Temperature Dependence of Emission Properties of Self-Assembled InGaN Quantum Dots

Emission properties of self-assembled green-emitting InGaN quantum dots （QDs） grown on sapphire substrates by using metal organic chemical vapor deposition are studied by temperature-dependent photoluminescence （PL） measurements. As temperature increases （15-300K）, the PL peak energy shows an anomalous V-shaped （redshift blueshift） variation instead of an S-shaped （redshift-blueshift-redshift） variation, as observed typically in green-emitting InGaN/GaN multi-quantum wells （MOWs）. The PL full width at half maximum （FWHM） also shows a V-shaped （decrease-increase） variation. The temperature dependence of the PL peak energy and FWHM of QDs are well explained by a model similar to MOWs, in which carriers transferring in localized states play an important role, while the confinement energy of localized states in the QDs is significantly larger than that in MOWs. By analyzing the integrated PL intensity, the larger confinement energy of localized states in the QDs is estimated to be 105.9meV, which is well explained by taking into account the band-gap shrinkage and carrier thermalization with temperature. It is also found that the nonradiative combination centers in QD samples are much less than those in QW samples with the same In content.     

连续流离子聚合

微流场技术因其良好的传质传热性能应用于各种机理的聚合反应中,引起了学术界和工业界的广泛关注。本文聚焦于高度放热的离子聚合,总结了近年来不同单体连续流阴/阳离子聚合的研究进展。微反应器在改善离子聚合苛刻的反应条件、精确地控制聚合产物分子量及其分布、调控共聚物结构等方面显示出釜式反应器无法比拟的优势。此外,本文对连续流离子聚合的工业化应用前景进行了探讨和展望。