.A quantitative model based on the thermal depopulation of carriers is used to explain the temperature dependence of the PL peak related to N-induced bound states.     

Carrier Dynamics Determined by Carrier-Phonon Coupling in InGaN/GaN Multiple Quantum Well Blue Light Emitting Diodes

Phonon sidebands in the electrolumiescence(EL) spectra of InGaN/GaN multiple quantum well blue light emitting diodes are investigated. S-shaped injection current dependence of the energy spacing(ES) between the zero-phonon and first-order phonon-assisted luminescence lines is observed in a temperature range of 100–150 K.The S-shape is suppressed with increasing temperature from 100 to 150 K, and vanishes at temperature above200 K. The S-shaped injection dependence of ES at low temperatures could be explained by the three stages of carrier dynamics related to localization states:(i) carrier relaxation from shallow into deep localization states,(ii) band filling of shallow and deep localization states, and(iii) carrier overflow from deep to shallow localization states and to higher energy states. The three stages show strong temperature dependence. It is proposed that the fast change of the carrier lifetime with temperature is responsible for the suppression of S-shaped feature.The proposed mechanisms reveal carrier recombination dynamics in the EL of InGaN/GaN MQWs at various injection current densities and temperatures.     

Temperature Dependence of Emission Properties of Self-Assembled InGaN Quantum Dots

Emission properties of self-assembled green-emitting InGaN quantum dots （QDs） grown on sapphire substrates by using metal organic chemical vapor deposition are studied by temperature-dependent photoluminescence （PL） measurements. As temperature increases （15-300K）, the PL peak energy shows an anomalous V-shaped （redshift blueshift） variation instead of an S-shaped （redshift-blueshift-redshift） variation, as observed typically in green-emitting InGaN/GaN multi-quantum wells （MOWs）. The PL full width at half maximum （FWHM） also shows a V-shaped （decrease-increase） variation. The temperature dependence of the PL peak energy and FWHM of QDs are well explained by a model similar to MOWs, in which carriers transferring in localized states play an important role, while the confinement energy of localized states in the QDs is significantly larger than that in MOWs. By analyzing the integrated PL intensity, the larger confinement energy of localized states in the QDs is estimated to be 105.9meV, which is well explained by taking into account the band-gap shrinkage and carrier thermalization with temperature. It is also found that the nonradiative combination centers in QD samples are much less than those in QW samples with the same In content.     

Thermal conductivity of systems with a gap in the phonon spectrum

An original theoretical model for describing the low-temperature thermal conductivity in systems with a region of forbidden values(a gap) in the phonon spectrum is proposed. The model is based on new experimental results on the temperature dependence of the phonon diffusion coefficient in nanoceramics and dielectric glasses which showed a similar anomalous behavior of the diffusion coefficient in these systems that may be described under the assumption of a gap in the phonon spectrum. In this paper, the role of the gap in low-temperature behavior of the thermal conductivity, κ(T), is analyzed. The plateau in the temperature dependence of the thermal conductivity is shown to correlate with the position and the width of the gap. The temperature dependence of thermal conductivity of such systems when changing the scattering parameters related to various mechanisms is studied. It is found that the umklapp process(U-processes) involving low-frequency short-wavelength phonons below the gap forms the behavior of the temperature dependence of thermal conductivity in the plateau region. A comparison of the calculated and experimental results shows considerable possibilities of the model in describing the low-temperature thermal conductivity in glass-like systems.     

Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths

Four blue-violet light emitting InGaN/GaN multiple quantum well(MQW) structures with different well widths are grown by metal–organic chemical vapor deposition. The carrier localization effect in these samples is investigated mainly by temperature-dependent photoluminescence measurements. It is found that the localization effect is enhanced as the well width increases from 1.8 nm to 3.6 nm in our experiments. The temperature induced PL peak blueshift and linewidth variation increase with increasing well width, implying that a greater amplitude of potential fluctuation as well as more localization states exist in wider wells. In addition, it is noted that the broadening of the PL spectra always occurs mainly on the low-energy side of the PL spectra due to the temperature-induced band-gap shrinkage, while in the case of the widest well, a large extension of the spectral curve also occurs in the high energy sides due to the existence of more shallow localized centers.     

Photoluminescence of ZnSe—ZnS Single Quantum Wells Grown by Vapour Phase Epitaxy

We study the photoluminescence (PL) of ultra thin layer ZnSe quantum Wells in ZnS barriers.Samples with different well widths are grown by vapour phase epitaxy and the PL spectra of these samples are measured by the excitation of a 500W Hg lamp.The peak positions of the bands coming from the excitonic luminescence show a larger blueschift with respect to the energy of free excitons in the ZnSe bulk material.The observed variation of the full width at half maximum and peak position of the bands in the spectra with the well width are interpreted to the formation of the ZnSxSe1-x alloy layer due to the interdiffusion in the interfaces between ZnSe and ZnS.According to the behaviour of the excitons in the smaller conduction band offset,the exciton binding energy is estimated from the dependence of the PL intensity on the temperature.from this result,excitons seem to show nearly three-dimensional characteristics.     

PHOTOLUMINESCENCE PROPERTIES OF NANO-SIZE CRYSTALLINE SILICON FILMS

Photoluminescence (PL) at low temperature is reported for nc-Si:H films grown by PECVD. A characteristic luminescence peak was observed in the wavelength range of 1.1-1.2μm. The temperature dependence of PL has been studied in the temperature range of 4.2-180 K. The PL mechanism of nc-Si:H films is discussed. The emission peak at 1.1-1.2 μm is attributed to the interface atoms between grains, and the emission peak around 0.9μm is due to a little amount of amorphous component.     

THERMAL STABILITY AND GRAIN GROWTH OF NANOCRYSTALLINE METAL SILVER

The nanocrystalline metal silver (n-Ag) with average grain size of 10 nm was synthesized by using an inert gas evaporation and in situ compacting technique. The thermal stability of grain size and grain growth caused by isothermally annealing heat treatment, as well as the thermal behavior during grain growth, have been studied. The results indicated that the thermal stability temperature of grain size is about 200℃. The grain growth depends upon the annealing temperature and exhibits threedifferent stages, i.e., slow, fast, and rapid growth stages, corresponding to the temperature ranges from 200℃ to 300℃, from 300℃ to 400℃ and above 400℃, respectively. An exothermal peak and an endothermal peak occur on the differential scanning calorimetriy (DSC) curve of n-Ag. The exothermal peak and the endothermal peak appear in the temperature range from 200℃ to 400℃, and from 400℃ to 660℃, respectively. The enthalpies calculated from the above two peaks depend on the compacting pressure. Further analyses indicated that the grain growth of n-Ag is related to the release of the surface energy of grains and the interracial energy, as well as the strain energy stored in the bulk samples induced by compacting process.     

PHOTOLUMINESCENCE STUDY OF InAs/GaAs SELF-ORGANIZED QUANTUM DOTS WITH BIMODAL SIZE DISTRIBUTION

We have investigated the temperature dependence of the photoluminescence (PL) spectrum of self-organized InAs/GaAs quantum dots. A distinctive double-peak feature of the PL spectra from quantum dots has been observed, and a bimodal distribution of dot sizes has also been confirmed by scanning tunneling microscopy image for uncapped sample. The power-dependent PL study demonstrates that the distinctive PL emission peaks are associated with the ground-state emission of islands in different size branches. The temperature-dependent PL study shows that the PL quenching temperature for different dot families is different. Due to lacking of the couple between quantum dots, an unusual temperature dependence of the linewidth and peak energy of the dot ensemble photoluminescence has not been observed. In addition, we have tuned the emission wavelength of InAs QDs to 1.3 μm at room temperature.     

Photoluminescence of Mg—doped GaN with Different Mg Concentrations after Annealing at Different Temperatures

The blue band (BB) in low temperature photoluminescence of Mg-doped GaN films with different Mg concentrations is investigated.The BB peak of as-grown samples with higher Mg concentration centres at lower energy.A shift of the BB peak energy is observed after annealing in N2 at different temperatures,meanwhile,the difference between the BB peak energy is observed after annealing in N2 at different temperatures.Meanwhile,the difference between the BB peak energies diminishes for raised annealing temperature,and the BB peaks for different samples converge to 2.92eV after annealing at 850℃.These experimental results can be accounted for by a model based on compensation effect.The shift of BB lines provides a useful criterion for the optimum annealing temperature of the Mg-doped GaN material,and the value is taken to be 850℃ in our case.     

Thermal resistance matrix representation of thermal effects and thermal design in multi-finger power heterojunction bipolar transistors

The thermal resistance matrix including self-heating thermal resistance and thermal coupling resistance is presented to describe the thermal effects of multi-finger power heterojunction bipolar transistors. The dependence of thermal resistance matrix on finger spacing is also investigated. It is shown that both self-heating thermal resistance and thermal coupling resistance are lowered by increasing the finger spacing, in which the downward dissipated heat path is widened and the heat flow from adjacent fingers is effectively suppressed. The decrease of self-heating thermal resistance and thermal coupling resistance is helpful for improving the thermal stability of power devices. Furthermore, with the aid of the thermal resistance matrix, a 10-finger power heterojunction bipolar transistor (HBT) with non-uniform finger spacing is designed for high thermal stability. The optimized structure can effectively lower the peak temperature while maintaining a uniformity of the temperature profile at various biases and thus the device effectively may operate at a higher power level.     

Fast adaptive flat-histogram ensemble to enhance the sampling in large systems

An efficient novel algorithm was developed to estimate the Density of States(DOS) for large systems by calculating the ensemble means of an extensive physical variable, such as the potential energy, U, in generalized canonical ensembles to interpolate the interior reverse temperature curve β_s(U)=SU/U, where S(U) is the logarithm of the DOS. This curve is computed with different accuracies in different energy regions to capture the dependence of the reverse temperature on U without setting prior grid in the U space. By combining with a U-compression transformation, we decrease the computational complexity from O(N3/2) in the normal Wang Landau type method to O(N1/2) in the current algorithm, as the degrees of freedom of system N. The efficiency of the algorithm is demonstrated by applying to Lennard Jones fluids with various N, along with its ability to find different macroscopic states, including metastable states.     

Electronic and Shallow Impurity States in Semiconductor Heterostructures Under an Applied Electric Field

With the use of variational method to solve the effective mass equation, we have studied the electronic and shallow impurity states in semiconductor heterostructures under an applied electric field. The electron energy levels are calculated exactly and the impurity binding energies are calculated with the variational approach. It is found that the behaviors of electronic and shallow impurity states in heterostructures under an applied electric field are analogous to that of quantum wells. Our results show that with the increasing strength of electric field, the electron confinement energies increase, and the impurity binding energy increases also when the impurity is on the surface, while the impurity binding energy increases at first, to a peak value, then decreases to a value which is related to the impurity position when the impurity is away from the surface. In the absence of electric field, the result tends to the Levine‘s ground state energy (-1/4 effective Rydberg) when the impurity is on the surface, and the ground impurity binding energy tends to that in the bulk when the impurity is far away from the surface. The dependence of the impurity binding energy on the impurity position for different electric field is also discussed.     

Effects of annealing temperature on shape transformation and optical properties of germanium quantum dots

The influences of thermal annealing on the structural and optical features of radio frequency(rf) magnetron sputtered self-assembled Ge quantum dots(QDs) on Si(100) are investigated.Preferentially oriented structures of Ge along the(220) and(111) directions together with peak shift and reduced strain(4.9%to 2.7%) due to post-annealing at 650 ℃ are discerned from x-ray differaction(XRD) measurement.Atomic force microscopy(AFM) images for both pre-annealed and post-annealed(650 ℃) samples reveal pyramidal-shaped QDs(density ~ 0.26×10~(11) cm~(-2)) and dome-shape morphologies with relatively high density ~ 0.92×10~(11) cm~(-2),respectively.This shape transformation is attributed to the mechanism of inter-diffusion of Si in Ge interfacial intermixing and strain non-uniformity.The annealing temperature assisted QDs structural evolution is explained using the theory of nucleation and growth kinetics where free energy minimization plays a pivotal role.The observed red-shift ~ 0.05 eV in addition to the narrowing of the photoluminescence peaks results from thermal annealing,and is related to the effect of quantum confinement.Furthermore,the appearance of a blue-violet emission peak is ascribed to the recombination of the localized electrons in the Ge-QDs/SiO_2 or GeO_x and holes in the ground state of Ge dots.Raman spectra of both samples exhibit an intense Ge-Ge optical phonon mode which shifts towards higher frequency compared with those of the bulk counterpart.An experimental Raman profile is fitted to the models of phonon confinement and size distribution combined with phonon confinement to estimate the mean dot sizes.A correlation between thermal annealing and modifications of the structural and optical behavior of Ge QDs is established.Tunable growth of Ge QDs with superior properties suitable for optoelectronic applications is demonstrated.     

Anomalous temperature dependence of photoluminescence spectra from InAs/GaAs quantum dots grown by formation–dissolution–regrowth method

Two kinds of InAs/GaAs quantum dot(QD) structures are grown by molecular beam epitaxy in formation–dissolution–regrowth method with different in-situ annealing and regrowth processes. The densities and sizes of quantum dots are different for the two samples. The variation tendencies of PL peak energy, integrated intensity, and full width at half maximum versus temperature for the two samples are analyzed, respectively. We find the anomalous temperature dependence of the InAs/GaAs quantum dots and compare it with other previous reports. We propose a new energy band model to explain the phenomenon. We obtain the activation energy of the carrier through the linear fitting of the Arrhenius curve in a high temperature range. It is found that the Ga As barrier layer is the major quenching channel if there is no defect in the material. Otherwise, the defects become the major quenching channel when some defects exist around the QDs.     

Molecular dynamics simulation of thermal conductivity of silicone rubber

Silicone rubber is widely used as a kind of thermal interface material(TIM)in electronic devices.However few studies have been carried out on the thermal conductivity mechanism of silicone rubber.This paper investigates the thermal conductivity mechanism by non-equilibrium molecular dynamics(NEMD)in three aspects:chain length,morphology,and temperature.It is found that the effect of chain length on thermal conductivity varies with morphologies.In crystalline state where the chains are aligned,the thermal conductivity increases apparently with the length of the silicone-oxygen chain,the thermal conductivity of 79 nm-long crystalline silicone rubber could reach 1.49 W/(m·K).The thermal conductivity of amorphous silicone rubber is less affected by the chain length.The temperature dependence of thermal conductivity of silicone rubbers with different morphologies is trivial.The phonon density of states(DOS)is calculated and analyzed.The results indicate that crystalline silicone rubber with aligned orientation has more low frequency phonons,longer phonon MFP,and shorter conducting path,which contribute to a larger thermal conductivity.     

Calculation of dissociation temperature of quarkonium using Gaussian Expansion Method

The dissociation temperatures of quarkonium states in a thermal medium are obtained in the framework of the quark model with the help of the Gaussian Expansion Method(GEM).This is the first time this method has been applied to the dissociation problem of mesons.The temperature-dependent potential is obtained by fitting the lattice results.Solving the Schr¨odinger equation with the GEM,the binding energies and corresponding wave functions of the ground states and the excited states are obtained at the same time.The accuracy and efficiency of the GEM provide a great advantage for the dissociation problem of mesons.The results show that the ground states1~1S_(0 )and 1~3S_(1 )have much higher dissociation temperatures than other states,and the spin-dependent interaction has a significant effect on the dissociation temperatures of 1~3S_(1 )and 1~1S_0.We also suggest using the radius of the bound state as a criterion of quarkonium dissociation.This can help to avoid the inaccuracy caused by the long tail of quarkonium binding energy dependence on temperature.     

Abnormal Energy Dependence of Photoluminescence Decay Time in InGaN Epilayer

We employ photoluminescence (PL) and time-resolved PL to study exciton localization effect in InGaN epilayers.By measuring the exciton decay time as a function of the monitored emission energy at different temperatures,we have found unusual behaviour of the energy dependence in the PL decay process. At low temperature, the measured PL decay time increases with the emission energy. It decreases with the emission energy at 200K, and remains nearly constant at the intermediate temperature of 12OK. We have studied the dot size effect on the radiative recombination time by calculating the temperature dependence of the exciton recombination lifetime in quantum dots, and have found that the observed behaviour can be well correlated to the exciton localization in quantum dots. This suggestion is further supported by steady state PL results.     

Paths for the Non-radiative Recombination Occurring in CdS：CdO/Si Multi-Interface Nanoheterostructure Array

A CdS：CdO/Si multi-interface nanoheterostructure array （CdS：CdO/Si-NPA） is prepared by a chemical bath deposition method, and three emission bands are observed in the as-grown CdS：CdO film. By measuring its temperature-dependent photoluminescence （PL） spectrum, the variation trends of the peak energies and intensities with temperature for the three bands are obtained. Based on the theoretical analyses and fitting results, the non-radiative recombination processes corresponding to the PL quenching for the three emission bands are attributed to the thermally activated transition between heavy-hole and light-hole levels （at low temperature） and the thermal escape due to the scattering from longitudinal optical phonons （at high temperature）, the transition from acceptor levels to surface states, and the transition related to surface defect states, respectively. The clarification of the non-radiative recombination processes in CdS：CdO/Si-NPA might provide useful information for promoting the performance of optoelectronic devices based on CdS/Si nanoheterostructures.     

Temperature－Dependent Photoluminescence of ZnTe Films Grown on Si Substrates

ZnTe films have been prepared on Si substrates by metal-organic chemical vapour deposition (MOCVD), and the temperature-dependent photoluminescence (PL) properties were investigated. The near-band-edge (NBE) emission of the ZnTe sample at 83K shows an asymmetry line shape, which can be decomposed into two Gaus-siam lines labelled by FE and BE. Temperature-dependent PL intensity of the NBE peak shows two variation regions, and an expression with two dissociation channels fits well to the experimental data. The results of the temperature-dependent full width at half maximum (FWHM) and peak energy were well understood under the framework of the two-dissociation-channel model. That is, at low temperature, the emission from bound excitons governs the NBE peak, while above 157K, the free exciton emission becomes dominant gradually. A simple model with three energy levels was employed to describe the variation in emission intensity of BE and FE with temperature.