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1.
We propose a metal organic vapor phase epitaxy(MOVPE) method of pre-introducing TMIn during the growth of uGa N to improve the subsequent growth of In Ga N and discuss the impact of this method in detail. Monitoring the MOVPE by the interference curve generated by the laser incident on the film surface, we found that this method avoided the problem of the excessive In Ga N growth rate. Further x-ray diffraction(XRD), photoluminescence(PL), and atomic force microscope(AFM) tests showed that the quality of In Ga N is improved. It is inferred that by introducing TMIn in advance, the indium atom can replace the gallium atom in the reactor walls, delivery pipes, and other corners. Hence the auto-incorporation of gallium can be reduced when In Ga N is grown, so as to improve the material quality.  相似文献   
2.
吴亮亮  赵德刚  李亮  乐伶聪  陈平  刘宗顺  江德生 《物理学报》2013,62(8):86102-086102
研究了金属有机化学气相沉积设备生长条件对AlN 薄膜质量的影响. 应用Williamson-Hall方法测试并分析了不同氮化时间、AlN缓冲层生长时间、 载气流量生长参数对AlN薄膜的面内晶粒尺寸的影响. 实验结果表明, 随着氮化时间减小, 缓冲层生长时间增加, 载气流量减少, AlN薄膜的侧向生长和岛的合并能力增强, 面内晶粒尺寸增大, 从而晶体质量也变好. 关键词: AlN Williamson-Hall 面内晶粒尺寸  相似文献   
3.
This paper investigates the major structural parameters, such as crystal quality and strain state of (001)-oriented GaN thin films grown on sapphire substrates by metalorganic chemical vapour deposition, using an in-plane grazing incidence x-ray diffraction technique. The results are analysed and compared with a complementary out-of-plane x- ray diffraction technique. The twist of the GaN mosaic structure is determined through the direct grazing incidence t of (100) reflection which agrees well with the result obtained by extrapolation method. The method for directly determining the in-plane lattice parameters of the GaN layers is also presented. Combined with the biaxial strain model, it derives the lattice parameters corresponding to fully relaxed GaN films. The GaN epilayers show an increasing residual compressive stress with increasing layer thickness when the two dimensional growth stage is established, reaching to a maximum level of-0.89 GPa.  相似文献   
4.
In situ optical reflectivity measurements are employed to monitor the GaN epilayer growth process above a low-temperature GaN buffer layer on a c-plane sapphire substrate by metalorganic chemical vapour deposition. It is found that the lateral growth of the GaN islands and their coalescence are promoted in the initial growth stage if optimized nitridation time and temperature are selected when the substrate is pre-exposed to ammonia. As confirmed by atomic force microscopy observations, the quality of the GaN epilayers is closely dependent on the surface morphology of the nitridated buffer layer, especially grain size and nucleation density.  相似文献   
5.
Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well(MQW) solar cells are investigated. It is found that due to the reduction of piezoelectric polarization and the enhancement of tunneling transport of photo-generated carriers in MQWs, the external quantum efficiency(EQE) of the solar cells increases in a low energy spectral range(λ 370 nm) when the barrier thickness value decreases from 15 nm to 7.5 nm. But the EQE decreases abruptly when the barrier thickness value decreases down to 3.75 nm. The reasons for these experimental results are analyzed. We are aware that the reduction of depletion width in MQW region, caused by the high resistivity of the p-type GaN layer may be the main reason for the abnormally low EQE value at long wavelengths(λ 370 nm).  相似文献   
6.
We present the growth of GaN epilayer on Si(111) substrate with a single AlGaN interlayer sandwiched between the GaN epilayer and AlN buffer layer by using the metalorganic chemical vapour deposition.The influence of the AlN buffer layer thickness on structural properties of the GaN epilayer has been investigated by scanning electron microscopy,atomic force microscopy,optical microscopy and high-resolution x-ray diffraction.It is found that an AlN buffer layer with the appropriate thickness plays an important role in increasing compressive strain and improving crystal quality during the growth of AlGaN interlayer,which can introduce a more compressive strain into the subsequent grown GaN layer,and reduce the crack density and threading dislocation density in GaN film.  相似文献   
7.
报道了用MOCVD方法在GaAs衬底上制作p-GaN/InGaN/n-GaN结构紫外探测器.我们对器件进行了测试分析.根据器件光伏信号强度和相位的测量结果,我们得到了该器件的能带结构图.我们还发现Ni/Au电极与p-GaN之间的接触表现出肖特基接触的特性.该探测器在入射光波长为375nm处的响应度大约为7.4×10-3A/W.  相似文献   
8.
邢海英  范广涵  赵德刚  何苗  章勇  周天明 《物理学报》2008,57(10):6513-6519
采用基于密度泛函理论的第一性原理平面波赝势法计算不同Mn浓度掺杂GaN晶体的电子结构和光学性质.计算结果表明Mn掺杂GaN使得Mn 3d与N 2p轨道杂化,产生自旋极化杂质带,材料表现为半金属性,非常适于自旋注入,说明该种材料是实现自旋电子器件的理想材料,折射率在带隙处出现峰值,紫外区光吸收系数随Mn浓度的增加而增大. 关键词: Mn掺杂GaN 第一性原理 电子结构 光学性质  相似文献   
9.
周梅  赵德刚 《物理学报》2008,57(7):4570-4574
研究了p-GaN层厚度对GaN基pin结构紫外探测器性能的影响.模拟计算表明:较厚的p-GaN层会减小器件的量子效率,然而同时也会减小器件的暗电流,较薄的p-GaN层会增加器件的量子效率,但是同时也增加了器件的暗电流.进一步的分析表明,金属和p-GaN之间的结电场是出现这种现象的根本原因.在实际的器件设计中,应该根据实际需要选择p型层的厚度. 关键词: GaN 紫外探测器 量子效率 暗电流  相似文献   
10.
声波在一维声子晶体中共振隧穿的研究   总被引:22,自引:0,他引:22       下载免费PDF全文
通过从实验和理论方面对声波在一维声子晶体单晶体和被小的共振腔分开的双晶体中传播时发生的隧穿和共振隧穿现象的研究,观察到了声子晶体单晶体在带隙频率范围内发生的隧穿现象,而对于双晶体样品,在带隙频率范围内出现了很强的共振透射峰.共振发生时,实验测得的群时间很大,但是没有共振时,群速度却很快. 关键词: 声波 声子晶体 隧穿 共振  相似文献   
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